Search

KR-102963947-B1 - EUV mask inspection device

KR102963947B1KR 102963947 B1KR102963947 B1KR 102963947B1KR-102963947-B1

Abstract

According to exemplary embodiments, an Extreme Ultra Violet (EUV) mask inspection device is provided. The EUV mask inspection device may include: a light source emitting an input beam which is near-infrared; a gas container disposed in the optical path of the input beam and containing a gaseous medium; a beam shaping device disposed between the gaseous container and the light source and generating a center-holed beam containing a hollow in the beam cross-section by reflecting a central portion of the input beam and passing an edge portion; and a beam output device that outputs an output beam generated by the gaseous medium and the center-holed beam.

Inventors

  • 박승범
  • 김억봉
  • 김태중

Assignees

  • 삼성전자주식회사

Dates

Publication Date
20260511
Application Date
20201012

Claims (10)

  1. A light source that emits a near-infrared input beam; A gas container disposed on the optical path of the input beam and containing a gaseous medium; A beam forming device disposed between the gas container and the light source, which generates a center-holed beam containing a hollow in the beam cross-section by reflecting the center portion of the input beam and passing the edge portion; and A beam output device that outputs an output beam generated by the above gaseous medium and the above hollow beam, and The beam cross-section of the output beam is surrounded by the beam cross-section of the hollow beam that has passed through the gaseous medium, and The wavelength of the output beam is shorter than the wavelength of the hollow beam, and The divergence angle of the output beam is characterized by being smaller than the divergence angle of the hollow beam. EUV (Extreme Ultra Violet) mask inspection device.
  2. In paragraph 1, EUV mask inspection device characterized in that the above hollow beam is a focused light.
  3. In paragraph 1, EUV mask inspection device characterized in that the focus of the above hollow beam is located on the gaseous medium within the above gas container.
  4. In paragraph 1, EUV mask inspection device characterized in that, at the focus of the above hollow beam, the hollow beam has a spatial-intensity distribution having a center-peaked intensity.
  5. In paragraph 1, EUV mask inspection device characterized by the hollow beam passing through the above gaseous medium and the output beam being spatially separated.
  6. In paragraph 1, EUV mask inspection device characterized in that the hollow beam passing through the above gaseous medium and the output beam do not overlap each other in the beam cross-section.
  7. delete
  8. In paragraph 1, The above beam output device includes an output hollow, and Passing the output beam through the output hollow, and EUV mask inspection device characterized by blocking the above hollow beam.
  9. In paragraph 1, EUV mask inspection device characterized by the beam output device reflecting the output beam.
  10. HHG (High Harmonics Generation) optical system for irradiating an output beam onto an EUV mask; and It includes a detector that detects the output beam reflected by the EUV mask, The above HHG optical system is, A light source that emits a near-infrared input beam; A gas container disposed on the optical path of the input beam and comprising an internal space that defines a gaseous medium; A beam forming device disposed between the gas container and the light source and forming a hollow in the beam cross-section of the input beam; and A beam output device that outputs an output beam generated by the input beam having the above gaseous medium and a hollow formed therein, The above-mentioned input beam with the formed hollow and the above-mentioned output beam do not overlap each other, The beam cross-section of the output beam is surrounded by the beam cross-section of the hollow beam that has passed through the gaseous medium, and The wavelength of the output beam is shorter than the wavelength of the hollow beam, and The divergence angle of the output beam is characterized by being smaller than the divergence angle of the hollow beam. EUV mask inspection device.

