KR-102962651-B1 - LED Device And Method For Manufacturing The LED Device, And Display Apparatus Including The LED Device

Abstract

An LED element and a method for manufacturing the same, and a display device including the LED element are disclosed. The disclosed LED element comprises: a first semiconductor layer including a first surface and a second surface disposed facing the first surface and having an area larger than that of the first surface; a light-emitting layer including an active layer disposed on the first surface and a second semiconductor layer disposed on the active layer; an insulating layer disposed on the first surface and forming an open region of the first semiconductor layer; a first electrode in contact with the first semiconductor layer through the open region; and a second electrode formed on the second semiconductor layer and in contact with the second semiconductor layer, wherein the angle formed by the surface of the insulating layer in contact with the active layer and the second semiconductor layer and the surface of the insulating layer in contact with the first semiconductor layer may be less than 90°.

Inventors

• 황경욱
• 장호원
• 황준식

Assignees

• 삼성전자주식회사
• 서울대학교산학협력단

Dates

Publication Date

20260508

Application Date

20210225

Priority Date

20201127

Claims (20)

1. A light-emitting layer comprising a first semiconductor layer including a first surface and a second surface disposed facing the first surface and having an area larger than that of the first surface, an active layer disposed on the first surface, and a second semiconductor layer disposed on the active layer, An insulating layer disposed on the first surface and defining an open region of the first semiconductor layer, A first electrode in contact with the first semiconductor layer through the open region, and A second electrode provided on the second semiconductor layer and in contact with the second semiconductor layer. Includes, The first semiconductor layer comprises an electrode forming surface having a first width and a light-emitting surface having a second width greater than the first width, and The insulating layer is formed to cover a portion of the electrode forming surface of the first semiconductor layer, and The angle formed by the surface of the insulating layer in contact with the active layer and the second semiconductor layer and the surface of the insulating layer in contact with the electrode forming surface of the first semiconductor layer is less than 90°. LED element.
2. In paragraph 1, The first electrode above is in contact with the surface of the first semiconductor layer, LED element.
3. In paragraph 1, The first and second electrodes above are reflective electrodes, LED element.
4. In paragraph 1, The above LED element has a size of 100 µm x 100 µm or less, LED element.
5. In paragraph 1, A horizontal electrode structure having at least a portion of the first electrode and the second electrode provided in a direction facing the first surface, LED element.
6. In paragraph 1, The driving part connection surfaces of the first electrode and the second electrode are formed at the same distance from the second surface, LED element.
7. In paragraph 1, The first electrode includes an extension portion extending above the insulating layer, LED element.
8. In paragraph 1, The first semiconductor layer comprises a defect line formed on the second surface, LED element.
9. In paragraph 8, The above defect line is parallel to one side of the first semiconductor layer, LED element.
10. In paragraph 1, The first semiconductor layer comprises a notch formed on the first surface and concavely recessed in the direction of the second surface. LED element.
11. In Paragraph 10, The above notch is formed in a direction parallel to one side of the LED element, LED element.
12. In paragraph 1, The first semiconductor layer is formed along the periphery of the first electrode on the first surface and includes a valley portion that is concavely recessed in the direction of the second surface. LED element.
13. A light-emitting layer comprising a first semiconductor layer including a first surface and a second surface disposed facing the first surface and having an area larger than that of the first surface, an active layer disposed on the first surface, and a second semiconductor layer disposed on the active layer, An insulating layer disposed on the first surface and defining an open region of the first semiconductor layer, A first electrode in contact with the first semiconductor layer through the open region, and A second electrode provided on the second semiconductor layer and in contact with the second semiconductor layer. Includes, The first semiconductor layer comprises an electrode forming surface having a first width and a light-emitting surface having a second width greater than the first width, and The insulating layer is formed to cover a portion of the electrode forming surface of the first semiconductor layer, and The angle formed by the surface of the active layer in contact with the insulating layer and the surface of the active layer in contact with the first semiconductor layer is greater than 90°. LED element.
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20. It includes a pixel array in which unit pixels, including a first pixel emitting a first color light and a second pixel emitting a second color light, are arranged in a two-dimensional array, and The first pixel and the second pixel each include different LED elements, At least one of the above LED elements is, A light-emitting layer comprising a first semiconductor layer including a first surface and a second surface disposed facing the first surface and having an area larger than that of the first surface, an active layer disposed on the first surface, and a second semiconductor layer disposed on the active layer, An insulating layer disposed on the first surface and defining an open region of the first semiconductor layer, A first electrode in contact with the first semiconductor layer through the open region, and A second electrode provided on the second semiconductor layer and in contact with the second semiconductor layer. Includes, The first semiconductor layer comprises an electrode forming surface having a first width and a light-emitting surface having a second width greater than the first width, and The insulating layer is formed to cover a portion of the electrode forming surface of the first semiconductor layer. The angle formed by the surface of the insulating layer in contact with the active layer and the second semiconductor layer and the surface of the insulating layer in contact with the electrode forming surface of the first semiconductor layer is less than 90°. Display device.

