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KR-102964447-B1 - Device including a low index coating and a radiation correction layer

KR102964447B1KR 102964447 B1KR102964447 B1KR 102964447B1KR-102964447-B1

Abstract

A semiconductor device having a plurality of layers that are deposited on a substrate and extend in at least one lateral aspect defined by its lateral axis comprises at least one low(er)-index coating disposed on the surface of a first layer and at least one EM radiation-modifying layer comprising at least one particle structure containing a deposited material embedded within the at least one low(er)-index coating. Embedding at least one particle structure of the at least one EM radiation-modifying layer within the at least one low(er)-index coating at least partially modifies the absorption spectrum of the at least one EM radiation-modifying layer for EM radiation passing through at least a portion of the EM spectrum at a non-zero angle with respect to the lateral aspect. A lower part comprising a first at least one low(er)-index coating may be disposed between the surface of the first layer and the at least one EM radiation-modifying layer, and a second part comprising a second at least one low(er)-index coating may be disposed on the at least one EM radiation-modifying layer.

Inventors

  • 헬랜더, 마이클
  • 왕, 지빈
  • 창, 이-루
  • 왕, 치
  • 장, 잉지에

Assignees

  • 오티아이 루미오닉스 인크.

Dates

Publication Date
20260513
Application Date
20211011
Priority Date
20201009

Claims (20)

  1. A semiconductor device having a plurality of layers deposited on a substrate and extending in at least one transverse aspect defined by its transverse axis, At least one low(er)-index coating comprising a low index material disposed on the surface of a first layer; A semiconductor device comprising: at least one electromagnetic (EM) radiation-modifying layer comprising at least one particle structure containing a deposited material embedded within at least one lower (less than) exponential coating, wherein embedding the at least one particle structure of the at least one EM radiation-modifying layer within the at least one lower (less than) exponential coating at least partially modifies the absorption spectrum of the at least one EM radiation-modifying layer for EM radiation passing at a non-zero angle with respect to the transverse mode in at least a portion of the EM spectrum through this.
  2. A semiconductor device according to claim 1, wherein the at least one lower (lower) index coating comprises a lower part disposed between the first layer surface and the at least one EM radiation modification layer and an upper part disposed on the at least one EM radiation modification layer.
  3. A semiconductor device according to paragraph 2, wherein the lower part comprises a first coating and the upper part comprises a second coating.
  4. A semiconductor device according to any one of claims 1 to 3, further comprising a higher-index medium disposed at an index interface with an exposed layer surface of at least one lower (lower) index coating, wherein the EM radiation correction layer is disposed between the index interface and the first layer surface.
  5. In paragraph 4, the semiconductor device wherein the high index medium comprises an organic compound.
  6. In paragraph 4, the semiconductor device comprises a capping layer of the device, wherein the high index medium comprises the capping layer of the device.
  7. A semiconductor device according to claim 4, further comprising an air gap disposed beyond the high index medium.
  8. A semiconductor device according to claim 4, wherein the high-index medium comprises a higher-index layer deposited on the index interface.
  9. In paragraph 4, the high index medium is a substantially transparent semiconductor device.
  10. In paragraph 4, the semiconductor device wherein the high index medium comprises lithium fluoride (LiF).
  11. A semiconductor device according to claim 4, wherein the extinction coefficient of the high-exponential medium is one or less of about 0.1, 0.08, 0.05, 0.03, and 0.01 in at least the lower range of the visible range of the EM spectrum.
  12. A semiconductor device according to any one of claims 1 to 3, wherein the EM radiation correction layer comprises a discontinuous layer having at least one particle structure.
  13. A semiconductor device according to paragraph 3, wherein the first coating is composed of a first low index material and the second coating is composed of a second low index material.
  14. In paragraph 13, the first low index material and the second low index material are the same semiconductor device.
  15. A semiconductor device according to claim 13 or 14, wherein at least one of the first coating and the first low index material, and at least one of the second coating and the second low index material, has a refractive index of one or less of about 1.7, 1.6, 1.5, 1.45, 1.4, 1.35, 1.3, and 1.25.
  16. A semiconductor device according to claim 13 or 14, wherein at least one of the first coating and the first low index material, and at least one of the second coating and the second low index material have a refractive index of about 1.2 to 1.6, 1.2 to 1.5, 1.25 to 1.45, and 1.25 to 1.4.
  17. A semiconductor device according to claim 13 or 14, wherein at least one of the first coating and the first low index material, and at least one of the second coating and the second low index material, has an extinction coefficient of one or less of about 0.1, 0.08, 0.05, 0.03, and 0.01 in the visible wavelength range of the EM spectrum.
  18. A semiconductor device according to any one of claims 1 to 3, wherein at least one of the at least one low (lower) index coating is substantially transparent.
  19. A semiconductor device according to any one of claims 1 to 3, wherein the average layer thickness of at least one of the at least one lower (lower) index coating is one or less of about 60 nm, 50 nm, 40 nm, 30 nm, 20 nm, 10 nm, 8 nm, and 5 nm.
  20. A semiconductor device according to any one of claims 1 to 3, wherein the absorption capability of the EM radiation modification layer is at least one of an increase in absorption, a decrease in absorption, an upward shift in the wavelength range, a downward shift in the wavelength range, and any combination of any of these of the absorption spectrum of EM radiation passing through the device.

