KR-102963804-B1 - NOVEL COMPOUNDS, PREPARING METHOD OF USING THE SAME, PRECURSOR COMPOSITION INCLUDING THE SAME, AND PREPARING METHOD OF THIN FILM USING THE SAME

Abstract

The present invention relates to a compound capable of thin film deposition, specifically a novel compound applicable to Atomic Layer Deposition (ALD) or Chemical Vapor Deposition (CVD) and having excellent reactivity, volatility, and thermal stability, and to a method for preparing said compound, a precursor compound comprising said compound, and a method for preparing a thin film using said precursor compound.

Inventors

• 이현경
• 박관현
• 김현기

Assignees

• 주식회사 한솔케미칼

Dates

Publication Date

20260513

Application Date

20240808

Claims (9)

1. A compound represented by the following chemical formula 1. [Chemical Formula 1] In the above chemical formula 1, M is Al, In, or Ga, and R 5 and R 10 are each independently hydrogen or, substituted or unsubstituted linear or branched hydrocarbon groups having 1 to 6 carbon atoms, and R1 to R4 and R6 to R9 are each independently hydrogen or, substituted or unsubstituted, linear or branched hydrocarbon groups having 1 to 3 carbon atoms.
2. In paragraph 1, R1 to R4 and R6 to R9 are each independently hydrogen, a methyl group, an ethyl group, an n-propyl group, or an iso-propyl group, compound.
3. In paragraph 1, R 5 and R 10 are, respectively, independently hydrogen, methyl group, ethyl group, n-propyl group, iso-propyl group, n-butyl group, iso-butyl group, sec-butyl group, tert-butyl group, n-pentyl group, iso-pentyl group, neo-pentyl group, sec-pentyl group, tert-pentyl group, hexyl group, or iso-hexyl group, compound.
4. Comprising a compound of any one of paragraphs 1 to 3, Precursor.
5. A step comprising introducing a precursor containing a compound of any one of claims 1 to 3 into a reactor, Method for manufacturing a thin film.
6. In paragraph 5, The method for manufacturing the above thin film includes Atomic Layer Deposition (ALD) or Chemical Vapor Deposition (CVD). Method for manufacturing a thin film.
7. In paragraph 5, A step further comprising introducing an oxidizing agent, a nitrating agent, a reducing agent, or a combination thereof into a reactor, Method for manufacturing a thin film.
8. In paragraph 5, The above thin film comprises an oxide film, a nitride film, a metal film, or a combination thereof. Method for manufacturing a thin film.
9. A first step of preparing a compound represented by the following chemical formula 4 by reacting a compound represented by the following chemical formula 2 with a compound represented by the following chemical formula 3; and A second step of preparing a compound represented by the following chemical formula 6 by reacting a compound represented by the above chemical formula 4 with a compound represented by the following chemical formula 5; comprising Method for preparing a compound. [Chemical Formula 2] [Chemical Formula 3] MX 3 [Chemical Formula 4] [Chemical Formula 5] [Chemical Formula 6] In the above chemical formula 2, R 11 to R 21 are each independently hydrogen or, substituted or unsubstituted linear or branched hydrocarbon groups having 1 to 3 carbon atoms, and In the above chemical formulas 2 to 4, and the above chemical formula 6, M is Al, In, or Ga, and X is a halogen element, and In the above chemical formulas 5 and 6, R 27 and R 32 are each independently hydrogen or, substituted or unsubstituted linear or branched hydrocarbon groups having 1 to 6 carbon atoms, and R 23 to R 26 and R 28 to R 31 are each independently hydrogen, substituted or unsubstituted linear or branched hydrocarbon groups having 1 to 3 carbon atoms.

Description

Novel compounds, preparation method thereof, precursor compound including the same, and method for preparing a thin film using the same The present invention relates to a novel compound capable of thin film deposition via Atomic Layer Deposition (ALD) and Chemical Vapor Deposition (CVD), a method for preparing said compound, a precursor compound comprising said novel compound, and a method for preparing a thin film using said precursor compound. As semiconductor devices become more highly integrated and miniaturized, it is becoming increasingly important to form metal and metal oxide thin films of uniform thickness for application in various technologies such as microelectronics, magnetic information storage, and catalysts. Chemical Vapor Deposition (CVD) or Atomic Layer Deposition (ALD) is used to fabricate metal and metal oxide thin films. In particular, ALD enables the formation of desired thin films by sequentially injecting and removing reactive materials into a chamber, allows for easy compositional control, and can form films of uniform thickness. Furthermore, ALD offers excellent step coverage, which is advantageous for growing thin films uniformly on complex and sophisticated devices. In order to manufacture thin films using atomic layer deposition, precursor compounds play an important role. There is a growing need to develop precursor compounds that are structurally stable and capable of forming thin films over a wide temperature range (ALD window) during the ALD/CVD process, through the design of new structures for novel precursor compounds that possess high volatility, high thermal stability, and high reactivity with various oxidizing agents, nitriding agents, or reducing agents. To date, the development of precursor compounds using various ligands has been ongoing, and representative known ligands include halogens, alkoxides, cyclopentadienes, beta-diketonates, amides, and amidins. However, most known precursor compounds are solid compounds, or they may cause problems such as low volatility or stability, or impurity contamination during thin film deposition. Therefore, there is a need for the development of novel precursor compounds that overcome these drawbacks and enable thin film deposition with excellent step coverage. Figure 1 is a graph showing the results of thermogravimetric analysis (TGA) of the tert-butyl(2-methoxy-2-methylpropyl)amino)bis(dimethylamino)gallium (GaON) compound of Synthesis Example 1 of the present invention. Figure 2 is a graph showing the analysis results according to Differential Scanning Calorimetry (DSC) of the thermal characteristics of the GaON precursor compound of Synthesis Example 1 of the present invention. Figure 3 is a graph showing the change in deposition rate according to the change in process temperature of Example 1 of the present invention. Figure 4 is an image showing the step coverage of a gallium oxide film ( Ga₂O₃ ) prepared according to Example 1 of the present invention , observed by transmission electron microscopy (TEM). Figure 5 is a graph showing the analysis results according to X-ray Reflectometry (XRR) of a gallium oxide film prepared according to Example 1 of the present invention. Figure 6 is a graph showing the analysis results according to X-ray Photoelectron Spectroscopy (XPS) of a gallium oxide film prepared according to Example 1 of the present invention. Figure 7 is a graph showing the results of analyzing the impurity content of a gallium oxide film prepared according to Example 1 of the present invention using a secondary ion mass spectrometer (SIMS). The operation and effects of the invention will be described in more detail below through specific embodiments. However, these embodiments are merely examples of the invention and do not define the scope of the invention. Prior to this, terms and words used in this specification and claims should not be interpreted as being limited to their ordinary or dictionary meanings, but should be interpreted in a meaning and concept consistent with the technical spirit of the invention, based on the principle that the inventor can appropriately define the concept of the terms to best describe his invention. Therefore, it should be understood that the configuration of the embodiments described in this specification is merely one of the most preferred embodiments of the present invention and does not represent all of the technical ideas of the present invention, and that various equivalents and modifications that can replace them may exist at the time of filing this application. In this specification, singular expressions include plural expressions unless the context clearly indicates otherwise. In this specification, terms such as “comprising,” “comprising,” or “having” are intended to specify the existence of the implemented features, numbers, steps, components, or combinations thereof, and should be understood as not precluding the existence or addition of one or more other features, numb