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KR-102963941-B1 - Substrate processing method

KR102963941B1KR 102963941 B1KR102963941 B1KR 102963941B1KR-102963941-B1

Abstract

The present invention relates to a substrate processing method, and more specifically, to a substrate processing method for improving substrate quality. A substrate processing method according to the present invention is a substrate processing method for processing a substrate in a chamber, comprising: a first processing step (S100) of processing the substrate in the chamber to a first temperature (T1); and a second processing step (S200) of processing the substrate in the chamber to a second temperature (T2) higher than the first temperature (T1) after the first processing step (S100), wherein the pressure in the chamber is pressurized to a first pressure (P1) greater than atmospheric pressure for at least a portion of time, and the pressure is reduced from the first pressure to the second pressure (P2).

Inventors

  • 오명근
  • 장원준
  • 이동재
  • 김주섭
  • 김진서
  • 남상록
  • 안원식

Assignees

  • 주식회사 원익아이피에스

Dates

Publication Date
20260512
Application Date
20221208

Claims (20)

  1. As a substrate processing method for processing a substrate in a chamber, A first processing step (S100) of processing a substrate in the chamber at a first temperature (T1); After the first processing step (S100), the method includes a second processing step (S200) for processing the substrate in the chamber at a second temperature (T2) higher than the first temperature (T1), and At least for a portion of time, the pressure inside the chamber is pressurized to a first pressure (P1) greater than atmospheric pressure, and the pressure is reduced from the first pressure to a second pressure (P2). A substrate processing method characterized by including a pressurizing step (S10) for pressurizing the pressure inside the chamber to a first pressure (P1) greater than atmospheric pressure for at least a portion of the time during the first processing step (S100), and a depressurizing step (S20) for depressurizing the pressure inside the chamber from the first pressure (P1) to the second pressure (P2) after the pressurizing step (S10).
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  3. In claim 1, A substrate processing method characterized by additionally including a third processing step (S300) after the second processing step (S200) of processing the substrate in the chamber to a third temperature (T3) higher than the second temperature (T2).
  4. In claim 3, A substrate processing method characterized by additionally including a temperature reduction step (S400) for reducing the temperature inside the chamber from the third temperature (T3) to the fourth temperature (T4) after the third processing step (S300).
  5. In claim 4, The above fourth temperature (T4) is, A substrate processing method characterized by being equal to or smaller than the first temperature (T1) above.
  6. In claim 1, A substrate processing method characterized by additionally including a pressure maintaining step (S30) for maintaining a constant pressure within the chamber between the above-mentioned pressurizing step (S10) and the above-mentioned depressurizing step (S20).
  7. In claim 1, The above pressurization step (S10) is, A substrate processing method characterized by starting to apply pressure at the same time as the start of the first processing step (S100).
  8. In claim 4, The above pressure reduction step (S20) is, A substrate processing method characterized by being performed for at least a portion of the above temperature reduction step (S400).
  9. In claim 8, The above pressure reduction step (S20) is, A substrate processing method characterized by starting the pressure reduction at the same time as the start of the temperature reduction step (S400).
  10. In claim 1, A substrate processing method characterized by including a pressure change step (S40) comprising: a sub-pressure reduction step (S41) for reducing the pressure inside the chamber to a pressure value within a pressure range of less than the first pressure (P1) and greater than or equal to the second pressure (P2) after the pressure increase step (S10); and a sub-pressure increase step (S42) for increasing the pressure inside the chamber to a pressure value within a pressure range of greater than the atmospheric pressure and less than or equal to the first pressure (P1) after the sub-pressure reduction step (S41).
  11. In claim 10, The above voltage transformation step (S40) is, A substrate processing method characterized by being performed repeatedly multiple times.
  12. In claim 11, A substrate processing method characterized by additionally including a sub-pressure maintaining step (S50) for maintaining a constant pressure within the chamber in at least one of the following: between a plurality of the above-mentioned pressure changing steps (S40), between the above-mentioned pressurizing step (S10) and the above-mentioned pressure changing step (S40), and between the above-mentioned pressure changing step (S40) and the above-mentioned pressure reducing step (S20).
  13. In claim 10, The above first processing step (S100) is, The method includes a first temperature maintenance step (S110) for treating a substrate in the chamber to the first temperature (T1), and a first temperature increase step (S120) for increasing the temperature in the chamber from the first temperature (T1) to the second temperature (T2). The above second processing step (S200) is, A substrate processing method characterized by including a second temperature maintenance step (S210) for processing a substrate in the chamber to the second temperature (T2), and a second temperature increase step (S220) for increasing the temperature in the chamber from the second temperature (T2) to the third temperature (T3).
  14. In claim 13, The above sub-pressure reduction step (S41) is, A substrate processing method characterized by reducing the pressure inside the chamber during the execution of at least one of the first heating step (S120) and the second heating step (S220).
  15. In claim 13, The above sub-pressurization step (S42) is, A substrate processing method characterized by being performed for at least a portion of the second temperature maintenance step (S210) above.
  16. In claim 1, A substrate processing method characterized by additionally including a process preparation step (S500) of reducing the pressure inside the chamber from atmospheric pressure to a third pressure (P3) and increasing the temperature inside the chamber from a fifth temperature (T5) to a first temperature (T1).
  17. In claim 16, The above third pressure (P3) is, A substrate processing method characterized by having the same pressure value as the second pressure (P2) above.
  18. In claim 1, The above second pressure (P2) is, A substrate processing method characterized by a pressure value less than atmospheric pressure.
  19. In claim 3, The above first processing step (S100), second processing step (S200) and third processing step (S300) are, A substrate processing method characterized by supplying H2O gas into the chamber for at least some time.
  20. In claim 3, The above first processing step (S100) and the above second processing step (S200) are, A first process gas is supplied into the chamber for at least some time, and The above third processing step (S300) is, A substrate processing method characterized by supplying a second process gas different from the first process gas into the chamber for at least some time.

