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KR-102964178-B1 - SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, PLASMA GENERATING APPARATUS AND PROGRAM

KR102964178B1KR 102964178 B1KR102964178 B1KR 102964178B1KR-102964178-B1

Abstract

A configuration is provided comprising: a processing chamber for processing a substrate; a gas supply system for supplying a processing gas into the processing chamber; a plasma generating unit for generating a plasma of the processing gas within the processing chamber, the plasma generating unit comprising a coil, an insulating member, and a shield portion arranged to cover the upper side of the coil, and the plasma generating unit comprising the shield portion installed to protrude into the interior of the processing chamber; and an adjustment mechanism fixed to the shield portion and capable of adjusting the gap distance between the coil and the insulating member.

Inventors

  • 타케다 츠요시
  • 하라 다이스케

Assignees

  • 가부시키가이샤 코쿠사이 엘렉트릭

Dates

Publication Date
20260513
Application Date
20200911

Claims (20)

  1. Processing room for processing substrates; A gas supply system that supplies processing gas to the above-mentioned processing chamber; A plasma generating unit configured to be installed to protrude into the interior of the processing chamber and comprising a coil, an insulating member, and a shield portion arranged to cover the upper side of the coil, and generating a plasma of the processing gas within the processing chamber; and An adjustment mechanism fixed to the shield portion and capable of adjusting the gap distance between the coil and the insulating member. A substrate processing device equipped with
  2. In paragraph 1, The above coil is a substrate processing device having a spiral shape of 0.5 turns or more.
  3. In paragraph 1, The above insulating member is a substrate processing device having a hemispherical or semi-elongated shape installed to protrude into the interior of the processing chamber.
  4. In paragraph 1, A substrate processing device having a curved surface and curvature in the shape of the coil above, following the curved surface of the insulating member.
  5. In paragraph 1, The above plasma generating unit is a substrate processing device shielded by a cylindrical or rectangular body composed of a conductive metal plate.
  6. In paragraph 1, The above adjustment mechanism is a substrate processing device having a moving mechanism that moves the coil up and down.
  7. In paragraph 6, The above moving mechanism is a micrometer, and the substrate processing device moves the coil up and down by the rotation of the micrometer.
  8. In paragraph 6, The above coil is fixed to a fixed member, and The above moving mechanism is a substrate processing device that moves the above fixed member and the above coil up and down as a single unit.
  9. In paragraph 1, The above plasma generating unit is a substrate processing device installed at the top of the processing chamber.
  10. In paragraph 1, A substrate processing device in which a plurality of the above-mentioned plasma generating units are installed.
  11. In paragraph 1, It includes a substrate holding part capable of loading multiple substrates, and A substrate processing device having a plurality of plasma generating units on the side of the processing chamber.
  12. In paragraph 1, A substrate processing device in which the above coil is connected to a matching device and a high-frequency power source at one end and connected to a ground portion at the other end.
  13. In paragraph 1, The above shield portion is a substrate processing device connected to a ground portion.
  14. In paragraph 1, A substrate processing device that changes the plasma generation efficiency by adjusting the gap distance between the coil and the insulating member by the above adjustment mechanism.
  15. A process of introducing a substrate into a processing chamber of a substrate processing apparatus comprising: a processing chamber for processing a substrate; a gas supply system for supplying a processing gas into the processing chamber; a plasma generating unit for generating a plasma of the processing gas within the processing chamber, the plasma generating unit comprising a coil, an insulating member, and a shield portion arranged to cover the upper side of the coil, the plasma generating unit comprising a A process of generating plasma of the treatment gas within the treatment chamber by the plasma generation unit described above. A method for manufacturing a semiconductor device comprising
  16. A plasma generating unit configured to be installed to protrude into the interior of a processing chamber for processing a substrate, comprising a coil, an insulating member, and a shield portion arranged to cover the upper side of the coil, and generating a plasma of a processing gas within the processing chamber; and An adjustment mechanism fixed to the shield portion and capable of adjusting the gap distance between the coil and the insulating member. A plasma generating device equipped with
  17. A step of introducing a substrate into a processing chamber of a substrate processing device comprising: a processing chamber for processing a substrate; a gas supply system for supplying a processing gas into the processing chamber; a plasma generating unit for generating a plasma of the processing gas within the processing chamber, comprising a coil, an insulating member, and a shield portion arranged to cover the upper side of the coil, the plasma generating unit for generating a plasma of the processing gas within the processing chamber; and an adjustment mechanism fixed to the shield portion and capable of adjusting the gap distance between the coil and the insulating member. A step of generating plasma of the processing gas within the processing chamber by the plasma generating unit. A program recorded on a computer-readable recording medium that executes on a substrate processing device by a computer.
  18. In paragraph 1, A substrate mounting stand for mounting the above substrate is provided, A substrate processing device configured such that the diameter of the insulating member is smaller than the diameter of the mounting base.
  19. In paragraph 8, The coil fixed to the fixed member and the adjustment mechanism fixed to the shield portion are a substrate processing device disposed inside the shield portion.
  20. In Paragraph 19, The above-mentioned fixing member is composed of an insulating material and is a substrate processing device that fixes both ends of the coil.

