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KR-102962632-B1 - Nuclear PR, NEMP and non-nuclear NNEMP multi-protection devices with error filtering circuitry

KR102962632B1KR 102962632 B1KR102962632 B1KR 102962632B1KR-102962632-B1

Abstract

The present invention relates to a multi-protection device for nuclear PR, NEMP, and non-nuclear NNEMP, comprising a sensor circuit unit that outputs a sensing signal including at least one of a PR sensor and an EMP sensor, and an error filtering unit that generates a final EMP detection signal based on the sensing signal, wherein the error filtering unit filters out cases of detection errors based on a plurality of EMP sensing signals included in the sensing signal to determine whether to activate the final EMP detection signal.

Inventors

  • 이민웅
  • 이남호
  • 황영관
  • 권희정
  • 송근영
  • 박원균

Assignees

  • 한국원자력연구원

Dates

Publication Date
20260508
Application Date
20221005

Claims (8)

  1. A sensor circuit unit including a PR sensor and an EMP sensing unit, and outputting a sensing signal of at least one of the PR sensor and the EMP sensing unit; and It includes an error filtering unit that generates a final EMP detection signal based on the sensing signal of the EMP sensing unit; The above EMP sensing unit is, An external EMP sensor unit provided externally to detect EMP; and Includes an internal EMP sensor unit equipped internally for detecting EMP; The above external EMP sensor unit detects electromagnetic waves generated from the outside, and The internal EMP sensor unit above detects an internal instantaneous current induced by the EMP, and The above error filtering unit is, Based on a plurality of EMP sensing signals output from the external EMP sensor unit and the internal EMP sensor unit, filtering out cases of detection errors to determine whether to activate the final EMP detection signal. PR, NEMP, and non-nuclear NNEMP multi-protection device featuring
  2. In paragraph 1, The above error filtering unit is, If any of the multiple EMP sensing signals is an undetected EMP, the final EMP detection signal is disabled, and When all multiple EMP sensing signals are EMP detections, activating the final EMP detection signal PR, NEMP, and non-nuclear NNEMP multi-protection device featuring
  3. In paragraph 1, The above error filtering unit is, Includes an AND logic circuit connected to multiple EMP sensing signals. PR, NEMP, and non-nuclear NNEMP multi-protection device featuring
  4. In paragraph 3, The above error filtering unit is, A circuit composed solely of multiple p-MOSFETs and passive components PR, NEMP, and non-nuclear NNEMP multi-protection device featuring
  5. In paragraph 4, The above passive component is a resistor. PR, NEMP, and non-nuclear NNEMP multi-protection device featuring
  6. In paragraph 3, The above AND logic circuit is, A NAND logic circuit that receives multiple EMP sensing signals; and Including an inverting logic circuit that receives the output of the above NAND logic circuit, inverts it, and provides a final EMP detection signal. PR, NEMP, and non-nuclear NNEMP multi-protection device featuring
  7. In paragraph 6, The above NAND logic circuit is, 1st and 2nd p-MOSFETs; and It includes first and second n-MOSFETs connected to at least one of the first and second p-MOSFETs; and The above-mentioned inverting logic circuit is, 3rd p-MOSFET; and A third n-MOSFET connected to the drain terminal of the third p-MOSFET; comprising, The source terminals of the first to third p-MOSFETs are connected to a predetermined voltage, and The gate terminal of the first p-MOSFET is connected to any one of the plurality of EMP sensing signals and the gate terminal of the first n-MOSFET, and The gate terminal of the second p-MOSFET is connected to another EMP sensing signal among the plurality of EMP sensing signals and the gate terminal of the second n-MOSFET, and the drain terminal of the second p-MOSFET is connected to the drain terminal of the first n-MOSFET, and The source terminal of the first n-MOSFET is connected to the drain terminal of the second n-MOSFET, and The gate terminal of the third p-MOSFET is connected to the gate terminal of the third n-MOSFET, wherein the gate terminal of the first p-MOSFET is connected to the connection node between the second p-MOSFET and the first n-MOSFET and the connection node between the third p-MOSFET and the third n-MOSFET. PR, NEMP, and non-nuclear NNEMP multi-protection device featuring
  8. In paragraph 5, The above AND logic circuit is, 1st to nth p-MOSFETs; (n is a natural number greater than or equal to 3) 1 to m passive elements (m is a natural number greater than or equal to 2) each connected to the 2 to n p-MOSFETs above, wherein The source terminals of the first to third p-MOSFETs are connected to a predetermined voltage, and The gate terminal of the first p-MOSFET is connected to any one of the plurality of EMP sensing signals, and The gate terminal of the second p-MOSFET is connected to another EMP sensing signal among the plurality of EMP sensing signals, and The drain terminals of the first and second p-MOSFETs are connected to the gate terminals of the third p-MOSFET. PR, NEMP, and non-nuclear NNEMP multi-protection device featuring

