KR-102962827-B1 - SUBSTRATE TREATING APPARATUS AND SUBSTRATE TREATING METHOD USING THE SAME

KR102962827B1KR 102962827 B1KR102962827 B1KR 102962827B1KR-102962827-B1

Abstract

The present invention provides a substrate processing apparatus and a substrate processing method using the same, wherein stability is ensured by proceeding with the process under lower pressure conditions. The substrate processing apparatus comprises a chamber into which a substrate having residual rinse liquid is introduced, the chamber including a housing and a processing area; a supply port installed in the housing and supplying a first drying gas and a second drying gas to the processing area; a first supply line connected to the supply port and through which the first drying gas is moved; and a second supply line connected to the supply port and through which the second drying gas is moved, wherein the first drying gas is a gas below a first temperature and the second drying gas is a gas above the first temperature, and the second drying gas dries the rinse liquid remaining on the substrate.

Inventors

이재성
고정석
최해원

Assignees

세메스 주식회사

Dates

Publication Date: 20260508
Application Date: 20210908

Claims (20)

A chamber into which a substrate with residual rinse liquid is introduced, comprising a housing and a processing area; A supply port installed in the above housing and supplying a first drying gas and a second drying gas to the above processing area; A first supply line connected to the above supply port and through which the first drying gas is moved; A second supply line connected to the supply port and through which the second drying gas is moved; A heating element for controlling the temperature of the drying gas; and It includes an exhaust member installed in the above housing and discharging dry gas remaining in the processing area to the outside, The first drying gas is a gas below a first temperature, and the second drying gas is a gas above the first temperature, and the second drying gas dries the rinse liquid remaining on the substrate, The heating element is installed in the second supply line and is not installed in the first supply line, A substrate processing device in which at least one of the inflow amount of the second drying gas and the outflow amount of the drying gas remaining in the processing area is controlled while the second drying gas moves.
In Article 1, If the pressure within the above processing area is lower than the preset pressure, the first drying gas is supplied to the above processing area, and A substrate processing device that supplies the second drying gas to the processing area when the pressure within the processing area is greater than or equal to the preset pressure.
In Paragraph 2, A substrate processing device having a preset pressure of 10 bar or more and 40 bar or less.
In Article 1, A substrate processing device in which the first drying gas does not dry the rinse liquid.
In Article 1, A substrate processing device in which the first temperature is 150 degrees or higher and 250 degrees or lower.
In Article 1, The surface tension between the rinse liquid and the first drying gas is greater than 5 dyn/cm, and A substrate processing apparatus in which the surface tension between the rinse liquid and the second drying gas is 5 dyn/cm or less.
In Article 1, The above supply port includes a first supply port connected to the first supply line and a second supply port connected to the second supply line, and The first drying gas is supplied to the processing area through the first supply port, and A substrate processing device in which the second drying gas is supplied to the processing area through the second supply port.
In Article 1, A substrate processing device further comprising a storage unit connected to the first supply line and the second supply line.
In Paragraph 8, A substrate processing apparatus comprising a storage unit connected to the first supply line and a first storage unit for storing the first drying gas, and a second storage unit connected to the second supply line and for storing the second drying gas.
A chamber into which a substrate with residual rinse liquid is introduced, comprising a housing and a processing area; A supply port installed in the above housing and supplying a first drying gas and a second drying gas in a gaseous state to the above processing area; A first supply line connected to the above supply port and through which the first drying gas is moved; A second supply line connected to the supply port and through which the second drying gas is moved; A heating element for controlling the temperature of the drying gas; and It includes an exhaust member installed in the above housing and discharging dry gas remaining in the processing area to the outside, The surface tension between the rinse liquid and the first drying gas is greater than 5 dyn/cm, and the surface tension between the rinse liquid and the second drying gas is less than 5 dyn/cm. The heating element is installed in the second supply line and is not installed in the first supply line, A substrate processing device in which at least one of the inflow amount of the second drying gas and the outflow amount of the drying gas remaining in the processing area is controlled while the second drying gas moves.
In Article 10, The first drying gas is supplied until the pressure within the processing area reaches a preset pressure, and A substrate processing device that supplies the second drying gas when the pressure within the processing area reaches the preset pressure.
In Paragraph 11, A substrate processing device having a preset pressure of 10 bar or more and 40 bar or less.
In Article 10, A substrate processing apparatus that dries a rinse liquid applied on the substrate using the second drying gas.
In Article 10, The above first dry gas is CO2 gas with a temperature lower than the first temperature, and A substrate processing device in which the second drying gas is CO2 gas with a temperature higher than the first temperature.
In Paragraph 14, A substrate processing device in which the first temperature is 150 degrees or higher and 250 degrees or lower.
In Article 10, The above supply port includes a first supply port connected to the first supply line and a second supply port connected to the second supply line, and The first drying gas is supplied to the processing area through the first supply port, and A substrate processing device in which the second drying gas is supplied to the processing area through the second supply port.
In Article 10, A substrate processing device further comprising a storage unit connected to the first supply line and the second supply line.
In Paragraph 17, A substrate processing apparatus comprising a storage unit connected to the first supply line and a first storage unit for storing the first drying gas, and a second storage unit connected to the second supply line and for storing the second drying gas.
Load the substrate with residual rinse liquid into the chamber, and A first drying gas is supplied into the chamber to increase the pressure inside the chamber, and When the pressure inside the chamber reaches a preset pressure, the supply of the first drying gas is stopped, and a second drying gas different from the first drying gas is supplied. It includes drying the rinse liquid on the substrate using the second drying gas, and The above second dry gas is a gas with a temperature of 150 degrees or higher and 250 degrees or lower, and The surface tension between the rinse liquid and the second drying gas is 5 dyn/cm or less, and A heating element for controlling the temperature of the drying gas is installed in a second supply line through which the second drying gas travels, and is not installed in a first supply line through which the first drying gas travels. While supplying the second drying gas, the drying gas remaining in the processing area of the chamber is discharged to the outside, and A substrate processing method in which, while supplying the second drying gas, at least one of the amount of the second drying gas flowing in and the amount of the drying gas remaining in the processing area flowing in is controlled.
In Paragraph 19, A substrate processing method in which the above-mentioned preset pressure is 10 bar or more and 40 bar or less.