Description

Device including a low index coating and a radiation correction layer Related applications The present application comprises U.S. Provisional Patent Application No. 63/090,098 filed October 9, 2020; U.S. Provisional Patent Application No. 63/107,393 filed October 29, 2020; U.S. Provisional Patent Application No. 63/122,421 filed December 7, 2020; U.S. Provisional Patent Application No. 63/141,857 filed January 26, 2021; U.S. Provisional Patent Application No. 63/153,834 filed February 25, 2021; U.S. Provisional Patent Application No. 63/158,185 filed March 8, 2021; U.S. Provisional Patent Application No. 63/163,453 filed March 19, 2021; and April 2021 Claiming the benefit of priority to U.S. Provisional Patent Application No. 63/181,100 filed on the 28th, the contents of each thereof are incorporated herein by reference in their entirety. Technology field The present disclosure relates to a stacked semiconductor device, in particular to an optoelectronic device having first and second electrodes separated by semiconductor layers and a conductive deposited material deposited thereon, wherein the patterning coating may be and/or may act as a nucleation-inhibiting coating (NIC) and/or the optoelectronic device patterned using such NIC. In optoelectronic devices such as organic light-emitting diodes (OLEDs), at least one semiconductor layer is placed between a pair of electrodes, such as an anode and a cathode. The anode and cathode are electrically coupled to a power source and generate holes and electrons, respectively, that move toward each other through at least one semiconductor layer. When a pair of holes and electrons combine, a photon can be emitted. An OLED display panel may include multiple (sub)pixels, each of which has an associated electrode pair. Various layers and coatings of such a panel are typically formed by a vacuum-based deposition process. In some applications, it may be aimed to provide a conductive and/or electrode coating as a pattern for each (sub-)pixel of the panel across either or both of the lateral aspect and cross-sectional aspect of the panel by forming device features, such as electrodes and/or conductive elements electrically coupled thereto, without limitation by selectively depositing at least one thin film of a conductive coating during the OLED manufacturing process. In some applications, the goal may be to make the device substantially transparent while still allowing it to emit light. In some applications, the device includes multiple light-transmitting regions arranged between multiple light-emitting regions or subpixels. Since light-emitting regions generally include layers, coatings, and/or components that attenuate or suppress the transmission of external light through these regions, light-transmitting regions are generally provided in non-light-emitting regions of a display panel where the presence of such layers, coatings, and/or components that attenuate or suppress the transmission of external light can be omitted. One method to do this, in some non-limiting applications, involves the interposition of a fine metal mask (FMM) during the deposition of a deposition material, including an electrode and/or a conductive element electrically coupled thereto and/or a radiation-modifying layer. However, such deposition materials typically have relatively high evaporation temperatures, which affects the ability to reuse the FMM and/or the accuracy of the patterns that can be achieved, and entails increased cost, effort, and complexity. In some non-limiting examples, one method for doing so involves forming a pattern by removing unwanted regions of the electrode material after depositing the electrode material, for example, using a laser drilling process. However, such removal processes often involve the generation and/or presence of debris that can affect the yield of the manufacturing process. Additionally, this method may not be suitable for use in some applications and/or with some devices having specific topographic features. In some non-limiting applications, it may be aimed at providing an improved mechanism along the optical path through at least part of the device by increasing the transmission of photons and/or decreasing the absorption of photons in at least a sub-wavelength range of the electromagnetic (EM) spectrum, including without limitation, providing selective deposition of a deposition material. In some non-limiting applications, it may be aimed at providing a mechanism for depositing a thin dispersion layer of metal NPs in optoelectronic devices, which can affect the performance of the device in terms of optical properties, performance, stability, reliability, and/or lifetime. Hereinafter, examples of the present disclosure will be described with reference to the following drawings, in which the same reference numerals in different drawings indicate the same and/or, in some non-limiting examples, similar and/or corresponding elements, wherein:FIG. 1 is a