KR-102962647-B1 - Domain switching device and method of manufacturing the same

Abstract

A domain switching element comprises: a channel region; a source and a drain connected to the channel region; a gate electrode spaced apart from the channel region; an anti-ferroelectric layer disposed between the channel region and the gate electrode; a conductive layer disposed in contact with the conductive layer between the gate electrode and the anti-ferroelectric layer; and a barrier layer disposed between the anti-ferroelectric layer and the channel region.

Inventors

• 허진성
• 김상욱
• 이윤성
• 조상현

Assignees

• 삼성전자주식회사

Dates

Publication Date

20260507

Application Date

20190924

Claims (20)

1. Channel area; Source and drain connected to the above channel area; A gate electrode positioned spaced apart from the above channel region; An anti-ferroelectric layer disposed between the channel region and the gate electrode; A conductive layer disposed in contact with the antiferroelectric layer between the gate electrode and the antiferroelectric layer; and A barrier layer disposed between the above-mentioned antiferroelectric layer and the above-mentioned channel region; comprising, The conductive layer comprises metal nitride, metal oxynitride, RuO, MoO, or WO, and The coefficient of thermal expansion of the above conductive layer is smaller than the coefficient of thermal expansion of the above ferroelectric layer and larger than the coefficient of thermal expansion of Mo, Domain switching element.
2. In paragraph 1, The above-mentioned antiferroelectric layer is a domain switching element in which at least a portion of the region adjacent to the above-mentioned conductive layer is crystallized.
3. In paragraph 1, A domain switching device in which the above-mentioned antiferroelectric layer has a ratio of ZrO of 50% or more in the interface region with the above-mentioned conductive layer.
4. In paragraph 1, A domain switching element in which the conductive layer is made of a material having a sheet resistance of less than 1 MΩ/square.
5. delete
6. delete
7. delete
8. In paragraph 1, A domain switching device having a breakdown voltage greater than the breakdown voltage of the above barrier layer.
9. In paragraph 1, A domain switching device comprising a barrier layer that includes at least one of SiO, AlO, HfO, ZrO, LaO, YO, and MgO, or a material in which a dopant is doped into any one of SiO, AlO, HfO, ZrO, LaO, YO, and MgO, or a two-dimensional insulator (2D insulator).
10. In paragraph 1, A domain switching element further comprising a dielectric layer disposed between the barrier layer and the channel element.
11. In Paragraph 10, A domain switching device in which the dielectric layer is made of a material different from the barrier layer.
12. In Paragraph 10, A domain switching device having a dielectric constant of the barrier layer greater than the dielectric constant of the dielectric layer.
13. In Paragraph 10, A domain switching device in which the dielectric layer comprises SiO, AlO, HfO, ZrO, or a two-dimensional insulator (2D insulator).
14. In paragraph 1, The above-mentioned antiferroelectric layer comprises at least one of HfO, ZrO, SiO, AlO, CeO, YO, and LaO, forming a domain switching device.
15. In Paragraph 14, The above-mentioned antiferroelectric layer further comprises a dopant, and The above dopant is a domain switching element comprising at least one of Si, Al, Zr, Y, La, Gd, Sr, Hf, and Ce.
16. In paragraph 1, The above channel region is a domain switching device comprising at least one of Si, Ge, SiGe, group III-V semiconductor, oxide semiconductor, nitride semiconductor, nitride oxide semiconductor, two-dimensional material (2D material), quantum dot, transition metal dichalcogenide, and organic semiconductor.
17. A step of providing a substrate including a channel region; A step of forming a stacked structure including a barrier layer, a domain switching layer, and a conductive layer on the channel region; A step of forming an electrode material layer on the above-described stacked structure; and The method includes the step of inducing anti-ferroelectricity in the domain switching layer; The conductive layer comprises metal nitride, metal oxynitride, RuO, MoO, or WO, and The coefficient of thermal expansion of the above conductive layer is smaller than the coefficient of thermal expansion of the domain switching layer and larger than the coefficient of thermal expansion of Mo, and A method for manufacturing a domain switching device in which the antiferroelectricity of the domain switching layer is expressed by the conductive layer that provides tensile stress to the domain switching layer.
18. In Paragraph 17, A method for manufacturing a domain switching device, wherein the domain switching layer comprises at least one of HfO, ZrO, SiO, AlO, CeO, YO, and LaO.
19. delete
20. In Paragraph 17, The above-mentioned inducing step A method for manufacturing a domain switching device, comprising the step of crystallizing at least a portion of the domain switching layer adjacent to the conductive layer.

