KR-102962977-B1 - Photoelectric conversion element and imaging device

KR102962977B1KR 102962977 B1KR102962977 B1KR 102962977B1KR-102962977-B1

Abstract

A photoelectric conversion element of one embodiment of the present disclosure comprises a first electrode, a second electrode disposed opposite to the first electrode, and an organic photoelectric conversion layer comprising a first organic semiconductor material disposed between the first electrode and the second electrode, a second organic semiconductor material having a Highest Occupied Molecular Orbital (HOMO) level that is deeper than the Lowest Unoccupied Molecular Orbital (LUMO) level of the first organic semiconductor material and has a difference from the LUMO level of the first organic semiconductor material of 1.0 eV or more and 2.0 eV or less, and a third organic semiconductor material having crystallinity and having a line absorption coefficient of 10,000 cm⁻¹ or less in the visible light region and a light absorption end wavelength of 550 nm or less.

Inventors

가이 아유미
사이토 요스케

Assignees

소니그룹주식회사

Dates

Publication Date: 20260511
Application Date: 20210716
Priority Date: 20200731

Claims (13)

The first electrode and, A second electrode positioned opposite to the first electrode, and An organic photoelectric conversion layer provided between the first electrode and the second electrode, comprising: a first organic semiconductor material; a second organic semiconductor material having a Highest Occupied Molecular Orbital (HOMO) level that is deeper than the Lowest Unoccupied Molecular Orbital (LUMO) level of the first organic semiconductor material and has a difference from the LUMO level of the first organic semiconductor material of 1.0 eV or more and 2.0 eV or less; and a third organic semiconductor material having crystallinity, a line absorption coefficient in the visible light region of 10,000 cm⁻¹ or less, and a light absorption end wavelength of 550 nm or less. Equipped with, The above second organic semiconductor material is a donor-acceptor type dye material, a photoelectric conversion device.
In paragraph 1, The above-mentioned first organic semiconductor material, the above-mentioned second organic semiconductor material, and the above-mentioned third organic semiconductor material are low-molecular-weight compounds with a molecular weight of 2000 or less, in a photoelectric conversion device.
In paragraph 1, A photoelectric conversion device in which the first organic semiconductor material is an electron transport material, the second organic semiconductor material is a dye material, and the third organic semiconductor material is a hole transport material.
In paragraph 1, The above-mentioned first organic semiconductor material is a fullerene or a derivative thereof, a photoelectric conversion device.
delete
In paragraph 1, The above second organic semiconductor material is a photoelectric conversion device having maximum absorption in a wavelength band of 380 nm or more and 750 nm or less.
In paragraph 1, The above-mentioned first electrode comprises a plurality of electrodes independent of each other, forming a photoelectric conversion device.
In Paragraph 7, The first electrode is a photoelectric conversion device having a charge reading electrode and a charge accumulation electrode as the plurality of electrodes.
In Paragraph 7, A photoelectric conversion device in which a voltage is applied to each of the above plurality of electrodes individually.
A plurality of pixels, each having one or more photoelectric conversion elements, is provided, and The above photoelectric conversion element is, The first electrode and, A second electrode positioned opposite to the first electrode, and An organic photoelectric conversion layer provided between the first electrode and the second electrode, comprising: a first organic semiconductor material; a second organic semiconductor material having a Highest Occupied Molecular Orbital (HOMO) level that is deeper than the Lowest Unoccupied Molecular Orbital (LUMO) level of the first organic semiconductor material and has a difference from the LUMO level of the first organic semiconductor material of 1.0 eV or more and 2.0 eV or less; and a third organic semiconductor material having crystallinity, a line absorption coefficient in the visible light region of 10,000 cm⁻¹ or less, and a light absorption end wavelength of 550 nm or less. having, An imaging device in which the second organic semiconductor material is a donor-acceptor type dye material.
In Paragraph 10, An imaging device having, in each pixel, one or more organic photoelectric converters and one or more inorganic photoelectric converters that perform photoelectric conversion in a wavelength range different from that of the organic photoelectric converters stacked thereon.
In Paragraph 11, The above-mentioned inorganic photoelectric converter is formed by being embedded in a semiconductor substrate, and The above organic photoelectric converter is an imaging device formed on the first plane side of the semiconductor substrate.
In Paragraph 12, An imaging device having a semiconductor substrate having a second surface opposite to the first surface, and a multilayer wiring layer formed on the second surface side.

