KR-102962917-B1 - Substrate processing method and substrate processing device

Abstract

The first measurement process irradiates P-polarized infrared light onto a substrate at a first incident angle such that the interference signal is reduced compared to the change caused by absorption at the substrate, and measures the transmitted light passing through the substrate or the reflected light. The substrate processing process performs substrate processing on the substrate after the first measurement process. The second measurement process irradiates P-polarized infrared light onto a substrate at a second incident angle such that the interference signal is reduced compared to the change caused by absorption at the substrate, and measures the transmitted light passing through the substrate or the reflected light. The extraction process extracts the difference spectrum between the spectrum of the transmitted light or reflected light measured by the first measurement process and the spectrum of the transmitted light or reflected light measured by the second measurement process.

Inventors

• 오츠키, 유지

Assignees

• 도쿄엘렉트론가부시키가이샤

Dates

Publication Date

20260511

Application Date

20220707

Priority Date

20210721

Claims (20)

1. A first measurement process for irradiating P-polarized infrared light at a first angle of incidence onto a substrate having a pattern including a concave portion, and measuring transmitted light that passes through the substrate or reflected light that reflects it, and After the first measurement process above, a substrate processing process for performing substrate processing on the substrate, and After the above substrate processing process, a second measurement process of irradiating P-polarized infrared light at a second incident angle onto the substrate-processed substrate and measuring the transmitted light that passes through the substrate or the reflected light that reflects it, and An extraction process for extracting a difference spectrum between a spectrum representing the infrared light absorbance for each wavenumber of the transmitted or reflected light measured by the first measurement process and a spectrum representing the infrared light absorbance for each wavenumber of the transmitted or reflected light measured by the second measurement process. having, The first angle of incidence and the second angle of incidence are angles of incidence in which, in the spectrum of transmitted light or reflected light of the irradiated P-polarized infrared light passing through the substrate, the interference signal generated by multiple reflections of infrared light within a pattern including the concave portion is reduced compared to the change caused by absorption in the substrate. Substrate processing method.
2. In paragraph 1, A specific process for specifying the first angle of incidence and the second angle of incidence according to the substrate, further having The first measurement process above irradiates P-polarized infrared light onto the substrate at a specific first incident angle by the specific process, and measures the transmitted light or reflected light of the substrate. The second measurement process described above, after the substrate processing process, irradiates P-polarized infrared light onto the substrate at the second incident angle specified by the specific process, and measures the transmitted light or reflected light of the substrate. Substrate processing method.
3. In paragraph 2, The method further comprises an adjustment measurement process for irradiating P-polarized infrared light onto the substrate at a plurality of incident angles and measuring the transmitted light or reflected light of the substrate at each of the plurality of incident angles. The above specific process specifies the first angle of incidence and the second angle of incidence based on the spectrum of transmitted light or reflected light measured at each of the plurality of angles of incidence by the above adjustment measurement process. Substrate processing method.
4. In paragraph 3, The above specific process determines the angle of incidence at which the interference signal is smallest from the spectrum of transmitted light or reflected light measured at each of the plurality of angles of incidence by the adjustment measurement process, and determines the first angle of incidence and the second angle of incidence from a predetermined angle range based on the determined angle of incidence. Substrate processing method.
5. In paragraph 2, The above specific process calculates a Brewster angle by calculation from the pattern portion formed on the substrate and the lower refractive index of said pattern portion, and determines the first angle of incidence and the second angle of incidence from a predetermined angle range based on the calculated Brewster angle. Substrate processing method.
6. In paragraph 2, The above specific process specifies the first angle of incidence and the second angle of incidence as the same angle. Substrate processing method.
