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KR-102963855-B1 - ELECTRONIC DEVICE FOR DETECTING DEFECTION OF SEMICONDUCTOR PARTS AND METHOD FOR CONTROLLING THE SAME

KR102963855B1KR 102963855 B1KR102963855 B1KR 102963855B1KR-102963855-B1

Abstract

According to one embodiment, the electronic device includes a DC supply, an RF power supply, and at least one processor operatively connected to the DC supply and the RF power supply, and the at least one processor determines a current level between the maximum current at which a semiconductor component can operate and the Absolute Maximum Rating (AMR) current, or an RF power level between the maximum RF power at which a semiconductor component can operate and the Absolute Maximum Rating (AMR) RF power, and when the current level is determined, the DC supply can be controlled to apply a current of the determined current level to the semiconductor component, or when the RF power level is determined, the RF power supply can be controlled to apply an RF power of the determined RF power level to the semiconductor component.

Inventors

  • 이경근
  • 최우성

Assignees

  • 삼성전자주식회사

Dates

Publication Date
20260513
Application Date
20210601

Claims (18)

  1. In electronic devices, DC supply; RF Power Supply, and It includes at least one processor operably connected to the above DC supply and the above RF power supply, The above-mentioned at least one processor is, Determine a current level between the maximum current at which the semiconductor component can operate and the AMR (Absolute Maximum Rating) current, or an RF power level between the maximum RF power at which the semiconductor component can operate and the AMR (Absolute Maximum Rating) RF power, and When the above current level is determined, the DC supply is controlled to apply the current of the determined current level to the semiconductor component, or when the above RF Power level is determined, the RF Power supply is controlled to apply the RF Power of the determined RF Power level to the semiconductor component. An electronic device characterized in that the above current level is determined to be lower than I pp (peak pulse current) based on V rwm (reverse standoff voltage) and P pp (peak pulse power dissipation).
  2. In paragraph 1, The above semiconductor component includes a current source, and The above-mentioned at least one processor is, An electronic device characterized by being configured to control the DC supply to apply a current of the determined current level to the current source.
  3. In paragraph 1, The above semiconductor component includes a diode, and The above-mentioned at least one processor is, An electronic device characterized by being configured to control the DC supply to apply a current of the determined current level to the diode.
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  5. In paragraph 1, The above semiconductor component includes an RF Power Path section, and The above-mentioned at least one processor is, An electronic device characterized by being configured to control the RF Power supply to apply RF Power of the determined RF Power level to the RF Power Path.
  6. In paragraph 5, The above-mentioned at least one processor is, An electronic device characterized by being configured to control the RF Power supply to apply RF Power of the determined RF Power level to the RF Power Path for a period longer than the turn-on time of the transistor included in the RF Power Path.
  7. In paragraph 5, The above-mentioned at least one processor is, An electronic device characterized by being configured to control the RF Power supply to apply RF Power of the determined RF Power level to the RF Power Path when the semiconductor component is in operation.
  8. In paragraph 1, Includes additional power supply, The above semiconductor component includes a voltage source, and The above-mentioned at least one processor is, Determines a voltage level between the maximum operating voltage and the AMR voltage of the above semiconductor component, and An electronic device characterized by being configured to control the power supply to apply a voltage of the above-determined voltage level to the voltage source.
  9. In paragraph 1, The above-mentioned at least one processor is, An electronic device characterized by being configured to detect a defect in a semiconductor component after applying a current of the determined current level or an RF power of the determined RF power level to the semiconductor component.
  10. In a method for controlling an electronic device, An operation for determining a current level between the maximum current at which the semiconductor component can operate and the AMR (Absolute Maximum Rating) current, or an operation for determining an RF Power level between the maximum RF Power at which the semiconductor component can operate and the AMR (Absolute Maximum Rating) RF Power; and When the above current level is determined, the method includes controlling a DC supply to apply a current of the determined current level to the semiconductor component, or when the above RF Power level is determined, controlling an RF Power supply to apply RF Power of the determined RF Power level to the semiconductor component. A method for controlling an electronic device, characterized in that the above current level is determined to be lower than I pp (peak pulse current) based on V rwm (reverse standoff voltage) and P pp (peak pulse power dissipation).
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Description

