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KR-102963651-B1 - METHOD FOR FORMING OPTICAL PROXIMITY CORRECTION MODEL AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING THE SAME

KR102963651B1KR 102963651 B1KR102963651 B1KR 102963651B1KR-102963651-B1

Abstract

The present invention provides a method for forming an optical proximity correction model comprising: acquiring a scanning electron microscope image which is an average image of a plurality of images taken with a scanning electron microscope and a geographic distribution system (GDS) image which is an image of a designed layout; aligning the SEM image and the GDS image; performing image filtering on the SEM image; extracting a contour from the SEM image; and verifying the contour, wherein the verification of the contour is performed through a genetic algorithm, and the variables of the genetic algorithm include first parameters regarding image alignment, second parameters regarding image filtering, and third parameters regarding CD (critical dimension) measurement, and a method for manufacturing a semiconductor device including the same.

Inventors

  • 강민철
  • 여상철
  • 이수용

Assignees

  • 삼성전자주식회사

Dates

Publication Date
20260513
Application Date
20210827

Claims (10)

  1. Acquiring an SEM image, which is the average of multiple images captured by a scanning electron microscope, and a GDS image, which is an image of the designed layout; Aligning the above SEM image and the above GDS image; Performing image filtering on the above SEM image; Extracting contours from the above SEM image; and Includes verifying the above contour, The verification of the above contour is performed through a genetic algorithm, and The variables of the above genetic algorithm include first parameters regarding image alignment, second parameters regarding image filtering, and third parameters regarding CD (critical dimension) measurement, and Verifying the above contour through the above genetic algorithm is: Preparing candidate solutions represented by chromosomes; Calculating the goodness of fit of the above candidate solutions; Determining whether to terminate based on the result of the fitness calculation; and If not terminated, it includes forming offspring chromosomes by performing parent chromosome selection, crossover operations, and mutation operations, and A method for forming an optical proximity correction model in which each of the above candidate solutions includes the CD of the contour obtained according to the above variables of the above genetic algorithm.
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  3. In Article 1, A method for forming an optical proximity correction model, wherein determining whether to terminate the above involves determining whether the rms(root-mean-square) value of the ΔCD matching values expressed by [Mathematical Formula 1] below is smaller than a predetermined reference value. [Mathematical Formula 1] ΔCD matching = CD contour - CD ref Here, the CD contour is the CD value measured from the contour extracted from the SEM image, and the CD ref is the reference CD value measured by the measuring equipment.
  4. In Article 1, A method for forming an optical proximity correction model in which the above image alignment is performed by moving the SEM image based on the center of mass of a pattern located in the center of the SEM image.
  5. In Article 1, The above image filtering includes processing the SEM image and background image to form a result image, wherein The above background image is a binary image, and The above result image is a method for forming an optical proximity correction model having distinct contours.
  6. In Article 1, A method for forming an optical proximity correction model, comprising measuring CD values from a plurality of pixels within a measurement range, selecting some of the plurality of pixels, and calculating the average of the CD values measured from the selected pixels.
  7. Designing a layout; Performing optical proximity correction on the designed layout above; and The method includes forming photoresist patterns on a substrate by a photolithography process using a photomask produced with the corrected layout, wherein The above optical proximity correction is: Forming an optical proximity correction model; Correcting the optical proximity correction model according to the simulation results of the optical proximity correction model; and It includes verifying the corrected optical proximity correction model, and Forming the above optical proximity correction model is: Acquiring an SEM image, which is the average image of a plurality of images of the photoresist pattern captured by a scanning electron microscope, and a GDS image, which is an image of the layout; Aligning the above SEM image and the above GDS image; Performing image filtering on the above SEM image; Extracting contours from the above SEM image; and Includes verifying the above contour, The verification of the above contour is performed through a genetic algorithm, and The variables of the above genetic algorithm include first parameters regarding image alignment, second parameters regarding image filtering, and third parameters regarding CD (critical dimension) measurement, and Verifying the above contour through the above genetic algorithm is: Preparing candidate solutions represented by chromosomes; Calculating the goodness of fit of the above candidate solutions; Determining whether to terminate based on the result of the fitness calculation; and If not terminated, it includes forming offspring chromosomes by performing parent chromosome selection, crossover operations, and mutation operations, and A method for manufacturing a semiconductor device in which each of the above candidate solutions includes the CD of the contour obtained according to the above variables of the above genetic algorithm.
  8. In Article 7, The above photolithography process is a method for manufacturing a semiconductor device using extreme ultraviolet (EUV).
  9. In Article 7, Forming an active region on the above substrate; Forming a word line crossing the active region and a bit line intersecting the word line; Forming a bit line contact between the active region and the bit line; Forming node contacts adjacent to both sides of the above bit line; and It includes forming an information storage structure on the above node contact, A method for manufacturing a semiconductor device in which the above photoresist pattern defines an opening for forming the bit line contact and the node contact.
  10. In Article 7, Forming a stacked structure comprising interlayer insulating films and gate electrodes that are alternately and repeatedly stacked on the substrate; and The method includes forming vertical channel structures within vertical channel holes penetrating the above-mentioned laminated structure, wherein A method for manufacturing a semiconductor device in which the above photoresist pattern defines an opening for forming the above vertical channel holes.