7. In paragraph 3, The above adjustment measurement process irradiates P-polarized infrared light from a plurality of incident angles onto the substrate before substrate processing and the substrate after substrate processing, and measures the transmitted light or reflected light of the substrate at the plurality of incident angles. The above specific process comprises determining the angle of incidence at which the interference signal is minimized for the substrate before substrate treatment and the substrate after substrate treatment, respectively, from the spectra of transmitted light or reflected light measured at the plurality of angles of incidence for the substrate before substrate treatment and the substrate after substrate treatment, respectively, and determining the first angle of incidence and the second angle of incidence from the angle of incidence at which the interference signal is minimized for the substrate before substrate treatment and the angle of incidence at which the interference signal is minimized for the substrate after substrate treatment. Substrate processing method.
8. In Paragraph 7, The above specific process specifies the first angle of incidence from a predetermined angle range based on the angle of incidence at which the interference signal is smallest on the substrate before substrate processing, and specifies the second angle of incidence from a predetermined angle range based on the angle of incidence at which the interference signal is smallest on the substrate after substrate processing. Substrate processing method.
9. In Paragraph 7, The above specific process specifies the first angle of incidence and the second angle of incidence as the same angle from a predetermined angle range based on the intermediate angle between the angle of incidence at which the interference signal is smallest on the substrate before substrate processing and the angle of incidence at which the interference signal is smallest on the substrate after substrate processing. Substrate processing method.
10. In paragraph 1, The first angle of incidence and the second angle of incidence are angles of incidence within a predetermined angle range based on the Brewster angle of the irradiated P-polarized infrared light with respect to the substrate. Substrate processing method.
11. In paragraph 1, The first angle of incidence and the second angle of incidence are set as the same angle of incidence. Substrate processing method.
12. In paragraph 1, The above substrate is such that the depth of the concave portion of the pattern is 700 nm or more, Substrate processing method.
13. In paragraph 1, The above extraction process extracts a difference spectrum representing infrared light absorbance for each wavenumber by subtracting the spectrum of transmitted light or reflected light measured by the first measurement process from the spectrum of transmitted light or reflected light measured by the second measurement process. Substrate processing method.
14. In paragraph 1, A display process having a display process that indicates the state of the substrate processed by the substrate processing process based on the difference spectrum extracted by the above extraction process. Substrate processing method.
15. In paragraph 1, A control process comprising controlling process parameters of the substrate processing process based on the difference spectrum extracted by the above extraction process, Substrate processing method.
16. In paragraph 15, The above control process controls process parameters of the substrate processing process based on a comparison of difference spectra between substrates from the difference spectra of a plurality of substrates. Substrate processing method.
17. In paragraph 15, The first measurement process and the second measurement process are each performed at multiple locations within the surface of the substrate, and The above control process extracts a difference spectrum between the spectrum of transmitted light or reflected light measured by the first measurement process and the spectrum of transmitted light or reflected light measured by the second measurement process at each of the plurality of locations, and controls process parameters based on the extracted difference spectrum of the plurality of locations. Substrate processing method.
18. In Paragraph 17, The above substrate processing process is a process of forming a film on the above substrate, and The above control process obtains the film thickness distribution and film quality of the film deposited on the substrate from the difference spectra of the plurality of locations, and controls process parameters to obtain a predetermined film quality while homogenizing the film thickness distribution. Substrate processing method.
19. In Paragraph 17, The above substrate processing process is a process of etching the above substrate, and The above control process obtains the volume distribution and composition of the etched film from the difference spectra of the plurality of locations, and controls process parameters so that a predetermined film is etched while homogenizing the distribution of the etching amount, Substrate processing method.
20. In paragraph 1, The above substrate processing process involves regularly performing substrate processing on a substrate under the same processing conditions, and A diagnostic process for diagnosing the condition of an apparatus performing a substrate processing process based on a comparison of difference spectra between substrates from the difference spectra of a plurality of substrates processed under the same processing conditions. A substrate processing method having additional

