KR-102964289-B1 - Temperature control device, substrate processing device, and liquid volume control method

KR102964289B1KR 102964289 B1KR102964289 B1KR 102964289B1KR-102964289-B1

Abstract

The temperature control device comprises a main tank for storing a heat medium, a first sub-tank located above a reference position of the liquid level of the main tank, a second sub-tank located below a reference position of the main tank, a first connecting pipe connecting the first sub-tank and the main tank and having a first valve, a second connecting pipe connecting the second sub-tank and the main tank and having a second valve, and a control unit, wherein the control unit controls the first valve and the second valve according to the liquid volume of the main tank.

Inventors

고바야시, 케이

Assignees

도쿄엘렉트론가부시키가이샤

Dates

Publication Date: 20260513
Application Date: 20221013
Priority Date: 20211015

Claims (18)

It is a temperature control device, and A main tank for storing the heat medium, and A first sub-tank located above the reference position of the liquid level of the main tank, and A second sub-tank located below the reference position of the main tank, and A first connecting pipe connecting the first sub-tank and the main tank and having a first valve, and A second connecting pipe connecting the second sub-tank and the main tank and having a second valve, and It has a control unit, The above control unit controls the first valve and the second valve according to the liquid volume of the main tank, Temperature control device.
In paragraph 1, A temperature control device wherein the above liquid amount is a liquid amount based on the liquid level of the main tank, which is detected by the sensor that detects the liquid level of the heat medium using a sensor installed in the main tank.
In paragraph 1, The above first connecting pipe is a temperature control device that is connected to the main tank and the first sub-tank, respectively, at a position above the reference position of the main tank.
In any one of paragraphs 1 through 3, The bottom portion of the first sub-tank is a temperature control device located above the reference position of the main tank.
In any one of paragraphs 1 through 3, The above second connecting pipe is a temperature control device that is connected to the main tank and the second sub-tank, respectively, at a position lower than the reference position of the main tank.
In any one of paragraphs 1 through 3, The upper part of the second sub-tank is a temperature control device located below the reference position of the main tank.
In any one of paragraphs 1 through 3, The first sub-tank is a temperature control device positioned on the side of the main tank.
In any one of paragraphs 1 through 3, The first sub-tank is a temperature control device positioned on the upper side of the main tank.
In any one of paragraphs 1 through 3, The second sub-tank is a temperature control device positioned on the side of the main tank.
In any one of paragraphs 1 through 3, The above second sub-tank is a temperature control device disposed on the lower side of the above main tank.
In any one of paragraphs 1 through 3, A temperature control device wherein the first valve is controlled to open when the liquid level of the main tank reaches the replenishment start position and to close when it reaches the reference position.
In any one of paragraphs 1 through 3, The second valve is a temperature control device that is controlled to open when the liquid level of the main tank reaches the recovery start position and to close when it reaches the reference position.
In any one of paragraphs 1 through 3, A temperature control device having piping and a pump for moving a heat medium from the second sub-tank to the first sub-tank.
It is a substrate processing device, and The above substrate processing device includes a temperature control device that controls the temperature of a member to be temperature controlled, and The above temperature control device is, A main tank for storing the heat medium, and A first sub-tank located above the reference position of the liquid level of the main tank, and A second sub-tank located below the reference position of the main tank, and A first connecting pipe connecting the first sub-tank and the main tank and having a first valve, and A second connecting pipe connecting the second sub-tank and the main tank and having a second valve, and It has a control unit, The above control unit controls the first valve and the second valve according to the liquid volume of the main tank, Substrate processing device.
In Paragraph 14, A substrate processing device, wherein the above liquid amount is a liquid amount based on the liquid level of the main tank detected by the sensor that detects the liquid level of the heat medium using a sensor installed in the main tank.
It is a substrate processing device, and The above substrate processing device includes a temperature control device that controls the temperature of a member to be temperature controlled, and The above temperature control device is, Multiple temperature control units, and It has a control unit, A plurality of the above temperature control units, A main tank for storing the heat medium, and A first sub-tank located above the reference position of the liquid level of the main tank, and A second sub-tank located below the reference position of the main tank, and A first connecting pipe connecting the first sub-tank and the main tank and having a first valve, and Each of the above-mentioned second sub-tank and the above-mentioned main tank is connected and each is equipped with a second connecting pipe having a second valve, and The above control unit controls the first valve and the second valve according to the liquid volume of the main tank for each of the plurality of temperature control units. Substrate processing device.
In paragraph 15, A substrate processing device, wherein the above liquid amount is a liquid amount based on the liquid level of the main tank detected by the sensor that detects the liquid level of the heat medium using a sensor installed in the main tank.
As a method for controlling the liquid volume of a temperature control device, The above temperature control device is, A main tank for storing the heat medium, and A first sub-tank located above the reference position of the liquid level of the main tank, and A second sub-tank located below the reference position of the main tank, and A first connecting pipe connecting the first sub-tank and the main tank and having a first valve, and It has a second connecting pipe that connects the second sub-tank and the main tank and is equipped with a second valve, Controlling the first valve and the second valve according to the liquid volume of the main tank. Liquid volume control method.

