KR-102964171-B1 - SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

KR102964171B1KR 102964171 B1KR102964171 B1KR 102964171B1KR-102964171-B1

Abstract

The present invention aims to provide a technology capable of processing a substrate with stable process performance. A substrate processing apparatus according to one embodiment of the present disclosure comprises a holding unit for holding a substrate, a liquid discharge unit, a first supply unit, a second supply unit, and a control unit for controlling each unit. The liquid discharge unit discharges a processing liquid to a substrate held by the holding unit. The first supply unit supplies the processing liquid to the liquid discharge unit. The second supply unit supplies steam to the liquid discharge unit. The second supply unit has a steam generator that generates steam, a supply line, a stabilizing mechanism, a pressure gauge for measuring the pressure of steam flowing through the supply line, and a pressure regulating mechanism. The supply line supplies steam from the steam generator to the liquid discharge unit. The stabilizing mechanism stabilizes the amount of steam supplied from the steam generator to the supply line. The pressure regulating mechanism adjusts the pressure of the steam flowing through the supply line. The control unit controls the pressure regulating mechanism so that the pressure of the steam measured by the pressure gauge becomes a preset pressure.

Inventors

사쿠라이 히로키

Assignees

도쿄엘렉트론가부시키가이샤

Dates

Publication Date: 20260512
Application Date: 20220407
Priority Date: 20210420

Claims (11)

