KR-102962883-B1 - Display panels and mobile terminals

KR102962883B1KR 102962883 B1KR102962883 B1KR 102962883B1KR-102962883-B1

Abstract

An embodiment of the present application discloses a display panel and a mobile terminal, wherein the display panel includes a light-emitting layer, and the light-emitting layer includes a first electrode, a hole injection layer, a first light-emitting unit layer, an electron generation layer, a hole generation layer, a second light-emitting unit layer, and a second electrode sequentially stacked along a first direction; the technical solution of the present application can increase the current efficiency of the light-emitting element of the display panel operating at a high temperature or a low temperature without changing the structure of the light-emitting layer.

Inventors

후아 젱센
김 무겸

Assignees

우한 차이나 스타 옵토일렉트로닉스 세미컨덕터 디스플레이 테크놀로지 컴퍼니 리미티드

Dates

Publication Date: 20260512
Application Date: 20230629
Priority Date: 20221213

Claims (20)

In the case of display panels, Substrate layer; and A light-emitting layer comprising a first electrode, a hole injection layer, a first light-emitting unit layer, an electron generation layer, a hole generation layer, a second light-emitting unit layer, and a second electrode, wherein the first electrode is installed on the substrate layer, the electron generation layer comprises an n-type dopant, and the hole generation layer comprises a p-type dopant; Here, the first direction is perpendicular to the substrate layer and extends from the substrate layer to the light-emitting layer, and in the first direction, the n-type dopant in the electron generation layer has a plurality of doping concentrations, and the doping concentration of the n-type dopant in the electron generation layer decreases along the first direction, and/or The p-type dopant in the hole generation layer has a plurality of doping concentrations, and the doping concentration of the p-type dopant in the hole generation layer increases along the first direction, and The light-emitting layer further comprises an intermediate layer between the electron generation layer and the hole generation layer, and the material of the intermediate layer has the performance of transmitting electrons. Display panel.
In paragraph 1, When the doping concentration of the n-type dopant in the electron generation layer decreases along the first direction, the doping concentration of the n-type dopant in the electron generation layer gradually decreases along the first direction; When the doping concentration of the p-type dopant in the hole-generating layer increases along the first direction, the doping concentration of the p-type dopant in the hole-generating layer gradually increases along the first direction. Display panel.
In paragraph 2, The rate of change of the doping concentration of the n-type dopant in the electron generation layer gradually decreases along the first direction; The rate of change of the doping concentration of the p-type dopant in the hole-generating layer gradually increases along the first direction. Display panel.
In paragraph 2, The absolute value of the rate of change of the doping concentration of the n-type dopant in the electron generation layer is the same as the absolute value of the rate of change of the doping concentration of the p-type dopant in the hole generation layer. Display panel.
In paragraph 2, The doping concentration of the n-type dopant is from a first concentration to a second concentration, and the difference between the first concentration and the second concentration is taken in the range of 1 wt% to 19 wt%; The doping concentration of the above p-type dopant ranges from a third concentration to a fourth concentration, and the difference between the third concentration and the fourth concentration is taken in the range of 1 wt% to 19 wt%. Display panel.
In paragraph 5, The first concentration is taken in the range of 6 wt% to 20 wt%, and the second concentration is taken in the range of 1 wt% to 5 wt%; The above third concentration is taken in the range of 1 wt% to 5 wt%, and the above fourth concentration is taken in the range of 6 wt% to 20 wt%, Display panel.
In paragraph 1, The electron generation layer comprises X layers of electron generation sublayers stacked along the first direction, wherein the concentration of the n-type dopant in the first electron generation sublayer is N1 , the concentration of the n-type dopant in the second electron generation sublayer is N2 , the concentration of the n-type dopant in the third electron generation sublayer is N3 , ......, the concentration of the n-type dopant in the X-th electron generation sublayer is NX ; Here, X is a positive integer greater than or equal to 2, and N 1 > N 2 > N 3 > ... > N X-1 > N X , Display panel.
In Paragraph 7, The hole generation layer comprises Y layers of hole generation sublayers stacked along the first direction, wherein the concentration of the p-type dopant in the first hole generation sublayer is M1 , the concentration of the p-type dopant in the second hole generation sublayer is M2 , the concentration of the p-type dopant in the third hole generation sublayer is M3 , ......, the concentration of the p-type dopant in the Y-th hole generation sublayer is MY ; Here, Y is a positive integer greater than or equal to 2, and M 1 < M 2 < M 3 < … < M Y-1 < M Y , Display panel.
In paragraph 8, The electron generation layer comprises a first electron generation sublayer, a second electron generation sublayer, and a third electron generation sublayer stacked along the first direction, and the hole generation layer comprises a first hole generation sublayer, a second hole generation sublayer, and a third hole generation sublayer stacked along the first direction; Here, the concentration of the n-type dopant in the first electron generation sublayer is equal to the concentration of the p-type dopant in the third hole generation sublayer, the concentration of the n-type dopant in the second electron generation sublayer is equal to the concentration of the p-type dopant in the second hole generation sublayer, and the concentration of the n-type dopant in the third electron generation sublayer is equal to the concentration of the p-type dopant in the first hole generation sublayer. Display panel.
