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KR-102962906-B1 - PLASMA PROCESSING METHOD AND PLASMA PROCESSING DEVICE

KR102962906B1KR 102962906 B1KR102962906 B1KR 102962906B1KR-102962906-B1

Abstract

In a plasma treatment method according to an exemplary embodiment, a first plasma treatment is performed during a first period, and a second plasma treatment is performed during a second period following the first period. During the first and second periods, a first high-frequency power for biasing is continuously supplied to a lower electrode. A second high-frequency power for plasma generation may be supplied as pulsed high-frequency power during a first partial period within each cycle of the first high-frequency power within the first period. The second high-frequency power may be supplied as pulsed high-frequency power during a second partial period within each cycle of the first high-frequency power within the second period.

Inventors

  • 도칸 다카시
  • 구보타 신지
  • 고시미즈 지시오

Assignees

  • 도쿄엘렉트론가부시키가이샤

Dates

Publication Date
20260508
Application Date
20190610
Priority Date
20180622

Claims (9)

  1. As an RF system used in a plasma processing device, A first RF power supply configured to generate bias RF power having a first frequency, wherein the waveform defined by the first frequency has a plurality of cycles, and each cycle is divided into a first half cycle and a second half cycle; A second RF power supply configured to generate source RF power having a second frequency higher than the first frequency; and control unit Includes, The above control unit is: (a) During the first period, the source RF power is generated for at least part of the first half-cycle and is not generated during the second half-cycle, and the second RF power supply is controlled, and (b) to control the second RF power supply such that, during the second period, the source RF power is generated for at least part of the second half-cycle and not generated during the first half-cycle, An RF system used in a plasma processing device that is configured.
  2. An RF system used in a plasma processing apparatus according to claim 1, wherein the first half-cycle includes a maximum potential value and the second half-cycle includes a minimum potential value, and the control of the second RF power supply is performed in the order from (b) to (a).
  3. An RF system used in a plasma processing apparatus, wherein (a) and (b) are repeated in claim 1.
  4. As an RF system, A first RF generator configured to generate a first RF signal having a first frequency, wherein each cycle is defined by a first frequency including a first half-cycle and a second half-cycle; and A second RF generator configured to generate a second RF signal having a second frequency higher than a first frequency Includes, The above second RF signal is: (a) During the first period, having a first power level for at least a portion of the first half-cycle, and having a zero power level for the second half-cycle, (b) An RF system having a zero power level during a first half-cycle and a second power level during at least a portion of the second half-cycle during a second period.
  5. An RF system in which, in paragraph 4, the first power level is the same as the second power level.
  6. As an RF system used in a plasma processing device, A first RF power supply configured to generate bias RF power having a first frequency, wherein the waveform defined by the first frequency has a plurality of cycles, and each cycle is divided into a first half cycle and a second half cycle at a zero intersection; A second RF power supply configured to generate source RF power having a second frequency higher than the first frequency; and control unit Includes, The above control unit is: (a) During the first period, the second RF power supply is controlled so that the source RF power is generated during the first half-cycle, and (b) In the second period, the source RF power is generated during the second half-cycle and the second RF power supply is controlled so that it is not generated during the first half-cycle. An RF system used in a plasma processing device that is configured.
  7. As an RF system used in a plasma processing device, A first RF power supply configured to generate bias RF power having a first frequency, wherein the waveform defined by the first frequency has a plurality of cycles, and each cycle is divided into a first half cycle and a second half cycle at a zero intersection; A second RF power supply configured to generate source RF power having a second frequency higher than the first frequency; and control unit Includes, The above control unit is: (a) During the first period, the source RF power is generated for at least part of the first half-cycle and is not generated during the second half-cycle, and the second RF power supply is controlled, and (b) In the second period, to control the second RF power supply so that the source RF power is not generated during the first half-cycle, An RF system used in a plasma processing device that is configured.
  8. An RF system used in a plasma processing apparatus, wherein, in claim 7, the first half-cycle includes a maximum potential value and the second half-cycle includes a minimum potential value.
  9. In claim 7, the above (a) and (b) are repeated in the RF system used in a plasma processing apparatus.