In a substrate processing device, A retaining part that holds the substrate, and A liquid discharge unit that discharges a processing liquid onto the substrate maintained in the above-mentioned maintenance unit, and A first supply unit that supplies a processing liquid to the above-mentioned liquid discharge unit, and A second supply unit that supplies steam to the above liquid discharge unit Equipped with, The above second supply unit is, A steam generator that generates steam, and A supply line that supplies steam from the above steam generator to the above liquid discharge section, and A pressure gauge for measuring the pressure of steam flowing through the above supply line, and A pressure regulating mechanism for adjusting the pressure of steam flowing through the above supply line, and A stabilizing mechanism communicating with the supply line between the above steam generator, 1) the pressure gauge, and 2) the pressure regulating mechanism, wherein the stabilizing mechanism performs feedback control of the pressure of the steam within the supply line, and A control unit that communicates at least with the pressure gauge and the pressure regulating mechanism, and 1) determines the discharge temperature of the mixed fluid of the processing liquid and the water vapor from the liquid discharge section by applying a correlation between the pressure of the water vapor and the relevant discharge temperature of the mixed fluid of the processing liquid and the water vapor for removing a resist film on the surface of the substrate when the substrate is maintained in the holding section, 2) obtains the pressure of the water vapor from the pressure gauge, and 3) adjusts the pressure of the water vapor flowing through the supply line to a preset pressure, and sends a signal to the pressure regulating mechanism so that the preset pressure of the water vapor corresponds to a selected discharge temperature of the mixed fluid of the processing liquid and the water vapor according to the correlation. A substrate processing device including
In paragraph 1, A substrate processing device wherein the control unit obtains the correlation from a memory unit communicating with the control unit.
In paragraph 2, A substrate processing device in which the above-mentioned control unit calculates the above-mentioned preset pressure based on an operation formula obtained from the above-mentioned correlation.
In paragraph 3, The above stabilization mechanism is, A first branch line branching from the above supply line, and Back pressure valve provided in the above-mentioned first branch line A substrate processing device having
In paragraph 4, The above second supply unit is, A first shut-off valve provided downstream of the pressure gauge in the above supply line, and A second branch line branched between the pressure gauge and the first opening/closing valve in the above supply line, and A second opening/closing valve provided in the above second branch line Having more, A substrate processing device in which the above control unit sends a signal to close the first shut-off valve and open the second shut-off valve when steam is not supplied to the liquid discharge unit.
In paragraph 5, A substrate processing apparatus in which the above-mentioned processing solution is a mixture of sulfuric acid and hydrogen peroxide.
In paragraph 1, The above stabilization mechanism is, A first branch line branching from the above supply line, and back pressure valve formed in the first branch line above A substrate processing device having
In paragraph 1, The above second supply unit is, A first shut-off valve formed downstream of the pressure gauge in the above supply line, and A second branch line branching from between the pressure gauge and the first opening/closing valve in the above supply line, and A second opening/closing valve formed in the second branch line above With more, A substrate processing device in which the above control unit sends a signal to close the first shut-off valve and open the second shut-off valve when steam is not supplied to the liquid discharge unit.
In paragraph 1, A substrate processing apparatus wherein the above-mentioned processing solution comprises a mixture of sulfuric acid and hydrogen peroxide.
In a substrate processing method, A process for providing a substrate processing device, wherein the substrate processing device comprises a holding part for holding a substrate, a liquid discharge part for discharging a processing liquid onto the substrate held in the holding part, a first supply part for supplying a processing liquid to the liquid discharge part, and a second supply part for supplying steam to the liquid discharge part. The above second supply unit is, A steam generator that generates steam, and A supply line that supplies steam from the above steam generator to the above liquid discharge section, and A pressure gauge for measuring the pressure of steam flowing through the above supply line, and A pressure regulating mechanism for adjusting the pressure of steam flowing through the above supply line, and A stabilization mechanism that communicates with the supply line between the above steam generator, 1) the pressure gauge, and 2) the pressure regulating mechanism, and performs feedback control of the pressure of the steam within the supply line. A process for providing a substrate processing device having, and A process wherein the pressure gauge and the pressure regulating mechanism 1) determine the discharge temperature of the mixed fluid of the processing liquid and the water vapor from the liquid discharge section by applying a correlation between the pressure of the water vapor and the relevant discharge temperature of the mixed fluid of the processing liquid and the water vapor for removing a resist film on the surface of the substrate when the substrate is maintained in the holding section, 2) obtain the pressure of the water vapor from the pressure gauge, and 3) control the pressure regulating mechanism to send a signal to adjust the pressure of the water vapor flowing through the supply line to a pressure corresponding to the selected discharge temperature of the mixed fluid of the processing liquid and the water vapor based on the correlation. A substrate processing method comprising
In a substrate processing device, A retaining part that holds the substrate, and A liquid discharge unit that discharges a processing liquid onto the substrate maintained in the above-mentioned maintenance unit, and A first supply unit that supplies a processing liquid to the above-mentioned liquid discharge unit, and A second supply unit that supplies steam to the above liquid discharge unit Equipped with, The above second supply unit is, A steam generator that generates steam, and A supply line that supplies steam from the above steam generator to the above liquid discharge section, and A pressure gauge for measuring the pressure of steam flowing through the above supply line, and A pressure regulating mechanism for adjusting the pressure of steam flowing through the above supply line, and A stabilizing mechanism communicating with the supply line in the middle of the above steam generator, 1) the pressure gauge, and 2) the pressure regulating mechanism, wherein the stabilizing mechanism performs feedback control of the pressure of the steam within the supply line, and A control unit that communicates at least with the pressure regulating mechanism, and 1) determines the discharge temperature of the mixed fluid of the processing liquid and the water vapor from the liquid discharge unit by applying a correlation between the pressure of the water vapor and the relevant discharge temperature of the mixed fluid of the processing liquid and the water vapor for removing a resist film on the surface of the substrate when the substrate is maintained in the holding unit, 2) obtains the pressure of the water vapor from the pressure gauge, and 3) adjusts the pressure of the water vapor flowing through the supply line to a preset pressure, and sends a signal to the pressure regulating mechanism so that the preset pressure of the water vapor corresponds to a selected discharge temperature of the mixed fluid of the processing liquid and the water vapor according to the correlation. A substrate processing device including