Description

Photoelectric conversion element and imaging device The present disclosure relates to a photoelectric conversion element using, for example, an organic material and an imaging device equipped with the same. For example, Patent Document 1 discloses a photoelectric conversion device that improves spectroscopic characteristics, responsiveness, and EQE by providing a photoelectric conversion layer between a pair of opposing electrodes, comprising three types of organic semiconductor materials: a first organic semiconductor material of fullerene or its derivative, a second organic semiconductor material of subphthalocyanine or its derivative, and a third organic semiconductor material of a quinacridone derivative, a trialylamine derivative, or a benzothienobenzothiophene derivative. FIG. 1 is a schematic cross-sectional view showing an example of the configuration of a photoelectric conversion element according to a first embodiment of the present disclosure. Figure 2 is a diagram showing an example of the energy levels of an organic material included in the photoelectric conversion layer shown in Figure 1. Figure 3 is a planar schematic diagram showing the configuration of a unit pixel of the imaging element illustrated in Figure 1. Figure 4 is a cross-sectional schematic diagram for explaining the method of manufacturing the imaging element illustrated in Figure 1. Figure 5 is a cross-sectional schematic diagram showing the process following Figure 4. FIG. 6 is a schematic cross-sectional view showing an example of the configuration of a photoelectric conversion element according to a second embodiment of the present disclosure. FIG. 7 is a schematic cross-sectional view showing an example of the configuration of a photoelectric conversion element according to a third embodiment of the present disclosure. FIG. 8 is a schematic cross-sectional view showing an example of the configuration of a photoelectric conversion element according to a fourth embodiment of the present disclosure. Figure 9 is an equivalent circuit diagram of the photoelectric conversion element shown in Figure 8. FIG. 10 is a schematic diagram showing the arrangement of transistors constituting the lower electrode and control unit of the photoelectric conversion element illustrated in FIG. 8. FIG. 11 is a timing diagram showing an example of operation of the photoelectric conversion element illustrated in FIG. 8. FIG. 12a is a schematic cross-sectional view showing an example of the configuration of a photoelectric conversion element according to the fifth embodiment of the present disclosure. FIG. 12b is a planar schematic diagram showing an example of a pixel configuration of an imaging device having a photoelectric conversion element as illustrated in FIG. 12a. FIG. 13 is a block diagram showing the overall configuration of an imaging device equipped with a photoelectric conversion element as illustrated in FIG. 1 et al. FIG. 14 is a functional block diagram showing an example of an electronic device using the imaging device illustrated in FIG. 13. Figure 15 is a diagram showing an example of the schematic configuration of an endoscopic surgical system. FIG. 16 is a block diagram showing an example of the functional configuration of a camera head and a CCU. FIG. 17 is a block diagram showing an example of the schematic configuration of a vehicle control system. FIG. 18 is an explanatory diagram showing an example of the installation locations of the external information detection unit and the imaging unit. Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. The following description is one embodiment of the present disclosure, and the present disclosure is not limited to the following embodiments. Furthermore, the present disclosure is not limited to the arrangement, dimensions, dimensional ratios, etc., of each component shown in each drawing. Also, the order of description is as follows. 1. First embodiment (Example of a photoelectric conversion device having a photoelectric conversion layer comprising a first organic semiconductor material, a second organic semiconductor material having a predetermined HOMO level, and a third organic semiconductor material having crystallinity) 1-1. Composition of Photovoltaic Conversion Devices 1-2. Method for manufacturing a photoelectric conversion device 1-3. Action and Effects 2. Second embodiment (example of a photoelectric conversion device having two stacked organic photoelectric conversion units) 3. Third embodiment (example of a photoelectric conversion device having three stacked organic photoelectric conversion units) 4. Fourth embodiment (example of a photoelectric conversion device having a lower electrode including a plurality of electrodes) 5. Fifth embodiment (Example of a photoelectric conversion element that performs spectral analysis of an inorganic photoelectric conversion unit using a color filter) 6. Application Examples