KR-102963675-B1 - SUBSTRATE TREATMENT APPARATUS WITH VIRTUAL DUMMY WAFER FUNCTION AND SUBSTRATE TREATMENT METHOD

Abstract

An example of a substrate processing device comprises a chamber, a substrate support stage located inside the chamber, a lifting device for moving the substrate support stage up and down, a gate valve provided between the chamber and an adjacent chamber adjacent to the chamber, and a chamber state controller, wherein the chamber state controller comprises a processor and a memory, and the memory is configured to cause the processor to execute a program stored in the memory or includes a dedicated circuit to move the lifting device and the gate valve in a state where no substrate is present in the chamber before the next substrate processing is performed in the chamber.

Inventors

• 우메오카 요시유키

Assignees

• 에이에스엠 아이피 홀딩 비.브이.

Dates

Publication Date

20260511

Application Date

20220503

Priority Date

20210507

Claims (17)

1. As a substrate processing device, Chamber; A substrate support stage located within the chamber above; A lifting device for moving the above substrate support stage up and down; A gate valve provided between the chamber and an adjacent chamber adjacent to the chamber; and The chamber state controller includes a processor and a memory, wherein the chamber state controller is configured to cause the processor to execute a program stored in the memory or includes a dedicated circuit to move the lifting device and the gate valve in a state where no substrate is present in the chamber before the next substrate processing is performed in the chamber, and The chamber state controller executes a dummy pre-recipe, a dummy main recipe, and a dummy post-recipe having the same contents as the pre-recipe, main recipe, and post-recipe used in the next substrate processing when there is no substrate in the chamber before the next substrate processing is performed in the chamber, and A substrate processing device, wherein the step of moving the lifting device and moving the gate valve in a state where no substrate is present in the chamber is performed between the process of the dummy pre-recipe and the dummy main recipe, and between the process of the dummy main recipe and the dummy post-recipe.
2. A substrate processing device according to claim 1, wherein if the idle state in which the substrate is not processed within the chamber exceeds a predetermined period, the chamber state controller moves the lifting device and moves the gate valve while the substrate is not present within the chamber.
3. A substrate processing device according to claim 1, wherein the chamber state controller moves the lifting device and moves the gate valve in the same manner as the movement of the lifting device associated with the next substrate processing and the movement of the gate valve associated with the next substrate processing, in a state where the substrate is not present in the chamber.
4. A substrate processing device according to claim 1, wherein the chamber state controller performs the step of moving the lifting device and moving the gate valve multiple times while the substrate is not present in the chamber.
5. In claim 1, the adjacent chamber additionally includes a wafer transfer robot, A substrate processing device in which the chamber state controller moves the lifting device and moves the gate valve in a state where no substrate is present, and the wafer transfer robot is prohibited from moving in a state where the wafer is not transported by the wafer transfer robot.
6. In claim 1, a QCM having four chambers (the chambers are one of the components); and The rotating arm provided in the above QCM is additionally included, The above chamber state controller is a substrate processing device that rotates and moves the rotating arm up and down before the next substrate processing is performed within the chamber.
7. In claim 6, the chamber state controller rotates and moves the rotating arm up and down in the same manner as the movement of the rotating arm associated with the next substrate processing before the next substrate processing is performed within the chamber, a substrate processing device.
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9. In paragraph 1, The above preliminary recipe is a recipe for performing a preliminary coating treatment or a cleaning treatment, and The above post-recipe is a substrate processing device, which is a process recipe for performing cleaning treatment or temperature maintenance.
10. In claim 1, the main recipe is a recipe for forming an epitaxial film on a substrate, a substrate processing apparatus.
11. A substrate processing apparatus according to claim 10, further comprising a heater for raising the temperature within the chamber.
12. A substrate processing apparatus according to claim 1, wherein the main recipe is a recipe for processing the substrate by PECVD, PEALD, or thermal ALD.
13. A substrate processing apparatus that further comprises a stage heater for raising the temperature of the substrate support stage in claim 12.
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Description

