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KR-102963772-B1 - Substrate support apparatus and substrate process apparatus including the same

KR102963772B1KR 102963772 B1KR102963772 B1KR 102963772B1KR-102963772-B1

Abstract

The present invention relates to a substrate support device and a substrate processing device including the same, and more specifically, to a substrate support device to which an RF power source is applied and a substrate processing device including the same. The present invention discloses a substrate support device comprising: a heater unit (100) for heating a substrate (1); an RF power unit (200) disposed above the heater unit (100) to which RF power is applied; and a support shaft (500) that penetrates the process chamber (10) to support the heater unit (100), wherein the RF power unit (200) has a thermal diffusion coating layer (210) formed on its lower surface in contact with the upper surface of the heater unit (100).

Inventors

  • 정태환
  • 차형진

Assignees

  • 주식회사 원익아이피에스

Dates

Publication Date
20260512
Application Date
20220928

Claims (20)

  1. A substrate support device installed in a process chamber (10) that forms a processing space (S) in which a substrate (1) is processed, and which supports the substrate (1). A heater unit (100) for heating the above substrate (1); An RF power unit (200) positioned above the heater unit (100) to which RF power is applied; It includes a support shaft (500) that supports the heater part (100) by penetrating the process chamber (10), and The above RF power unit (200) is, A heat diffusion coating layer (210) is formed on the bottom surface in contact with the upper surface of the heater part (100), and The above RF power unit (200) is, It includes an RF electrode (220) connected to an RF rod (240) penetrating the heater part (100) to receive RF power, and a first base part (230) installed surrounding at least a portion of the RF electrode (220). A substrate support device characterized by additionally including a cover portion (300) that covers the upper surface of the RF power portion (200) and on which the substrate (1) is seated.
  2. In claim 1, The heater unit (100) above is, A substrate support device characterized by including a heater plate (120) coupled to the RF power unit (200) at the bottom and a heater (110) provided inside the heater plate (120).
  3. In claim 2, The heater (110) above is, A substrate support device characterized by being a heating wire provided inside the heater plate (120) and generating heat upon power application.
  4. In claim 2, The heater (110) above is, A substrate support device characterized by including a heating channel formed inside the heater plate (120) and a heat medium moving along the heating channel.
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  6. A substrate support device installed in a process chamber (10) that forms a processing space (S) in which a substrate (1) is processed, and which supports the substrate (1). A heater unit (100) for heating the above substrate (1); An RF power unit (200) positioned above the heater unit (100) to which RF power is applied; It includes a support shaft (500) that supports the heater part (100) by penetrating the process chamber (10), and The above RF power unit (200) is, A heat diffusion coating layer (210) is formed on the bottom surface in contact with the upper surface of the heater part (100), and The above RF power unit (200) is, It includes an RF electrode (220) connected to an RF rod (240) penetrating the heater part (100) to receive RF power, and a first base part (230) installed surrounding at least a portion of the RF electrode (220). The above first base part (230) is, A substrate support device characterized by having an insertion groove formed on the upper surface to accommodate the RF electrode (220).
  7. In claim 1, The above RF load (240) is, A substrate support device characterized by including a first RF rod (242) that is connected to an external RF power source and is fixedly installed through the heater unit (100), and a second RF rod (241) that is connected to the RF electrode (220) and is fixedly installed in the RF power unit (200) so as to be connected to the first RF rod (242) according to the coupling between the RF power unit (200) and the heater unit (100).
  8. A substrate support device installed in a process chamber (10) that forms a processing space (S) in which a substrate (1) is processed, and which supports the substrate (1). A heater unit (100) for heating the above substrate (1); An RF power unit (200) positioned above the heater unit (100) to which RF power is applied; It includes a support shaft (500) that supports the heater part (100) by penetrating the process chamber (10), and The above RF power unit (200) is, A heat diffusion coating layer (210) is formed on the bottom surface in contact with the upper surface of the heater part (100), and The above RF power unit (200) is, It includes an RF electrode (220) connected to an RF rod (240) penetrating the heater part (100) to receive RF power, and a first base part (230) installed surrounding at least a portion of the RF electrode (220). The above first base part (230) is, A substrate support device characterized by being metal.
