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KR-102963058-B1 - POLISHING PAD FOR CHEMICAL MECHANICAL POLISHING, CHEMICHAL MECHANICAL POLISHING APPARATUS INCLUDING THE SAME, AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME

KR102963058B1KR 102963058 B1KR102963058 B1KR 102963058B1KR-102963058-B1

Abstract

A temperature-sensitive polishing pad for chemical mechanical polishing, a chemical mechanical polishing apparatus including the same, and a method for manufacturing a semiconductor device using the same are provided. The polishing pad for chemical mechanical polishing comprises a polymer matrix and a temperature-sensitive agent dispersed within the polymer matrix in an amount of 1 volume% to 40 volume%, wherein the temperature-sensitive agent comprises a two-dimensional sheet material having a thermal conductivity of 1 W/(m·K) or more.

Inventors

  • 변예린
  • 김인권
  • 김보연
  • 김상균
  • 윤보언
  • 이효산
  • 황병근

Assignees

  • 삼성전자주식회사

Dates

Publication Date
20260508
Application Date
20211230

Claims (10)

  1. polymer matrix; and It comprises 1 volume% to 40 volume% of a temperature-sensitive agent dispersed within the polymer matrix, A polishing pad for chemical mechanical polishing, wherein the temperature-sensitive agent is a two-dimensional sheet material having a thermal conductivity of 1 W/(m·K) or more.
  2. In Article 1, The above two-dimensional sheet material comprises at least one of graphene, graphene oxide, hexagonal boron nitride, graphitic carbon nitride, amorphous vanadium pentoxide, black phosphorus, silicene, and arsenene, forming a polishing pad for chemical mechanical polishing.
  3. In Paragraph 2, The above two-dimensional sheet material comprises at least one of graphene and hexagonal boron nitride, forming a polishing pad for chemical mechanical polishing.
  4. In Article 1, A polishing pad for chemical mechanical polishing, wherein the polymer matrix comprises at least one of polyurethane, polyolefin, and polycarbonate.
  5. In Paragraph 4, The above polymer matrix is a polishing pad for chemical mechanical polishing, comprising polyurethane.
  6. In Article 1, A polishing pad for chemical mechanical polishing having a thermal conductivity of 0.1 W/(m·K) or higher.
  7. In Article 1, A polishing pad for chemical mechanical polishing, which is a polishing pad for polishing metal films.
  8. polymer matrix; and A temperature-sensitive agent dispersed within the polymer matrix, comprising: The above temperature-sensitive agent is at least one of graphene, graphene oxide, hexagonal boron nitride, graphitic carbon nitride, amorphous vanadium pentoxide, black phosphorus, silicene, and arsenene, and A polishing pad for chemical mechanical polishing having a thermal conductivity of 0.1 W/(m·K) or higher.
  9. Rotatable platen; A polishing pad placed on the above platen; A polishing head assembly that provides a wafer on the polishing pad above; A slurry supply unit that provides a chemical mechanical polishing slurry on the polishing pad; and It includes a temperature controller for controlling the polishing temperature of the wafer, The polishing pad comprises a polymer matrix and a temperature-sensitive agent dispersed within the polymer matrix, and A chemical mechanical polishing device in which the temperature-sensitive agent is a two-dimensional sheet material having a thermal conductivity of 1 W/(m·K) or more.
  10. In Article 9, The above wafer comprises a semiconductor substrate and a metal film on the semiconductor substrate, and The above polishing pad is a chemical mechanical polishing device that performs a polishing process on the metal film.