Description

Substrate Treating Apparatus and Substrate Treating Method Using the Same The present invention relates to a substrate processing apparatus and a substrate processing method using the same. As semiconductor devices become more dense, highly integrated, and high-performance, the miniaturization of circuit patterns is progressing rapidly. Consequently, contaminants such as particles, organic pollutants, and metal contaminants remaining on the substrate surface have a significant impact on device characteristics and production yield. Accordingly, cleaning processes to remove various contaminants attached to the substrate surface have emerged as critically important in semiconductor device manufacturing, and cleaning processes are being implemented to treat the substrate at the pre- and post-stages of each unit process in semiconductor device manufacturing. Recently, supercritical drying processes using supercritical fluids to dry substrates are being utilized. However, since the supercritical drying process is carried out under high pressure and high temperature conditions, it can be vulnerable in terms of stability. FIG. 1 is a plan view for illustrating a substrate processing apparatus according to some embodiments of the present invention. FIGS. 2 and FIGS. 4 are exemplary cross-sectional views for illustrating a substrate processing apparatus according to some embodiments. FIGS. 5 to 7 are graphs for illustrating a substrate processing apparatus according to some embodiments. FIGS. 8 and 9 are graphs for illustrating dry gas according to some embodiments. FIG. 10 is a flowchart for explaining a substrate processing method according to some embodiments. FIG. 11 is an exemplary drawing for explaining step S100 of FIG. 10. FIGS. 12a to 13 are exemplary drawings for explaining step S200 of FIG. 10. FIGS. 14a to 15 are exemplary drawings for explaining steps S300 and S400 of FIG. 10. Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The advantages and features of the present invention, and the methods for achieving them, will become clear by referring to the embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below but can be implemented in various different forms. These embodiments are provided merely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims. Throughout the specification, the same reference numerals refer to the same components. When elements or a layer are referred to as being "on" or "on" another element or layer, it includes not only being directly on top of the other element or layer but also cases where another layer or element is interposed in between. On the other hand, when an element is referred to as being "directly on" or "directly on," it indicates that no other element or layer is interposed in between. Spatially relative terms such as "below," "beneath," "lower," "above," and "upper" may be used to facilitate the description of the relationship between one element or component and another, as illustrated in the drawings. Spatially relative terms should be understood as encompassing different orientations of the element during use or operation, in addition to the orientations illustrated in the drawings. For example, if an element illustrated in the drawings is flipped, the element described as "below" or "beneath" of another element may be placed "above" of that other element. Therefore, the exemplary term "below" may encompass both the lower and upper directions. Elements may also be oriented in other directions, and accordingly, spatially relative terms may be interpreted according to the orientation. Although terms such as "first," "second," etc. are used to describe various elements, components, and/or sections, it goes without saying that these elements, components, and/or sections are not limited by these terms. These terms are used merely to distinguish one element, component, or section from another. Accordingly, it goes without saying that the first element, first component, or first section mentioned below may be a second element, second component, or second section within the technical scope of the present invention. The terms used herein are for describing the embodiments and are not intended to limit the invention. In this specification, the singular form includes the plural form unless specifically stated otherwise in the text. As used herein, "comprises" and/or "comprising" do not exclude the presence or addition of one or more other components, steps, actions, and/or elements to the mentioned components, steps, actions, and/or elements. Unless otherwise defined, all terms used in this specification (including technical and scientif