  9. A substrate support device installed in a process chamber (10) that forms a processing space (S) in which a substrate (1) is processed, and which supports the substrate (1). A heater unit (100) for heating the above substrate (1); An RF power unit (200) positioned above the heater unit (100) to which RF power is applied; It includes a support shaft (500) that supports the heater part (100) by penetrating the process chamber (10), and The above RF power unit (200) is, A heat diffusion coating layer (210) is formed on the bottom surface in contact with the upper surface of the heater part (100), and The above RF power unit (200) is, It includes an RF electrode (220) connected to an RF rod (240) penetrating the heater part (100) to receive RF power, and a first base part (230) installed surrounding at least a part of the RF electrode (220). A substrate support device characterized in that the difference between the thermal expansion coefficient of the first base part (230) and the thermal expansion coefficient of the thermal diffusion coating layer (210) is -3× 10⁻⁶ /K or more and 3× 10⁻⁶ /K or less.
  10. A substrate support device installed in a process chamber (10) that forms a processing space (S) in which a substrate (1) is processed, and which supports the substrate (1). A heater unit (100) for heating the above substrate (1); An RF power unit (200) positioned above the heater unit (100) to which RF power is applied; It includes a support shaft (500) that supports the heater part (100) by penetrating the process chamber (10), and The above RF power unit (200) is, A heat diffusion coating layer (210) is formed on the bottom surface in contact with the upper surface of the heater part (100), and The above RF power unit (200) is, It includes an RF electrode (220) connected to an RF rod (240) penetrating the heater part (100) to receive RF power, and a first base part (230) installed surrounding at least a portion of the RF electrode (220). The above first base part (230) is, A substrate support device characterized by being made of at least one of titanium (Ti), invar, and nickel (Ni).
  11. A substrate support device installed in a process chamber (10) that forms a processing space (S) in which a substrate (1) is processed, and which supports the substrate (1). A heater unit (100) for heating the above substrate (1); An RF power unit (200) positioned above the heater unit (100) to which RF power is applied; It includes a support shaft (500) that supports the heater part (100) by penetrating the process chamber (10), and The above RF power unit (200) is, A heat diffusion coating layer (210) is formed on the bottom surface in contact with the upper surface of the heater part (100), and The above RF power unit (200) is, It includes an RF electrode (220) connected to an RF rod (240) penetrating the heater part (100) to receive RF power, and a first base part (230) installed surrounding at least a portion of the RF electrode (220). The above thermal diffusion coating layer (210) is, A substrate support device characterized by including a first coating layer (211) coated on the bottom surface of the first base portion (230), and a second coating layer (212) coated on the bottom surface of the first coating layer (211) with a material different from that of the first coating layer (211).
  12. In claim 11, The first coating layer (211) above is, A substrate support device characterized by including a metal to shield radiated RF.
  13. In claim 12, The first coating layer (211) above is, A substrate support device characterized by including nickel (Ni).
  14. In claim 11, The above second coating layer (212) is, A substrate support device characterized by having an insulating layer that electrically insulates the RF power unit (200) and the heater unit (100).
  15. In claim 14, The above second coating layer (212) is, A substrate support device characterized by being made of ceramic material.
  16. In claim 11, The above second coating layer (212) is, A substrate support device characterized by a thickness of 400㎛ or more and 600㎛ or less.
  17. In claim 1, The above RF power unit (200) is, A substrate support device characterized by additionally including a side shield portion (250) that surrounds the side to prevent side exposure of the first base portion (230) and the thermal diffusion coating layer (210).
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  19. In claim 1, The above cover portion (300) is, A substrate support device characterized by including a second base part (310) installed to surround at least a portion of the RF electrode (220) from the upper side together with the first base part (230), and a shield coating layer (320) coated on the exposed surface of the processing space (S) side of the second base part (310).
  20. In claim 1, A substrate support device further comprising an electrostatic chuck (400) including an electrostatic electrode (410) for applying electrostatic force to a substrate (1) installed on the cover portion (300) and seated on the upper portion, and an electrostatic rod (420) connected between the electrostatic electrode (410) and an external power source to transmit DC power to the electrostatic electrode (410).