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In paragraph 1, The material of the above intermediate layer comprises at least one of a metal compound, a basic metal, and an inorganic compound, Display panel.
A mobile terminal comprises a display panel, and the display panel is, Substrate layer; and A light-emitting layer comprising a first electrode, a hole injection layer, a first light-emitting unit layer, an electron generation layer, a hole generation layer, a second light-emitting unit layer, and a second electrode, wherein the first electrode is installed on the substrate layer, the electron generation layer comprises an n-type dopant, and the hole generation layer comprises a p-type dopant; Here, the first direction is perpendicular to the substrate layer and extends from the substrate layer to the light-emitting layer, and in the first direction, the n-type dopant in the electron generation layer has a plurality of doping concentrations, and the doping concentration of the n-type dopant in the electron generation layer decreases along the first direction, and/or The p-type dopant in the hole generation layer has a plurality of doping concentrations, and the doping concentration of the p-type dopant in the hole generation layer increases along the first direction, and The light-emitting layer further comprises an intermediate layer between the electron generation layer and the hole generation layer, and the material of the intermediate layer has the performance of transmitting electrons. Mobile terminal.
In Paragraph 12, When the doping concentration of the n-type dopant in the electron generation layer decreases along the first direction, the doping concentration of the n-type dopant in the electron generation layer gradually decreases along the first direction; When the doping concentration of the p-type dopant in the hole-generating layer increases along the first direction, the doping concentration of the p-type dopant in the hole-generating layer gradually increases along the first direction. Mobile terminal.
In Paragraph 13, The rate of change of the doping concentration of the n-type dopant in the electron generation layer gradually decreases along the first direction; The rate of change of the doping concentration of the p-type dopant in the hole-generating layer gradually increases along the first direction. Mobile terminal.
In Paragraph 13, The absolute value of the rate of change of the doping concentration of the n-type dopant in the electron generation layer is the same as the absolute value of the rate of change of the doping concentration of the p-type dopant in the hole generation layer. Mobile terminal.
In Paragraph 13, The doping concentration of the n-type dopant is from a first concentration to a second concentration, and the difference between the first concentration and the second concentration is taken in the range of 1 wt% to 19 wt%; The doping concentration of the above p-type dopant ranges from a third concentration to a fourth concentration, and the difference between the third concentration and the fourth concentration is taken in the range of 1 wt% to 19 wt%. Mobile terminal.
In Paragraph 16, The first concentration is taken in the range of 6 wt% to 20 wt%, and the second concentration is taken in the range of 1 wt% to 5 wt%; The above third concentration is taken in the range of 1 wt% to 5 wt%, and the above fourth concentration is taken in the range of 6 wt% to 20 wt%, Mobile terminal.
In Paragraph 12, The electron generation layer comprises X layers of electron generation sublayers stacked along the first direction, wherein the concentration of the n-type dopant in the first electron generation sublayer is N1 , the concentration of the n-type dopant in the second electron generation sublayer is N2 , the concentration of the n-type dopant in the third electron generation sublayer is N3 , ......, the concentration of the n-type dopant in the X-th electron generation sublayer is NX ; Here, X is a positive integer greater than or equal to 2, and N 1 > N 2 > N 3 > ... > N X-1 > N X , Mobile terminal.
In Paragraph 18, The hole generation layer comprises Y layers of hole generation sublayers stacked along the first direction, wherein the concentration of the p-type dopant in the first hole generation sublayer is M1 , the concentration of the p-type dopant in the second hole generation sublayer is M2 , the concentration of the p-type dopant in the third hole generation sublayer is M3 , ......, the concentration of the p-type dopant in the Y-th hole generation sublayer is MY ; Here, Y is a positive integer greater than or equal to 2, and M 1 < M 2 < M 3 < … < M Y-1 < M Y , Mobile terminal.
In Paragraph 19, The electron generation layer comprises a first electron generation sublayer, a second electron generation sublayer, and a third electron generation sublayer stacked along the first direction, and the hole generation layer comprises a first hole generation sublayer, a second hole generation sublayer, and a third hole generation sublayer stacked along the first direction; Here, the concentration of the n-type dopant in the first electron generation sublayer is equal to the concentration of the p-type dopant in the third hole generation sublayer, the concentration of the n-type dopant in the second electron generation sublayer is equal to the concentration of the p-type dopant in the second hole generation sublayer, and the concentration of the n-type dopant in the third electron generation sublayer is equal to the concentration of the p-type dopant in the first hole generation sublayer. Mobile terminal.