Description

Substrate processing apparatus, method of manufacturing semiconductor device, plasma generating apparatus and program The present disclosure relates to a substrate processing apparatus, a method for manufacturing a semiconductor device, a plasma generating apparatus, and a program. Semiconductor devices, such as Large Scale Integrated Circuits, Dynamic Random Access Memory (DRAM), and Flash Memory, are undergoing miniaturization of circuit patterns due to high integration. In the manufacturing process of semiconductor devices, plasma processing is performed as a process to realize miniaturization (see, for example, Patent Document 1). FIG. 1 is a schematic diagram of a substrate processing apparatus according to a first embodiment of the present disclosure. FIG. 2 is a schematic diagram of the combination of an insulating member and a coil of a substrate processing device according to the first embodiment of the present disclosure. FIG. 3 is a graph illustrating the input efficiency characteristics of high-frequency power in a substrate processing apparatus according to the first embodiment of the present disclosure. FIG. 4 is a schematic diagram of a controller of a substrate processing device according to a first embodiment of the present disclosure. FIG. 5 is a flowchart illustrating a substrate processing process according to a first embodiment of the present disclosure. FIG. 6 is an example of a sequence of a substrate processing process according to a first embodiment of the present disclosure. FIG. 7 is a schematic diagram of a substrate processing apparatus according to a second embodiment of the present disclosure. FIG. 8 is a schematic diagram of a substrate processing apparatus according to a third embodiment of the present disclosure. Hereinafter, embodiments of the present disclosure will be described. <First Embodiment> Hereinafter, a first embodiment of the present disclosure will be described based on the drawings. (1) Configuration of the substrate processing device First, the configuration of the substrate processing device (100) according to the first embodiment of the present disclosure will be described. The substrate processing device (100) is, for example, an insulating film forming unit and is configured as a single-wafer type substrate processing device as shown in FIG. 1. (Disposal container) As illustrated in FIG. 1, the substrate processing device (100) is equipped with a processing container (202). The processing container (202) is configured as a flat, sealed container, for example, having a circular horizontal cross-section. Additionally, the processing container (202) is configured as a metal material, such as aluminum (Al) or stainless steel (SUS), or an insulating material, such as quartz or alumina. Inside the processing container (202), a processing chamber (201) for processing a wafer (200), such as a silicon wafer, as a substrate, and a material chamber (203) located below it are formed. The processing container (202) is mainly composed of a cover (231), an upper container (202a), a lower container (202b), and a partition plate (204) installed between the upper container (202a) and the lower container (202b). Additionally, the space enclosed by the cover (231), the upper container (202a), the partition plate (204), the second gas dispersion unit (235b) described later, and the plasma unit (270a) described later is called the processing room (201), and the space enclosed by the lower container (202b) is called the material room (203). A grounded cylindrical shielding plate (280) is disposed on the outside of the processing container (202) to shield against radiant heat from the heater (213) described later or electromagnetic waves radiated from the coil (253a) described later. A substrate inlet/outlet (1480) adjacent to a gate valve (1490) is installed on the side of the lower container (202b), and the wafer (200) moves between unillustrated transport chambers via the substrate inlet/outlet (1480). Multiple lift pins (207) are installed on the bottom of the lower container (202b). Additionally, the lower container (202b) is grounded. A substrate support member (210) for supporting a wafer (200) is installed in the processing chamber (201). The substrate support member (210) mainly comprises a substrate placement surface (211) for placing the wafer (200), a substrate placement base (212) having the substrate placement surface (211) on its surface, a heater (213) as a heating element contained in the substrate placement base (212), and a susceptor electrode (256) likewise contained in the substrate placement base (212). In the substrate placement base (212), a through hole (214) through which a lift pin (207) passes is installed at a position corresponding to the lift pin (207). A bias adjuster (257) is connected to the susceptor electrode (256) and configured to allow adjustment of the potential of the susceptor electrode (256). The bias adjuster (257) is configured to ad