KR-102964719-B1 - Method for manufacturing a piezoelectric transducer

KR102964719B1KR 102964719 B1KR102964719 B1KR 102964719B1KR-102964719-B1

Abstract

The present invention relates to a method for manufacturing a piezoelectric transducer, comprising: a step of forming a first mark on a piezoelectric wafer that is parallel or perpendicular to a preset direction of the piezoelectric transducer; a step of forming a second mark on a carrier wafer that has the same shape as the first mark and is parallel or perpendicular to the cutting direction of the carrier wafer; and a step of aligning the first mark and the second mark, and then bonding the piezoelectric wafer and the carrier wafer to form a process wafer having a first surface of the piezoelectric wafer that forms the piezoelectric transducer. The present application achieves the objective of increasing the utilization rate of the usable wafer area of the carrier wafer by making the preset direction of the piezoelectric transducer and the cutting direction of the carrier wafer parallel or perpendicular through the first mark on the piezoelectric wafer and the second mark on the carrier wafer.

Inventors

공, 송빈
양, 얀송

Assignees

스펙트론 (선전) 테크놀로지스 씨오., 엘티디

Dates

Publication Date: 20260513
Application Date: 20210531
Priority Date: 20210408

Claims (10)

A step of forming a first mark on a piezoelectric wafer that is parallel or perpendicular to a preset direction of a piezoelectric transducer; A step of forming a second mark on a carrier wafer having the same shape as the first mark and being parallel or perpendicular to the cutting direction of the carrier wafer; and The method comprises the step of aligning the first mark and the second mark, and then bonding the piezoelectric wafer and the carrier wafer to form a process wafer— wherein the first surface of the process wafer having the piezoelectric wafer is used to form the piezoelectric transducer—and A method for manufacturing a piezoelectric transducer characterized by having a first preset angle between the above preset direction and the crystal axis direction of the piezoelectric wafer, and a second preset angle between the above cutting direction and the crystal axis direction of the carrier wafer.
In paragraph 1, The first mark includes a first main positioning edge of the piezoelectric wafer, and the second mark includes a second main positioning edge of the carrier wafer. The step of forming a first mark on the piezoelectric wafer that is parallel or perpendicular to a preset direction of the piezoelectric transducer is: The method includes the step of polishing or cutting the piezoelectric wafer along a first direction parallel or perpendicular to the preset direction to form a first main position determining edge. The step of forming a second mark on the carrier wafer that is parallel or perpendicular to the cutting direction of the carrier wafer is: A method for manufacturing a piezoelectric transducer characterized by including the step of grinding or cutting the carrier wafer along a second direction parallel or perpendicular to the cutting direction to form a second main positioning edge.
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In paragraph 1, A method for manufacturing a piezoelectric transducer, characterized in that the first preset angle is an angle that rotates counterclockwise along the preset direction to the crystal axis direction of the piezoelectric wafer, and the second preset angle is an angle that rotates counterclockwise along the cutting direction to the crystal axis direction of the carrier wafer.
In paragraph 1, A method for manufacturing a piezoelectric transducer, characterized in that the first preset angle is an angle that rotates clockwise along the preset direction to the crystal axis direction of the piezoelectric wafer, and the second preset angle is an angle that rotates clockwise along the cutting direction to the crystal axis direction of the carrier wafer.
In paragraph 1, A method for manufacturing a piezoelectric transducer characterized in that at least one of the first preset angle and the second preset angle includes 0 degrees and 90 degrees.
In paragraph 2, A method for manufacturing a piezoelectric transducer, characterized in that the piezoelectric wafer further includes a first sub-position determining edge perpendicular to the first main position determining edge, and the carrier wafer further includes a second sub-position determining edge perpendicular to the second main position determining edge.
In paragraph 1, The first mark includes a first mark pattern installed on the piezoelectric wafer, and the second mark includes a second mark pattern installed on the carrier wafer. The step of forming a first mark on the piezoelectric wafer that is parallel or perpendicular to a preset direction of the piezoelectric transducer is: The method includes the step of forming a first mark pattern on the piezoelectric wafer through photolithography and etching processes—wherein the direction of the first mark pattern is parallel or perpendicular to the preset direction—and The step of forming a second mark on the carrier wafer that is parallel or perpendicular to the cutting direction of the carrier wafer is: A method for manufacturing a piezoelectric transducer characterized by including the step of forming a second mark pattern on the carrier wafer through a photolithography and etching process, wherein the direction of the second mark pattern is parallel or perpendicular to the cutting direction.
In paragraph 8, The step of forming a first mark pattern on the piezoelectric wafer through the above photolithography and etching process is, A step of forming a first marking film layer on the piezoelectric wafer; and The method includes the step of obtaining a first mark pattern after performing photolithography and etching processes on the first marking film layer. The step of forming a second mark pattern on the carrier wafer through the above photolithography and etching process is, A step of forming a second marking film layer on the carrier wafer; and The method includes the step of obtaining a second mark pattern after performing photolithography and etching processes on the second marking film layer. A method for manufacturing a piezoelectric transducer characterized in that the first marking film layer and the second marking film layer comprise at least a silica film layer.
In Paragraph 9, The first mark pattern is composed of the first marking film layer, and the second mark pattern is a concave groove formed in the second marking film layer. A method for manufacturing a piezoelectric transducer characterized in that the first mark pattern is a concave groove formed in the first marking film layer, and the second mark pattern is composed of the second marking film layer.

