KR-102963822-B1 - ORGANIC THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME AND THIN FILM TRANSISTOR ARRAY PANEL AND ELECTRONIC DEVICE

Abstract

The present invention relates to an organic thin-film transistor comprising a gate electrode, an organic semiconductor layer overlapping the gate electrode, a hydrophilic nanolayer located on the organic semiconductor layer, and a source electrode and a drain electrode electrically connected to the organic semiconductor layer, a method for manufacturing the same, a thin-film transistor array panel, and an electronic device.

Inventors

• 쿠즈모토 야스타카
• 함석규
• 정종원
• 윤영준

Assignees

• 삼성전자주식회사

Dates

Publication Date

20260511

Application Date

20211021

Claims (20)

1. Gate electrode, An organic semiconductor layer having a hydrophobic surface that overlaps with the above gate electrode, A hydrophilic nanolayer located on the above organic semiconductor layer, and Source electrode and drain electrode electrically connected to the above organic semiconductor layer Organic thin-film transistor including
2. In paragraph 1, An organic thin-film transistor in which the hydrophilic nanolayer is in contact with the upper surface, which is the hydrophobic surface of the organic semiconductor layer, and covers all or part of the upper surface of the organic semiconductor layer.
3. In paragraph 1, The above hydrophilic nanolayer comprises a hydrophilic inorganic material, a hydrophilic organic material, a hydrophilic organic-inorganic material, or a combination thereof, in an organic thin film transistor.
4. In Paragraph 3, An organic thin-film transistor in which the above hydrophilic inorganic material, the above hydrophilic organic material, and the above hydrophilic organic-inorganic material are materials that do not dissolve in water.
5. In Paragraph 3, The above hydrophilic inorganic material, the above hydrophilic organic material, and the above hydrophilic organic-inorganic material are an organic thin-film transistor that is an electrical insulator.
6. In paragraph 1, The above hydrophilic nanolayer comprises a metal oxide, a metalloid oxide, or a combination thereof in an organic thin-film transistor.
7. In paragraph 1, An organic thin-film transistor having a hydrophilic nanolayer thickness of 1 nm or more and less than 10 nm.
8. delete
9. Step of forming a gate electrode, A step of forming an organic semiconductor layer overlapping with the gate electrode, and A step of forming a source electrode and a drain electrode electrically connected to the above organic semiconductor layer. Includes, The step of forming the organic semiconductor layer above Step of forming an organic semiconductor thin film having a hydrophobic surface, A step of forming a hydrophilic nanolayer on the hydrophobic surface of the above organic semiconductor thin film, Step of forming a protective intermediate layer on the above hydrophilic nanolayer, The step of photoetching the above protective intermediate layer, the above hydrophilic nanolayer, and the above organic semiconductor thin film, and Step of removing the above protective intermediate layer A method for manufacturing an organic thin-film transistor comprising
10. In Paragraph 9, The step of photoetching the protective intermediate layer, the hydrophilic nanolayer, and the organic semiconductor thin film is Step of applying a photoresist film on the above protective intermediate layer, A step of placing a mask over the photoresist film and exposing a portion of the photoresist film, A step of developing the above photoresist film to form a photoresist pattern, A step of patterning the protective intermediate layer, the hydrophilic nanolayer, and the organic semiconductor thin film using the above photoresist pattern, and Step of removing the above photoresist pattern A method for manufacturing an organic thin-film transistor comprising
11. In Paragraph 10, The above photoresist film is a method for manufacturing an organic thin-film transistor comprising a fluorine-containing photoresist.
12. In Paragraph 9, A method for manufacturing an organic thin-film transistor in which the above protective intermediate layer comprises a different material from the above hydrophilic nanolayer.
13. In Paragraph 12, A method for manufacturing an organic thin-film transistor in which the above protective intermediate layer comprises a water-soluble compound.
14. In Paragraph 13, The above hydrophilic nanolayer comprises a hydrophilic metal oxide, a hydrophilic low-molecular-weight compound, or a combination thereof, and The above hydrophilic metal oxide and the above hydrophilic low-molecular-weight compound are insoluble in water Method for manufacturing an organic thin-film transistor.
15. delete
16. In Paragraph 9, A method for manufacturing an organic thin-film transistor, comprising the step of removing the above-mentioned protective intermediate layer and the step of supplying water to the above-mentioned protective intermediate layer.
17. A thin-film transistor array panel comprising an organic thin-film transistor according to any one of claims 1 to 7.
18. In Paragraph 17, The substrate supporting the above-mentioned organic thin-film transistor is further included, The above substrate is a thin-film transistor array panel that is a stretched substrate.
19. An electronic device comprising an organic thin-film transistor according to any one of claims 1 to 7.
20. An electronic device comprising a thin-film transistor array panel according to paragraph 17.