Electronic device for detecting defects in semiconductor parts and method for controlling the same Embodiments of the present disclosure relate to an electronic device for detecting defects in semiconductor components and a method for controlling the same. Semiconductor components are designed to withstand voltages or currents higher than those used in actual terminals, whereas actual terminals use voltages or currents lower than those levels. Consequently, there was a problem where the ability to detect defects was insufficient when using voltages or currents exceeding those of the terminal during semiconductor defect detection. In addition, as a terminal manufactured with semiconductor components is used, continuous stress is applied to the semiconductor components, and a high voltage stress (HVS) method is used to apply voltage to the semiconductor components before manufacturing the terminal in order to detect time-dependent defects generated by this in advance. FIG. 1a is a block diagram of an electronic device in a network environment according to various embodiments. FIG. 1b is a block diagram of an electronic device for detecting defects in semiconductor components according to various embodiments. FIG. 2 is a diagram illustrating the operation for detecting defects in semiconductor components of an electronic device according to various embodiments. FIG. 3 is a diagram illustrating the range of voltage, current, and power applied for defect detection of semiconductor components according to various embodiments. FIG. 4 is a diagram illustrating changes in current or RF Power according to various embodiments. FIG. 5 is a diagram illustrating the level of current applied to a semiconductor component, which is a diode, according to various embodiments. FIG. 6 is a drawing for illustrating semiconductor components in which the HVS method is used according to various embodiments. FIG. 7 is a drawing for explaining semiconductor components in which the HPS method is used according to various embodiments. FIG. 8 is a drawing for explaining semiconductor components in which the HPS method is used according to various embodiments. FIG. 9 is a drawing for illustrating semiconductor components in which the HPS method is used according to various embodiments. FIG. 10 is a diagram illustrating the defect detection process of a semiconductor component using the HCS method according to various embodiments. FIG. 11 is a diagram illustrating the defect detection process of a semiconductor component using the HPS method according to various embodiments. FIG. 1a is a block diagram of an electronic device (101) in a network environment (100) according to various embodiments. Referring to FIG. 1, in the network environment (100), the electronic device (101) may communicate with an electronic device (102) through a first network (198) (e.g., a short-range wireless communication network) or may communicate with at least one of an electronic device (104) or a server (108) through a second network (199) (e.g., a long-range wireless communication network). According to one embodiment, the electronic device (101) may communicate with the electronic device (104) through a server (108). According to one embodiment, the electronic device (101) may include a processor (120), memory (130), input module (150), sound output module (155), display module (160), audio module (170), sensor module (176), interface (177), connection terminal (178), haptic module (179), camera module (180), power management module (188), battery (189), communication module (190), subscriber identification module (196), or antenna module (197). In some embodiments, at least one of these components (e.g., connection terminal (178)) may be omitted from the electronic device (101), or one or more other components may be added. In some embodiments, some of these components (e.g., sensor module (176), camera module (180), or antenna module (197)) may be integrated into a single component (e.g., display module (160)). The processor (120) can control at least one other component (e.g., hardware or software component) of the electronic device (101) connected to the processor (120) by executing software (e.g., program (140)), for example, and can perform various data processing or operations. According to one embodiment, as at least part of the data processing or operations, the processor (120) can store commands or data received from other components (e.g., sensor module (176) or communication module (190)) in volatile memory (132), process the commands or data stored in volatile memory (132), and store the resulting data in non-volatile memory (134). According to one embodiment, the processor (120) may include a main processor (121) (e.g., central processing unit or application processor) or an auxiliary processor (123) that can operate independently or together with it (e.g., graphics processing unit, neural processing unit (NPU), image signal processor, sensor h