Description

LED Device and Method for Manufacturing The LED Device, and Display Apparatus Including The LED Device The invention relates to an LED element and a method for manufacturing the same, and a display device including the LED element. Liquid crystal displays (LCDs) and organic light-emitting diode (OLED) displays are widely used as display devices. Recently, technology for manufacturing high-resolution display devices using micro-sized LED elements (Micro Light Emitting Diode Devices) has been gaining attention. Prior art includes Korean registered patent No. 1640830 and Japanese published patent No. 1998-093198. FIG. 1a is a cross-sectional view of an LED element according to one embodiment, FIG. 1b is an example of a plan view of the LED element of FIG. 1a viewed from the electrode forming surface side, FIG. 1c is another example of a plan view of the LED element of FIG. 1a viewed from the electrode forming surface side, and FIG. 1d is a plan view of the light-emitting surface of a first semiconductor layer included in the LED element of FIG. 1a. FIG. 2a is a cross-sectional view of an LED element according to another embodiment, and FIG. 2b is a perspective view of a first semiconductor layer included in the LED element of FIG. 2a viewed from the direction of the electrode forming plane. FIG. 3a is a cross-sectional view of an LED element according to another embodiment, and FIG. 3b is a plan view of the LED element of FIG. 3a viewed from the electrode forming surface side. FIG. 4 is a plan view schematically illustrating a display device according to one embodiment. FIGS. 5a to 5l are drawings for explaining a method of manufacturing an LED element according to one embodiment. Hereinafter, exemplary embodiments will be described in detail with reference to the attached drawings. In the drawings below, the same reference numerals denote the same components, and the size of each component in the drawings may be exaggerated for clarity and convenience of explanation. Meanwhile, the embodiments described below are merely illustrative, and various modifications are possible from these embodiments. In the following, terms designated as "upper" or "upper" may include not only those directly above in contact but also those above non-contact. Singular expressions include plural expressions unless the context clearly indicates otherwise. Furthermore, when a part is described as "comprising" a certain component, this means that, unless specifically stated otherwise, it does not exclude other components but may include additional components. The use of the term “above” and similar descriptive terms may be in both singular and plural. Unless there is an explicit description of the order of the steps constituting the method or a description contrary to it, the steps may be performed in a suitable order. The steps are not necessarily limited to the described order. Additionally, terms such as “...part,” “module,” etc., as described in the specification refer to a unit that processes at least one function or operation, and this may be implemented in hardware or software, or as a combination of hardware and software. The connections of lines or connecting members between the components shown in the drawings are exemplary representations of functional connections and/or physical or circuit connections, and may be replaced or additionally represented as various functional connections, physical connections, or circuit connections in the actual device. The use of all examples or exemplary terms is merely for the purpose of describing the technical concept in detail, and unless limited by the claims, the scope is not limited by the said examples or exemplary terms. FIG. 1a is a cross-sectional view of an LED element according to an embodiment, FIG. 1b is an example of a plan view of the LED element of FIG. 1a viewed from the electrode forming surface side, FIG. 1c is another example of a plan view of the LED element of FIG. 1a viewed from the electrode forming surface side, and FIG. 1d is a plan view of the light-emitting surface of the first semiconductor layer of FIG. 1a. Referring to FIG. 1a, the LED element (1000) has a horizontal electrode structure. Specifically, the LED element (1000) includes a light-emitting layer (LEL) and first and second electrodes (150, 160) provided on one side of the light-emitting layer (LEL). Here, the light-emitting layer (LEL) may be an inorganic-based LED layer (Light Emitting Diode layer). The light-emitting layer (LEL) may include a first semiconductor layer (110), an active layer (120), and a second semiconductor layer (130). The first semiconductor layer (110) may have a three-dimensional shape with a relatively thicker thickness compared to the active layer (120) and the second semiconductor layer (130). Specifically, the first semiconductor layer (110) may include an electrode forming surface (110a) having a first width (We) and a light-emitting surface (110b) having a second width (Wl