Description

Substrate Processing Apparatus and Substrate Processing Method The disclosed embodiment relates to a substrate processing apparatus and a substrate processing method. Conventionally, a technique for removing a resist film formed on a substrate, such as a semiconductor wafer (hereinafter also referred to as a wafer), by SPM (Sulfuric Acid Hydrogen Peroxide Mixture) treatment is known. This SPM treatment is performed by supplying an SPM solution, produced by mixing sulfuric acid and hydrogen peroxide, to the resist film on the substrate (see Patent Document 1). Figure 1 is a schematic diagram showing the general configuration of a substrate processing system according to an embodiment. FIG. 2 is a schematic diagram showing an example of the configuration of a processing unit according to an embodiment. FIG. 3 is a schematic diagram showing an example of the configuration of a steam supply unit according to an embodiment. FIG. 4 is a cross-sectional view showing an example of the configuration of a nozzle according to an embodiment. FIG. 5 is a schematic diagram showing one process of substrate processing according to an embodiment. FIG. 6 is a schematic diagram showing one process of substrate processing according to an embodiment. FIG. 7 is a flowchart showing the procedure of substrate processing performed by a substrate processing system according to an embodiment. Hereinafter, embodiments of the substrate processing apparatus and substrate processing method disclosed herein will be described in detail with reference to the attached drawings. Furthermore, the present disclosure is not limited by each embodiment described below. Additionally, it should be noted that the drawings are schematic and that the dimensional relationships of each element and the ratios of each element may differ from reality. Furthermore, there may be parts in which the dimensional relationships or ratios differ from one another among the drawings. Conventionally, a technique for removing a resist film formed on a substrate, such as a semiconductor wafer (hereinafter also referred to as a wafer), by SPM (Sulfuric Acid Hydrogen Peroxide Mixture) treatment is known. This SPM treatment is performed by supplying an SPM solution, produced by mixing sulfuric acid and hydrogen peroxide, to the resist film on the substrate. In addition, in the prior art, a technology for efficiently performing SPM treatment is disclosed by discharging high-temperature steam together with an SPM liquid onto a substrate and performing SPM treatment under a high-temperature environment. However, in the aforementioned conventional technology, the temperature of the treatment liquid changes according to the steam discharge flow rate, and since it is difficult to directly measure the steam discharge flow rate, it was difficult to stabilize the temperature of the treatment liquid. Consequently, it was difficult to obtain stable process performance in the conventional technology. Therefore, a technology capable of overcoming the aforementioned problems and processing substrates with stable process performance is anticipated. <Overview of Substrate Processing System> First, with reference to FIG. 1, the schematic configuration of a substrate processing system (1) according to an embodiment will be described. FIG. 1 is a diagram showing the schematic configuration of a substrate processing system (1) according to an embodiment. In addition, the substrate processing system (1) is an example of a substrate processing device. Hereinafter, in order to clarify the positional relationship, the X-axis, Y-axis, and Z-axis that are orthogonal to each other are defined, and the Z-axis forward direction is defined as the vertical upward direction. As illustrated in FIG. 1, the substrate processing system (1) comprises an input/output station (2) and a processing station (3). The input/output station (2) and the processing station (3) are provided adjacent to each other. The receiving/export station (2) is equipped with a carrier placement section (11) and a return section (12). In the carrier placement section (11), a plurality of carriers (C) are arranged to receive a plurality of substrates, in the embodiment, a semiconductor wafer (W) [hereinafter referred to as wafer (W)] in a horizontal state. The transport unit (12) is provided adjacent to the carrier placement unit (11) and is equipped with a substrate transport device (13) and a delivery unit (14) inside. The substrate transport device (13) is equipped with a wafer holding mechanism for holding a wafer (W). Additionally, the substrate transport device (13) is capable of movement in the horizontal and vertical directions and rotation around a vertical axis, and transports the wafer (W) between the carrier (C) and the delivery unit (14) using the wafer holding mechanism. A processing station (3) is provided adjacent to a return section (12). The processing station (3) is equipped with a return section (15) and a pluralit