Description

Display panels and mobile terminals This application belongs to the field of display technology, and in particular relates to display panels and mobile terminals. OLED technology is widely used in the display industry and has been increasingly utilized in fields such as automotive displays, computer monitors, TV screens, mobile phone screens, and commercial displays over the past few years, with broad application prospects. With the advancement of display technology and the increasing demand for display lifespan, conventional single-layer RGB displays struggle to meet the requirements for high brightness and long lifespan. To realize high performance demands for high brightness and long lifespan, more complex structures of stacked RGB or W devices are generally used, which can achieve luminous efficiency several times higher than that of single-layer devices. However, these processes are more difficult, and stacked light-emitting devices face risks of high driving voltage, low efficiency, and reduced lifespan under high-temperature conditions. Specifically, this is because defects are prone to forming at the interface between the electron generation layer (n-CGL) and the hole generation layer (p-CGL) when operating at high or low temperatures. This hinders charge generation and separation, leading to increased device voltage, charge imbalance, reduced luminous efficiency, and a simultaneous decline in lifespan stability. Hereinafter, through the detailed description of specific embodiments of the present application together with the attached drawings, the technical solution and other beneficial effects of the present application will become apparent. FIG. 1 is a schematic diagram of a display panel structure provided by an embodiment of the present application. FIG. 2a is a schematic diagram of the structure of a light-emitting element provided by an embodiment of the present application. FIG. 2b is a schematic diagram of the structure of another light-emitting element provided by an embodiment of the present application. FIG. 3 is a schematic diagram of the concentration distribution of n-type dopants and p-type dopants between the thickness of the electron generation layer and the thickness of the hole generation layer in a display panel provided by an embodiment of the present application. FIG. 4 is a schematic diagram of the concentration distribution of n-type dopants and p-type dopants between the thickness of the electron generation layer and the thickness of the hole generation layer in another display panel provided by an embodiment of the present application. FIG. 5 is a schematic diagram of the concentration distribution of n-type dopants and p-type dopants between the thickness of the electron generation layer and the thickness of the hole generation layer in another display panel provided by an embodiment of the present application. FIG. 6 is a schematic diagram of the thickness of the hole generation layer and the concentration distribution of p-type dopants in a display panel provided by an embodiment of the present application. FIG. 7 is a schematic diagram of the concentration distribution of n-type dopants and the thickness of the electron generation layer in a display panel provided by an embodiment of the present application. FIG. 8 is a schematic diagram of the concentration distribution of n-type dopants and the thickness of the electron generation layer in another display panel provided by an embodiment of the present application. FIG. 9 is a schematic diagram of the thickness-doping concentration distribution of the charge generation layer in another display panel provided by an embodiment of the present application. FIG. 10 is a schematic diagram of the thickness-dopant doping concentration distribution of a charge generation layer in another display panel provided by an embodiment of the present application. Hereinafter, the technical solution means in the embodiments of the present application will be explained clearly and completely in conjunction with the drawings of the embodiments of the present application. Clearly, the described embodiments are only some embodiments of the present application and not all embodiments. All other embodiments obtained by a person skilled in the art without creative labor based on the embodiments of the present application fall within the scope of protection of the present application. Embodiments of the present application provide a display panel and a mobile terminal. Each of these is described in detail below. It should be noted that the order of the following description of the embodiments is not intended to limit the preferred order of the embodiments. Furthermore, in the description of the present application, the term "includes" means "includes but is not limited thereto." Terms such as first, second, third, etc., are used merely for indication and do not impose numerical requirements or establish an order. Various embodiments of the pres