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KR-102962654-B1 - Two dimensional structure and semiconductor device including the two dimensional structure, and method of manufacturing the semiconductor device

KR102962654B1KR 102962654 B1KR102962654 B1KR 102962654B1KR-102962654-B1

Abstract

A two-dimensional material structure, a semiconductor device including the same, and a method for manufacturing the semiconductor device are disclosed. The disclosed two-dimensional material structure comprises: a first insulator comprising a first dielectric material; a second insulator provided on the first insulator and comprising a second dielectric material; a first two-dimensional material film provided on an exposed surface of the first insulator; and a second two-dimensional material film provided on an exposed surface of the second insulator. The first and second two-dimensional material films comprise a two-dimensional material having a two-dimensional layered structure, and the second two-dimensional material film comprises a greater number of layers of the two-dimensional material than the first two-dimensional material film.

Inventors

  • 설민수
  • 신건욱
  • 권준영
  • 유민석
  • 이창석

Assignees

  • 삼성전자주식회사

Dates

Publication Date
20260507
Application Date
20211008

Claims (20)

  1. A first insulator comprising a first dielectric material; A second insulator provided on the first insulator and comprising a second dielectric material; A first two-dimensional material film provided on the exposed surface of the first insulator; and A second two-dimensional material film provided on the exposed surface of the second insulator; comprising The first and second two-dimensional material films described above comprise a two-dimensional material having a two-dimensional layered structure, and The second two-dimensional material film comprises a greater number of layers of two-dimensional material than the first two-dimensional material film, and The first genetic material is a two-dimensional material structure having a lower degree of defects than the second genetic material.
  2. In Article 1, The above-mentioned first and second two-dimensional material films are arranged to be connected to each other, forming a two-dimensional material structure.
  3. In Article 1, The first insulator comprises a dielectric substrate comprising the first dielectric material, and the second insulator comprises a dielectric layer provided on the first insulator, forming a two-dimensional material structure.
  4. In Article 1, The above-mentioned first and second genetic materials are two-dimensional material structures comprising different materials or materials formed in different ways.
  5. In Article 4, The first dielectric material is a two -dimensional material structure comprising SiO2 formed by dry thermal oxidation or Si3N4 formed by low-pressure chemical vapor deposition.
  6. In Article 4, The second dielectric material is a two-dimensional material structure comprising Al₂O₃ , HfO₂ , ZrO₂ , or SiO₂ formed by atomic layer deposition (ALD).
  7. In Article 4, The second dielectric material is a two -dimensional material structure comprising SiO2 or Si3N4 formed by plasma chemical vapor deposition (PECVD).
  8. In Article 1, The above two-dimensional material is a two-dimensional material structure including TMD (transition metal dichalogenide), graphene, or black phosphorous.
  9. In Article 1, The first and second two-dimensional material films above are two-dimensional material structures having 10 or fewer layers.
  10. A dielectric substrate comprising a first genetic material; First and second dielectric layers provided spaced apart from each other on the above dielectric substrate and comprising a second dielectric material; A first two-dimensional material film provided on the surface of the dielectric substrate between the first and second dielectric layers; A second two-dimensional material film provided on the surfaces of the first and second dielectric layers, respectively; First and second electrodes provided in the first and second dielectric layers; and A third electrode provided between the first and second electrodes; comprising The first and second two-dimensional material films described above comprise a two-dimensional material having a two-dimensional layered structure, and The second two-dimensional material film comprises a greater number of two-dimensional materials than the first two-dimensional material film, and The first dielectric material is a semiconductor device having a lower defect degree than the second dielectric material.
  11. In Article 10, A semiconductor device in which the first and second two-dimensional material films are arranged to be connected to each other.
  12. In Article 10, The above-mentioned first two-dimensional material film is a semiconductor device that forms a channel region.
  13. In Article 11, A semiconductor device in which the first and second dielectric materials include different materials or materials formed by different methods.
  14. In Article 11, The above two-dimensional material is a semiconductor device comprising TMD, graphene, or black phosphorus.
  15. A dielectric substrate comprising a first genetic material; A dielectric layer provided on the above dielectric substrate and comprising a second dielectric material; A two-dimensional material film comprising a two-dimensional material having a two-dimensional layered structure and provided in the above dielectric layer; First and second electrodes spaced apart from each other on the above two-dimensional material film; and A third electrode provided between the first and second electrodes; comprising The above first dielectric material is a semiconductor device having a lower defect degree than the above second dielectric material.
  16. In Article 15, The above two-dimensional material film is a semiconductor device comprising a single layer of two-dimensional material.
  17. In Article 15, A semiconductor device in which the first and second dielectric materials include different materials or materials formed in different ways.
  18. In Article 15, The above two-dimensional material is a semiconductor device comprising TMD, graphene, or black phosphorus.
  19. A step of providing a dielectric substrate containing a first genetic material; A step of forming first and second dielectric layers containing a second dielectric material on the dielectric substrate so as to be spaced apart from each other; A step of growing a first two-dimensional material film on the surface of the dielectric substrate and growing a second two-dimensional material film on the surfaces of the first and second dielectric layers, respectively; A step of forming first and second electrodes on the first and second dielectric layers; and The method includes the step of forming a third electrode between the first and second electrodes; The first and second two-dimensional material films described above comprise a two-dimensional material having a two-dimensional layered structure, and The second two-dimensional material film comprises a greater number of layers of two-dimensional material than the first two-dimensional material film, and A method for manufacturing a semiconductor device in which the first dielectric material has a lower defect degree than the second dielectric material.
  20. In Article 19, A method for manufacturing a semiconductor device in which the first and second two-dimensional material films are formed to be connected to each other.