Description

Polishing pad for chemical mechanical polishing, chemical mechanical polishing apparatus including the same, and method for fabricating a semiconductor device using the same The present invention relates to a polishing pad for chemical mechanical polishing, a chemical mechanical polishing apparatus including the same, and a method for manufacturing a semiconductor device using the same. More specifically, the present invention relates to a temperature-sensitive polishing pad for chemical mechanical polishing, a chemical mechanical polishing apparatus including the same, and a method for manufacturing a semiconductor device using the same. In the manufacturing process of semiconductor devices, the Chemical Mechanical Polishing (CMP) process is widely used as a planarization technique to eliminate step differences between films formed on a substrate. The Chemical Mechanical Polishing process can efficiently planarize films formed on a substrate by injecting a polishing slurry containing polishing particles between the substrate and the polishing pad and frictionally rubbing the substrate and the polishing pad. Meanwhile, in chemical mechanical polishing processes based on chemical reactions, the polishing temperature is a cause of changes in the polishing characteristics of the process. Therefore, methods to efficiently control the polishing temperature to achieve the required polishing characteristics are being studied. Figure 1 is a graph illustrating the change in thermal conductivity of a polishing pad according to the amount of h-BN added. Figure 2 is a graph illustrating the change in thermal conductivity of a polishing pad according to the amount of graphene added. FIG. 3 is a schematic perspective view illustrating a chemical mechanical polishing apparatus according to some embodiments. FIGS. 4 to 8 are intermediate step drawings for explaining a method of manufacturing a semiconductor device according to some embodiments. In the following, a polishing pad for chemical mechanical polishing according to exemplary embodiments is described. A polishing pad for chemical mechanical polishing according to some embodiments comprises a polymer matrix and a temperature-sensitive agent. The above polymer matrix may include a polymer having excellent strength, flexibility, and durability as a material serving as the base of the above chemical mechanical polishing pad. For example, the above polymer matrix may include at least one of polyurethane, polyester, polyether, epoxy, polyimide, polycarbonate, polyethylene, polypropylene, latex, nitrile-butadiene rubber (NBR), isoprene rubber, and combinations thereof, but is not limited thereto. Preferably, the polymer matrix may comprise at least one of polyurethane; polyolefins such as polyethylene and polypropylene; polycarbonate and combinations thereof. For example, the polymer matrix may comprise polyurethane. The temperature-sensitive agent may be dispersed within the polymer matrix. The temperature-sensitive agent may improve the thermo-sensitivity of the chemical mechanical polishing pad. The temperature-sensitive agent may include a two-dimensional sheet (2D sheet) material having a relatively high thermal conductivity compared to the polymer matrix. In some embodiments, the thermal conductivity of the temperature-sensitive agent may be about 1 W/(m·K) or higher. For example, the thermal conductivity of the temperature-sensitive agent may be from about 1 W/(m·K) to about 10,000 W/(m·K). For example, the temperature-sensitive agent may include at least one of graphite, graphene, graphene oxide (GO), hexagonal boron nitride (h - BN), graphitic carbon nitride (g-CN), amorphous vanadium pentoxide ( aV₂O₅ ), black phosphorus, silicene, arsenene, and combinations thereof, but is not limited thereto. Preferably, the temperature-sensitive agent may comprise at least one of graphene, graphene oxide (GO), hexagonal boron nitride (h-BN), graphitic carbon nitride (g- CN ), amorphous vanadium pentoxide ( aV₂O₅ ), black phosphorus, silicene, and arsenene. For example, the temperature-sensitive agent may comprise hexagonal boron nitride (h-BN). As another example, the temperature-sensitive agent may comprise graphene. The temperature-sensitive agent may be included in an amount of about 0.1 volume% to about 50 volume% with respect to 100 volume% of the polishing pad for chemical mechanical polishing. When the temperature-sensitive agent is included in an amount of about 0.1 volume% or more, the temperature sensitivity of the polishing pad for chemical mechanical polishing is improved, which can shorten the polishing time of the chemical mechanical polishing process and improve the flatness of the film to be polished. When the temperature-sensitive agent is included in an amount exceeding about 50 volume%, the polishing speed of the film to be polished may decrease. Preferably, the temperature-sensitive agent may be included in an amount of about 1 volume% to about 40 volume%