KR-102963113-B1 - Magnetoresistive Effect Memory, Memory Array, and Memory System

Abstract

The recording of the magnetoresistive effect memory is simplified. The magnetoresistive effect memory has a magnetoresistive effect element (120). The magnetoresistive effect element (120) of the magnetoresistive effect memory has a voltage-controlled magnetic anisotropy effect layer (first magnetoresistive free layer (141)) which is a magnetization free layer with a variable magnetization direction and has a voltage-controlled magnetic anisotropy effect, a non-voltage-controlled magnetic anisotropy effect layer (second magnetization free layer (143)) which is a magnetization free layer with a variable magnetization direction and does not have a voltage-controlled magnetic anisotropy effect, and a magnetization fixed layer (122) which has magnetic anisotropy and has an invariant magnetization direction.

Inventors

• 사카이 루이
• 호소미 마사노리
• 히고 유타카
• 히라가 케이조

Assignees

• 소니 세미컨덕터 솔루션즈 가부시키가이샤

Dates

Publication Date

20260512

Application Date

20221031

Priority Date

20211117

Claims (11)

1. A magnetoresistive effect memory characterized by having a magnetoresistive effect element comprising: a voltage-controlled magnetic anisotropy effect layer having a voltage-controlled magnetic anisotropy effect as a magnetization free layer having a variable magnetization direction; a non-voltage-controlled magnetic anisotropy effect layer not having a voltage-controlled magnetic anisotropy effect as a magnetization free layer having a variable magnetization direction; and a magnetization fixed layer having magnetic anisotropy and an invariant magnetization direction.
2. In paragraph 1, A magnetoresistive effect memory characterized by further having a separation layer that separates the voltage-controlled magnetic anisotropy effect layer and the non-voltage-controlled magnetic anisotropy effect layer.
3. In paragraph 1, A magnetoresistance effect memory characterized by further having an in-plane magnetic film that applies a magnetic field to the voltage-controlled magnetic anisotropy effect layer and the non-voltage-controlled magnetic anisotropy effect layer.
4. In paragraph 1, A magnetoresistance effect memory characterized in that the magnetoresistance effect element further comprises a tunnel barrier layer disposed adjacent to the voltage-controlled magnetic anisotropy effect layer.
5. In paragraph 1, A magnetoresistance effect memory characterized in that the magnetoresistance effect element further comprises a second magnetization fixed layer having magnetic anisotropy and an invariant magnetization direction, and the voltage-controlled magnetic anisotropy effect layer and the non-voltage-controlled magnetic anisotropy effect layer are disposed between the magnetization fixed layer and the second magnetization fixed layer.
6. In paragraph 1, A memory cell having the above magnetoresistance effect element and a selection element for selecting the magnetoresistance effect element, and A recording circuit that performs recording on the magnetoresistance effect element through the above-mentioned selection element, and A magnetoresistance effect memory characterized by having a read circuit that performs reading from the magnetoresistance effect element through the above-mentioned selection element.
7. A magnetoresistance effect element comprising: a voltage-controlled magnetic anisotropy effect layer having a voltage-controlled magnetic anisotropy effect as a magnetization free layer having a variable magnetization direction; a non-voltage-controlled magnetic anisotropy effect layer not having a voltage-controlled magnetic anisotropy effect as a magnetization free layer having a variable magnetization direction; and a magnetization fixed layer having magnetic anisotropy and an invariant magnetization direction. A plurality of memory cells having a selection element for selecting the magnetoresistance effect element, and A recording circuit that selects the above plurality of memory cells and performs recording on the magnetoresistance effect element through the above selection element, and A memory array characterized by having a reading circuit that selects the plurality of memory cells and performs reading from the magnetoresistance effect element through the selection element.
8. A magnetoresistance effect element comprising: a voltage-controlled magnetic anisotropy effect layer having a voltage-controlled magnetic anisotropy effect as a magnetization free layer having a variable magnetization direction; a non-voltage-controlled magnetic anisotropy effect layer not having a voltage-controlled magnetic anisotropy effect as a magnetization free layer having a variable magnetization direction; and a magnetization fixed layer having magnetic anisotropy and an invariant magnetization direction. A plurality of memory cells having a selection element for selecting the magnetoresistance effect element, and A recording circuit that selects the above plurality of memory cells and performs recording on the magnetoresistance effect element through the above selection element, and A reading circuit that selects the plurality of memory cells and performs reading from the magnetoresistance effect element through the selection element, and A memory system characterized by having a memory control unit that controls the recording and reading of data in a plurality of memory cells through the above-mentioned recording circuit and the above-mentioned reading circuit.
9. A magnetoresistive effect memory characterized by having a magnetoresistive effect element comprising a plurality of voltage-controlled magnetic anisotropy effect layers having a voltage-controlled magnetic anisotropy effect as a magnetization free layer having a variable magnetization direction, and a magnetization fixed layer having magnetic anisotropy and an invariant magnetization direction.
10. In Paragraph 9, A magnetoresistance effect memory characterized in that the magnetoresistance effect element further comprises a plurality of tunnel barrier layers disposed adjacently to each of the plurality of voltage-controlled magnetic anisotropy effect layers.
11. In Paragraph 9, The above magnetoresistance effect element A vertical magnetic anisotropy loss layer, which is a voltage-controlled magnetic anisotropy effect layer that loses vertical magnetic anisotropy when a predetermined recording voltage is applied, and A magnetoresistance effect memory characterized by having a vertical magnetic anisotropy residual layer, which is a voltage-controlled magnetic anisotropy effect layer that retains vertical magnetic anisotropy even when a predetermined recording voltage is applied.

