KR-102962966-B1 - ARRANGING BOND PADS TO REDUCE IMPACT ON PASSIVE DEVICES

Abstract

The method comprises the steps of: forming a functional circuit on a semiconductor substrate of a device die—wherein the functional circuit is located within a functional circuit region of the device die—; forming a passive device on the semiconductor substrate—wherein the passive device is located within a passive device region of the device die—; forming a first plurality of bond pads within the functional circuit region and on the surface of the device die—wherein the first plurality of bond pads have a first pattern density—; and forming a second plurality of bond pads within the passive device region and on the surface of the device die. The second plurality of bond pads have a second pattern density lower than the first pattern density.

Inventors

• 팅 쿠오-치앙
• 예 숭-펭
• 숭 타 하오
• 우 가오-롱
• 푸 신-지운

Assignees

• 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드

Dates

Publication Date

20260508

Application Date

20240912

Priority Date

20240103

Claims (10)

1. In terms of method, Step of forming a functional circuit on a semiconductor substrate of a device die - said functional circuit is located within a functional circuit area of said device die - ; Step of forming a passive device on the semiconductor substrate - the passive device is located within the passive device area of the device die - ; A step of forming a first plurality of bond pads within the above-mentioned functional circuit area and on the surface of the device die - the first plurality of bond pads have a first pattern density - ; A step of forming a second plurality of bond pads within the above passive device area and on the above surface of the device die - the second plurality of bond pads have a second pattern density lower than the first pattern density - ; and A step of forming a third plurality of bond pads within a transition zone and on the surface of the device die - the transition zone is between the passive device zone and the functional circuit zone, and the third plurality of bond pads have a third pattern density lower than the first pattern density - A method including
2. In terms of structures, Device Die Includes, The above device die is, Functional circuit area; A first plurality of bond pads within the above-mentioned functional circuit area - the above-mentioned functional circuit area has bond pads of a first pattern density - ; A functional circuit located within the above functional circuit area and below the first plurality of bond pads; Manual device area; A manual device within the above manual device area; A second plurality of bond pads located within the above-mentioned passive device area and on the above-mentioned passive device - the above-mentioned passive device area has bond pads of a second pattern density, and the second pattern density is lower than the first pattern density - ; Transition zone between the above functional circuit zone and the above passive device zone; and Third plurality of bond pads within the above transition zone - the above transition zone has bond pads of a third pattern density, the third pattern density being lower than the first pattern density and greater than the second pattern density - A structure that includes
3. In paragraph 2, The above-mentioned second plurality of bond pads is a structure comprising electrically floating bond pads.
4. In paragraph 2, The above third plurality of bond pads are electrically floating structures.
5. In paragraph 2, A structure in which the above transition zone includes a plurality of sub-zones, and among the plurality of sub-zones, the first sub-zones closer to the passive device zone have lower pattern densities than each second sub-zone closer to the functional circuit zone among the plurality of sub-zones.
6. In paragraph 2, A structure in which there is no active device within the above transition zone.
7. In paragraph 2, Package component bonded to the above device die A structure further comprising, wherein the first plurality of bond pads, the second plurality of bond pads, and the third plurality of bond pads are in physical contact with the package component and are bonded to the package component.
8. In terms of structures, semiconductor substrate; A plurality of metal layers on the semiconductor substrate above; Inductor on the plurality of metal layers above; A first plurality of bond pads - a first chip region occupied by the first plurality of bond pads overlaps with the inductor, and the first plurality of bond pads have a first pitch - ; A second plurality of bond pads within a second chip region surrounding the first plurality of bond pads - the second plurality of bond pads have a second pitch smaller than the first pitch - ; and Third plurality of bond pads within a third chip region surrounding the second plurality of bond pads - the third plurality of bond pads have a third pitch smaller than the second pitch - A structure including
9. In paragraph 8, A structure in which the first plurality of bond pads have a first pattern density, the second plurality of bond pads have a second pattern density greater than the first pattern density, and the third plurality of bond pads have a third pattern density greater than the second pattern density.
10. In paragraph 8, A structure in which the first plurality of bond pads have a first transverse dimension, the second plurality of bond pads have a second transverse dimension larger than the first transverse dimension, and the third plurality of bond pads have a third transverse dimension larger than the second transverse dimension.

