KR-102964550-B1 - Apparatus for processing substrate

KR102964550B1KR 102964550 B1KR102964550 B1KR 102964550B1KR-102964550-B1

Abstract

The present invention relates to a substrate processing apparatus, and more specifically, to a substrate processing apparatus in which different gases are injected stepwise into a plurality of reaction chambers provided in a process chamber. A substrate processing apparatus according to an embodiment of the present invention comprises a process chamber including a plurality of reaction chambers for processing a substrate, a plurality of gas transfer lines providing a transfer path for a plurality of process gases, a plurality of gas branch lines branched from each of the plurality of gas transfer lines and providing a transfer path for a process gas supplied to each of the plurality of reaction chambers, a line valve provided in each of the plurality of gas branch lines to allow or block the supply of process gas to a corresponding reaction chamber, an injection port disposed in each of the plurality of reaction chambers and provided at the end of each of the plurality of gas branch lines to inject the supplied process gas into the interior of the corresponding reaction chamber, and a control unit that controls the line valves so that a pre-set process gas among the plurality of process gases is supplied to each of the plurality of reaction chambers, thereby providing different process gases to each of the plurality of reaction chambers.

Inventors

김상엽
이백주
서동원
천민호

Assignees

한화모멘텀 주식회사
한화세미텍 주식회사

Dates

Publication Date: 20260512
Application Date: 20220617

Claims (12)

A process chamber comprising a plurality of reaction chambers for processing a substrate; Multiple gas transfer lines providing multiple process gas transfer paths; A plurality of gas branch lines that branch off from each of the plurality of gas transfer lines and provide a transfer path for process gas supplied to each of the plurality of reaction chambers; Line valves provided in each of the plurality of gas branch lines above to allow or block the supply of process gas to the corresponding reaction chamber; A spray port disposed in each of the plurality of reaction chambers and provided at the end of each of the plurality of gas branch lines for spraying the supplied process gas into the interior of the corresponding reaction chamber; and A control unit that controls the line valve so that a pre-set process gas among the plurality of process gases is supplied to each of the plurality of reaction chambers, thereby providing different process gases to each of the plurality of reaction chambers, is included. The above control unit controls the line valve so that process gas is supplied to all reaction chambers equipped in the process chamber at the same time, and The above injection port is, A plurality of main injection ports disposed in each of the plurality of reaction chambers above to supply the process gas; and It includes a sub-injection port provided in at least some of the plurality of reaction chambers above for injecting continuous gas, and The number of the above sub-injection ports is less than the number of the above main injection ports, and The above continuous gas forms an air curtain at the opening formed between adjacent reaction chambers to block the movement of process gas between the adjacent reaction chambers, and The upper end of the above sub-spray port is formed on the lower side relative to the substrate mounting surface of the substrate support member that supports the substrate, and The above sub-injection port is a substrate processing device that injects the continuous gas to the side and lower side of the substrate support.
In Article 1, A substrate processing apparatus in which the number of the plurality of reaction chambers and the number of the plurality of process gases are formed to be the same.
In Article 1, A substrate processing device in which the control unit controls the line valve so that one corresponding gas among the plurality of process gases is supplied to each of the plurality of reaction chambers at the same time.
In Article 1, A substrate processing device in which the above-described control unit controls the line valve so that different process gases are supplied to each of the plurality of reaction chambers at the same time.
In Article 1, A substrate processing device in which the above-described control unit controls the line valve so that a plurality of process gases are supplied to each of the plurality of reaction chambers in a pre-set sequence of process gases.
In Article 1, The above plurality of process gases is a substrate processing apparatus comprising a source gas, a source purge gas, a reaction gas, and a reaction purge gas.
In Article 6, A substrate processing device in which the control unit controls the line valve so that the plurality of process gases are supplied to each of the plurality of reaction chambers in the order of source gas, source purge gas, reaction gas, and reaction purge gas.
In Article 6, The above plurality of process gases further include the continuous gas, and A substrate processing device in which the above-described control unit controls the line valve so that the continuous gas is supplied to the corresponding reaction chamber when the source gas, source purge gas, reaction gas, or reaction purge gas is supplied to the corresponding reaction chamber.
In Article 8, A substrate processing device in which the above sub-injection port is provided at the end of a gas branch line that provides a transport path for the continuous gas among the plurality of gas branch lines and injects the continuous gas.
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In Article 9, The above substrate support is movable in the vertical direction inside the reaction chamber, and A substrate processing apparatus in which the above continuous gas forms an air curtain in an opening formed between adjacent reaction chambers by the movement of the substrate support, thereby blocking the movement of process gas between the adjacent reaction chambers.
In Article 1, A substrate processing apparatus further comprising a gas discharge line for discharging process gas supplied to the plurality of reaction chambers.

