KR-102963098-B1 - GAS SUPPLYING UNIT AND APPARATUS FOR TREATING SUBSTRATE WITH THE UNIT

Abstract

The present invention provides an apparatus for processing a substrate. An apparatus for processing a substrate according to one embodiment comprises: a housing having a processing space inside; a support unit for supporting a substrate in the processing space; and a gas supply unit for supplying gas to the processing space, wherein the gas supply unit includes a nozzle member connected to a gas line for spraying gas into the processing space, and the nozzle member can supply the gas to the processing space at a first angle directed toward a substrate supported by the support unit and at a second angle different from the first angle.

Inventors

• 손형규

Assignees

• 세메스 주식회사

Dates

Publication Date

20260512

Application Date

20220727

Priority Date

20211227

Claims (18)

1. In a device for processing substrates, Housing having a processing space inside; A support unit that supports a substrate in the above processing space; and It includes a gas supply unit that supplies gas to the above-mentioned processing space, The above gas supply unit includes a nozzle member connected to a gas line to inject gas into the processing space, and The above nozzle member is, A feeding housing having an internal space and a spray hole formed therein that is fluidly in communication with the processing space; A feeding tube located in the internal space and having a feeding hole formed therein that is in fluid communication with the internal space; and It includes a driving unit that moves the feeding tube in the internal space, The above injection hole includes a first injection hole and a second injection hole, and The first injection hole is formed at a first angle at the tip of the feeding housing, and The second injection hole is formed at a second angle at the bottom of the feeding housing, and The above gas line is connected to one end of the feeding tube, and The above feeding hole is formed at the other end of the feeding tube facing the first injection hole, and A substrate processing device in which the second angle is different from the first angle.
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5. In paragraph 1, A substrate processing device in which a sealing member surrounding the first injection hole is installed in the internal space.
6. In paragraph 5, The above driving unit moves the feeding tube between a first injection position and a second injection position, The above first injection position is, The above feeding tube advances to a position where the other end of the feeding tube contacts the sealing member, and The above second injection position is, A substrate processing apparatus characterized by the above feeding tube retracting so that the other end of the above feeding tube is at a position spaced apart from the sealing member.
7. In paragraph 1, A substrate processing device in which the first injection hole and the second injection hole are arranged to protrude from the side wall of the housing in a direction toward the processing space.
8. In any one of paragraphs 5 through 7, The above nozzle member is, A plurality of substrate processing devices installed on the side walls of the housing along the perimeter direction of the housing.
9. In paragraph 8, Some of the plurality of nozzle members are connected to a first gas line that supplies a first gas, and A substrate processing device in which some of the above-mentioned plurality of nozzle members are connected to a second gas line that supplies a second gas different from the first gas.
10. In Paragraph 9, A substrate processing device in which a nozzle member connected to the first gas line and a nozzle member connected to the second gas line are alternately arranged along the circumferential direction of the housing.
11. In Paragraph 10, The first gas is a gas that adsorbs to the surface of the substrate, and A substrate processing apparatus characterized in that the second gas reacts with the first gas or is excited in the processing space to etch a film formed on the substrate.
12. In a gas supply unit that supplies gas to a processing space through a nozzle member, The above nozzle member is, A feeding housing having an internal space and a spray hole formed therein that is fluidly in communication with the processing space; A feeding tube located in the internal space and having a feeding hole formed therein that is in fluid communication with the internal space; and It includes a driving unit that moves the feeding tube in the internal space, The above injection hole includes a first injection hole and a second injection hole, and The first injection hole is formed at a first angle at the tip of the feeding housing, and The second injection hole is formed at a second angle at the bottom of the feeding housing, and The gas line supplying the above gas is connected to one end of the feeding tube, and The above feeding hole is formed at the other end of the feeding tube facing the first injection hole, and A gas supply unit in which the second angle is different from the first angle.
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15. In Paragraph 12, The above driving unit moves the feeding tube between a first injection position and a second injection position, The above first injection position is, The above feeding tube moves forward so that the feeding hole is in a position where it is in fluid communication with the first injection hole among the first injection hole and the second injection hole, and The above second injection position is, A gas supply unit characterized by the above feeding tube moving backward so that the above feeding hole is in a position where it is in fluid communication with the first injection hole and the second injection hole, respectively.
16. In Paragraph 12, A gas supply unit in which a sealing member surrounding the first injection hole is installed in the internal space.
17. In either of paragraphs 15 and 16, The above nozzle members are installed in multiple numbers along the perimeter direction of the side wall of the housing defining the processing space, and Some of the plurality of nozzle members are connected to a first gas line that supplies a first gas, and A gas supply unit in which some of the above-mentioned plurality of nozzle members are connected to a second gas line that supplies a second gas different from the first gas.
18. In Paragraph 17, The first gas is a gas that adsorbs to the surface of a substrate introduced into the processing space, and A gas supply unit characterized in that the second gas reacts with the first gas or is a gas that is excited in the processing space and etches a film formed on the substrate.