Description

Organic Thin Film Transistor and Method of Manufacturing the Same, Thin Film Transistor Array Panel and Electronic Device This invention relates to an organic thin-film transistor and a method for manufacturing the same, a thin-film transistor display board, and an electronic device. Display devices such as liquid crystal displays (LCDs), organic light-emitting diode displays (OLEDs), or quantum dot light-emitting diode displays include multiple thin-film transistors for independently switching and/or driving each subpixel. Among these thin-film transistors, research is actively being conducted on organic thin-film transistors (OTFTs) that utilize organic semiconductors, such as small molecules or polymers, instead of inorganic semiconductors like silicon (Si). Organic thin-film transistors are attracting attention as key components for flexible display devices because, due to the properties of organic materials, they can be fabricated in forms such as fibers or films. FIGS. 1 to 8 are cross-sectional views showing examples of organic thin-film transistors according to one embodiment, and FIGS. 9 to 18 are cross-sectional views sequentially showing examples of a method for manufacturing an organic thin-film transistor according to one embodiment, and FIG. 19 is a schematic plan view of a thin-film transistor array panel according to one embodiment. The following embodiments are described in detail so that those skilled in the art can easily implement them. However, the structure actually applied may be implemented in various different forms and is not limited to the embodiments described herein. In the drawing, the thickness is enlarged to clearly represent various layers and regions. When a part such as a layer, film, region, or plate is described as being "on" another part, this includes not only the case where it is "immediately on" another part, but also the case where there is another part in between. Conversely, when a part is described as being "immediately on" another part, it means that there is no other part in between. To clearly explain the embodiments shown in the drawings, parts unrelated to the description have been omitted, and the same reference numerals have been used for identical or similar components throughout the specification. In the following, the terms ‘lower’ and ‘upper’ are used merely for convenience of explanation and do not limit positional relationships. Unless otherwise defined below, the term "substituted" means that a hydrogen atom in a compound is a halogen atom, a hydroxyl group, an alkoxy group, a nitro group, a cyano group, an amino group, an azido group, an amidino group, a hydrazino group, a hydrazono group, a carbonyl group, a carbamyl group, a thiol group, an ester group, a carboxyl group or its salt, a sulfonic acid group or its salt, a phosphoric acid group or its salt, a silyl group, a C1 to C20 alkyl group, a C2 to C20 alkenyl group, a C2 to C20 alkynyl group, a C6 to C30 aryl group, a C7 to C30 arylalkyl group, a C1 to C30 alkoxy group, a C1 to C20 heteroalkyl group, a C3 to C20 heteroaryl group, a C3 to C20 heteroarylalkyl group, a C3 to C30 cycloalkyl group, a C3 to C15 cycloalkenyl group, or a C6 to C15 It means substituted with a substituent selected from a cycloalkynyl group, a C3 to C30 heterocycloalkyl group, and combinations thereof. Unless otherwise defined below, 'hetero' means containing one to four heteroatoms selected from N, O, S, Se, Te, Si and P. In the following, ‘polymer’ includes homopolymers, copolymers, or combinations thereof. In the following, the term 'combination' includes mixtures, composites, or two or more stacked structures. An organic thin-film transistor according to one embodiment will be described below with reference to the drawings. FIGS. 1 to 8 are cross-sectional views showing examples of organic thin-film transistors according to one embodiment. Referring to FIGS. 1 to 8, an organic thin-film transistor (100) according to one embodiment comprises: a gate electrode (124) located on a substrate (110); an organic semiconductor layer (154) overlapping with the gate electrode (124) along the thickness direction of the substrate (110); a hydrophilic nanolayer (155) located on the organic semiconductor layer (154); a gate insulating film (140) located between the gate electrode (124) and the organic semiconductor layer (154); and a source electrode (173) and a drain electrode (175) electrically connected to the organic semiconductor layer (154). The organic thin-film transistor (100) may have a bottom gate structure, a top gate structure, a bottom contact structure, and a top contact structure depending on the position of the gate electrode (124) and/or the channel position of the organic semiconductor layer (154), and may be implemented in various ways by combining these. First, referring to FIG. 1, an organic thin-film transistor (100) according to one example may be an organic thin-film transistor having a bottom gate structur