Description

Two-dimensional material structure and semiconductor device including the two-dimensional structure, and method of manufacturing the semiconductor device The present disclosure relates to a two-dimensional material structure, a semiconductor device including the same, and a method for manufacturing a semiconductor device. As miniaturization progresses to improve the integration density of semiconductor devices, research utilizing two-dimensional materials has recently been underway. Two-dimensional materials are attracting attention as next-generation materials capable of overcoming the performance degradation issues associated with semiconductor device miniaturization, as they possess stable and excellent properties even at nanoscale thicknesses. FIG. 1 illustrates a two-dimensional material structure according to an exemplary embodiment. FIG. 2 illustrates a two-dimensional material structure according to another exemplary embodiment. FIG. 3a is a TEM image of a first two-dimensional material film (monolayer MoS₂ film) formed on the exposed surface of a dielectric substrate ( SiO₂ substrate) in the two-dimensional material structure shown in FIG. 2. FIG. 3b is a TEM image of a second two-dimensional material film (multilayer MoS₂ film) formed on the surface of a dielectric layer ( Al₂O₃ layer) in the two-dimensional material structure shown in FIG. 2 . FIG. 4 illustrates a semiconductor device according to an exemplary embodiment. Figure 5 shows the results of measuring contact resistance according to the number of layers of a two-dimensional material ( MoS₂ ). FIGS. 6a to 6e are drawings for explaining a method of manufacturing a semiconductor device illustrated in FIG. 4. FIG. 7 illustrates a semiconductor device according to another exemplary embodiment. FIGS. 8a to 8d are drawings for explaining a method of manufacturing a semiconductor device illustrated in FIG. 7. Hereinafter, exemplary embodiments will be described in detail with reference to the attached drawings. In the drawings below, the same reference numerals denote the same components, and the size of each component in the drawings may be exaggerated for clarity and convenience of explanation. Meanwhile, the embodiments described below are merely illustrative, and various modifications are possible from these embodiments. In the following, terms designated as "upper" or "upper" may include not only those located directly above, below, to the left, or to the right in contact, but also those located above, below, to the left, or to the right without contact. Singular expressions include plural expressions unless the context clearly indicates otherwise. Furthermore, when a part is described as "comprising" a certain component, this means that, unless specifically stated otherwise, it does not exclude other components but may include additional components. The use of the term “for the above” and similar descriptive terms may be in both singular and plural. Unless there is an explicit description of the order of the steps constituting the method, these steps may be performed in a suitable order and are not necessarily limited to the described order. Additionally, terms such as “...part,” “module,” etc., as described in the specification refer to a unit that processes at least one function or operation, and this may be implemented in hardware or software, or as a combination of hardware and software. The connections of lines or connecting members between the components shown in the drawings are exemplary representations of functional connections and/or physical or circuit connections, and may be replaced or additionally represented as various functional connections, physical connections, or circuit connections in the actual device. All examples or the use of exemplary terms are merely for the purpose of describing the technical concept in detail, and unless limited by the claims, the scope is not limited by such examples or exemplary terms. FIG. 1 illustrates a two-dimensional material structure (100) according to an exemplary embodiment. Referring to FIG. 1, a substrate (110) is provided that includes a first insulator (111) and a second insulator (112). The first insulator (111) is provided in Region A of the substrate (110), and the second insulator (112) is provided in Region B of the substrate (110). The first insulator (111) may include a first dielectric material, and the second insulator (112) may include a second dielectric material. Here, the first and second dielectric materials may have different defectabilities. For example, the first dielectric material may have a lower defectability than the second dielectric material. The first and second dielectric materials may include different dielectric materials and/or dielectric materials formed by different methods. The first dielectric material may have a lower defect degree compared to the second dielectric material by being formed by a high-temperature process. The first dielectric mater