KR-102962705-B1 - Organic photodetector and electronic device including the same

KR102962705B1KR 102962705 B1KR102962705 B1KR 102962705B1KR-102962705-B1

Abstract

An organic photodetector and an electronic device including the same are disclosed, comprising: an anode; a cathode opposite to the anode; and an active layer disposed between the anode and the cathode and including a first layer and a second layer, wherein the first layer is disposed between the anode and the second layer and the first layer includes a p-type organic semiconductor and an n-type organic semiconductor, and the second layer includes a p-type organic semiconductor.

Inventors

이대호
서동규
신준용
유병욱
윤석규
이병석

Assignees

삼성디스플레이 주식회사

Dates

Publication Date: 20260508
Application Date: 20210601

Claims (20)

Anode; A cathode facing the above anode; An active layer disposed between the anode and the cathode and comprising a first layer and a second layer; and An electron transport region disposed between the active layer and the cathode; Includes, The first layer is disposed between the anode and the second layer, and The first layer above includes a p-type organic semiconductor and an n-type organic semiconductor, and The above second layer includes a p-type organic semiconductor, and The above electron transport region includes a buffer layer, and the buffer layer is in direct contact with the active layer, and An organic photodetector, wherein the p-type organic semiconductor included in the second layer has a LUMO energy level between the LUMO energy level of the n-type organic semiconductor and the LUMO energy level of the material included in the buffer layer.
In paragraph 1, The above n-type organic semiconductor is an organic photodetector having a lower LUMO energy level than the above p-type organic semiconductor.
In paragraph 1, The LUMO energy level of the above p-type organic semiconductor is -4.0 eV to -2.9 eV, and An organic photodetector in which the LUMO energy level of the n-type organic semiconductor is -4.5 eV to -3.5 eV.
In paragraph 1, The above p-type organic semiconductor is an organic photodetector, wherein the p-type organic semiconductor is boron subphthalocyanine chloride (SubPc), copper(II)phthalocyanine (CuPc), tetraphenyldibenzoperiplantene (DBP), or any combination thereof.
In paragraph 1, The above n-type organic semiconductor is an organic photodetector, wherein the n-type organic semiconductor is a C60 fullerene, a C70 fullerene, or any combination thereof.
In paragraph 1, An organic photodetector, wherein the first layer is a mixed layer in which the p-type organic semiconductor and the n-type organic semiconductor are mixed.
In paragraph 1, The first layer above is a bilayer including a first donor layer and a first acceptor layer, and The first acceptor layer is disposed between the first donor layer and the second layer, and The first donor layer comprises the p-type organic semiconductor, and An organic photodetector in which the first acceptor layer comprises the n-type organic semiconductor.
In Paragraph 7, The first donor layer and the first acceptor layer form a PN junction, and An organic photodetector in which the first acceptor layer and the second layer form a PN junction.
In Paragraph 7, An organic photodetector in which the p-type organic semiconductor included in the first donor layer and the p-type organic semiconductor included in the second layer are identical to each other.
In Paragraph 9, The above-mentioned same p-type organic semiconductor is an organic photodetector, which is a SubPc, CuPc, DBP, or any combination thereof.
In Paragraph 7, The thickness of the first donor layer is 10 Å to 1000 Å, and The thickness of the first acceptor layer is 10 Å to 1000 Å, and An organic photodetector having a second layer thickness of 5 Å to 200 Å.
In paragraph 1, It further includes a hole transport region disposed between the anode and the active layer, and The above hole transport region includes a hole injection layer, a hole transport layer, an electron blocking layer, or any combination thereof, and The above electron transport region comprises a hole blocking layer, an electron transport layer, an electron injection layer, or any combination thereof, in an organic photodetector.
In Paragraph 12, The above hole transport region includes a hole transport layer, and The above electron transport region comprises an organic photodetector, wherein the electron transport region comprises a hole blocking layer, an electron transport layer, or any combination thereof.
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In paragraph 1, 10⁻⁵ mA/ cm² at -3V reverse bias An organic photodetector exhibiting a dark current density of the following magnitude.
An electronic device comprising an organic photodetector according to any one of claims 1 through 13 and 16.
An electronic device comprising a light-emitting element in Clause 17.
An electronic device comprising a thin-film transistor further comprising, in paragraph 17.
A substrate including a photodetection region and a light emission region; An organic photodetector disposed on the above photodetection area; and It includes a light-emitting element disposed on the light-emitting region, and The above organic photodetector comprises a first pixel electrode, a counter electrode facing the first pixel electrode, and a first common layer, an active layer, and a second common layer sequentially disposed between the first pixel electrode and the counter electrode. The active layer comprises a first layer and a second layer, the first layer is disposed between the first pixel electrode and the second layer, the first layer comprises a p-type organic semiconductor and an n-type organic semiconductor, and the second layer comprises a p-type organic semiconductor. The light-emitting element comprises a second pixel electrode, a counter electrode facing the second pixel electrode, a first common layer, a light-emitting layer, and a second common layer arranged sequentially between the second pixel electrode and the counter electrode, and The first pixel electrode and the active layer are arranged corresponding to the photodetection region, and The second pixel electrode and the light-emitting layer are arranged corresponding to the light-emitting region, and An electronic device in which the first common layer, the second common layer, and the opposing electrode are disposed across the entire photodetection region and the light emission region.

