KR-102964611-B1 - MONOLITHIC THREE-DIMENSIONAL INTEGRATED AMPLIFIER AND MANUFACTURING METHOD THEREOF

KR102964611B1KR 102964611 B1KR102964611 B1KR 102964611B1KR-102964611-B1

Abstract

A monolithic three-dimensional integrated amplifier comprises a base substrate, a first active layer, a passive layer, a dielectric layer, and a second active layer. The first active layer is disposed on the base substrate. The first active layer includes a first multi-finger transistor. A passive layer is disposed on the first active layer. The passive layer includes a capacitor, an inductor, and a resistor. A dielectric layer is disposed on the passive layer. A second active layer is disposed on the dielectric layer. The second active layer includes a second multi-finger transistor. The first multi-finger transistor includes a first semiconductor layer. The second multi-finger transistor includes a second semiconductor layer. The first semiconductor layer includes a group 3 element. The second semiconductor layer includes a group 5 element. Each of the capacitor, inductor, and resistor does not overlap with the first multi-finger transistor and the second multi-finger transistor, respectively.

Inventors

김상현
정재용

Assignees

한국과학기술원

Dates

Publication Date: 20260513
Application Date: 20240503

Claims (10)

Base substrate; A first active layer disposed on the base substrate and comprising a first multi-finger transistor; A passive layer disposed on the first active layer and comprising a capacitor, an inductor, and a resistor; A dielectric layer disposed on the above passive layer; and A second active layer disposed on the dielectric layer and comprising a second multi-finger transistor, and The first multi-finger transistor comprises a first semiconductor layer, and the second multi-finger transistor comprises a second semiconductor layer. A monolithic three-dimensional integrated amplifier in which the first semiconductor layer comprises a group 3 element and the second semiconductor layer comprises a group 5 element, and the capacitor, the inductor, and the resistor each do not overlap with the first multi-finger transistor and the second multi-finger transistor, respectively.
In Article 1, A monolithic three-dimensional integrated amplifier wherein the first multi-finger transistor comprises a plurality of first fingers, the second multi-finger transistor comprises a plurality of second fingers, and the number of the plurality of first fingers is greater than the number of the plurality of second fingers.
In Article 1, A monolithic three-dimensional integrated amplifier comprising a dielectric layer including a first sub-dielectric layer and a second sub-dielectric layer, wherein one surface of the first sub-dielectric layer is bonded to one surface of the second sub-dielectric layer.
In Article 1, A monolithic three-dimensional integrated amplifier in which the resistivity of the resistor of the above passive layer is greater than the resistivity of the capacitor and the resistivity of the inductor, respectively.
In Article 1, A monolithic three-dimensional integrated amplifier in which the first active layer and the passive layer operate as a Power Amplifier (PA), and the second active layer and the passive layer operate as a Low Noise Amplifier (LNA).
A first active layer comprising a first multi-finger transistor is formed on a first base substrate, wherein the first multi-finger transistor comprises a first semiconductor layer comprising a group 3 element, and the first base substrate comprises silicon (Si), in a first active layer formation step; A passive layer is formed on a first active layer, and the passive layer includes a capacitor, an inductor, and a resistor; A first sub-dielectric layer formation step in which a first sub-dielectric layer is formed on the above passive layer; A second semiconductor layer comprising a group 5 element is formed on a second base substrate, and the second base substrate comprises a second semiconductor layer formation step comprising indium phosphide (InP); A second sub-dielectric layer formation step in which a second sub-dielectric layer is formed on the second semiconductor layer; A dielectric layer bonding step in which one surface of the second sub-dielectric layer is bonded to one surface of the first sub-dielectric layer; and A method for manufacturing a monolithic three-dimensional integrated amplifier, comprising a step of forming a second multi-finger transistor on a dielectric layer, wherein the second multi-finger transistor includes the second semiconductor layer, an input electrode, a control electrode, and an output electrode, and wherein the dielectric layer includes the first sub-dielectric layer and the second sub-dielectric layer.
In Article 6, In the above passive layer formation step, A method for manufacturing a monolithic three-dimensional integrated amplifier in which each of the capacitor, the inductor, and the resistor does not overlap with the first multi-finger transistor.
In Article 6, In the above dielectric layer bonding step, A method for manufacturing a monolithic three-dimensional integrated amplifier in which each of the capacitor, the inductor, and the resistor does not overlap with the second multi-finger transistor.
In Article 6, A method for manufacturing a monolithic three-dimensional integrated amplifier, wherein the first multi-finger transistor comprises a plurality of first fingers, the second multi-finger transistor comprises a plurality of second fingers, and the number of the plurality of first fingers is greater than the number of the plurality of second fingers.
In Article 6, A method for manufacturing a monolithic three-dimensional integrated amplifier in which the first active layer and the passive layer operate as a Power Amplifier (PA), and the second active layer and the passive layer operate as a Low Noise Amplifier (LNA).

