KR-102962686-B1 - METHOD OF FORMING STRUCTURES FOR THRESHOLD VOLTAGE CONTROL

Abstract

A method and system for depositing a rare earth metal carbon-containing layer on a substrate surface, and a structure and device formed using the method are disclosed. An exemplary method includes the step of using a periodic deposition process, such as an atomic layer deposition process, for depositing a rare earth metal carbide-containing layer on a substrate surface.

Inventors

• 판 드뤼넌 마르트
• 데젤라 찰스
• 씨에 치
• 데민스키 페트로
• 베르니 쥬세뻬 알레씨오
• 창 렌-지에
• 첸 리푸

Assignees

• 에이에스엠 아이피 홀딩 비.브이.

Dates

Publication Date

20260511

Application Date

20211210

Priority Date

20201214

Claims (20)

1. A method for depositing a rare earth metal carbide-containing layer on a substrate, wherein the method comprises: - A step of providing a substrate including a surface layer into a reaction chamber; - A step of depositing a rare earth metal carbide-containing layer on the surface layer by a periodic deposition process, wherein the periodic deposition process comprises one or more cycles, and the cycle is, - A step of providing a rare earth metal precursor to the reaction chamber as a precursor pulse; and - A step of depositing the rare earth metal carbide-containing layer, comprising the step of providing a carbon reactant to the reaction chamber as a reactant pulse; A rare earth metal carbide-containing layer is formed on the above substrate, and A method in which the rare earth metal carbide-containing layer comprises cerium carbide, and the rare earth metal precursor comprises a cerium precursor.
2. A method for forming an electrode on a substrate, wherein the method comprises: - A step of providing a substrate including a gate dielectric into a reaction chamber; - A step of depositing a first conductive layer on the gate dielectric; - A step of depositing a rare earth metal carbide-containing layer on the first conductive layer by a periodic deposition process, wherein the periodic deposition process comprises one or more cycles, and the cycle is, - A step of providing a rare earth metal precursor to the reaction chamber as a precursor pulse; and - A step of depositing the rare earth metal carbide-containing layer, comprising the step of providing a carbon reactant to the reaction chamber as a reactant pulse; and - A step of depositing a second conductive layer on the above rare earth metal carbide layer; including, An electrode comprising the first conductive layer, the rare earth metal carbide-containing layer, and the second conductive layer is formed on the substrate, A method in which the rare earth metal carbide-containing layer comprises cerium carbide, and the rare earth metal precursor comprises a cerium precursor.
3. In paragraph 1 or 2, The above rare earth metal carbide-containing layer comprises a rare earth metal carbide selected from lanthanum carbide, yttrium carbide, erbium carbide, samarium carbide, europium carbide, ytterbium carbide, and cerium carbide, and the rare earth metal precursor is selected from lanthanum precursor, yttrium precursor, erbium precursor, samarium precursor, europium precursor, ytterbium precursor, and cerium precursor, method
4. In paragraph 1 or 2, A method in which the above rare earth metal precursor comprises at least one of a rare earth metal with an oxidation state of +3 and a rare earth metal with an oxidation state of +4.
5. delete
6. In paragraph 1 or 2, A method in which the above rare earth metal precursor comprises a substituted or unsubstituted cyclopentadienyl ligand.
7. In claim 6, the method comprises the rare earth metal precursor Ce(iPrCp) 3 .
8. In paragraph 1 or 2, A method in which the carbon reactant comprises a halogenated C1 to C6 alkane or alkene.
9. In paragraph 1 or 2, The above carbon reactant comprises iodine, in a method.
10. In paragraph 2, A method in which the first conductive layer comprises a first transition metal nitride.
11. In paragraph 2, A method in which the second conductive layer comprises a second transition metal nitride.
12. In paragraph 2, A method in which the first conductive layer comprises a first transition metal carbide.
13. In paragraph 2, A method in which the second conductive layer comprises a second transition metal carbide.
14. In paragraph 1 or 2, A method in which the precursor pulse precedes the reactant pulse.
15. In Paragraph 14, The above periodic deposition process further comprises a first hydrogen pulse, and the first hydrogen pulse comprises the step of providing a first hydrogen-containing gas to the reaction chamber.
16. In paragraph 15, A method in which the first hydrogen pulse occurs after the precursor pulse and before the reactant pulse.
17. In Paragraph 16, The above periodic deposition process further comprises a second hydrogen pulse, wherein the second hydrogen pulse comprises the step of providing a second hydrogen-containing gas to the reaction chamber, and wherein the second hydrogen pulse occurs after the reactant pulse.
18. In paragraph 1 or 2, The above periodic deposition process includes an additional precursor pulse, and the additional precursor pulse includes the step of providing an additional precursor to the reaction chamber, wherein the additional precursor and the rare earth metal precursor are different, method.
19. In Paragraph 18, The above additional precursor comprises at least one of a rare earth metal and a transition metal, in a method.
20. As a system, One or more reaction chambers; A precursor gas source including a precursor; A reactant gas source containing reactants; Exhaust source; and Includes a controller, A system configured such that the controller is configured to control the gas flow to at least one of the one or more reaction chambers to perform the method according to claim 1 or 2.