Description

Apparatus for processing substrate The present invention relates to a substrate processing apparatus, and more specifically, to a substrate processing apparatus that injects different gases in stages into a plurality of reaction chambers provided in a process chamber. Chemical Vapor Deposition (CVD) or Atomic Layer Deposition (ALD) may be used to deposit a thin film on a substrate. In the case of chemical vapor deposition or atomic layer deposition, a source gas can cause a chemical reaction on the surface of the substrate to form a thin film. In particular, in the case of atomic layer deposition, since a single layer of source gas attached to the surface of the substrate forms the thin film, it is possible to form a thin film with a thickness similar to the diameter of an atom. Here, in the case of atomic layer deposition, since a thin film with a thickness similar to the diameter of an atom (hereinafter referred to as a unit thin film) is formed, the step of forming the unit thin film may need to be repeated several times if a thin film of a uniform thickness is to be formed. As such, forming a thin film using atomic layer deposition takes significantly more time compared to using chemical vapor deposition. Therefore, there is a need for an invention that enables the formation of more thin films within a unit time when forming thin films on a substrate by atomic layer deposition. FIG. 1 is a drawing showing a substrate processing apparatus according to an embodiment of the present invention. Figure 2 is a diagram illustrating that a gas branch line is connected to a reaction chamber. Figure 3 is a diagram illustrating the process cycle. Figure 4 is a drawing showing a process table. Figure 5 is a diagram showing the process gas being supplied to each reaction chamber in the first stage. Figure 6 is a diagram showing the process gas being supplied to each reaction chamber in the second stage. Figure 7 is a diagram showing the process gas being supplied to each reaction chamber in the third stage. Figure 8 is a diagram showing the process gas being supplied to each reaction chamber in the fourth stage. FIG. 9 is a drawing showing a substrate processing apparatus according to another embodiment of the present invention. Figure 10 is a diagram illustrating the movement of the substrate support. Figure 11 is a diagram showing the process cycle. Figure 12 is a drawing showing a process table. Figure 13 is a diagram showing the process gas being supplied to each reaction chamber. FIG. 14 is a diagram illustrating the arrangement relationship between the sub-spray port and the substrate support. Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The advantages and features of the present invention, and the methods for achieving them, will become clear by referring to the embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below but can be implemented in various different forms. These embodiments are provided merely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims. Throughout the specification, the same reference numerals refer to the same components. Unless otherwise defined, all terms used in this specification (including technical and scientific terms) may be used in a meaning that is commonly understood by those skilled in the art to which the present invention pertains. Additionally, terms defined in commonly used dictionaries are not to be interpreted ideally or excessively unless explicitly and specifically defined otherwise. FIG. 1 is a drawing showing a substrate processing apparatus according to an embodiment of the present invention, and FIG. 2 is a drawing explaining that a gas branch line is connected to a reaction chamber. Referring to FIGS. 1 and 2, a substrate processing apparatus (10) according to an embodiment of the present invention comprises a process chamber (100), a gas tank (210, 220, 230, 240), a gas transfer line (310, 320, 330, 340), a gas branch line (311, 321, 331, 341), a line valve (400), a gas discharge line (500), and a control unit (600). The process chamber (100) provides a process processing space for processing a substrate (W). In the present invention, the process chamber (100) may include a plurality of reaction chambers (110, 120, 130, 140) for processing a substrate (W). The plurality of reaction chambers (110 to 140) may include a first reaction chamber (110), a second reaction chamber (120), a third reaction chamber (130), and a fourth reaction chamber (140). Processing of the substrate (W) may be performed in each of the plurality of reaction chambers (110 to 140). Each reaction chamber (110 to 140) may be provided with a substrat