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KR-102962963-B1 - Apparatus for treating Substrate and Method for treating substrate using the same

KR102962963B1KR 102962963 B1KR102962963 B1KR 102962963B1KR-102962963-B1

Abstract

The technical concept of the present invention is a process chamber configured to perform plasma treatment; A substrate support located at the bottom of the process chamber and configured to support a substrate; A substrate processing apparatus is provided comprising: a shower head positioned at the top of the process chamber and configured to supply process gas for plasma processing toward the substrate; and a baffle arranged to surround the substrate support, wherein the substrate support functions as a first electrode for generating plasma, the shower head and the baffle function as second electrodes for generating plasma, the baffle is configured to have a variable height, and the area of the second electrode varies as the height of the baffle varies.

Inventors

  • 손지원
  • 강성길
  • 도강민
  • 김영선
  • 김영후
  • 안상진

Assignees

  • 삼성전자주식회사

Dates

Publication Date
20260508
Application Date
20220908

Claims (10)

  1. A process chamber configured to perform plasma treatment; A substrate support located at the bottom of the process chamber and configured to support a substrate; A shower head located at the top of the process chamber and configured to supply process gas for plasma treatment toward the substrate; and A baffle positioned to surround the above-mentioned substrate support; Includes, A substrate processing apparatus in which the above substrate support functions as a first electrode for generating plasma, the shower head and the baffle function as a second electrode for generating plasma, the baffle is configured to have a variable height, and the area of the second electrode varies as the height of the baffle varies.
  2. In Article 1, A substrate processing device to which RF power is applied to the above substrate support.
  3. In Article 1, A substrate processing device comprising a lifting device configured to raise and lower the above baffle in a vertical direction.
  4. In Article 1, A substrate processing device in which the maximum height of the above baffle is the same as the height of the substrate supported by the above substrate support.
  5. In Article 1, A substrate processing device in which the shower head and the baffle are ground electrodes.
  6. In Article 1, A substrate processing device further comprising a liner surrounding the side wall of the process chamber, wherein the liner functions as a second electrode.
  7. In Article 6, The above liner is a substrate processing device that is a ground electrode.
  8. A step of providing a substrate having a patterned structure formed thereon onto a substrate support into a process chamber; A first adjustment step for adjusting the height of a baffle within the process chamber; A step of depositing a sacrificial film on the patterned structure above; A second adjustment step for adjusting the height of the above baffle; and A step of etching the substrate using the sacrificial film; Includes, A substrate processing method in which the substrate support functions as a first electrode for generating plasma and the baffle functions as a second electrode for generating plasma, and the area of the second electrode varies as the height of the baffle varies.
  9. In Article 8, A substrate processing method in which the first control step, the deposition step, the second control step, and the etching step are performed multiple times.
  10. In Article 9, A substrate processing method in which the height of the baffle in each of the first adjustment steps performed multiple times is different from each other.

Description

Apparatus for treating Substrate and Method for treating substrate using the same The technical concept of the present invention relates to a substrate processing apparatus and a substrate processing method using the same. More specifically, it relates to a substrate processing apparatus comprising a baffle configured to move in a vertical direction and a substrate processing method using the same. Recently, with the miniaturization and high integration of semiconductor devices, the critical dimension (CD) of the semiconductor device pattern is gradually decreasing, and the aspect ratio of the pattern is gradually increasing. Accordingly, the difficulty of the plasma etching process for forming the semiconductor device pattern is increasing. In order to overcome the increased difficulty of the process and realize a pattern with a high aspect ratio, a method has been proposed to repeatedly perform the process of depositing a sacrificial film on a substrate and etching the substrate using the sacrificial film. FIG. 1 is a cross-sectional view showing a substrate processing apparatus according to an exemplary embodiment of the present invention. Figures 2a and 2b are drawings showing the plasma region and the sheath region according to the position of the baffle. Figure 3 is a cross-sectional view showing a sacrificial film deposited on a pattern according to the position of the baffle. Figure 4 is a cross-sectional view showing the pattern after etching according to the position of the baffle. Figure 5 is a diagram showing the ratio of the vertical length to the horizontal length of the sacrificial film deposited on the pattern and a TEM image according to the position of the baffle. FIG. 6 is a flowchart illustrating a substrate processing method according to an exemplary embodiment of the present invention. FIGS. 7a to 7e are cross-sectional views illustrating each step of a substrate processing method according to an exemplary embodiment of the present invention. Hereinafter, embodiments of the technical concept of the present invention will be described in detail with reference to the attached drawings. Identical components in the drawings are denoted by the same reference numerals, and redundant descriptions thereof are omitted. FIG. 1 is a cross-sectional view showing a substrate processing apparatus (100) according to an exemplary embodiment of the present invention. FIG. 2a and FIG. 2b are drawings showing a plasma region (PR) and a sheath region (SR) according to the position of a baffle (130). Specifically, FIG. 2a is a drawing showing a plasma region (PR) and a sheath region (SR) created when the height of the baffle (130) is lower than the height of the substrate (WF), and FIG. 2b is a drawing showing a plasma region (PR) and a sheath region (SR) created when the height of the baffle (130) is substantially the same as the height of the substrate (WF). Referring to FIGS. 1, FIGS. 2a and FIGS. 2b, the substrate processing device (100) may include a process chamber (110), a substrate support (120), a baffle (130), a liner (140), and a shower head (150). A substrate processing device (100) may be configured to perform substrate (WF) processing using plasma. The substrate processing device (100) may be configured to perform, for example, a plasma etching process or plasma-enhanced chemical vapor deposition. The substrate processing device (100) may also be configured to perform, for example, both a plasma etching process and plasma-enhanced chemical vapor deposition. The substrate (WF) may include a Group IV semiconductor such as silicon (Si) or germanium (Ge), a Group IV-IV compound semiconductor such as silicon-germanium (SiGe) or silicon carbide (SiC), or a Group III-V compound semiconductor such as gallium arsenide (GaAs), indium arsenide (InAs), or indium phosphide (InP). In an exemplary embodiment, the substrate (WF) may have a silicon-on-insulator (SOI) structure. In an exemplary embodiment, the substrate (WF) may include a buried oxide layer. The substrate (WF) may include a conductive region, for example, an impurity-doped well. The substrate (WF) may have various device isolation structures, such as a shallow trench isolation (STI) structure, that separate the doped wells from each other. The process chamber (110) may include a metal, for example, aluminum. The process chamber (110) may have a cylindrical shape, for example. The process chamber (110) may provide a processing space (S) where plasma-based processing of a substrate (WF) is performed. The process chamber (110) may isolate the processing space (S) from the outside, and accordingly, process parameters such as pressure, temperature, and plasma density may be controlled. The process chamber (110) may provide a plasma region (PR) and a sheath region (SR) surrounding the plasma region (PR). Specifically, the plasma region (PR) is provided within a certain radius from the center of the process chamber (110), and the sheath region (SR) h