Description

Method of forming structures for threshold voltage control The present disclosure generally relates to a method and system suitable for forming a layer on a substrate surface, and to a structure comprising said layer. More specifically, the present disclosure relates to a method and system for forming a layer that controls the threshold voltage of a metal-oxide-semiconductor field-effect transistor (MOSFET), and to a structure formed using said method and system. For example, the scaling of semiconductor devices, such as complementary metal-oxide-semiconductor (CMOS) devices, has led to significant improvements in the speed and density of integrated circuits. However, conventional device scaling technologies face major challenges at the future technological crossroads. For instance, one challenge is finding a suitable dielectric stack that forms an insulating barrier between the channel and the gate of a field-effect transistor. In this regard, a particular problem is controlling the threshold voltage of the field-effect transistor. Any discussion, including problems and solutions stated in this section, is incorporated into this disclosure solely for the purpose of providing context for the present disclosure. Any or all information in such discussion should not be construed as having been known at the time the present invention was made or otherwise constitutes the prior art. The content of the present invention may introduce a selection of concepts in a simplified form, which may be explained in more detail below. The content of the present invention is not intended to necessarily distinguish the main or essential features of the claimed essence, nor is it intended to be used to limit the scope of the claimed essence. Various embodiments of the present disclosure relate to a method for forming a structure including a rare earth metal carbide-containing layer, a structure and device formed using such method, and an apparatus for performing said method and/or forming said structure and/or device. The rare earth metal carbide-containing layer may be used in various applications, including reducing power consumption in integrated circuits. The method may include a periodic deposition process. The periodic deposition process may include one or more of an atomic layer deposition process or a periodic chemical vapor deposition process. The periodic deposition process may include a thermal process—that is, a process that does not use plasma-activated species. In some cases, reactants may be exposed to plasma to form activated reactant species, e.g., radicals and/or ions. A method for depositing a rare earth metal carbide-containing layer on a substrate is described herein. The method comprises the step of providing the substrate into a reaction chamber. The substrate comprises a surface layer. The method further comprises the step of depositing a rare earth metal carbide-containing layer on the surface layer by a periodic deposition process. The periodic deposition process comprises one or more cycles. A cycle comprises a precursor pulse and a reactant pulse. The precursor pulse comprises the step of providing a rare earth metal precursor to the reaction chamber. The reactant pulse comprises the step of providing a carbon reactant to the reaction chamber. Thus, a rare earth metal carbide-containing layer is formed on the substrate. A method for forming an electrode on a substrate is further described herein. The method comprises the step of providing the substrate into a reaction chamber. The substrate comprises a gate dielectric. The method further comprises the step of depositing a first conductive layer on the gate dielectric by a periodic deposition process, and subsequently depositing a rare earth metal carbide-containing layer on the first conductive layer. The periodic deposition process comprises one or more cycles. A cycle comprises a precursor pulse and a reactant pulse. The precursor pulse comprises the step of providing a rare earth metal precursor to the reaction chamber. The reactant pulse comprises the step of providing a carbon reactant to the reaction chamber. Then, the method comprises the step of depositing a second conductive layer on the rare earth metal carbide. Thus, an electrode is formed on the substrate. The electrode comprises a first conductive layer, a rare earth metal carbide-containing layer, and a second conductive layer. In some embodiments, the rare earth metal carbide-containing layer comprises a rare earth metal carbide selected from lanthanum carbide, yttrium carbide, erbium carbide, samarium carbide, europium carbide, ytterbium carbide, and cerium carbide, and the rare earth metal precursor is selected from lanthanum precursor, yttrium precursor, erbium precursor, samarium precursor, europium precursor, ytterbium precursor, and cerium precursor. In some embodiments, the rare earth metal precursor comprises at least one of a rare earth metal with an oxidation state of +3 and