KR-102964076-B1 - Substrate processing apparatus

KR102964076B1KR 102964076 B1KR102964076 B1KR 102964076B1KR-102964076-B1

Abstract

The present invention relates to a substrate processing apparatus, and more specifically, to a substrate processing apparatus capable of effectively exhausting residual gas remaining inside a chamber to prevent the generation of particles that may be caused by residual gas.

Inventors

장경호
강민욱
윤병호

Assignees

주식회사 테스

Dates

Publication Date: 20260512
Application Date: 20241226

Claims (9)

A chamber providing a processing space where a processing process is performed on a substrate; An upper shower head plate provided at the upper part of the interior of the above chamber to supply purge gas; A stem connected to the upper surface of the upper shower head plate, into which the purge gas is supplied inward, and having a first supply hole formed therein; and A back plate having a second supply hole formed therein, which forms a purge gas space between the upper surface of the upper shower head plate and the back plate; A substrate processing device characterized in that the back plate is provided spaced apart from the stem on the upper surface of the upper shower head plate.
delete
In paragraph 1, On the upper surface of the above upper shower head plate A substrate processing apparatus characterized by the gap between the stem and the backplate being 0.5 mm to 5 mm.
In paragraph 1, A substrate processing device characterized by the fact that the purge gas supplied from the first supply hole flows into the purge gas space through the second supply hole.
In paragraph 1, The above first supply hole and the above second supply hole are A substrate processing device characterized by being formed at the same height on the upper surface of the upper shower head plate.
In paragraph 1, The above backplate is A body portion spaced apart from the upper surface of the upper shower head plate and having an opening formed through which the stem passes, and A substrate processing device characterized by having a first extension portion that extends downward from the inner edge of the body portion and is connected to the upper surface of the upper shower head plate.
In paragraph 6, The above backplate is A substrate processing device characterized by further comprising a second extension portion that extends downward from the outer edge of the body portion and is connected to the upper surface of the upper shower head plate.
In paragraph 6 or 7, A substrate processing device characterized in that the second supply hole is provided in the first extension part.
In paragraph 1, A substrate processing device characterized in that the upper shower head plate and the back plate are made of aluminum or ceramic material.

Description

Substrate processing apparatus The present invention relates to a substrate processing apparatus, and more specifically, to a substrate processing apparatus capable of effectively exhausting residual gas remaining inside a chamber to prevent the generation of particles that may be caused by residual gas. A substrate processing device according to the prior art deposits a thin film of a predetermined thickness on one side of a substrate, for example, on the upper surface of the substrate. In this case, when the thin film is deposited in an overlapping manner on the upper surface of the substrate, the substrate can be bowed by the stress of the thin film. When the substrate bows in this manner, it becomes difficult to position the substrate correctly during subsequent various substrate processing steps. In particular, as the precision of substrate processing steps increases day by day, this bowing phenomenon reduces the precision of the processing steps. Therefore, to prevent the aforementioned bowing phenomenon of the substrate, a thin film of a predetermined thickness is deposited on the lower surface of the substrate to prevent the bowing phenomenon. Such a substrate processing device is equipped with an upper shower head that supplies purge gas, etc. to the upper part of the substrate, and furthermore, is equipped with a lower shower head that supplies process gas to the lower part of the substrate. However, even if purge gas is supplied through the upper shower head, process gas supplied from the lower shower head can diffuse into the interior of the chamber and remain in the processing space above the upper shower head, potentially generating various byproducts. In particular, residual gases may remain unvented inside the door opening through which substrates are inserted into and removed from the chamber, generating various byproducts and potentially causing particles. In addition, in the case of a substrate processing device according to the prior art, replacing or repairing the upper shower head required a significant amount of time and personnel due to the heavy load of the upper shower head. FIG. 1 is a side cross-sectional view of a substrate processing apparatus according to one embodiment of the present invention, FIG. 2 is an enlarged view of the upper shower head in FIG. 1. FIG. 3 is an upper perspective view of the backplate, FIG. 4 is a side cross-sectional view of a substrate processing apparatus according to another embodiment of the present invention. Hereinafter, the structure of a substrate processing device (1000) according to an embodiment of the present invention will be examined in detail with reference to the drawings. FIG. 1 is a side cross-sectional view of a substrate processing device (1000) according to one embodiment of the present invention. Referring to FIG. 1, the substrate processing device (1000) may include a chamber (100) that provides a processing space (110) in which a processing process is performed on a substrate (S), an upper shower head plate (210) that is provided on the upper part of the chamber (100) to supply purge gas, a stem (340) that is connected to the upper surface of the upper shower head plate (210) to supply the purge gas inwardly and has a first supply hole (341) formed therein, and a back plate (300) that forms a purge gas space (312) between itself and the upper surface of the upper shower head plate (210) and has a second supply hole (321) formed therein. First, the chamber (100) can provide a processing space (110) inside which various components required for a deposition process on the substrate (S) are accommodated. One side of the chamber (100) may be provided with a door opening (120) through which the substrate (S) is loaded into or unloaded from the processing space (110), and the door (130) may be provided in the aforementioned door opening (120). Meanwhile, the lower part of the processing space (110) of the chamber (100) may be provided with a substrate support member (400) that supports the substrate (S) and exposes the lower surface of the substrate (S) to the process gas. The substrate support member (400) supports the edge of the lower surface of the substrate (S) at the bottom of the processing space (110). A lower shower head (430) is provided inside the substrate support member (400), and process gas can be supplied toward the lower surface of the substrate (S) by the lower shower head (430). The substrate support member (400) can be connected to a connecting bar (470) that extends downward. Meanwhile, the substrate support member (400) may be provided with a substrate holder (410) that supports the edge of the lower surface of the substrate (S), and may be provided with the aforementioned lower shower head (430) inside the substrate holder (410). The lower shower head (430) may be equipped with a lower shower head plate (431) and a lower plate (450) having a heat exchange channel (not shown) formed therein. In this case, the sub