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KR-102964238-B1 - APPARATUS AND METHOD FOR TREATING SUBSTRATE

KR102964238B1KR 102964238 B1KR102964238 B1KR 102964238B1KR-102964238-B1

Abstract

The present invention provides a substrate processing apparatus and a substrate processing method. The substrate processing method of the present invention comprises: an etching solution supply step of supplying an etching solution to a substrate; a puddle step of rotating the substrate at a first rotational speed to form a liquid film of the etching solution supplied to the substrate in a puddle shape; and a thickness control step of changing the rotational speed of the substrate to a rotational speed different from the first rotational speed to control the thickness of the liquid film of the etching solution. According to the substrate processing method, the dispersion of the etch rate can be effectively controlled.

Inventors

  • 이지영
  • 김원근
  • 정영대
  • 정지훈
  • 김태신
  • 손원식

Assignees

  • 세메스 주식회사

Dates

Publication Date
20260513
Application Date
20220729

Claims (20)

  1. An etching solution supply step for supplying an etching solution to a substrate; A puddle step of rotating the substrate at a first rotational speed to form a liquid film of the etching solution supplied to the substrate into a puddle shape; A thickness control step of changing the rotational speed of the substrate to a rotational speed different from the first rotational speed to control the thickness of the liquid film of the etching solution; and A heating step of heating the above substrate within a certain temperature range; comprising, The above heating step is, The method includes a step of heating the substrate to a temperature higher than the temperature of the etching solution while the supply of the etching solution is interrupted, which is performed in the puddle step and the thickness control step. In the thickness adjustment step above, A substrate processing method that measures thickness data and temperature data for each position of the substrate, and controls the rotation speed and temperature of the substrate based on the thickness data and temperature data to control the thickness of the liquid film for each position of the substrate in real time.
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  5. In paragraph 1, A substrate processing method comprising: a heating step comprising a first heating step of preheating the substrate within a first temperature range prior to the etching solution supply step; and a second heating step of secondarily heating the substrate within a second temperature range higher than the first temperature range while the supply of the etching solution is interrupted during the puddle step and the thickness control step.
  6. In paragraph 1, A substrate processing method that intermittently controls the temperature of the substrate by performing the heating step in the thickness control step.
  7. In paragraph 1, A substrate processing method in which, in the heating step above, the temperature of the central portion of the substrate and the periphery portion surrounding the central portion of the substrate are each controlled.
  8. In any one of paragraphs 1 and 5 through 7, A substrate processing method comprising, after the thickness adjustment step, a rinse solution supply step of supplying a rinse solution to the substrate while rotating the substrate at a second rotational speed greater than the first rotational speed to remove a liquid film of an etching solution on the substrate.
  9. In any one of paragraphs 1 and 5 through 7, A substrate processing method comprising a puddle step, wherein the puddle step comprises a puddle forming step in which the substrate is rotated at the first rotational speed to form a liquid film of the etching solution supplied to the substrate into a puddle shape, and a stabilization step in which the liquid film of the etching solution is stabilized.
  10. In Paragraph 9, A substrate processing method in which, during the thickness adjustment step, the substrate is stopped from rotating or rotated at a speed lower than the first rotation speed.
  11. An etching solution supply step for supplying an etching solution to a substrate; A puddle step of rotating the substrate at a first rotational speed to form a liquid film of the etching solution supplied to the substrate into a puddle shape; A heating step comprising heating the substrate while the supply of the etching solution is interrupted; A thickness control step of controlling the temperature of the substrate while changing the rotational speed of the substrate to a rotational speed different from the first rotational speed to control the thickness of the liquid film of the etching solution; and A rinse solution supply step for removing a liquid film of the etching solution on the substrate by rotating the substrate at a second rotational speed greater than the first rotational speed after the thickness adjustment step; The heating step is performed in the puddle step and the thickness control step, and In the thickness adjustment step above, A substrate processing method that measures thickness data and temperature data for each position of the substrate, and controls the rotation speed and temperature of the substrate based on the thickness data and temperature data to control the thickness of the liquid film for each position of the substrate in real time.
  12. In Paragraph 11, A substrate processing method that intermittently controls the temperature of the substrate by performing the heating step in the thickness control step.
  13. In Paragraph 11, A substrate processing method in which, in the heating step above, the temperature of the central portion of the substrate and the periphery portion surrounding the central portion of the substrate are each controlled.
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  15. A support member that supports and rotates a substrate within a process chamber; An etching solution supply unit that supplies an etching solution to the above substrate; A rotational driving unit that rotates the support member to rotate the substrate at a first rotational speed to form a liquid film of the etching solution on the substrate in a puddle shape; A heating unit for heating the above substrate; A control unit connected to the above etching solution supply unit, the above rotary drive unit, and the above heating unit, and controlling the rotational speed and temperature of the substrate to control the thickness of the liquid film of the etching solution; and It includes a thickness measuring unit for measuring the thickness of the liquid film of the etching solution and a temperature measuring unit for measuring the temperature of the substrate; The above control unit is, A substrate processing device connected to the thickness measuring unit and the temperature measuring unit, controlling the rotation driving unit and the heating unit based on thickness data and temperature data for each position of the substrate measured by the thickness measuring unit and the temperature measuring unit to adjust the rotation speed and temperature of the substrate, thereby adjusting the thickness of the liquid film for each position of the substrate in real time.
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  17. In paragraph 15, The above etching solution supply unit includes a liquid heating unit that heats the etching solution, and A substrate processing device wherein the control unit controls the heating unit to heat the substrate to a temperature above that of the etching solution after the etching solution heated by the liquid heating unit is supplied to the substrate.
  18. In paragraph 15, A substrate processing device comprising a lower heating unit disposed on the support member and heating the lower part of the substrate.
  19. In paragraph 15, A substrate processing device in which the control unit controls the heating unit to intermittently heat the substrate.
  20. In any one of paragraphs 15 and 17 through 19, A substrate processing apparatus comprising an upper heating unit that is movably positioned on the upper surface of the substrate and locally heats the upper surface of the substrate.

