KR-102964396-B1 - ULTRA HIGH PAST PLUSED IV SOLUTION APPARATUS FOR RESPONDING WGMFU AND SEMICONDUCTOR INCLUDING THE SAME

KR102964396B1KR 102964396 B1KR102964396 B1KR 102964396B1KR-102964396-B1

Abstract

An Ultra High Past Plused IV solution device corresponding to WGFMU according to one aspect of the present invention can be electrically connected to a signal generator that supplies a test signal to a semiconductor test element. Such an Ultra High Past Plused IV solution device corresponding to WGFMU according to one aspect of the present invention includes: a substrate; a probe part connected to the substrate and configured to contact the semiconductor test element to supply the test signal to the semiconductor test element; a signal pattern part formed of a conductive layer formed on the surface of the substrate and electrically connected to the probe part to transmit the test signal to the probe part; a ground pattern part formed of a conductive layer formed on the surface of the substrate and configured to be insulated from the signal pattern part and electrically connected to ground; and an insulating pattern part formed along the boundary between the signal pattern part and the ground pattern part to insulate the signal pattern part and the ground pattern part.

Inventors

김명수

Assignees

엠에스테크에스아이 주식회사

Dates

Publication Date: 20260513
Application Date: 20240223
Priority Date: 20240119

Claims (14)

In a WGFMU-compatible Ultra High Past Plused IV solution device electrically connectable to a signal generator that supplies a test signal to a semiconductor test element, Substrate part; A probe connected to the substrate and configured to contact the semiconductor test element and supply the test signal to the semiconductor test element; A signal pattern portion comprising a conductive layer formed on the surface of the substrate portion and electrically connected to the probe portion to transmit the test signal to the probe portion; A ground pattern portion formed of a conductive layer on the surface of the substrate portion and configured to be insulated from the signal pattern portion and electrically connected to ground; It includes an insulating pattern portion formed along the boundary of the signal pattern portion and the ground pattern portion to insulate the signal pattern portion and the ground pattern portion, and It further includes a signal terminal portion provided on the substrate portion and configured to be electrically connected to the signal generator and the signal pattern portion, and The surface of the substrate portion on which the signal pattern portion is formed and the surface of the substrate portion on which the ground pattern portion is formed are identical to each other, and The above signal pattern section includes a first line section electrically connected to the signal terminal section and a second line section electrically connected to the first line section and the probe section, and A WGFMU-compatible Ultra High Past Plused IV solution device characterized in that the ground pattern portion surrounds the first line portion.
In paragraph 1, The second line portion is formed along one edge of the substrate portion, and WGFMU-compatible Ultra High Past Plused IV solution device characterized in that the longitudinal line width of the probe portion of the second line portion is greater than the line width of the first line portion, and the probe portion contacts the entire one-sided edge where the second line portion is formed.
In paragraph 2, It further includes a ground terminal portion spaced apart from the signal terminal portion and provided on the substrate portion, and configured to be electrically connected to the ground pattern portion. A WGFMU-compatible Ultra High Past Plused IV solution device characterized by having a ground pattern portion formed in the area of the substrate portion between the signal terminal portion and the ground terminal portion.
In any one of paragraphs 1 through 3, WGFMU-compatible Ultra High Past Plused IV solution device characterized by the ground pattern portion being formed between the edges of the substrate portion facing the insulating pattern portion.
In paragraph 1, A WGFMU-compatible Ultra High Past Plused IV solution device characterized in that the signal pattern portion and the ground pattern portion are composed of conductive layers of the same thickness and of the same material.
In paragraph 1, WGFMU-compatible Ultra High Past Plused IV solution device characterized by the above substrate portion including a ceramic substrate having a lower dielectric constant and superior heat resistance compared to a PCB substrate.
One or more WGFMU-compatible Ultra High Past Plused IV solution devices of claim 1; A chuck portion configured to accommodate the above-mentioned semiconductor test element; A semiconductor test device comprising a position setting unit configured to adjust the position of the WGFMU-compatible Ultra High Past Plused IV solution device so as to bring the probe portion of the WGFMU-compatible Ultra High Past Plused IV solution device into contact with the electrode pad of the semiconductor test element.
In Paragraph 7, The above WGFMU-compatible Ultra High Past Plused IV solution device further includes a signal terminal portion provided on the substrate portion and configured to be electrically connected to the signal generator and the signal pattern portion, The above signal pattern section includes a first line section electrically connected to the signal terminal section and a second line section electrically connected to the first line section and the probe section. The second line portion is formed along one edge of the substrate portion, and A semiconductor test device characterized in that the probe portion in the longitudinal direction of the second line portion is larger than the line portion of the first line portion, and the probe portion contacts the entire one-sided edge where the second line portion is formed.
In paragraph 8, The above WGFMU-compatible Ultra High Past Plused IV solution device further includes a ground terminal portion that is spaced apart from the signal terminal portion and provided on the substrate portion, and configured to be electrically connected to the ground pattern portion. A semiconductor test device characterized by having a ground pattern portion formed in the area of the substrate portion between the signal terminal portion and the ground terminal portion.
In any one of paragraphs 7 through 9, A semiconductor test device characterized by the ground pattern portion being formed between the edge of the substrate portion facing the insulating pattern portion.
In Paragraph 7, A semiconductor test device characterized in that the signal pattern portion and the ground pattern portion are composed of conductive layers of the same thickness and made of the same material.
In Paragraph 7, A semiconductor test device characterized by the above substrate portion including a ceramic substrate having a lower dielectric constant and superior heat resistance compared to a PCB substrate.
In Paragraph 7, Each of the above plurality of WGFMU-compatible Ultra High Past Plused IV solution devices further includes a signal terminal and a ground terminal, and The above signal terminal portion is provided on the substrate portion and configured to be electrically connected to the signal generator and the signal pattern portion, and The ground terminal portion is provided on the substrate portion spaced apart from the signal terminal portion and is configured to be electrically connected to the ground pattern portion. The ground terminal portion of each of the above plurality of WGFMU-compatible Ultra High Past Plused IV solution devices is connected to a ground connection line, and A semiconductor test device characterized in that one of the ground terminal portions connected by the ground connection line is connected to the ground terminal of the signal generator.
In Paragraph 13, The above position setting unit includes a structure for mounting the signal generator, and A semiconductor test device characterized in that when the signal generator is mounted to the position setting unit through the structure, the signal generator also moves together with the movement of the position setting unit.

