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KR-102964560-B1 - Apparatus and method for processing substrate

KR102964560B1KR 102964560 B1KR102964560 B1KR 102964560B1KR-102964560-B1

Abstract

The present invention relates to a substrate processing apparatus and method, and more specifically, to a substrate processing apparatus and method that controls the supply of power for plasma formation by referring to the injection state of a process gas. A substrate processing device according to an embodiment of the present invention comprises a process chamber providing a process processing space for processing a substrate, a power supply unit supplying RF power for generating plasma to the process chamber, and a control unit controlling the power supply unit by referring to the flow rate of a process gas injected into the process chamber, wherein the control unit controls the power supply unit so that the RF power is supplied after the flow rate of the process gas injected into the process chamber is uniformly formed.

Inventors

  • 강동석

Assignees

  • 한화세미텍 주식회사

Dates

Publication Date
20260512
Application Date
20221006

Claims (8)

  1. A process chamber providing a process processing space for processing a substrate; A power supply unit that supplies RF power for generating plasma to the above process chamber; and It includes a control unit that controls the power supply unit by referring to the flow rate of the process gas injected into the process chamber, The above control unit is, When it is determined that the flow rate of the process gas injected into the process chamber is uniform, the power supply unit is controlled so that the RF power is supplied, and A substrate processing device that controls the power supply unit so that the RF power is not supplied when it is determined that the flow rate of the process gas injected into the process chamber is not uniform.
  2. In Article 1, A substrate processing device in which the control unit controls the power supply unit so that the RF power is not supplied when the duration during which the change in flow rate of the process gas injected into the process chamber exceeds a preset threshold change amount exceeds a preset threshold change time.
  3. In Article 2, A substrate processing device in which the above-described control unit controls the power supply unit so that the RF power is supplied when the duration during which the change in flow rate of the process gas injected into the process chamber is less than or equal to a preset threshold stabilization amount exceeds a preset threshold stabilization time.
  4. In Paragraph 3, A substrate processing device in which the above threshold change amount is set to be greater than or equal to the above threshold stability amount.
  5. In Paragraph 3, A substrate processing device in which the above critical change time is set to be smaller than or equal to the above critical stabilization time.
  6. In Paragraph 3, A substrate processing device including the standard deviation of the above flow rate, wherein the above amount of change in flow rate is the above flow rate.
  7. In Article 1, The above process gas is a substrate processing device containing a precursor.
  8. A step of receiving a flow rate of process gas injected into a process chamber where a process on a substrate is performed; and The method includes the step of controlling the supply of RF power for plasma generation to the process chamber by referring to the flow rate of the process gas injected into the process chamber, wherein The step of controlling the supply of the above RF power is, A step of determining the uniformity of the flow rate of the process gas injected into the process chamber; and The method includes a step of determining whether to supply the RF power to the process chamber by referring to the uniformity of the flow rate of the process gas. A substrate processing method comprising the step of determining whether to supply the RF power to the process chamber by referring to the uniformity of the flow rate of the process gas, wherein if the flow rate of the process gas injected into the process chamber is determined to be uniform, the RF power is supplied to the process chamber, and if the flow rate of the process gas injected into the process chamber is determined to be non-uniform, the RF power is not supplied to the process chamber.

Description

Apparatus and method for processing substrate The present invention relates to a substrate processing apparatus and method, and more specifically, to a substrate processing apparatus and method that controls the supply of power for plasma formation by referring to the injection state of a process gas. Chemical Vapor Deposition (CVD) or Atomic Layer Deposition (ALD) may be used to deposit a thin film on a substrate. In the case of chemical vapor deposition or atomic layer deposition, a source gas can cause a chemical reaction on the surface of the substrate to form a thin film. In particular, in the case of atomic layer deposition, since a single layer of source gas attached to the surface of the substrate forms the thin film, it is possible to form a thin film with a thickness similar to the diameter of an atom. Plasma Enhanced Chemical Vapor Deposition (PECVD) or Plasma Enhanced Atomic Layer Deposition (PEALD) can be used to extend the process temperature range. Since PECVD and PEALD enable processing at lower temperatures compared to PECVD and PEALD, the physical properties of the thin film can be improved. A method utilizing plasma formation involves a process of applying power to an injected process gas to convert it into plasma particles. Meanwhile, if power is applied when the process gas is not injected normally, normal plasma particle formation cannot be performed, and the process may be interrupted. Therefore, there is a need for an invention that enables the formation of normal plasma particles by appropriately setting the timing of power application. FIG. 1 is a drawing showing a substrate processing apparatus according to an embodiment of the present invention. Figure 2 is a diagram showing that the substrate support has moved to the process point. FIG. 3 is a diagram showing a substrate processing method according to an embodiment of the present invention. Figure 4 is a diagram showing that the change in the flow rate of the process gas exceeds the critical change amount. Figure 5 is a diagram showing that the change in the flow rate of the process gas is converted to below the critical stable amount. Figure 6 is a diagram illustrating the relationship between the flow rate of process gas and the power supply. Figure 7 is a diagram illustrating the relationship between the change in flow rate of process gas and the power supply. FIG. 8 is a flowchart of a substrate processing method according to an embodiment of the present invention. Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The advantages and features of the present invention, and the methods for achieving them, will become clear by referring to the embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below but can be implemented in various different forms. These embodiments are provided merely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims. Throughout the specification, the same reference numerals refer to the same components. Unless otherwise defined, all terms used in this specification (including technical and scientific terms) may be used in a meaning that is commonly understood by those skilled in the art to which the present invention pertains. Additionally, terms defined in commonly used dictionaries are not to be interpreted ideally or excessively unless explicitly and specifically defined otherwise. FIG. 1 is a drawing showing a substrate processing apparatus according to an embodiment of the present invention, and FIG. 2 is a drawing showing a substrate support member moved to a process point. Referring to FIGS. 1 and 2, a substrate processing device (10) according to an embodiment of the present invention comprises a process chamber (100), a cover (200), a substrate support (300), a lifting unit (400), a shower head (500), a control unit (600), a pressure control unit (700), and a power supply unit (800). The process chamber (100) provides a process processing space for processing a substrate (W). The process chamber (100) may include an exhaust duct (110), an outlet (120), and a discharge transfer hole (130). The exhaust duct (110) may provide a path for discharging discharges, such as process gas or byproducts, that have entered the process chamber (100) to the outside. For example, the exhaust duct (110) may be arranged in the form of a ring along the inner edge of the process chamber (100). An outlet (120) may be formed at the bottom of the process chamber (100). An exhaust transfer hole (130) may connect the exhaust duct (110) and the outlet (120) to provide a transfer path for exhaust moving from the exhaust duct (110) to the outlet (120). Exhaust transferred from inside the