Description

Arranging bond pads to reduce impact on passive devices This application claims the benefit of U.S. Patent Application No. 63/584,561, provisional filed on September 22, 2023, under the title “SEMICONDUCTOR DIE WITH OPTIMIZED ARRANGEMENT OF BOND METALS”, the full text of which is incorporated herein by reference. A semiconductor chip may include active devices and passive devices, such as transistors, capacitors, and inductors. In a semiconductor chip, transistors are formed on the surface of a semiconductor substrate of the semiconductor chip. Passive devices may be formed on the semiconductor chip. Bond pads may be formed on passive and active devices and may be used to bond to other package components, such as the semiconductor chip, interposer, and package substrate. The embodiments of the present disclosure are best understood from the following detailed description when read together with the accompanying drawings. In accordance with standard practice in the industry, it should be noted that various features are not drawn to actual scale. In practice, the dimensions of various features may be increased or decreased at will for clarity of description. FIG. 1 illustrates a cross-sectional view of a device die including a passive device and a bond pad above it according to some embodiments. FIG. 2 illustrates a plan view of a device die including a passive device and a bond pad on top according to some embodiments. FIG. 3 illustrates a plan view of a passive device area, a transition area, and a functional circuit area according to some embodiments. FIG. 4 illustrates a plan view of a passive device area according to some embodiments. FIG. 5 illustrates a plan view of a transition region having a gradient pattern density according to some embodiments. FIG. 6 illustrates a cross-sectional view of a portion of a device die including a passive device, a transition zone, a functional circuit zone, and a bond pad above, according to some embodiments. FIG. 7 illustrates a plurality of distribution patterns of bond pads in a passive device area according to some embodiments. FIGS. 8 and 9 illustrate possible planar shapes of bond pads in a passive device area according to some embodiments. FIG. 10 illustrates a plurality of distribution patterns of cluster bond pads in a passive device area according to some embodiments. FIG. 11 illustrates a plurality of distribution patterns of bond pads in a transition zone according to some embodiments. FIGS. 12 and FIGS. 13 illustrate cross-sectional shapes of redistribution lines according to some embodiments. FIG. 14 illustrates a cross-sectional view of two bonded device dies according to some embodiments. FIGS. 15 to 26 illustrate cross-sectional views of intermediate stages in the formation of the uppermost structure of a device die according to some embodiments. FIGS. 27 to 35 illustrate cross-sectional views of some structures adopting embodiments according to some embodiments. FIG. 36 illustrates a process flow for forming a top surface structure according to some embodiments. The disclosure below provides many different embodiments or examples that embody various features of the present invention. To simplify the disclosure, specific examples of components and devices are described below. Of course, these are merely examples and are not intended to be limiting. For example, in the following detailed description, the formation of the first feature on or above the second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features so that the first and second features do not come into direct contact. Additionally, the disclosure may repeat reference numbers and/or letters in various examples. Such repetition is for the purpose of simplification and clarification, and such repetition itself does not affect the relationship between the various embodiments and/or configurations disclosed. Additionally, spatial relative terms such as "below," "bottom," "lower," "above," and "above" may be used herein for ease of explanation to describe the relationship between one element or feature and another element(s) or feature(s) shown in the drawings. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation shown in the drawings. The device may be oriented differently (rotated 90° or rotated to a different orientation), and accordingly, the spatial relative terms used herein may be interpreted in the same way. A device die comprising an optimized arrangement of passive devices and bond pads, and a method for forming the same are provided. According to some embodiments, a passive device, such as an inductor, is formed within a passive device zone. A functional circuit comprising an active device is formed within a functional circuit zone. A transiti