Description

Ultra High Past Plused IV Solution Apparatus for Responding to WGFMU and Semiconductor Test Apparatus Including the Same The present invention relates to an Ultra High Past Plused IV solution device corresponding to a WGFMU and a semiconductor test device including the same, and more specifically, to an Ultra High Past Plused IV solution device corresponding to a WGFMU (Waveform Generator Frequency Measure Unit) that provides pulses for current-voltage measurement of a semiconductor test device and a semiconductor test device including the same. Tests to determine voltage-current characteristics can be performed on semiconductor test devices, which are Device Under Test (DUT). Measurement of a typical voltage-current curve (IV Curve) was performed by applying a slow pulse of DC 100V or McIro band to a semiconductor test device. Recently, with the widespread adoption of secondary batteries and electric vehicles that use high voltage and high current, there are increasing cases where semiconductor test devices also need to handle high voltage and high current. Accordingly, a voltage of DC 200V or higher or high-frequency pulses must be applied to the semiconductor test device, but in such cases, noise increases, which may cause the semiconductor test device to operate abnormally or be damaged. To address this, equipment companies such as Keysight are releasing WGMFU products capable of applying high voltage/high-speed pulses. Recently released WGMFU products can supply pulses in the Nano band of 10V or higher, enabling accurate measurement of IV curves. However, when high-voltage/high-speed pulses are supplied from such a high-performance WGMFU through a conventional probe, noise is generated, making it difficult to accurately measure voltage-current characteristics. Accordingly, there is a demand for an Ultra High Past Plused IV solution device, a probe capable of responding to WGFMU. FIGS. 1 and 2 show an Ultra High Past Plused IV solution device corresponding to WGFMU according to an embodiment of the present invention. Figure 3 shows the process of forming the signal pattern section, the ground pattern section, and the insulation pattern section. Figure 4 shows a typical probe device. Figure 5 shows a signal waveform obtained through a WGFMU-compatible Ultra High Past Plused IV solution device according to an embodiment of the present invention and a signal waveform obtained through a general probe device. Figure 6 is intended to explain the relationship between the probe section and the second line section. FIGS. 7 to 9 show a semiconductor test device according to an embodiment of the present invention. Embodiments of the present invention will be described in detail below with reference to the attached drawings. However, it will be readily apparent to those skilled in the art that the attached drawings are provided merely to facilitate the disclosure of the content of the present invention, and that the scope of the present invention is not limited to the scope of the attached drawings. Furthermore, the terms used in this application are used merely to describe specific embodiments and are not intended to limit the invention. The singular expression includes the plural expression unless the context clearly indicates otherwise. In this application, terms such as "comprising" or "having" are intended to specify the existence of the features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, and should be understood as not precluding the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof. FIGS. 1 and 2 show an Ultra High Past Plused IV solution device corresponding to WGFMU according to an embodiment of the present invention. The Ultra High Past Plused IV solution device corresponding to WGFMU according to an embodiment of the present invention can be electrically connected to a signal generator that supplies a test signal to a semiconductor test device. The test signal may be a current signal or a voltage signal for testing the operating characteristics of a semiconductor test device, but is not limited thereto. The WGFMU-compatible Ultra High Past Plused IV solution device corresponds to a probe device and can be used to contact the electrode pad of a semiconductor test device to supply a test signal to the semiconductor test device or to detect the output signal of the semiconductor test device in response to the supply of the test signal. The signal generator corresponds to a WGFMU and can supply a high-frequency pulse signal as a test signal. The signal generator can supply a pulse signal in the 10 MHz to 100 MHz band, but the present invention is not limited to such frequency bands. In addition, the signal generator can apply a voltage of several volts to several hundred volts. The WGFMU-compatible Ultra High Past Plused IV solution device of FIGS. 1 and 2 may have different positi