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KR-102963275-B1 - Gas injecting assembly and substrate processing apparatus including the same

KR102963275B1KR 102963275 B1KR102963275 B1KR 102963275B1KR-102963275-B1

Abstract

The present invention relates to a gas injection assembly and a substrate processing apparatus including the same, and more specifically, to a gas injection assembly for injecting process gas for substrate processing and a substrate processing apparatus including the same. The present invention discloses a gas injection assembly installed in a process chamber (10) that forms a processing space (S1) for substrate processing inside, and injects process gas into the processing space (S1). The gas injection assembly comprises: a backing plate part (100) installed at the top of the process chamber (10) and including a feeding hole (120) formed through the center to introduce the process gas from the outside, and a feeding channel (130) formed between the feeding hole (120) and the bottom surface to diffuse the process gas; and a flow rate control part (200) provided in the feeding channel (130) to control the flow rate of the process gas flowing through the feeding channel (130).

Inventors

  • 차형진
  • 장희섭
  • 정태환

Assignees

  • 주식회사 원익아이피에스

Dates

Publication Date
20260511
Application Date
20221004

Claims (20)

  1. A gas injection assembly installed in a process chamber (10) that forms a processing space (S1) for substrate processing inside, and injecting process gas into the processing space (S1). A backing plate portion (100) installed at the top of the process chamber (10), comprising a feeding hole (120) formed through the center to introduce the process gas from the outside, and a feeding channel (130) formed between the feeding hole (120) and the bottom surface to diffuse the process gas; It includes a flow rate control unit (200) provided in the feeding channel (130) to control the flow rate of the process gas flowing through the feeding channel (130), and The above flow rate control unit (200) is, A gas injection assembly characterized by including a flow rate control member (210) installed so that at least a portion is inserted into the feeding channel (130) by penetrating a through hole (150) formed in the backing plate portion (100) to communicate with the feeding channel (130), and a cover portion (220) covering the upper surface of the flow rate control member (210).
  2. In claim 1, A gas injection assembly characterized by additionally including a diffusion plate section (300) which is provided in a position that overlaps vertically with the feeding hole (120) in the lower part of the backing plate section (100) and diffuses the process gas introduced through the feeding hole (120) in a horizontal direction.
  3. In claim 2, A gas injection assembly characterized by additionally including a diffusion member (500) provided inside the feeding hole (120) or on the upper surface of the diffusion plate part (300) to diffuse the process gas in a horizontal direction.
  4. In claim 2, A gas injection assembly characterized by additionally including an injection plate portion (400) provided at the lower part of the backing plate portion (100), wherein a plurality of injection holes (401) are formed to inject the process gas into the processing space (S1).
  5. In claim 1, The above feeding hole (120) is, A gas injection assembly characterized by the upper inner diameter being larger than the lower inner diameter based on the above feeding channel (130).
  6. A gas injection assembly installed in a process chamber (10) that forms a processing space (S1) for substrate processing inside, and injecting process gas into the processing space (S1). A backing plate portion (100) installed at the top of the process chamber (10), comprising a feeding hole (120) formed through the center to introduce the process gas from the outside, and a feeding channel (130) formed between the feeding hole (120) and the bottom surface to diffuse the process gas; It includes a flow rate control unit (200) provided in the feeding channel (130) to control the flow rate of the process gas flowing through the feeding channel (130), and The above feeding hole (120) is, A gas injection assembly characterized by comprising an upper feeding hole (121) formed with a first inner diameter (D1), a lower feeding hole (122) formed with a second inner diameter (D2) smaller than the first inner diameter (D1) below the upper feeding hole (121), and an inclined feeding hole (123) formed between the upper feeding hole (121) and the lower feeding hole (122).
  7. In claim 6, The above feeding channel (130) is, A gas injection assembly characterized by having an end formed in the inclined feeding hole (123).
  8. In claim 6, The above feeding channel (130) is, A gas injection assembly characterized by being formed with a third inner diameter (D3) smaller than the first inner diameter (D1).
  9. In claim 1, The above feeding channel (130) is, A gas injection assembly characterized by having a plurality of radially formed around the above-mentioned feeding hole (120).
  10. In claim 1, The above feeding channel (130) is, A gas injection assembly characterized by being formed on a diagonal plane of the backing plate portion (100) above.
  11. In claim 1, The above feeding channel (130) is, A gas injection assembly characterized by being formed diagonally offset from the plane of the backing plate portion (100).
  12. In claim 1, The above backing plate portion (100) is, A gas injection assembly characterized by additionally including an auxiliary feeding section (140) formed on the bottom surface to communicate with the above-mentioned feeding channel (130) and injecting the process gas received from the above-mentioned feeding channel (130).
  13. In claim 12, The above feeding channel (130) is, A gas injection assembly characterized by being formed by penetrating diagonally between the above feeding hole (120) and the above auxiliary feeding part (140).
  14. A gas injection assembly installed in a process chamber (10) that forms a processing space (S1) for substrate processing inside, and injecting process gas into the processing space (S1). A backing plate portion (100) installed at the top of the process chamber (10), comprising a feeding hole (120) formed through the center to introduce the process gas from the outside, and a feeding channel (130) formed between the feeding hole (120) and the bottom surface to diffuse the process gas; It includes a flow rate control unit (200) provided in the feeding channel (130) to control the flow rate of the process gas flowing through the feeding channel (130), and The above backing plate portion (100) is, It further includes an auxiliary feeding section (140) formed on the bottom surface to communicate with the above-mentioned feeding channel (130) and spraying the process gas received from the above-mentioned feeding channel (130). The above feeding channel (130) is, A gas injection assembly characterized by including a first feeding channel (131) formed in the direction of the edge from the feeding hole (120), and a second feeding channel (132) formed between the first feeding channel (131) and the auxiliary feeding section (140).
  15. In claim 14, The above first feeding channel (131) is, A gas injection assembly characterized by being formed horizontally.
  16. In claim 14, The above first feeding channel (131) is, A gas injection assembly characterized by being formed to extend outward from the feeding hole (120) on a plane to the auxiliary feeding section (140).
  17. In claim 14, The above second feeding channel (132) is, A gas injection assembly characterized by being formed vertically with respect to the bottom surface of the backing plate portion (100).
  18. In claim 14, The above second feeding channel (132) is, A gas injection assembly characterized by being inclined so that as it moves downward along the process gas flow direction, it becomes adjacent to the edge side of the feeding hole (120).
  19. A gas injection assembly installed in a process chamber (10) that forms a processing space (S1) for substrate processing inside, and injecting process gas into the processing space (S1). A backing plate portion (100) installed at the top of the process chamber (10), comprising a feeding hole (120) formed through the center to introduce the process gas from the outside, and a feeding channel (130) formed between the feeding hole (120) and the bottom surface to diffuse the process gas; It includes a flow rate control unit (200) provided in the feeding channel (130) to control the flow rate of the process gas flowing through the feeding channel (130), and The above backing plate portion (100) is, It further includes an auxiliary feeding section (140) formed on the bottom surface to communicate with the above-mentioned feeding channel (130) and spraying the process gas received from the above-mentioned feeding channel (130). The above auxiliary feeding unit (140) is, A gas injection assembly characterized by being formed with an incline on the bottom surface of the backing plate portion (100).
  20. In claim 12, The above auxiliary feeding unit (140) is, A gas injection assembly characterized by being formed vertically with respect to the bottom surface of the backing plate portion (100).

