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KR-102963427-B1 - SUBSTRATE TREATING APPARATUS AND METHOD

KR102963427B1KR 102963427 B1KR102963427 B1KR 102963427B1KR-102963427-B1

Abstract

According to exemplary embodiments, a substrate processing apparatus is provided. The substrate processing apparatus comprises: a chamber having a processing space for processing a substrate; a fluid supply device connected to the chamber and supplying a supercritical fluid to the upper surface of the substrate, wherein the fluid supply device comprises: a fluid supply pipe through which the supercritical fluid flows, connecting a supercritical fluid storage unit and the chamber; a filter disposed downstream of the fluid supply pipe and filtering particles contained in the supercritical fluid; and a silencer disposed upstream of the filter in the fluid supply pipe, wherein the silencer can reduce the pressure of the supercritical fluid.

Inventors

  • 최기훈

Assignees

  • 세메스 주식회사

Dates

Publication Date
20260508
Application Date
20220616

Claims (8)

  1. A chamber having a processing space for processing a substrate; It includes a fluid supply device connected to the chamber and supplying a supercritical fluid to the upper surface of the substrate, The above fluid supply device is, A fluid supply pipe connecting a supercritical fluid storage unit and the chamber, through which the supercritical fluid flows; A filter disposed downstream of the above fluid supply pipe and filtering particles contained in the supercritical fluid; A silencer disposed in the fluid supply piping upstream of the filter; and It includes an orifice disposed in the fluid supply pipe upstream of the above silencer, and The above orifice controls the flow rate of the supercritical fluid, and A substrate processing device characterized by the above-mentioned silencer being configured to reduce the shock waves applied by the supercritical fluid to the filter.
  2. In Article 1, A substrate processing device characterized in that the above-mentioned silencer is one of a muffler, a suppressor, and a silencer.
  3. In Article 1, The above fluid supply piping includes a first pipe and a second pipe, and A substrate processing device characterized in that the first pipe and the second pipe each include the silencer and the filter.
  4. In Article 1, A substrate processing apparatus characterized by the fact that the processing of the above substrate is a process of removing organic solvent remaining on the substrate by dissolving it in a supercritical fluid.
  5. In Article 1, A substrate processing device characterized by the above supercritical fluid flowing sequentially through the above silencer and the above filter.
  6. A supercritical fluid is supplied to a processing space for processing a substrate, and a substrate placed within the processing space is processed, A step of supplying the above supercritical fluid to a fluid supply pipe; A step of controlling the flow rate of the supercritical fluid through an orifice provided in the fluid supply pipe; A step of reducing the shock wave of the supercritical fluid through a silencer provided downstream of the fluid supply pipe from the orifice; A step of filtering particles contained in the supercritical fluid at a filter provided downstream of the fluid supply pipe from the silencer; A step of supplying the filtered supercritical fluid to the processing space; and A substrate processing method comprising the step of processing the above substrate.
  7. In Article 6, A substrate processing method characterized by the step of processing the substrate by dissolving the organic solvent remaining on the substrate in a supercritical fluid to remove it from the substrate.
  8. In Article 6, A substrate processing method characterized in that the supercritical fluid is carbon dioxide.

Description

Substrate Treating Apparatus and Substrate Treating Method The technical concept of the present invention relates to a substrate processing apparatus and a substrate processing method. Semiconductor devices are manufactured by forming circuit patterns on a substrate through various processes, including photolithography. Recently, a supercritical drying process using supercritical fluids to dry the substrate has been utilized for semiconductor devices with line widths of 30 nm or less. A supercritical fluid is a fluid that possesses both gaseous and liquid properties at temperatures above the critical temperature and critical pressure; it has excellent diffusion and penetration capabilities, high solubility, and almost no surface tension, making it very useful for drying substrates. For such a supercritical process, filtered supercritical fluid is supplied into the process chamber. However, the filter that filters the supercritical fluid allows residual particles within the filter to pass through due to the shock caused by the fluid. In this case, the filtering function is significantly degraded, and the purity of the supercritical fluid supplied to the drying process is reduced. FIG. 1 is a plan view schematically showing a substrate processing system according to one embodiment of the present invention. FIG. 2 is a schematic diagram showing one embodiment of the liquid treatment device (400) of FIG. 1. FIG. 3 is a schematic diagram showing one embodiment of the substrate processing device (500) of FIG. 1. FIG. 4 is a drawing showing a fluid supply device of a substrate processing device according to one embodiment of the present invention. FIG. 5 is a flowchart illustrating a substrate processing method according to some embodiments. Figures 6A to 6D of FIG. 6 are flowcharts for explaining a silencer according to some embodiments. Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings. In describing with reference to the attached drawings, identical or corresponding components are given the same reference number regardless of the drawing symbols, and redundant descriptions thereof will be omitted. FIG. 1 is a plan view schematically showing a substrate processing system according to one embodiment of the present invention. Referring to FIG. 1, the substrate processing system includes an index module (10) and a processing module (20). According to one embodiment, the index module (10) and the processing module (20) are arranged along one direction. Hereinafter, the direction in which the index module (10) and the processing module (20) are arranged is referred to as the first direction (92), the direction perpendicular to the first direction (92) when viewed from above is referred to as the second direction (94), and the direction perpendicular to both the first direction (92) and the second direction (94) is referred to as the third direction (96). The index module (10) returns the substrate (W) from the container (80) containing the substrate (W) to the processing module (20), and receives the substrate (W) that has been processed in the processing module (20) back into the container (80). The longitudinal direction of the index module (10) is provided as a second direction (94). The index module (10) has a load port (12) and an index frame (14). The load port (12) is located on the opposite side of the processing module (20) relative to the index frame (14). The container (80) containing the substrates (W) is placed in the load port (12). Multiple load ports (12) may be provided, and multiple load ports (12) may be arranged along the second direction (94). As the container (80), a sealed container such as a Front Open Unified Pod (FOUP) may be used. The container (80) may be placed at the load port (12) by a transport means (not shown) such as an overhead transfer, an overhead conveyor, or an automatic guided vehicle, or by a worker. An index robot (120) is provided in the index frame (14). A guide rail (140) is provided within the index frame (14) with a longitudinal direction in the second direction (94), and the index robot (120) can be provided to be movable on the guide rail (140). The index robot (120) includes a hand (122) on which a substrate (W) is placed, and the hand (122) can be provided to move forward and backward, rotate about the third direction (96) as an axis, and move along the third direction (96). A plurality of hands (122) are provided spaced apart in the vertical direction, and the hands (122) can move forward and backward independently of each other. The processing module (20) includes a buffer unit (200), a return device (300), a liquid processing device (400), and a substrate processing device (500). The buffer unit (200) provides a space where the substrate (W) introduced into the processing module (20) and the substrate (W) removed from the processing module (20) temporarily stay. The liquid treatment device (400)