Description

Organic photodetector and electronic device including the same This relates to an organic photodetector and an electronic device including the same. Photovoltaic devices are devices that convert light and electrical signals, including photodiodes and phototransistors, and can be applied to image sensors, solar cells, organic light-emitting diodes, etc. In the case of silicon, which is mainly used in photodiodes, sensitivity may decrease as the pixel size becomes smaller and the absorption area shrinks. Accordingly, organic materials that can replace silicon are being researched. Organic materials have a high absorption coefficient and can selectively absorb light in specific wavelength ranges depending on their molecular structure, so they can simultaneously replace photodiodes and color filters, which is very advantageous for improving sensitivity and high integration. Organic photodetectors (OPDs) containing such organic materials can be applied, for example, to display devices and image sensors. FIGS. 1 and FIGS. 2 are schematic diagrams showing the structure of an organic photodetector according to one embodiment, respectively. Figure 3a is a diagram showing the energy diagram of a conventional organic photodetector. FIG. 3b is a diagram illustrating the energy diagram of an organic photodetector according to one embodiment. FIGS. 4 and FIGS. 5 are schematic diagrams showing the structure of an electronic device according to one embodiment, respectively. FIGS. 6a and FIGS. 6b are drawings illustrating an electronic device according to one embodiment, respectively. Figure 7 shows the current density-voltage curve (JV curve) of the organic photodetectors fabricated in Comparative Example 1 and Example 1. Figure 8 shows the wavelength-dependent external quantum efficiency (EQE) of the organic photodetectors fabricated in Comparative Example 1 and Example 1. The present invention is capable of various modifications and may have various embodiments; specific embodiments are illustrated in the drawings and described in detail in the detailed description. The effects and features of the present invention, and the methods for achieving them, will become clear by referring to the embodiments described below in detail together with the drawings. However, the present invention is not limited to the embodiments disclosed below but can be implemented in various forms. In the following examples, singular expressions include plural expressions unless the context clearly indicates otherwise. In the following embodiments, terms such as "include" or "have" mean that the features or components described in the specification are present, and do not preclude the possibility that one or more other features or components may be added. In the following embodiments, when a part such as a film, region, or component is described as being on or above another part, it includes not only cases where it is directly on top of another part, but also cases where another film, region, or component is interposed in between. When describing with reference to the drawings, identical or corresponding components are assigned the same reference numerals, and redundant descriptions thereof are omitted. In the drawings, the size of components may be exaggerated or reduced for convenience of explanation. For example, the size and thickness of each component shown in the drawings are depicted arbitrarily for convenience of explanation, so the present invention is not necessarily limited to what is illustrated. [Description of Figs. 1 and 2] FIG. 1 schematically illustrates a cross-sectional view of an organic photodetector (10) according to one embodiment. Referring to FIG. 1, an organic photodetector (10) according to one embodiment includes an anode (110), a cathode (150) facing the anode (110), and an active layer (130) disposed between the anode (110) and the cathode (150). The active layer (130) is a layer that generates excitons by receiving light from the outside and then separates the generated excitons into holes and electrons. The active layer (130) may include a p-type organic semiconductor and an n-type organic semiconductor. The active layer (130) comprises a first layer (131) and a second layer (132), and the first layer (131) is positioned between the anode (110) and the second layer (132). The first layer (131) includes a p-type organic semiconductor and an n-type organic semiconductor, and the second layer (132) may include a p-type organic semiconductor. According to one embodiment, the second layer (132) may be composed of a p-type organic semiconductor. According to one embodiment, the n-type organic semiconductor may have a lower LUMO energy level than the p-type organic semiconductor. Thus, the organic photodetector (10) can reduce the energy barrier when electrons generated in the first layer (131) move toward the cathode (150) direction by placing a second layer (132) containing a p-type organic semiconductor, which is a mat