Substrate Treatment Apparatus with Virtual Dummy Wafer Function and Substrate Treatment Method The described example relates to a substrate processing device and a substrate processing method. When a job is executed from an idle state where the process chamber is not operating, the wafer to be processed first is handled before the chamber is fully prepared; consequently, a difference in processing quality occurs between the first wafer and the wafers to be processed subsequently. To reduce this difference, it is necessary to process the wafers after the chamber has been prepared in advance. Some examples described herein can solve the aforementioned problems. Some examples described herein can provide a substrate processing apparatus and a substrate processing method that can prepare the state of the chamber before an actual wafer is introduced into the chamber and reduce or avoid differences in processing quality caused by the processing order of the wafer. In some examples, a substrate processing device comprises a chamber, a substrate support stage located inside the chamber, a lifting device for moving the substrate support stage up and down, a gate valve provided between the chamber and an adjacent chamber adjacent to the chamber, and a chamber state controller, wherein the chamber state controller comprises a processor and a memory, and the memory is configured to cause the processor to execute a program stored in the memory or includes a dedicated circuit to move the lifting device and the gate valve in a state where no substrate is present in the chamber before the next substrate processing is performed in the chamber. Figure 1 is a diagram showing an example of the configuration of a substrate processing device. Figure 2 shows an example of the configuration of a reactor chamber. Figure 3 is a flowchart regarding an example of VDW usage. Figure 4 is a flowchart showing a specific example of VDW. Figure 5 shows an example of changes in temperature, pressure, and atmosphere over time within the chamber. Figure 6 is a functional block diagram of the controller. FIG. 7a is a diagram showing a processing circuit when the processing circuit is a dedicated hardware circuit. Figure 7b shows an example of a controller configuration when the processing circuit is a CPU. Figure 8 shows another example of a substrate processing device. Figure 9 shows another example of a substrate processing device. A substrate processing apparatus and a substrate processing method will be described below with reference to the drawings. Identical or corresponding components are designated by the same reference number, and in some cases, a repetitive description thereof is omitted. Implementation example FIG. 1 is a diagram showing an example configuration of a substrate processing device (10). This substrate processing device (10) includes a plurality of loading ports. In the example of FIG. 1, loading ports (12, 14, and 16) are provided. Here, the number of loading ports is set to three, but may be two or four or more. A front end module (18) is provided adjacent to the plurality of loading ports (12, 14, and 16). The front end module (18) includes, for example, a fan filter unit (FFU) and is provided to transport substrates under atmospheric pressure. A first wafer transfer device (19) is provided in the front end module (18). According to one example, the first wafer transfer device (19) is a robot for transporting wafers. The loading ports (12, 14, and 16), the front end module (18), and the first wafer transfer device (19) are collectively referred to as an equipment front end module (EFEM) or an enclosure. A first load lock chamber (first LLC) (20) and a second load lock chamber (second LLC) (30) are provided adjacent to the front end module (18). The first LLC (20) and the second LLC (30) are connected to a vacuum device and can be set to atmospheric pressure or vacuum. In one example, the first LLC (20) and the second LLC (30) are two independent chambers and prevent gas from moving between them. For informational purposes, two load lock chambers are provided in FIG. 1, but three or more load lock chambers may be provided. A gate valve (22) is provided between the first LLC (20) and the front end module (FEM) (18). A gate valve (32) is provided between the second LLC (30) and the FEM (18). A wafer handling chamber (WHC) (40) is provided adjacent to the first LLC (20) and the second LLC (30). The WHC (40) has a second wafer transfer device (41). In one example, the second wafer transfer device (41) is a robot for transferring wafers. A gate valve (24) is provided between the first LLC (20) and the WHC (40). A gate valve (34) is provided between the second LLC (30) and the WHC (40). Reactor chambers (42, 44, 46 and 48) are each adjacent to the WHC (40) through gate valves (42a, 44a, 46a and 48a). The WHC (40) contacts the WHC (60) through the pass chamber (50). In one example, the pass chamber (50) includes an upper pass