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KR-102962903-B1 - sputtering device

KR102962903B1KR 102962903 B1KR102962903 B1KR 102962903B1KR-102962903-B1

Abstract

Gas is supplied over the entire surface of the target. The vacuum vessel (2) of the sputtering device (1) is equipped with at least one target holder (32) that holds the target (30). The target holder is equipped with a gas inlet (51) that introduces gas (10) and a pair of gas outlets (54) that discharge gas into the vacuum vessel, formed at least a portion of the periphery of the target and facing each other.

Inventors

  • 쿠보타 키요시
  • 안도 야스노리

Assignees

  • 닛신덴키 가부시키 가이샤

Dates

Publication Date
20260511
Application Date
20220629
Priority Date
20210709

Claims (11)

  1. A sputtering device for depositing a film on a substrate by sputtering a target inside a vacuum vessel, The vacuum vessel has at least one holding part that holds the target, and The above maintenance part is, A gas introduction unit for introducing gas into the above maintenance unit, and The above-mentioned holding member is provided with a pair of openings formed across at least a portion of the periphery of the target placement position and opposite the target placement position with the target placement position in between when viewed from a vertical downward direction, and for releasing the gas introduced into the holding member into the vacuum vessel. The above-mentioned maintenance part has a gas path communicating the gas introduction part and the opening, and The above gas path is, A main path for receiving gas introduced from the above gas introduction section, and It is provided with a plurality of branch paths that communicate with the main path and introduce gas within the main path into the opening, and A sputtering device in which the thickness of each of the plurality of branch paths is smaller than the thickness of the main path.
  2. In Article 1, The shape of the target placement position when viewed from the vertical downward direction is a rectangular shape, and The above-mentioned opening is formed across the entire opposite side of the target placement position in a sputtering device.
  3. In Article 1 or Article 2, The above opening is a sputtering device formed across the entire opposite long side of the target placement position.
  4. In Article 1 or Article 2, The above-mentioned retaining member comprises a magnet and a magnetic member magnetized by the magnet, and The above magnet and the above magnetic member form a magnetic circuit that forms a magnetic field on the target placement position, and An air gap is formed in a part of the above magnetic circuit, and A sputtering device in which a portion of the magnetic circuit having the above-mentioned gap is installed outside the vacuum vessel.
  5. In Article 4, The above-mentioned retaining part is a sputtering device having an adjusting mechanism for adjusting the width of the above-mentioned gap.
  6. In Article 5, The above adjustment mechanism is installed on the upper surface of the retaining part as part of the above magnetic member and has a pair of magnetic adjustment members that define the above gap, and At least one of the pair of self-adjusting members has an elongated hole formed therein that penetrates a fixing member, which fixes the self-adjusting member to the retaining part as part of the self-adjusting member, and also extends in the width direction of the gap. The penetration position of the fixed member in the above-mentioned elongated hole is a variable sputtering device.
  7. In Article 6, The shape of the target placement position when viewed from the vertical downward direction is a rectangular shape, and The above pair of self-adjusting members are installed by being extended in the longitudinal direction of the target placement position, and At least one of the above pair of self-adjusting members is divided into a plurality of sections along the length direction, and A sputtering device that defines the width of the gap by defining the penetration position of the fixing member in the elongated hole for each of the plurality of sections.
  8. In Article 4, A sputtering device in which a material having a permeability different from that of the magnetic material is inserted into the above void.
  9. In Article 1 or Article 2, A sputtering device having a plurality of the above-mentioned retaining parts.
  10. In Article 1 or Article 2, The vacuum container has at least one exhaust section for vacuuming the interior of the vacuum container, and The above exhaust section is a sputtering device installed adjacent to the above maintenance section.
  11. delete