Description

Apparatus and Method for Treating Substrate The present invention relates to a substrate processing apparatus and a substrate processing method. Generally, in an etching process for patterning or removing a thin film formed on a substrate during a semiconductor manufacturing process, when etching is performed on a substrate in a single-wafer manner, the thin film is removed through a reaction between the thin film on the substrate and the etching solution by supplying the etching solution onto the substrate while rotating the substrate, and the by-products generated after the reaction and the remaining etching solution can be removed from the substrate by the rotation of the substrate. In such etching processes, methods such as supplying a high-temperature treated etchant onto the substrate or heating the substrate may be applied to increase the reaction rate between the thin film on the substrate and the etchant. In the method of heating the substrate, since the substrate is heated while supplying the etchant, if there is a temperature difference between the etchant and the substrate, there is a problem in that the etching efficiency decreases due to reduced heating efficiency caused by high energy consumption required for uniform heating. Additionally, during the etching process, the required degree of etching may vary depending on the location on the substrate, but there are currently difficulties in solving these problems. FIG. 1 is an exemplary diagram showing a substrate processing apparatus according to one embodiment of the present invention. Figure 2 is a graph showing the etch rate according to the thickness of the phosphoric acid liquid film on the substrate at different temperatures when phosphoric acid ( H₃PO₄ ) is used as the etching solution. Figure 3 is a graph showing the change in thickness of the liquid film on the substrate according to position and rotational speed when phosphoric acid is used as the etching solution. Figure 4 is a graph showing the liquid film thickness and etching degree of the etching solution on the substrate according to the rotation speed of the substrate. FIGS. 5 to 8 are flowcharts of a substrate processing method according to one embodiment. FIG. 9 is an exemplary diagram showing a substrate processing apparatus according to another embodiment of the present invention. Hereinafter, preferred embodiments are described in detail with reference to the attached drawings so that those skilled in the art can easily implement the present invention. However, in describing the preferred embodiments of the present invention in detail, if it is determined that a detailed description of related known functions or configurations may unnecessarily obscure the essence of the present invention, such detailed description is omitted. In addition, the same reference numerals are used throughout the drawings for parts having similar functions and operations. In this specification, terms such as 'upper,' 'upper surface,' 'lower,' 'lower surface,' 'center,' and 'perimeter' are based on the 'upper,' 'upper surface,' 'lower,' 'lower surface,' 'center,' and 'perimeter' of the corresponding component, and in reality, they may vary depending on the direction in which the component is arranged. Additionally, throughout the specification, when a part is described as being 'connected' to another part, this includes not only cases where they are 'directly connected,' but also cases where they are 'indirectly connected' with other components in between. Furthermore, 'including' a component means that, unless specifically stated otherwise, it does not exclude other components but may include additional components. The substrate processing device according to the present invention is a device for processing a substrate and can be used in various processes such as an etching process, a photolithography process, and a cleaning process. For example, the substrate processing device of the present invention can be used in an etching process, specifically, by supplying an etching solution to the substrate using an etching solution supply unit to process the substrate, and can also be used in other substrate processing processes such as a photolithography process and a cleaning process. Embodiments of the present invention will be described in detail below with reference to the drawings. Example 1 FIG. 1 is an exemplary diagram showing a substrate processing apparatus according to Example 1 of the present invention. Referring to FIG. 1, the substrate processing apparatus (100) of the present invention can be used in an etching process during a semiconductor manufacturing process and can be used to remove a thin film (F) formed on a substrate (W), such as a silicon wafer. For example, a thin film (F) containing silicon nitride may be formed on the substrate (W), and the substrate processing apparatus (100) may supply an etching solution (E) , such as phosphoric acid ( H₃PO₄ ), onto the substrate (F) an