Description

EUV (Extreme Ultra Violet) mask inspection device The technical concept of the present disclosure relates to a semiconductor device manufacturing apparatus, and more specifically, to a semiconductor device manufacturing apparatus configured to irradiate an EUV (Extreme Ultra Violet) beam. Recently, with the increase in performance and integration of semiconductor devices, circuit patterns formed on EUV masks used to transfer circuits onto these devices are becoming increasingly finer. Consequently, there is a problem in that minute defects on the EUV mask can cause defects in semiconductor devices. Therefore, various methods are being researched to inspect EUV masks with high precision and efficiency. FIG. 1 is a schematic diagram illustrating an EUV (Extreme Ultra Violet) mask inspection device according to exemplary embodiments. FIG. 2 is a schematic diagram illustrating the High Harmonics Generation (HHG) optical system included in the EUV mask inspection device of FIG. 1. FIG. 3a is a plan view showing a cross-section of the input beam in a cross-section including the cutting line A-A' of FIG. 2. FIG. 3b is a plan view showing a cross-section of a center-holed beam in a cross-section including the cutting line B-B' of FIG. 2. FIG. 3c is a plan view showing a cross-section of a hollow beam in a cross-section including the cutting line C-C' of FIG. 2. FIG. 3d is a plan view showing the cross-section of the hollow beam and the output beam in the cross-section including the cutting line D-D' of FIG. 2. FIG. 4a is a perspective view showing a beam forming device, and FIG. 4b is a perspective view showing a beam output device. FIG. 5a is a drawing for illustrating an HHG optical system according to other exemplary embodiments. FIG. 5b is a perspective view illustrating a beam forming device included in the HHG optical system. FIG. 6 is a drawing for illustrating an HHG optical system according to other exemplary embodiments. FIG. 7 is a drawing for illustrating an HHG optical system according to other exemplary embodiments. Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. Identical components in the drawings are denoted by the same reference numerals, and redundant descriptions thereof are omitted. FIG. 1 is a schematic drawing for illustrating an EUV mask inspection device (10) according to exemplary embodiments. Referring to FIG. 1, the EUV mask inspection device (10) can inspect an EUV mask (EM). The EUV mask inspection device (10) may include a High Harmonics Generation (HHG) optical system (100) and a detector (200). The HHG optical system (100) can irradiate an output beam (OB) of the extreme ultraviolet wavelength band onto an EUV mask (EM). The EUV mask (EM) may be a reflective type mask, but is not limited thereto. For example, the EUV mask (EM) may be a transmissive type mask. Although not shown in FIG. 1, the EUV mask inspection device (10) may further include a mask stage for fixing and aligning the EUV mask (EM). The mask stage may move the EUV mask (EM) in a vertical or horizontal direction, or rotate the EUV mask (EM) around an axis perpendicular to the upper surface (EM) of the EUV mask. Here, the EUV mask (EM) may be a device for transferring a circuit pattern set on a wafer. A semiconductor device can be manufactured as patterns formed on different EUV masks (EM) are transferred onto the wafer in an overlapping manner. The process of transferring a pattern formed on an EUV mask (EM) to a wafer is called a lithography process. The lithography process may include a spin coating process for providing a photoresist material on a wafer, an exposure process for irradiating an EUV beam onto the photoresist layer using an EUV mask (EM), and a development process for removing the exposed or unexposed portions of the photoresist. Defects in the EUV mask (EM) can cause serious defects in the circuit patterns transferred onto the wafer. Accordingly, the patterns transferred by the EUV mask (EM) must be measured and inspected before performing the lithography process on the wafer for the manufacture of semiconductor devices. The detector (200) can detect an output beam (OB) reflected by an EUV mask (EM). The EUV mask inspection device (10) can inspect the pattern transferred to the wafer by the EUV mask (EM) from the image generated by the detector (200) without a separate lithography process. According to some embodiments, the detector (200) may be either a Charge Coupled Device (CCD) camera or a Complementary Metal Oxide Semiconductor (CMOS) image sensor, but is not limited thereto. FIG. 2 is a schematic diagram for explaining the HHG optical system (100) included in the EUV mask inspection device (10) of FIG. 1. FIG. 3a is a plan view showing a cross-section of the input beam (IB) in the cross-section including the cutting line A-A' of FIG. 2. FIG. 3b is a plan view showing a cross-section of a center-holed beam (CHB) in a cross