Description

Plasma Processing Method and Plasma Processing Device An exemplary embodiment of the present disclosure relates to a plasma treatment method and a plasma treatment apparatus. In the manufacture of electronic devices, plasma processing is performed using a plasma processing apparatus. The plasma processing apparatus is equipped with a chamber and a substrate support. The substrate support includes a lower electrode and is provided within the chamber. In plasma processing, high-frequency power is supplied to excite the gas within the chamber, and plasma is generated from the gas. During the plasma processing, a separate high-frequency power may be supplied to the lower electrode. This separate high-frequency power has a frequency lower than that of the high-frequency power used for plasma generation. In other words, this separate high-frequency power is a bias high-frequency power. Generally, the bias high-frequency power is used to adjust the energy of ions colliding with a substrate placed on a substrate support. The energy of the ions colliding with the substrate increases when a bias high-frequency power with a high power level is supplied to the lower electrode. On the other hand, the energy of the ions colliding with the substrate decreases when a bias high-frequency power with a low power level is supplied to the lower electrode. Patent Document 1 describes a plasma treatment for etching a silicon nitride film. In the technique described in Patent Document 1, the power level of the bias high-frequency power is set to a high level during the etching of the silicon nitride film. Additionally, in the technique described in Patent Document 1, when a state is formed in which the silicon nitride film and the silicon oxide film are exposed together by the etching of the silicon nitride film, the power level of the bias high-frequency power is alternately switched between a high level and a low level. FIG. 1 is a flowchart of a plasma treatment method according to one exemplary embodiment. FIG. 2 is a schematic drawing illustrating a plasma processing apparatus according to one exemplary embodiment. FIG. 3 is a schematic drawing illustrating a plasma processing apparatus according to a separate exemplary embodiment. FIG. 4(a) is a cross-sectional view showing a partially enlarged portion of an example substrate, and FIG. 4(b) and FIG. 4(c) are cross-sectional views showing a partially enlarged portion of an example substrate in a state after each of the multiple processes of method MT1 have been performed. Figure 5 is a timing chart of an example related to method MT1. Figure 6 is a timing chart illustrating an example of a second high-frequency power as continuous high-frequency power. FIG. 7 is a flowchart of a plasma treatment method according to a separate exemplary embodiment. FIG. 8(a) is a cross-sectional view showing a partially enlarged portion of an example substrate, and FIG. 8(b) to FIG. 8(e) are cross-sectional views showing a partially enlarged portion of an example substrate in a state after each of the multiple processes of method MT2 have been performed. FIG. 9 is a flowchart of a plasma treatment method according to another exemplary embodiment. FIG. 10(a) is a cross-sectional view showing a partially enlarged portion of an example substrate, and FIG. 10(b) is a cross-sectional view showing a partially enlarged portion of an example substrate in a state after performing process ST31 of method MT3 shown in FIG. 9. FIG. 11 is a flowchart of a plasma treatment method according to another exemplary embodiment. FIG. 12(a) is a cross-sectional view showing a partially enlarged portion of an example substrate, and FIG. 12(b) to FIG. 12(d) are cross-sectional views showing a partially enlarged portion of an example substrate in a state after each of the multiple processes of the method MT4 shown in FIG. 11 has been performed. FIG. 13 is a flowchart of a plasma treatment method according to another exemplary embodiment. FIG. 14(a) is a cross-sectional view showing a partially enlarged portion of an example substrate, and FIG. 14(b) to FIG. 14(d) are cross-sectional views showing a partially enlarged portion of an example substrate in a state after each of the multiple processes of the method MT5 shown in FIG. 13 has been performed. FIG. 15 is a flowchart of a plasma treatment method according to another exemplary embodiment. FIG. 16(a) is a cross-sectional view showing a partially enlarged portion of an example substrate, and FIG. 16(b) and FIG. 16(c) are cross-sectional views showing a partially enlarged portion of an example substrate in a state after each of the multiple processes of the method MT6 shown in FIG. 15 has been performed. Figure 17 is a timing chart of an example related to the MT6 method. FIG. 18 is a flowchart of a plasma treatment method according to another exemplary embodiment. Figure 19 is a timing chart of an example related to the MT7 method illustrated in Figure 18. FIG. 20(a)