KR-102963632-B1 - CMP SLURRY COMPOSITION FOR POLISHING TUNGSTEN PATTERN WAFER AND METHOD FOR POLISHING TUNGSTEN PATTERN WAFER USING THE SAME

Abstract

A CMP slurry composition for polishing a tungsten pattern wafer and a tungsten polishing method using the same are disclosed, characterized by comprising a solvent; an abrasive; and a resinous poly(amidoamine) having an amino group at the terminal end.

Inventors

• 심수연
• 이지호
• 이종원
• 이현우

Assignees

• 삼성에스디아이 주식회사

Dates

Publication Date

20260511

Application Date

20210318

Claims (11)

1. menstruum; Abrasive; and Comprising a dendritic poly(amidoamine) containing an amino group at the terminal; and The generation number of the above resinous poly(amidoamine) is 2, 3, 4, or 5, and A CMP slurry composition for polishing tungsten pattern wafers in which the above amino group accounts for 10% to 100% of the total terminal groups of the above dendritic poly(amidoamine), The above CMP slurry composition for polishing tungsten pattern wafers comprises the above dendritic poly(amidoamine) in an amount of 0.0001 weight% to 0.1 weight%, and The above CMP slurry composition for polishing a tungsten pattern wafer comprises 0.1% to 8% by weight of the abrasive, and The above CMP slurry composition for polishing a tungsten pattern wafer contains 0.002% to 0.1% by weight of a catalyst and 0.01% to 0.5% by weight of an organic acid, and The above CMP slurry composition for polishing tungsten pattern wafers has a pH of 2 to 4, and A CMP slurry composition for polishing tungsten pattern wafers, characterized in that the catalyst is one or more of an iron ion compound, an iron ion complex, and a hydrate thereof.
2. A CMP slurry composition for polishing a tungsten pattern wafer according to claim 1, characterized in that the dendritic poly(amidoamine) comprises a poly(amidoamine) dendrimer.
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8. A CMP slurry composition for polishing a tungsten pattern wafer according to claim 1, characterized in that the CMP slurry composition for polishing a tungsten pattern wafer further comprises an oxidizing agent.
9. A CMP slurry composition for polishing a tungsten pattern wafer according to claim 8, characterized in that the oxidizing agent in the CMP slurry composition for polishing a tungsten pattern wafer is included in an amount of 0.01 weight% to 20 weight%.
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11. A tungsten polishing method characterized by including the step of polishing tungsten using a CMP slurry composition for polishing a tungsten pattern wafer according to any one of claims 1, 2, 8, or 9.

Description

CMP slurry composition for polishing tungsten pattern wafer and method for polishing tungsten pattern wafer using the same The present invention relates to a CMP slurry composition for polishing a tungsten pattern wafer and a method for polishing a tungsten pattern wafer using the same. More specifically, the present invention relates to a CMP slurry composition for polishing a tungsten pattern wafer that can improve the flatness of the tungsten pattern wafer and reduce the corrosion rate, and a method for polishing a tungsten pattern wafer using the same. Chemical mechanical polishing (CMP) compositions and methods for polishing (or planarizing) the surface of a substrate are widely known in the relevant art field. A polishing composition for polishing a metal layer (e.g., tungsten) on a semiconductor substrate may include abrasive particles suspended in an aqueous solution and a chemical accelerator, such as an oxidizing agent, a catalyst, etc. The process of polishing a metal layer with a CMP composition proceeds in the following steps: polishing only the initial metal layer, polishing the metal layer and the barrier layer, and polishing the metal layer, the barrier layer, and the oxide film. In this specification, singular expressions include plural expressions unless the context clearly indicates otherwise. In this specification, terms such as "include" or "have" mean that the features or components described in the specification exist, and do not preclude the possibility that one or more other features or components may be added. In interpreting the components, they are interpreted to include a margin of error even in the absence of a separate explicit statement. In this specification, "a to b" indicating a numerical range is defined as "≥a and ≤b". In this specification, * indicates a bonding site with an adjacent atom. The inventors confirmed that by including a dendritic poly(amidoamine) containing an amino group at the terminal end in a CMP slurry composition for polishing a tungsten pattern wafer containing an abrasive, the flatness of the tungsten pattern wafer can be improved and the corrosion rate reduced, and thus completed the present invention. A CMP slurry composition for polishing a tungsten pattern wafer according to one aspect of the present invention (hereinafter also referred to as the 'CMP slurry composition') may comprise (A) a solvent, (B) an abrasive, and (C) a resinous poly(amidoamine) having an amino group at the end. Below, each component is explained in more detail. (A) Solvent A solvent according to one embodiment of the present invention can reduce friction when polishing a tungsten pattern wafer with an abrasive. In a specific embodiment, the solvent may be a polar solvent, a non-polar solvent, or a combination thereof, and may be, for example, water (e.g., ultrapure water, deionized water, etc.), organic amine, organic alcohol, organic alcoholamine, organic ether, organic ketone, etc. According to one embodiment, the solvent may be ultrapure water or deionized water, but is not limited thereto. In a specific example, the solvent may be included as a remainder in the CMP slurry composition. (B) Abrasive An abrasive according to one embodiment of the present invention can polish a tungsten pattern wafer at a high polishing speed. In a specific embodiment, the abrasive may be, for example, abrasive particles of an oxide of a metal or a non-metal. The abrasive may include, for example, one or more of silica, alumina, ceria, titania, and zirconia. According to one embodiment, the abrasive may be silica (for example, colloidal silica), but is not limited thereto. In a specific example, the abrasive is a spherical or non-spherical particle, and the average particle size (D 50 ) of the primary particle may be 10 nm to 200 nm, for example, 20 nm to 180 nm, specifically 30 nm to 150 nm. Within this range, the tungsten pattern wafer may be polished at a higher polishing speed, but is not limited thereto. Here, 'average particle size (D 50 )' refers to a conventional particle size known to a person skilled in the art, and may refer to the particle size of the abrasive particle corresponding to 50 volume% when the abrasive particles are distributed in order from minimum to maximum based on volume. In a specific example, the abrasive may be included in the CMP slurry composition in an amount of 0.001 wt% to 20 wt%, for example, 0.01 wt% to 15 wt%, specifically 0.05 wt% to 10 wt%, more specifically 0.1 wt% to 8 wt%. Within this range, the tungsten pattern wafer can be polished at a higher polishing speed, and the dispersion stability of the CMP slurry composition may be excellent, but is not limited thereto. (C) Resinous poly(amidoamine) A dendritic poly(amidoamine) according to one embodiment of the present invention comprises an amino group ( -NH2 ) at the terminal. By including a dendritic poly(amidoamine) (hereinafter also referred to as 'dendritic poly(amidoamine)') having an amino