Description

Domain switching device and method of manufacturing the same The disclosed embodiments relate to a domain switching element and a method for manufacturing the same. Conventional silicon-based transistors have limitations in improving operating characteristics and scaling down. With the development of nanofabrication technology, it is becoming possible to manufacture transistor devices with increasingly smaller sizes, but the minimum voltage required to operate the transistor is limited by the electron Boltzmann distribution. For example, when measuring the operating voltage and current characteristics of a conventional silicon-based transistor, the subthreshold swing (SS) value is given by the following formula, and it is known that the limit for the SS value is about 60 mV/dec. (1) Here, k B is the Boltzmann constant, T is the absolute temperature, q is the elementary charge, C D is the capacitance of the depletion layer, and C ins is the capacitance of the gate insulator. As the size of the transistor decreases, power density increases due to the difficulty of lowering the operating voltage to about 0.8 V or less. Therefore, increasing the distribution density of the device can lead to failures caused by heat generation, which limits the scale-down of the device. There is a need to develop devices that can improve operating characteristics such as subthreshold swing (SS), are advantageous for scale-down, and increase control efficiency. FIG. 1 is a cross-sectional view showing the schematic structure of a domain switching element according to an embodiment. FIG. 2 is a cross-sectional view showing the schematic structure of a domain switching element according to a comparative example. Figures 3a and 3b are graphs conceptually showing the relationship between charge and energy and the relationship between electric field and polarization of a ferroelectric material employed in a domain switching device according to a comparative example, respectively. FIGS. 4a and 4b are graphs conceptually showing the relationship between charge and energy and the relationship between electric field and polarization of an antiferroelectric material employed in a domain switching device according to an embodiment. Figures 5 and 6 are graphs that experimentally confirmed that HfZrO can exhibit ferroelectricity and antiferroelectricity, respectively, due to the interfacial strain relationship with adjacent material layers. FIG. 7 is a cross-sectional view showing the schematic structure of a domain switching element according to another embodiment. FIGS. 8a to 8g are drawings illustrating a method for manufacturing a domain switching device according to an embodiment. FIG. 9 is a conceptual diagram schematically showing the architecture of an electronic device according to an embodiment. FIG. 10 is a conceptual diagram schematically showing the architecture of an electronic device according to another embodiment. Hereinafter, embodiments will be described in detail with reference to the attached drawings. The described embodiments are merely illustrative, and various modifications are possible from these embodiments. In the following drawings, the same reference numerals refer to the same components, and the size of each component in the drawings may be exaggerated for clarity and convenience of explanation. In the following, terms described as "upper" or "upper" may include not only those directly above in contact, but also those above without contact. Terms such as first, second, etc., may be used to describe various components, but are used solely for the purpose of distinguishing one component from another. These terms do not limit the difference in the material or structure of the components. A singular expression includes a plural expression unless the context clearly indicates otherwise. Furthermore, when a part is said to "include" a certain component, this means that, unless specifically stated otherwise, it does not exclude other components but may include additional components. Additionally, terms such as “...part,” “module,” etc., as described in the specification refer to a unit that processes at least one function or operation, and this may be implemented in hardware or software, or as a combination of hardware and software. The use of the term “above” and similar descriptive terms may apply to both the singular and plural forms. Unless there is an explicit statement that the steps constituting the method must be performed in the described order, they may be performed in a suitable order. Furthermore, the use of all exemplary terms (e.g., etc.) is merely intended to describe the technical concept in detail and, unless limited by the claims, such terms do not limit the scope of the rights. FIG. 1 is a cross-sectional view showing the schematic structure of a domain switching element according to an embodiment. Referring to FIG. 1, the domain switching element (100) includes a channel region (CH), a source (SR) a