Description

Nuclear PR, NEMP and non-nuclear NNEMP multi-protection devices with error filtering circuitry The present invention relates to a multi-protection device, and more specifically, to a nuclear PR, NEMP, and non-nuclear NNEMP multi-protection device equipped with an error filtering circuit. When prompt gamma rays, a pulsed form of high-energy radiation (PR) during a nuclear explosion, are incident on electronic equipment, the high energy causes electrons within atoms to split, generating a large number of electron-hole pairs. Additionally, the applied bias causes unwanted current flow in electronic components. This leads to errors caused by an "upset" phenomenon where data values within the component change, or causes a "latch-up" phenomenon where parasitic thyristors within the electronic component operate, resulting in device failure. Furthermore, the movement of electrons generated by the nuclear explosion causes the occurrence of a Nuclear Electromagnetic Pulse (NEMP). The aforementioned NEMP refers to an electromagnetic burst caused by a nuclear explosion; the rapidly changing electric and magnetic fields resulting from this can be associated with electrical and electronic systems, causing harmful currents and voltage spikes. Consequently, the NEMP causes widespread lock-up phenomena in electronic equipment, resulting in the paralysis of military power. In addition to the aforementioned NEMP, there also exist NNEMPs (Non-NEMPs) that are artificially created using Intentional EMI generators, E-bombs, High Power Microwave (HPM), and Ultra Wide Band (UWB) generators, which cause damage to electronic equipment and communication networks in specific areas within a few kilometers. As described above, the high-energy PR, nuclear NEMP, and NNEMP generated during a nuclear explosion cause malfunctions and functional paralysis in components and electronic systems, posing a serious risk to key national facilities and military weapon systems. Currently developed and applied technologies for protecting electronic equipment from nuclear explosion damage have a problem in that they are applied independently to pulsed radiation and NEMP damage that occur simultaneously in the initial stages. This is because if only one side is protected, the equipment intended for protection will be damaged by the energy from the other side. To overcome the above problem, for example, Patent Publication No. 10-2017-0103555 discloses a technology that combines a TVS (Transient Voltage Suppression) for NEMP protection and a NED (Nuclear Event Detector) for PR blocking into a single module. This allows active power control techniques to be simultaneously applied to NEMP protection using the signal from the NED sensor. However, there is a problem in that the detection area of the aforementioned NED sensor is relatively narrow compared to NEMP, so the active protection area of NEMP covers only a portion of the total NEMP damage area. Additionally, there is a problem in that the NED and the power control circuit must be configured separately. Furthermore, non-nuclear NEMP caused by EMP bombs mounted on missiles or aircraft-dropped bombs can widely neutralize enemy communication networks or command and control systems with power approximately 100 times stronger than lightning, and portable EMP bombs attack enemy rear areas, densely populated civilian areas, or areas operating advanced equipment to halt equipment operations, thus requiring protective measures. In other words, existing EMP protection technology (Shield Filter) has limitations in applicability to various fixed and mobile advanced electronic weapon systems. In particular, transient surge currents induced inside electronic equipment by external high-output electromagnetic energy are incompletely blocked by existing EMP protection technology, so it is necessary to block the influence of Fault Signals generated when the power is turned ON and OFF. FIG. 1 is a block diagram illustrating the configuration of a nuclear PR, NEMP, and non-nuclear NNEMP multi-protection device according to an embodiment of the present invention, and FIG. 2 is a drawing specifically illustrating FIG. 1, and FIG. 3 is a drawing illustrating an external EMP sensor unit according to an embodiment of the present invention, and FIG. 4 is a drawing illustrating an internal EMP sensor unit according to an embodiment of the present invention, and FIG. 5 is a circuit diagram illustrating an error filtering unit according to an embodiment of the present invention, and FIG. 6 is a circuit diagram illustrating an error filtering unit according to another embodiment of the present invention, and FIG. 7 is a circuit diagram illustrating a multi-signal processing unit according to an embodiment of the present invention, and FIG. 8 is a circuit diagram illustrating a radiation-resistant multi-signal processing unit according to another embodiment of the present invention, and FIG. 9 is a graph showing the simulation results