Description

Method for forming an optical proximity correction model and method for manufacturing a semiconductor device including the same The present invention relates to a method for manufacturing a semiconductor device, and more specifically, to a method for manufacturing a semiconductor device comprising a method for forming an optical proximity correction (OPC) model. Due to characteristics such as miniaturization, multifunctionality, and/or low manufacturing costs, semiconductor devices are gaining prominence as important elements in the electronics industry. Semiconductor devices can be classified into semiconductor memory devices that store logical data, semiconductor logic devices that process logical data, and hybrid semiconductor devices that include both memory and logic elements. As the electronics industry advances, demands regarding the characteristics of semiconductor devices are steadily increasing. For example, there is a growing demand for high reliability, high speed, and/or multifunctionality. To meet these requirements, the internal structures of semiconductor devices are becoming increasingly complex, and semiconductor devices are becoming more highly integrated. FIG. 1 is a block diagram illustrating a computer system for performing semiconductor design according to embodiments of the present invention. FIG. 2 is a flowchart for explaining the design and manufacturing method of a semiconductor device according to embodiments of the present invention. FIG. 3 is a conceptual diagram for explaining a photolithography system using a photomask fabricated according to embodiments of the present invention. FIG. 4 is a conceptual diagram for explaining the layout according to embodiments of the present invention. FIG. 5 is a conceptual diagram illustrating the process of dividing the contour of the designed layout of FIG. 4 into multiple segments in optical proximity correction. Figure 6 is a conceptual diagram illustrating a layout corrected by the optical proximity correction of Figure 5. Figure 7 is a conceptual diagram illustrating a photomask produced based on the corrected layout of Figure 6. FIG. 8 is a conceptual diagram illustrating the printing of a circuit pattern on a substrate using the photomask of FIG. 7. FIGS. 9, FIGS. 10 and FIGS. 12 are flowcharts for explaining specific processes of optical proximity correction according to embodiments of the present invention. FIGS. 11a to 11d are conceptual diagrams for specifically explaining image filtering among the specific processes of optical proximity correction according to embodiments of the present invention. FIGS. 13 to 15 are conceptual diagrams for explaining a genetic algorithm used in a method for forming an optical proximity correction model according to embodiments of the present invention. FIGS. 16a, FIGS. 16b, FIGS. 17a, and FIGS. 17b are conceptual diagrams for explaining specific processes of a method for forming an optical proximity correction model according to embodiments of the present invention. FIGS. 18a and FIGS. 19a are plan views for explaining a method for manufacturing a semiconductor device including a method for forming an optical proximity correction model according to embodiments of the present invention and a semiconductor device manufactured thereby. FIGS. 18b and FIGS. 19b are cross-sectional views for explaining a method for manufacturing a semiconductor device including a method for forming an optical proximity correction model according to embodiments of the present invention and a semiconductor device manufactured thereby, corresponding to the cross-section of FIG. 18a cut along the line I-I' and the cross-section of FIG. 19a cut along the line II-II', respectively. Hereinafter, a method for forming an optical proximity correction model according to embodiments of the present invention and a method for manufacturing a semiconductor device including the same will be described in detail with reference to the drawings. FIG. 1 is a block diagram illustrating a computer system for performing semiconductor design according to embodiments of the present invention. Referring to FIG. 1, the computer system may include a CPU (10), a working memory (30), an input/output device (50), and an auxiliary storage device (70). The computer system may be provided as a dedicated device for layout design of the present invention. The computer system may be equipped with various design and verification simulation programs. The CPU (10) can execute software (applications, operating systems, device drivers) to be executed in a computer system. The CPU (10) can execute an operating system (OS, not shown) loaded into working memory (30). The CPU (10) can execute various applications to be run on the operating system (OS). For example, the CPU (10) can execute a layout design tool (32) and/or an OPC tool (34) loaded into working memory (30). An operating system (OS) or applications may be loaded into the working memory (30). When bo