Description

Monolithic Three-Dimensional Integrated Amplifier and Manufacturing Method Thereof The present invention relates to a monolithic three-dimensional integrated amplifier and a method for manufacturing the same. Specifically, it relates to a monolithic three-dimensional integrated amplifier comprising a semiconductor including a group 3 element and a group 5 element, and a method for manufacturing the same. Various technologies are being proposed to implement 6th generation mobile communication (6G). The RF Front End is a core component of a communication system and consists of a Power Amplifier (PA) and a Low Noise Amplifier (LNA). To implement 6th generation mobile communication (6G), there is a need to develop an RF Front End capable of operating at a higher frequency band than existing ones. However, there is a problem in that it is difficult to implement an RF Front End that operates in the frequency band required for 6th generation mobile communication (6G) using conventional Si CMOS. Accordingly, there is a need for the development of technology to implement an RF Front End that can operate in a higher frequency band. FIG. 1 is an exemplary plan view of a monolithic three-dimensional integrated amplifier according to one embodiment of the present invention. FIG. 2 is an exemplary block diagram of a monolithic three-dimensional integrated amplifier according to one embodiment of the present invention. Figure 3 is an exemplary cross-section of the monolithic three-dimensional integrated amplifier of Figure 1 cut along II' and II-II'. FIG. 4a is an exemplary cross-sectional view of the first active layer and base substrate of a monolithic three-dimensional integrated amplifier according to one embodiment of the present invention. FIG. 4b is an exemplary cross-sectional view of the second active layer and the passive layer of a monolithic three-dimensional integrated amplifier according to one embodiment of the present invention. FIG. 5 is an exemplary flowchart of a method for manufacturing a monolithic three-dimensional integrated amplifier according to one embodiment of the present invention. FIGS. 6a to 6f are each illustrated illustrative drawings to explain a method for manufacturing a monolithic three-dimensional integrated amplifier according to an embodiment of the present invention. Preferred embodiments of the present invention will be described in more detail below with reference to the attached drawings. In the drawings, the proportions and dimensions of the components may be exaggerated for the effective explanation of the technical content. Terms such as "include" are intended to indicate the existence of the features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, and should be understood as not precluding the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof. In addition, when a component is described as "up," it refers to the area above or below the component, and does not necessarily mean that it is located on the upper side relative to the direction of gravity. In addition, where it is stated that a component is "connected" or "combined" to another component, this may include not only cases where the component is directly connected or combined to the other component, but also cases where the component is indirectly connected or combined through another component. In addition, terms such as "first," "second," etc., may be used to describe a component; however, these terms are intended merely to distinguish the component from other components and are not intended to limit the essence, order, or sequence of the component. Preferred embodiments of the present invention will be described in more detail below with reference to the attached drawings. In the drawings, the proportions and dimensions of the components may be exaggerated for the effective explanation of the technical content. FIG. 1 is an exemplary plan view of a monolithic three-dimensional integrated amplifier (MRF) according to one embodiment of the present invention. FIG. 2 is an exemplary block diagram of a monolithic three-dimensional integrated amplifier (MRF) according to one embodiment of the present invention. FIG. 3 is an exemplary cross-section of the monolithic three-dimensional integrated amplifier (MRF) of FIG. 1 cut along I-I' and II-II'. Referring to FIG. 1, a monolithic three-dimensional integrated amplifier (MRF) can be divided into an active region (AA) and a peripheral region. The peripheral region may be an area surrounding the active region (AA). The peripheral region may be an area adjacent to the active region (AA). However, the present invention is not limited to FIG. 1, and in one embodiment of the present invention, at least some of the peripheral regions may be omitted. Also, although only one active region (AA) is shown in FIG. 1, multiple active regions (AA) may be provided. Refe