Description

Gas injecting assembly and substrate processing apparatus including the same The present invention relates to a gas injection assembly and a substrate processing apparatus including the same, and more specifically, to a gas injection assembly for injecting process gas for substrate processing and a substrate processing apparatus including the same. A substrate processing device refers to a device that performs substrate processing, such as deposition or etching, on the surface of a substrate placed on a substrate support by injecting process gas into a sealed processing space. Generally, the substrate processing device comprises a process chamber forming a processing space inside, a gas injection assembly installed above the process chamber to inject process gas into the processing space, and a substrate support member facing the gas injection assembly to support the substrate. Meanwhile, as the size of the gas injection assembly and the substrate support increases due to the increase in substrate area, uniform process gas injection through the gas injection assembly is required to improve the uniformity of substrate processing. However, conventional gas injection assemblies introduce process gas from the center and deliver it downwards; even with a diffusion space formed, the process gas cannot sufficiently diffuse horizontally due to the increased size, resulting in a problem of uneven process gas injection. Accordingly, conventional gas injection assemblies have the problem of low uniformity in substrate processing and low thin film density due to non-uniform process gas injection. (Patent Document 1) KR 10-2013-0136981 A FIG. 1 is a cross-sectional view showing the appearance of a substrate processing apparatus according to the present invention. FIG. 2 is a bottom view showing the appearance of a first embodiment of a gas injection assembly according to the present invention. FIG. 3 is a cross-sectional view showing the III-III' direction of the gas injection assembly according to FIG. 2. FIG. 4 is a bottom view showing a second embodiment of a gas injection assembly according to the present invention. FIG. 5 is a cross-sectional view showing the V-V' direction of the gas injection assembly according to FIG. 4. Figure 6 is an enlarged view of section A showing the flow rate control section of the gas injection assembly according to Figure 5. Hereinafter, a gas injection assembly according to the present invention and a substrate processing apparatus including the same will be described with reference to the attached drawings. As shown in FIG. 1, the substrate processing device according to the present invention comprises: a process chamber (10) forming a processing space (S1) for substrate processing; a substrate support member (20) installed in the process chamber (10) to support a substrate (1); and a gas injection assembly (30) installed on the upper part of the substrate support member (20) to inject process gas. Here, the substrate (1) that is the subject of substrate processing is configured to perform substrate processing such as etching and deposition, and any substrate such as a semiconductor manufacturing substrate, an LCD manufacturing substrate, an OLED manufacturing substrate, a solar cell manufacturing substrate, or a transparent glass substrate is possible. The above process chamber (10) is configured to form a processing space (S1) for substrate processing, and various configurations are possible. For example, the process chamber (10) may include a chamber body (12) with an open upper side and an upper lead (11) detachably coupled to the opening of the chamber body (12). The above chamber body (12) is configured such that a substrate support member (20) is installed, and various configurations are possible, and one or more gates (13) may be formed on the inner wall for introducing and discharging a substrate (1) into the processing space (S1). The upper lead (11) is configured to cover the opening of the chamber body (12) to form a sealed processing space (S1) together with the chamber body (12), and various configurations are possible. For example, the upper lead (11) can be configured in various ways, such as having an opening formed in the center so that an insulating member (not shown) is interposed and a gas injection assembly (30) described later can be installed through it. The above substrate support member (20) is configured to support the substrate (1) by being installed on the lower side of the processing space (S1) within the process chamber (10), and can be configured in various ways. For example, the substrate support member (20) may include a substrate mounting member (21) on which a substrate (1) is mounted, and a support shaft (22) installed on the lower side of the substrate mounting member (21) so that the substrate mounting member (21) can move up and down. As shown in FIG. 1, the substrate support member (20) may be installed to be able to move up and down for intro