KR-102963078-B1 - SUBSTRATE TREATING APPARATUS

KR102963078B1KR 102963078 B1KR102963078 B1KR 102963078B1KR-102963078-B1

Abstract

The present invention provides an apparatus for processing a substrate. In one embodiment, the substrate processing apparatus comprises: a chamber having a processing space inside; a support unit disposed within the processing space and supporting a substrate; and a plasma generating unit for generating plasma from a process gas supplied to the processing space, wherein the plasma generating unit comprises: a lower electrode member; an upper electrode member disposed opposite to the lower electrode; and a high-frequency power source for applying high-frequency power to the upper electrode member, and the upper electrode member comprises: a plurality of transparent plates provided stacked together; and a plurality of electrode patterns stacked on each of the plurality of transparent plates and not overlapping each other when viewed from a planar perspective.

Inventors

전민성
김윤상
김지헌
홍진희
전영은
진영조

Assignees

세메스 주식회사

Dates

Publication Date: 20260513
Application Date: 20211022

Claims (16)

In a substrate processing device, A chamber having a processing space inside; A support unit disposed within the above processing space and supporting a substrate; and It includes a plasma generation unit that generates plasma from a process gas supplied to the above-mentioned processing space, The above plasma generation unit is: Lower electrode member; An upper electrode member positioned opposite to the lower electrode member; and It includes a high-frequency power source that applies high-frequency power to the upper electrode member, The upper electrode member above is: A plurality of transparent plates provided stacked together; and A substrate processing device comprising a plurality of electrode patterns that are each laminated on the plurality of transparent plates and do not overlap each other when viewed from a plane.
In Article 1, The above high-frequency power supply is: A substrate processing device comprising a plurality of high-frequency power sources connected to each of the plurality of electrode patterns.
In Article 2, A substrate processing device in which the above plurality of high-frequency power sources have the same frequency of high-frequency power but have a time difference from each other.
In Article 2, A substrate processing device in which the above plurality of high-frequency power sources each have a different frequency of high-frequency power.
In Article 1, The above electrode pattern is a substrate processing device provided as a transparent electrode.
In Article 5, The above transparent electrode is, A substrate processing device made of any one or more of ITO, MnSnO, CNT, ZnO, IZO, ATO, SnO2 , IrO2 , RuO2 , graphene, carbon nanotube (CNT), AZO, FTO, GZO, In2O3, MgO, conductive polymer, metal nanowire, or a mixture thereof, or by multiple superposition.
In Article 1, The electrode patterns of the first group, which are selected from the plurality of electrode patterns above, are connected in parallel with each other, and the electrode patterns of the second group, which are the remaining plurality of electrode patterns, are connected in parallel with each other. A first high-frequency power supply is applied to the electrode pattern of the first group, and A substrate processing device to which a second high-frequency power supply is applied to the electrode pattern of the second group.
In Article 7, A substrate processing device in which the frequency of the high-frequency power supplied by the first high-frequency power source and the second high-frequency power source is the same but has a time difference.
In Article 7, A substrate processing device in which the frequencies of the high-frequency power supplied by the first high-frequency power source and the second high-frequency power source are different from each other.
In Article 1, The plurality of transparent plates above include a first transparent plate and a second transparent plate stacked on the upper layer of the first transparent plate, and The above plurality of electrode patterns are, A first electrode pattern laminated on the first transparent plate; It includes a second electrode pattern laminated on the second transparent plate, A substrate processing device in which the first electrode pattern and the second electrode pattern are a combination of multiple ring shapes having the same center and different diameters.
In Article 1, The plurality of transparent plates above include a first transparent plate and a second transparent plate stacked on the upper layer of the first transparent plate, and The above plurality of electrode patterns are, A first electrode pattern laminated on the first transparent plate; It includes a second electrode pattern laminated on the second transparent plate, A substrate processing device in which the first electrode pattern and the second electrode pattern are formed by linear electrodes arranged side by side.
In Article 1, The above transparent plate is a substrate processing device provided as a dielectric.
In Article 1, The above transparent plate is a substrate processing device provided with any one of the materials of quartz, sapphire, yttrium oxide, and spinel structured ceramic.
In Article 1, A substrate processing apparatus in which a protective layer of an etch-resistant material is further provided on one side of the transparent plate facing the processing space.
In Article 1, A substrate processing apparatus further comprising a heating unit disposed on the upper portion of the upper electrode member and irradiating energy for heating to the substrate by passing through the electrode member.
In Article 15, The above heating unit is, A substrate processing device that is one of a flash lamp, a microwave unit, or a laser unit.