Description

Substrate processing method The present invention relates to a substrate processing method, and more specifically, to a substrate processing method for improving substrate quality. Devices such as semiconductors, LCD substrates, and OLED substrates are manufactured by a semiconductor process that includes one or more deposition and etching processes. In particular, for semiconductor devices, a thin film can be formed on the surface of a substrate by a deposition process to form circuit patterns, and this can be performed by various semiconductor processes such as CVD, FCVD, PVD, and ALD. At this time, there is a problem in that trace imperfections remaining on the substrate surface, such as trace amounts of chlorine (Cl) remaining inside the chamber and elements like nitrogen that form weak bonds with silicon, remain on the substrate surface and become sources of contamination. In order to improve the imperfections of such substrates and thin films, nitrogen was removed by supplying H2O gas under atmospheric pressure in the past. However, as the substrate treatment is performed under atmospheric pressure, which is a relatively low and constant pressure, the degree of penetration of H2O gas into the substrate and thin film is shallow, resulting in a low degree of improvement in imperfections. In particular, when H2O gas is supplied under atmospheric pressure, there are no penetration factors into the substrate and thin film other than the diffusion effect due to concentration differences; consequently, impurity removal and oxide film densification through penetration into the substrate and thin film cannot be performed, leading to a problem of significant variation in the Wet Etch Rate (WER) characteristics of the substrate and thin film. Furthermore, conventional substrate processing methods have a problem in that, as they maintain a uniform atmospheric pressure, the discharge of reaction impurities generated during substrate processing is not smooth, leading to a decrease in performance such as an increase in WER due to residual impurities. Figure 1 is a graph showing a substrate processing method according to the present invention. FIG. 2 is a graph showing a substrate processing method of another embodiment according to the present invention. Figure 3 is a graph showing the effect of the substrate processing method according to the present invention. Hereinafter, a substrate processing method according to the present invention will be described with reference to the attached drawings. A substrate processing method according to the present invention, as illustrated in FIG. 1, is a substrate processing method for processing a substrate in a chamber, comprising: a first processing step (S100) of processing the substrate in the chamber to a first temperature (T1); and a second processing step (S200) of processing the substrate in the chamber to a second temperature (T2) higher than the first temperature (T1) after the first processing step (S100). In addition, the substrate processing method according to the present invention may include a pressurizing step (S10) in which the pressure inside the chamber is increased to a first pressure (P1) greater than atmospheric pressure for at least a portion of time during the first processing step (S100), and a depressurizing step (S20) in which the pressure inside the chamber is decreased from the first pressure (P1) to a second pressure (P2) after the pressurizing step (S10). In addition, the substrate processing method according to the present invention may further include a third processing step (S300) in which the substrate in the chamber is processed to a third temperature (T3) higher than the second temperature (T2) after the second processing step (S200). In addition, the substrate processing method according to the present invention may further include a temperature reduction step (S400) for reducing the temperature inside the chamber from a third temperature (T3) to a fourth temperature (T4) after the third processing step (S300). In addition, the substrate processing method according to the present invention may further include a process preparation step (S500) of reducing the pressure inside the chamber from atmospheric pressure to a third pressure (P3) and increasing the temperature inside the chamber from a fifth temperature (T5) to a first temperature (T1). The substrate described below can be used as a concept that includes both the state before the thin film is formed and the state after the thin film is deposited. The substrate subject to processing here can be understood to include all substrates used in display devices such as LEDs, LCDs, and OLEDs, semiconductor substrates, solar cell substrates, glass substrates, etc. In addition, the process of treating the substrate may include deposition, etching, annealing, etc., and in particular, may include a process for removing impurities and unnecessary gases from the substrate and the thin film deposite