Description

Substrate support apparatus and substrate process apparatus including the same The present invention relates to a substrate support device and a substrate processing device including the same, and more specifically, to a substrate support device to which an RF power source is applied and a substrate processing device including the same. Generally, plasma-based processes are performed through a substrate processing device, and such plasma-based processes can perform substrate processing, such as deposition or etching, at a high speed at a low process temperature by activating the process gas. In order to create such a plasma environment, a ground electrode is provided on either a substrate support member on which a substrate is supported or a gas injection member facing it, and an RF electrode to which an RF power source is applied is provided on the other, thereby forming plasma between the substrate support member and the gas injection member so as to perform substrate processing. In addition, the substrate support member supporting the substrate is equipped with a heater for heating the substrate and the processing area to create an appropriate temperature atmosphere for substrate processing, and a temperature sensor for heater control to appropriately adjust the heater temperature is also provided. The conventional method of connecting ground to the substrate support and applying RF power to the gas injection part has a problem in that the plasma density is lower compared to the method of applying RF power to the substrate support, resulting in reduced processing efficiency. Meanwhile, when RF power is applied to the substrate support, there is a problem in that the heater and temperature sensor provided inside are affected by noise from the application of RF power, making control difficult. Furthermore, since RF shielding and electrical insulation are not performed in the Z-axis direction of the substrate support, there is a problem in that the lifting drive unit that raises and lowers the substrate support is damaged and the stability of the surrounding environment and configuration is compromised. To improve upon these issues, an insulating structure was assembled with a ceramic plate inserted between the heater and the RF electrode to enable RF shielding and electrical insulation; however, the application of the ceramic plate causes a rapid decrease in the heat transfer efficiency of the heater toward the substrate and processing space. Furthermore, since the conventional method involves exposing the RF electrode to the substrate support surface, there is a problem in that it is difficult to use RF power efficiently due to the occurrence of discharge phenomena when using high power. FIG. 1 is a cross-sectional view schematically showing the appearance of a substrate processing apparatus according to the present invention. FIG. 2 is a cross-sectional view showing the appearance of a substrate support device among the substrate processing devices according to FIG. 1. FIG. 3 is a cross-sectional view showing another embodiment of a substrate support device among the substrate processing devices according to FIG. 1. FIG. 4 is a cross-sectional view showing the disassembled view of a substrate support device among the substrate processing devices according to FIG. 3. The following describes a substrate support device and a substrate processing device including the same according to the present invention with reference to the attached drawings. A substrate processing device according to the present invention comprises, as shown in FIG. 1, a process chamber (10) that forms a processing space (S) in which a substrate (1) is processed; a substrate support device (30) that supports the substrate (1) within the process chamber (10); and a gas injection unit (20) that is installed opposite to the substrate support device (30) and sprays process gas toward the substrate (1). In addition, the substrate processing device according to the present invention may further include a lifting drive unit (40) for lifting the substrate support device (30). Here, substrate processing can be various processes, such as a deposition process that forms a thin film on the substrate surface and an etching process that etches. In addition, the substrates subject to processing include all substrates requiring etching, deposition, etc., such as LCD panel substrates and OLED substrates. The above process chamber (10) is configured to form a processing space (S) in which a substrate (1) is processed, and various configurations are possible. For example, the process chamber (10) may be configured to include a chamber body (11) and an upper lead (12) that are detachably coupled to each other to form a processing space (S). The above chamber body (11) can be configured in various ways depending on the design and is formed with at least one gate (13) that is opened and closed by a gate valve so that a substrate (1) can be inserted and remov