Description

Gas supply unit and apparatus for treating substrate with the same and method for treating substrate The present invention relates to a gas supply unit and an apparatus for processing a substrate including the same. Various processes such as cleaning, deposition, photolithography, etching, and ion implantation are performed to manufacture semiconductor devices. In these various processes for manufacturing semiconductor devices, gas is supplied to the processing space where the substrate is treated. For example, in the semiconductor manufacturing process where a substrate is treated using plasma, the gas supplied to the processing space is excited under a strong electric field, very high temperature, or RF electromagnetic fields to generate plasma. Gas is supplied to the processing space from various areas, such as the upper side and the side of the processing space. In particular, to supply gas from the side of the processing space, a nozzle for spraying gas must be installed on the side wall of the housing defining the processing space. When a nozzle is fixedly installed on the side wall of the housing, the angle or spray direction of the nozzle is structurally limited. In a process for manufacturing semiconductor devices, multiple gases with different characteristics can be supplied to a processing space. For example, gases with different molecular weights can be supplied to the processing space. In this case, gases with different molecular weights have different fluidities within the processing space. In particular, when gases with different characteristics are supplied to the processing space through nozzles fixedly installed on the sidewall of a housing, each gas exhibits a different fluidity within the processing space. For example, if the first gas acts on a first region on the substrate when supplied to the processing space using a nozzle installed on the side wall, the second gas may act on a second region different from the first region when supplied to the processing space using the same nozzle with a second gas having a different molecular weight. Accordingly, if gases with different characteristics are injected collectively into the processing space using a nozzle fixedly installed on the side wall of the housing that has the same angle or a nozzle that sprays in the same direction, the different gases within the processing space do not exhibit the same fluidity and cannot act consistently on the substrate, resulting in a decrease in process efficiency. FIG. 1 is a schematic diagram showing a substrate processing apparatus according to one embodiment of the present invention. FIG. 2 is a schematic diagram showing a process chamber according to one embodiment of FIG. 1. FIG. 3 is a top view of the arrangement of a second nozzle member according to one embodiment of FIG. 2. FIG. 4 is a cross-sectional view of part A of FIG. 2, schematically showing the appearance of a second nozzle member according to one embodiment. FIG. 5 is a cross-sectional view schematically showing the appearance of a feeding tube according to one embodiment of FIG. 4 when it is positioned at a second injection position. FIG. 6 is a cross-sectional view schematically showing the flow of gas when the feeding tube according to one embodiment of FIG. 4 is positioned at the first injection position. FIG. 7 is a cross-sectional view schematically showing the flow of gas when the feeding tube according to one embodiment of FIG. 4 is positioned at the second injection position. FIG. 8 is a cross-sectional view schematically showing the appearance of a feeding tube according to another embodiment of FIG. 4 when it is positioned at a third position. FIG. 9 is a cross-sectional view of part A of FIG. 2, schematically showing the appearance of a second nozzle member according to another embodiment. FIG. 10 is a schematic drawing showing a front view of a second nozzle member according to another embodiment of FIG. 2. FIG. 11 is a schematic drawing showing a second nozzle member according to another embodiment of FIG. 10 viewed from below. Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. Embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be interpreted as being limited by the embodiments described below. These embodiments are provided to more completely explain the present invention to those with average knowledge in the art. Accordingly, the shapes of components in the drawings are exaggerated to emphasize clearer explanations. Terms such as "first," "second," etc., may be used to describe various components, but said components should not be limited by said terms. These terms may be used for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be named the second component, and similarly,