Description

Temperature control device, substrate processing device, and liquid volume control method The present disclosure relates to a temperature control device, a substrate processing device, and a liquid volume control method. In a substrate processing device, the temperature is controlled by a chiller that circulates a heat medium through a flow path within a mounting base using a pump. The amount of liquid in the tank is managed during the operation of the chiller. For example, it has been proposed that a reserve tank be positioned above the cooling-side tank and the heating-side tank, and that the reserve tank be connected to the cooling-side tank and the heating-side tank by piping to enable the replenishment of the heat medium (Patent Document 1). In addition, it has been proposed to supply a heat medium from a common tank connected to the low-temperature storage tank and the high-temperature storage tank (Patent Document 2). FIG. 1 is a schematic cross-sectional view showing an example of a substrate processing apparatus according to one embodiment of the present disclosure. FIG. 2 is a drawing showing an example of a temperature control device of the present embodiment. FIG. 3 is a flowchart showing an example of liquid volume control processing of the present embodiment. FIG. 4 is a diagram illustrating an example of the operation when replenishing the heat medium of the present embodiment. FIG. 5 is a diagram illustrating an example of the operation during the recovery of the heat medium of the present embodiment. FIG. 6 is a drawing showing an example of the arrangement of a sub-tank of Variation Example 1. FIG. 7 is a drawing showing an example of a pump connection of Variant Example 2. FIG. 8 is a diagram showing an example of a temperature control device of Variant Example 3. FIG. 9 is a drawing showing an example of a temperature control device of Variant Example 4. FIG. 10 is a drawing showing an example of a connection between sub-tank of Variant Example 5. In the following, embodiments of the disclosed temperature control device, substrate processing device, and liquid volume control method will be described in detail based on the drawings. Additionally, the disclosed technology is not limited by the following embodiments. In the operation of a chiller, when the liquid volume of the heat medium in the tank decreases, the substrate processing unit is temporarily stopped, and an operator replenishes the heat medium in the tank. Furthermore, when an operator manually replenishes the heat medium, there is a margin of error in the replenishment process, so it is necessary to adopt a wide range of appropriate liquid volume values. Therefore, it is expected that the liquid volume of the heat medium can be highly automatically managed without stopping the substrate processing unit. [Configuration of the substrate processing device (1)] FIG. 1 is a schematic cross-sectional view showing an example of a substrate processing apparatus according to one embodiment of the present disclosure. The substrate processing apparatus (1) is a plasma etching apparatus having, for example, parallel plate electrodes. The substrate processing apparatus (1) comprises a device body (10) and a control device (11). The device body (10) is composed of a material such as, for example, aluminum and has a processing vessel (12) having, for example, an approximate cylindrical shape. The processing vessel (12) has an anodic oxidation treatment performed on its inner wall surface. Additionally, the processing vessel (12) is securely grounded. On the bottom portion of the processing vessel (12), a roughly cylindrical support member (14) made of an insulating material, such as quartz, is installed. The support member (14) extends vertically from the bottom portion of the processing vessel (12) within the processing vessel (12) (for example, toward the direction of the upper electrode (30)). A mounting platform (PD) is installed inside the processing vessel (12). The mounting platform (PD) is supported by a support member (14). The mounting platform (PD) holds a wafer (W) on the upper surface of the mounting platform (PD). The wafer (W) is an example of a temperature-controlled object. The mounting platform (PD) has an electrostatic chuck (ESC) and a lower electrode (LE). The lower electrode (LE) is composed of a metal material, such as aluminum, for example, and has a roughly disc shape. The electrostatic chuck (ESC) is placed on the lower electrode (LE). The lower electrode (LE) is an example of a heat exchanger that performs heat exchange with the temperature-controlled object. The electrostatic chuck (ESC) has a structure in which an electrode (EL), which is a conductive film, is placed between a pair of insulating layers or between a pair of insulating sheets. A DC power source (17) is electrically connected to the electrode (EL) through a switch (SW). The electrostatic chuck (ESC) attracts a wafer (W) to the upper surface of the