Description

Magnetoresistive Effect Memory, Memory Array, and Memory System The present disclosure relates to a magnetoresistive effect memory and a memory array and memory system using a magnetoresistive effect memory. Magnetoresistive RAM (MRAM), which employs magnetic memory elements in non-volatile memory devices, is in use. This MRAM is a memory device that includes a magnetization fixed layer (generally referred to as a reference layer) in which the direction of magnetization is fixed and a magnetization free layer (generally referred to as a memory layer) in which the direction of magnetization can be reversed, and performs data recording by reversing the direction of magnetization of the magnetization free layer. In this MRAM, a voltage-controlled MRAM that performs data recording by applying a pulse voltage has been proposed (see, for example, Patent Document 1). In this conventional voltage-controlled MRAM, recording is performed by utilizing the precession of the magnetization vector of the magnetized free layer generated by the application of voltage. Recording can be performed by stopping the application of voltage at the timing when the magnetization vector of the magnetized free layer is reversed during this precession. FIG. 1 is a drawing illustrating an example of the configuration of a memory system according to an embodiment of the present disclosure. FIG. 2 is a drawing illustrating an example of the configuration of a memory cell according to an embodiment of the present disclosure. FIG. 3 is a drawing illustrating an example of the configuration of a magnetoresistance effect element according to a first embodiment of the present disclosure. FIG. 4 is a drawing illustrating an example of a recording method of a magnetoresistance effect element according to a first embodiment of the present disclosure. FIG. 5A is a drawing illustrating an example of recording of a magnetoresistance effect element according to a first embodiment of the present disclosure. FIG. 5B is a drawing illustrating an example of recording of a magnetoresistance effect element according to a first embodiment of the present disclosure. FIG. 6 is a drawing illustrating an example of the processing sequence of a record processing according to an embodiment of the present disclosure. FIG. 7 is a drawing illustrating an example of the configuration of a magnetoresistance effect element according to a modified example of the first embodiment of the present disclosure. FIG. 8 is a drawing illustrating an example of the configuration of a magnetoresistance effect element according to a modified example of the first embodiment of the present disclosure. FIG. 9 is a drawing illustrating an example of the configuration of a magnetoresistance effect element according to a modified example of the first embodiment of the present disclosure. FIG. 10 is a drawing illustrating an example of the configuration of a magnetoresistance effect element according to a modified example of the first embodiment of the present disclosure. FIG. 11 is a drawing illustrating an example of the configuration of a magnetoresistance effect element according to a modified example of a second embodiment of the present disclosure. FIG. 12 is a drawing illustrating an example of a recording method of a magnetoresistance effect element according to a second embodiment of the present disclosure. FIG. 13 is a drawing illustrating an example of the perpendicular magnetic anisotropy of a magnetized free layer according to a second embodiment of the present disclosure. FIG. 14 is a drawing illustrating an example of the configuration of a magnetoresistance effect element according to a modified example of the second embodiment of the present disclosure. FIG. 15 is a drawing illustrating an example of the configuration of a magnetoresistance effect element according to a modified example of a second embodiment of the present disclosure. FIG. 16 is a drawing illustrating an example of the configuration of a magnetoresistance effect element according to a modified example of a second embodiment of the present disclosure. FIG. 17 is a drawing illustrating an example of the configuration of a magnetoresistance effect element according to a modified example of a second embodiment of the present disclosure. FIG. 18 is a drawing illustrating an example of the configuration of a magnetoresistance effect element according to a modified example of a second embodiment of the present disclosure. FIG. 19 is a drawing illustrating an example of the configuration of a magnetoresistance effect element according to a modified example of a second embodiment of the present disclosure. FIG. 20 is a drawing illustrating an example of the configuration of a magnetoresistance effect element according to a modified example of an embodiment of the present disclosure. FIG. 21 is a drawing illustrating an example of the configuration of a magnetoresistance effect element according to a modified examp