Description

Substrate processing method and substrate processing device The present disclosure relates to a substrate processing method and a substrate processing apparatus. Patent Document 1 discloses a technology for performing film deposition by stacking a substrate for film deposition and a substrate for a monitor, analyzing the thin film formed on the substrate for the monitor by infrared spectroscopy, and optimizing the film quality of the film formed on the substrate for film deposition based on the analysis value. FIG. 1 is a schematic cross-sectional view illustrating an example of a tabernacle device according to an embodiment. FIG. 2 is a drawing illustrating a state in which a substrate is raised from a loading platform in a film forming apparatus according to an embodiment. FIG. 3 is a schematic diagram illustrating another example of a tabernacle device according to an embodiment. Figure 4 is a diagram illustrating a film formation by plasma according to an embodiment. FIG. 5 is a drawing illustrating an example of a substrate having a film formed thereon according to an embodiment. Figure 6 is a diagram illustrating conventional FT-IR analysis. Figure 7a is a diagram explaining the cause of the generation of interference signals. Figure 7b is a diagram explaining the cause of the interference signal generation. Figure 8 is a diagram illustrating an example of the analysis results. Figure 9 is a diagram illustrating the angle of incidence of infrared light on a substrate and the control of the polarization of infrared light. FIG. 10 is a schematic diagram illustrating a substrate according to an embodiment. Figure 11 is a diagram illustrating an example of the change in the angle of incidence and transmittance of infrared light on a substrate. FIG. 12 is a flowchart illustrating an example of the flow of a specific method regarding an embodiment. FIG. 13 is a flowchart illustrating an example of the flow of a substrate processing method according to an embodiment. FIG. 14 is a drawing illustrating differential data regarding an embodiment. Figure 15a is a diagram illustrating an example of the spectrum of a membrane. FIG. 15b is a diagram illustrating an example of the result of extracting an interference signal. FIG. 15c is a diagram illustrating an example of the dependence of interference intensity on the angle of incidence. Figure 16 is a diagram illustrating an example of the spectrum of a tabulated membrane. Figure 17 is a diagram illustrating an example of the spectrum of a tabulated membrane. FIG. 18 is a schematic cross-sectional view illustrating another example of a tabernacle device according to an embodiment. FIG. 19 is a schematic diagram illustrating another example of a tabernacle device according to an embodiment. FIG. 20 is a drawing illustrating an example of a substrate processing process according to an embodiment. Figure 21 is a diagram illustrating an example of a spectrum. Figure 22 is a diagram illustrating an example of a difference spectrum. FIG. 23 is a drawing illustrating an example of a substrate processing process according to an embodiment. Figure 24 is a diagram illustrating an example of a difference spectrum. FIG. 25 is a drawing illustrating an example of a substrate processing process according to an embodiment. Figure 26 is a diagram illustrating an example of a difference spectrum. FIG. 27 is a drawing illustrating an example of a substrate processing process according to an embodiment. Figure 28 is a diagram illustrating an example of a difference spectrum. Hereinafter, embodiments of the substrate processing method and substrate processing apparatus disclosed herein will be described in detail with reference to the drawings. Furthermore, the substrate processing method and substrate processing apparatus disclosed herein are not limited by these embodiments. In the manufacture of semiconductor devices, a film is deposited on a substrate, such as a semiconductor wafer, formed with a pattern including concave portions, using a film deposition device. The film deposition device places the substrate within a chamber (processing vessel) at a predetermined vacuum level, supplies a film deposition source gas into the chamber, and generates plasma to perform film deposition on the substrate. Examples of known film deposition technologies include CVD (Chemical Vapor Deposition) and ALD (Atomic Layer Deposition). However, as the miniaturization of patterns formed on substrates progresses, film quality tends to deteriorate at the sidewalls and bottoms of concave areas within the pattern during plasma-based film deposition. Infrared spectroscopy is often used to analyze whether the film formed on the substrate meets the desired composition and quality. Specifically, film deposition is performed on a flat monitor substrate separately from the actual substrate used to manufacture semiconductor devices, and the state of the film deposited on the actual substrate is inferred by an