Description

sputtering device The present invention relates to a sputtering device. Various types of sputtering devices have been proposed in the past. As an example of a sputtering device, a magnetron sputtering device can be cited. In the magnetron sputtering device, a magnetic field is formed on the surface of a target by a magnet installed on the back side of the target, and after the gas within the magnetic field is plasmafied, ions from the plasmafied gas are collided with the target. As the ions collide with the target, sputter particles are ejected from the target, and a film is formed on a substrate installed opposite the target by these particles. It is known that in a sputtering apparatus, non-uniformity occurs in the film thickness of a thin film formed on a substrate due to the density of gas on the target. An example of a technique for suppressing the occurrence of this non-uniformity is disclosed in Patent Document 1. In the sputtering apparatus of Patent Document 1, two targets are installed as a set within a chamber into which sputter gas is introduced. In addition, the sputtering apparatus of Patent Document 1 has a gas inlet port for introducing a reactive gas from both sides of the set of targets and an exhaust port for exhausting the reactive gas from between the set of targets. FIG. 1 is a drawing showing an overall configuration example of a sputtering apparatus according to Embodiment 1. FIG. 2 is a top view of the target holder according to embodiment 1, as shown by the AA arrow in FIG. 1, and is a top view of the target holder in an assembled state. FIG. 3 is a drawing of the BB arrow of FIG. 1 regarding the target holder of embodiment 1, and is a bottom view of the target holder in an assembled state. FIG. 4 is a drawing of the CC arrow in FIG. 1 of the target holder according to embodiment 1. FIG. 5 is a drawing of the DD arrow in FIG. 1 of the target holder according to embodiment 1. FIG. 6 is a drawing of the EE arrow in FIG. 1 of the target holder according to embodiment 1. FIG. 7 is a cross-sectional view of the FF in FIG. 2 of the target holder according to embodiment 1. FIG. 8 is a cross-sectional view of the target holder in FIG. 2 according to embodiment 1. FIG. 9 is an enlarged view of the H portion of FIG. 2 of the target holder according to embodiment 1. FIG. 10 is a cross-sectional view showing the detailed configuration inside a vacuum vessel according to embodiment 2. FIG. 11 is a drawing of the target holder according to embodiment 2 along the arrow I-I in FIG. 10, and is a bottom view of the target holder in an assembled state. FIG. 12 is a schematic diagram of a magnetic field strength adjustment plate according to embodiments 1 and 3. [Embodiment 1] Hereinafter, an embodiment of the present invention will be described in detail using FIGS. 1 to 9. <Overall configuration of the sputtering device> First, the overall configuration of the sputtering apparatus (1) according to the present embodiment will be described using FIG. 1. FIG. 1 is a drawing showing an example of the overall configuration of the sputtering apparatus (1) according to embodiment 1. As shown in FIG. 1, the sputtering apparatus (1) is a device that sputters a target (30) in a vacuum vessel (2) into which a sputtering gas (10) is introduced to form a film on a substrate (12). Specifically, the sputtering apparatus (1) is equipped with a vacuum vessel (2) that is vacuum-evacuated by a vacuum exhaust device (4). The vacuum vessel (2) is electrically grounded, and a sputtering gas (10) is introduced into it. The gas (10) is supplied from a gas source (6) to a target holder (32) through a gas introduction pipe (50) and a gas introduction section (51), while the flow rate of the gas (10) is adjusted by a flow rate regulator (8). Then, the gas (10) is introduced into the vacuum vessel (2) through the target holder (32). An insulating section (43) is installed between the gas introduction section (51) and the upper surface (3) of the vacuum vessel (2), and between the gas introduction section (51) and the target holder (32). The gas (10) is, for example, argon gas. When performing reactive sputtering, the gas (10) may be a mixed gas of argon gas and an active gas (for example, oxygen gas, nitrogen gas, etc.). Active gases are also referred to as reactive gases. A substrate holder (14) for holding a substrate (12) is installed inside the vacuum vessel (2). In this embodiment, the sputtering device (1) is equipped with a substrate bias power supply (16). The substrate bias power supply (16) applies a substrate bias voltage (Vs) to the substrate holder (14). The substrate bias voltage (Vs) may be a negative DC voltage, a negative pulse voltage, an AC voltage, etc. Additionally, the substrate holder (14) may be electrically grounded when the substrate bias voltage (Vs) is not applied to the substrate (12). Also, reference numeral 40 is an insulating part having a vacuum seal function. Additionally, the substrate (12) i