Description

Method for manufacturing a piezoelectric transducer This application relates to the field of semiconductor technology, and in particular to a method for manufacturing a piezoelectric transducer. The crystal direction of the piezoelectric thin film used to manufacture the piezoelectric transducer in the vertical direction of the carrier wafer and the crystal direction in the parallel plane are determined by the deposition process, and under conditions where the deposition process is not significantly changed, the crystal direction of the piezoelectric thin film in the vertical direction of the carrier wafer and the plane direction parallel to the carrier wafer cannot be arbitrarily controlled. However, after bonding a piezoelectric wafer having a different crystal orientation in the vertical direction of the carrier wafer to the carrier wafer, the thickness of the piezoelectric wafer is reduced to the thickness required for manufacturing the piezoelectric transducer to obtain a piezoelectric thin film used for manufacturing the piezoelectric transducer, that is, since a piezoelectric thin film having a different crystal orientation is obtained, the piezoelectric transducer has a certain flexibility in terms of orientation. However, in order to manufacture the piezoelectric transducer with the best performance, the piezoelectric transducer must be placed in different directions on the piezoelectric wafer as needed, and if said direction is not parallel or perpendicular to the scribing and cutting direction of the carrier wafer, the utilization rate of the usable wafer area of the piezoelectric wafer is reduced. Accordingly, the purpose is to provide a new method for manufacturing a piezoelectric transducer in order to solve the problem of reduced utilization of the usable wafer area among piezoelectric wafers existing in the prior art. To achieve the above objective, the present invention provides a method for manufacturing a piezoelectric transducer. The method comprises: A step of forming a first mark on a piezoelectric wafer that is parallel or perpendicular to a preset direction of a piezoelectric transducer; A step of forming a second mark on a carrier wafer having the same shape as a first mark and being parallel or perpendicular to the cutting direction of the carrier wafer; and After aligning the first mark and the second mark, the step of bonding the piezoelectric wafer and the carrier wafer to form a process wafer—the first surface of the process wafer having the piezoelectric wafer is used to form a piezoelectric transducer—is included. In one embodiment thereof, the first mark includes a first main positioning edge of a piezoelectric wafer, and the second mark includes a second main positioning edge of a carrier wafer, and The step of forming a first mark on a piezoelectric wafer that is parallel or perpendicular to a preset direction of a piezoelectric transducer is: The method includes the step of polishing or cutting a piezoelectric wafer along a first direction parallel or perpendicular to a preset direction to form a first main positioning edge. The step of forming a second mark on the carrier wafer that is parallel or perpendicular to the cutting direction of the carrier wafer is, It includes the step of forming a second main positioning edge by grinding or cutting the carrier wafer along a second direction parallel or perpendicular to the cutting direction. In one embodiment thereof, a first preset angle exists between a preset direction and the crystal axis direction of the piezoelectric wafer, and a second preset angle exists between the cutting direction and the crystal axis direction of the carrier wafer. In one embodiment thereof, the first preset angle is an angle that rotates counterclockwise along a preset direction to the direction of the crystal axis of the piezoelectric wafer, and the second preset angle is an angle that rotates counterclockwise along a cutting direction to the direction of the crystal axis of the carrier wafer. In one embodiment thereof, the first preset angle is an angle that rotates clockwise along a preset direction to the direction of the crystal axis of the piezoelectric wafer, and the second preset angle is an angle that rotates clockwise along a cutting direction to the direction of the crystal axis of the carrier wafer. In one embodiment thereof, the first preset angle includes 0 degrees and 90 degrees, and/or the second preset angle includes 0 degrees and 90 degrees. In one embodiment thereof, the piezoelectric wafer further includes a first sub-position determining edge perpendicular to the first main position determining edge, and the carrier wafer further includes a second sub-position determining edge perpendicular to the second main position determining edge. In one embodiment thereof, the first mark includes a first mark pattern installed on a piezoelectric wafer, and the second mark includes a second mark pattern installed on a carrier wafer, and