Description

Substrate Treating Apparatus The present invention relates to a substrate processing apparatus that processes a substrate using plasma. To manufacture semiconductor devices, a desired pattern is formed on a substrate by performing various processes such as photolithography, etching, ashing, ion implantation, thin film deposition, and cleaning. Among these, the etching process is a process for removing selected areas of a film formed on a substrate, and wet etching and dry etching are used. Among these, a plasma-based etching device is used for dry etching. Generally, to form plasma, an electromagnetic field is created within the internal space of a chamber, and this electromagnetic field generates plasma from the process gas supplied inside the chamber. Plasma refers to an ionized gaseous state composed of ions, electrons, radicals, etc. Semiconductor device manufacturing processes utilize plasma to perform etching. FIG. 1 is a drawing showing a substrate processing apparatus according to one embodiment of the present invention. FIG. 2 is a cross-sectional view showing an upper electrode member according to a first embodiment of the present invention. FIG. 3 is a diagram illustrating the pattern of an electrode pattern and a high-frequency power source applied to the electrode pattern according to a first embodiment of the present invention. FIG. 4 is a diagram illustrating the pattern of an electrode pattern and a high-frequency power source applied to the electrode pattern according to a second embodiment of the present invention. FIG. 5 is a cross-sectional view relating to an upper electrode member according to a second embodiment of the present invention and a first method of applying a high-frequency power source thereto. FIG. 6 is a cross-sectional view relating to an upper electrode member according to a third embodiment of the present invention and a first method of applying a high-frequency power source thereto. FIG. 7 is a cross-sectional view relating to an upper electrode member according to a third embodiment of the present invention and a second method of applying a high-frequency power source thereto. FIG. 7 is a cross-sectional view relating to an upper electrode member according to a third embodiment of the present invention and a third method of applying a high-frequency power source thereto. FIG. 8 is a cross-sectional view relating to an upper electrode member according to a third embodiment of the present invention and a third method of applying a high-frequency power source thereto. FIG. 9 is a cross-sectional view relating to an upper electrode member according to a third embodiment of the present invention and a fourth method of applying a high-frequency power source thereto. FIG. 10 is a cross-sectional view relating to an upper electrode member according to a third embodiment of the present invention and a fifth method of applying a high-frequency power source thereto. FIG. 11 is a cross-sectional view showing an upper electrode member according to a fourth embodiment of the present invention. Other advantages and features of the present invention and methods for achieving them will become clear by referring to the embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below but can be implemented in various different forms. These embodiments are provided merely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims. Unless otherwise defined, all terms used herein (including technical or scientific terms) have the same meaning as generally accepted by the general art to which this invention pertains. Terms defined by general dictionaries may be interpreted as having the same meaning as they do in the relevant art and/or in the text of this application, and will not be conceptualized or interpreted overly formally, even if they are not explicitly defined herein. Terms such as "first," "second," etc., may be used to describe various components, but said components should not be limited by said terms. These terms are used solely for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be named the second component, and similarly, the second component may be named the first component. Singular expressions include plural expressions unless the context clearly indicates otherwise. Additionally, the shapes and sizes of elements in drawings may be exaggerated for clearer explanation. The terms used herein are for describing embodiments and are not intended to limit the invention. In this specification, the singular form includes the plural form unless specifically stated otherwise in the text. As used in this specification, 'comprising' a