KR-102962874-B1 - Plasma processing device

KR102962874B1KR 102962874 B1KR102962874 B1KR 102962874B1KR-102962874-B1

Abstract

The disclosed plasma processing apparatus comprises a chamber, a gas supply unit, a substrate support unit, a ground electrode, an upper electrode, first and second high-frequency power supplies, and a rectifier. The gas supply unit is configured to supply gas into the chamber. The substrate support unit is installed inside the chamber. The ground electrode is installed inside the chamber. The upper electrode is installed above the substrate support unit and the ground electrode. The first high-frequency power supply is electrically connected to the upper electrode to generate plasma from the gas inside the chamber. The second high-frequency power supply is electrically connected to the upper electrode. The rectifier is configured to block the application of a negative voltage to the upper electrode by the second high-frequency power supply.

Inventors

마츠도 다츠오

Assignees

도쿄엘렉트론가부시키가이샤

Dates

Publication Date: 20260508
Application Date: 20211108
Priority Date: 20201118

Claims (8)

chamber and, A gas supply unit configured to supply gas into the above chamber, and A substrate support installed within the above chamber, and A ground electrode that is electrically grounded and installed within the chamber, and An upper electrode installed above the substrate support and the ground electrode, and A first high-frequency power source electrically connected to the upper electrode to generate plasma from gas within the chamber, and A second high-frequency power source electrically connected to the upper electrode, and A first rectifier configured to block the application of a negative voltage to the upper electrode by the second high-frequency power source, and A second rectifier configured to block the application of a constant voltage to the upper electrode by the first high-frequency power source. A plasma processing device equipped with
In paragraph 1, The apparatus further comprises a pressure control unit configured to control the pressure of the gas within the chamber, and The pressure control unit is configured to set the pressure of the gas in the chamber to 13.3 Pa or higher when plasma is generated in the chamber. Plasma processing device.
In paragraph 1 or 2, The above first rectifier includes a diode, The cathode of the above diode is connected to a power supply line connected between the second high-frequency power source and the upper electrode, and The anode of the above diode is connected to ground. Plasma processing device.
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In paragraph 1, The above second rectifier includes a diode, The anode of the diode of the second rectifier is connected to a power supply line connected between the first high-frequency power source and the upper electrode, and The cathode of the diode of the second rectifier is connected to ground. Plasma processing device.
In paragraph 1 or 2, The above substrate support is a plasma processing device including a lower electrode which is the ground electrode.
In paragraph 1 or 2, The above substrate support includes a lower electrode, and The plasma processing device further comprises an impedance circuit connected between the lower electrode and ground, and The ground electrode is installed around the substrate support. Plasma processing device.
In paragraph 1 or 2, A plasma processing device in which the frequency of the high-frequency power output from the above-mentioned second high-frequency power source is 100 kHz or higher.

Description

Plasma processing device An exemplary embodiment of the present disclosure relates to a plasma processing apparatus. A capacitively coupled plasma processing apparatus is used in plasma processing such as film deposition. The capacitively coupled plasma processing apparatus comprises a chamber, a substrate support, an upper electrode, a gas supply unit, and an exhaust device. The substrate support includes a lower electrode and is installed within the chamber. The upper electrode is installed above the lower electrode. The gas supply unit and the exhaust device are connected to the chamber. Patent Document 1, as described below, discloses such a plasma processing apparatus. The plasma processing apparatus of Patent Document 1 further comprises a first high-frequency power source and a second high-frequency power source. The first high-frequency power source supplies high-frequency power to an upper electrode to generate plasma within a chamber. The second high-frequency power source applies a high-frequency bias to the upper electrode to control the energy of ions colliding with a substrate on a substrate support from the plasma. FIG. 1 is a schematic drawing showing a plasma processing apparatus according to one exemplary embodiment. FIG. 2(a) is a diagram showing the waveform of an example first high-frequency voltage applied to an upper electrode, and FIG. 2(b) is a diagram showing the waveform of an example second high-frequency voltage applied to an upper electrode. Figure 3 is a graph showing the experimental results. FIG. 4 is a schematic diagram showing a plasma processing apparatus according to another exemplary embodiment. FIG. 5 is a schematic diagram showing a plasma processing apparatus according to another exemplary embodiment. Figure 6 is a diagram showing the waveform of an example of a first high-frequency voltage applied to an upper electrode. Various exemplary embodiments are described below. In one exemplary embodiment, a plasma processing apparatus is provided. The plasma processing apparatus comprises a chamber, a gas supply unit, a substrate support unit, a ground electrode, an upper electrode, a first high-frequency power source, a second high-frequency power source, and a rectifier. The gas supply unit is configured to supply gas into the chamber. The substrate support unit is installed within the chamber. The ground electrode is electrically grounded and installed within the chamber. The upper electrode is installed above the substrate support unit and the ground electrode. The first high-frequency power source is electrically connected to the upper electrode to generate plasma from the gas within the chamber. The second high-frequency power source is electrically connected to the upper electrode. The rectifier is configured to block the application of a negative voltage to the upper electrode by the second high-frequency power source. In the plasma processing apparatus of the above embodiment, plasma is generated within the chamber by supplying high-frequency power from a first high-frequency power source to an upper electrode. The energy of ions colliding with the substrate on the substrate support from the plasma is controlled by a high-frequency voltage applied to the upper electrode from a second high-frequency power source. Although a negative voltage of the high-frequency voltage from the second high-frequency power source may affect the density of the plasma within the chamber, the negative voltage is blocked by a rectifier. Therefore, according to the plasma processing apparatus of the above embodiment, it is possible to control the energy of ions colliding with the substrate while suppressing the influence on the density of the plasma caused by the high-frequency voltage applied to the upper electrode from the second high-frequency power source. In one exemplary embodiment, the plasma processing apparatus may further comprise a pressure control unit. The pressure control unit is configured to control the pressure of the gas in the chamber. The pressure control unit is configured to set the pressure of the gas in the chamber to 13.3 Pa (100 mTorr) or higher when generating plasma in the chamber. In one exemplary embodiment, the rectifier may include a diode. The cathode of the diode is connected to a power supply line connected between a second high-frequency power source and an upper electrode. The anode of the diode is connected to ground. In one exemplary embodiment, the plasma processing apparatus may further comprise another rectifier configured to block the application of a constant voltage to the upper electrode by the first high-frequency power source. In one exemplary embodiment, the other rectifier may include a diode. The anode of the diode of the other rectifier is connected to a power supply line connected between the first high-frequency power source and the upper electrode. The cathode of the diode of the other rectifier is connected to ground. In one exempl