KR-102964749-B1 - Apparatus and method for ion analysis

KR102964749B1KR 102964749 B1KR102964749 B1KR 102964749B1KR-102964749-B1

Abstract

An ion analysis device and an ion analysis method are provided. The ion analysis device comprises a first chamber that generates a first test solution using a scan solution for ions present on a first wafer, a second chamber that generates a second test solution using a scan solution for ions present on a second wafer, and an analysis device that receives the first test solution and outputs first data regarding ions present on the first wafer, and receives the second test solution and outputs second data regarding ions present on the second wafer, wherein the concentration of ions present on the first wafer is lower than the concentration of ions present on the second wafer, and the first chamber and the second chamber generate the first test solution and the second test solution using a scan solution in different ways, and the analysis device independently analyzes the first test solution and the second test solution and outputs the first data and the second data.

Inventors

이윤석
최수원
최아미
김국주
서민수

Assignees

삼성전자주식회사

Dates

Publication Date: 20260513
Application Date: 20220104

Claims (10)

A classification device that classifies a wafer into a first wafer if the concentration of ions on the wafer is lower than the standard based on a predetermined standard based on the type of process performed on the wafer or a standard concentration of ions present on the wafer, and into a second wafer if the concentration on the wafer is higher than the standard; A first chamber that generates a first inspection solution using a scan solution for ions present on the first wafer; A second chamber that generates a second inspection solution using the scan solution for ions present on the second wafer; and The analysis device includes receiving the first inspection solution and outputting first data regarding ions present on the first wafer, and receiving the second inspection solution and outputting second data regarding ions present on the second wafer. The first chamber and the second chamber generate the first inspection solution and the second inspection solution using the scan solution in different ways, and The above analysis device is an ion analysis device that independently analyzes the first test solution and the second test solution to output the first data and the second data.
In paragraph 1, The above second chamber includes a jig, and The above jig includes the above scan solution, and The above second inspection solution is an ion analysis device generated by contacting the above second wafer with the above scan solution contained in the jig for a certain period of time and then recovering the above scan solution.
In paragraph 1, The above classification device is an ion analysis device that transfers the first wafer to the first chamber and transfers the second wafer to the second chamber.
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In paragraph 1, The above analysis device is an ion analysis device that analyzes the ions contained in the first test solution and the second test solution using an ion chromatography method.
In paragraph 1, The above scan solution is an ion analysis device containing DIW (Deionized Water).
In paragraph 1, The first chamber above includes a nozzle comprising a nozzle tube and a gas passage surrounding the nozzle tube, and The above-mentioned first inspection solution is an ion analysis device generated by discharging the scan solution through the nozzle tube, contacting the first wafer for a certain period of time, and then recovering the scan solution.
In Paragraph 7, The above gas passage is an ion analysis device that controls the amount of gas discharged through the gas passage depending on whether the first wafer is hydrophilic.
The sorting device classifies the wafer into a first wafer if the concentration of ions on the wafer is lower than the standard based on a preset standard based on the type of process performed on the wafer or a standard concentration of ions present on the wafer, and into a second wafer if the concentration of ions on the wafer is higher than the standard, and transfers the first wafer to a first chamber and transfers the second wafer to a second chamber. A first inspection solution is generated using a scanning solution for ions present on the first wafer inside the first chamber, and A second inspection solution is generated using the scan solution for ions present on the second wafer inside the second chamber, and Using the first inspection solution above, first data regarding ions present on the first wafer is output, and The method includes outputting second data regarding ions present on the second wafer using the second inspection solution, wherein The above first test solution and the above second test solution are ion analysis methods generated based on different methods.
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Description

Apparatus and method for ion analysis The present invention relates to an ion analysis device and an ion analysis method. Specifically, the invention relates to an ion analysis device and an ion analysis method capable of analyzing wafer samples of low and high concentrations using a dual chamber included in an automated analysis device. Semiconductor manufacturing processes are ultra-fine and vulnerable to various contaminants generated during each stage, which can have a significant impact on product yield and quality. Accordingly, when defects caused by contamination occur, it may be necessary to analyze the specific type of contamination and manage the process by eliminating the causes that induce it. Specifically, contaminants may originate from various chemicals used during the wafer process, and process-induced reaction byproducts may be present on the surface inside the FOUP or on the wafer, causing various process defects. In particular, among various by-products, residual ionic substances such as fluorine, chlorine, and bromine can be detected through equipment such as an Outgassing Analyzer (OGA) when they exist in the form of fumes, and can be analyzed through methods such as wafer ion chromatography (IC) when they exist on the wafer surface. Meanwhile, in the case of the existing HPIC (High Performance Ion Chromatography) analysis method, while analysis is easy when ions are present at low concentrations, there were limitations in applying the method to analyze low-concentration ions when they are present at high concentrations. Therefore, there is a growing need for research that can improve the quality of semiconductor devices through precise ion analysis methods. FIG. 1 is a drawing for explaining an ion analysis device according to some embodiments of the technical concept of the present invention. FIG. 2 is a drawing for explaining an ion analysis device according to some embodiments of the technical concept of the present invention. FIG. 3 is a cross-sectional view illustrating a nozzle in a first chamber included in an ion analysis device according to some embodiments of the technical concept of the present invention. FIG. 4 is a cross-sectional view of the nozzle contained within the first chamber of FIG. 3, cut along the line AA'. FIG. 5 is a drawing for explaining the operation within a second chamber included in an ion analysis device according to some embodiments of the technical concept of the present invention. FIG. 6 is a diagram illustrating the operation of a classification device included in an ion analysis device according to some embodiments of the technical concept of the present invention. FIG. 7 is a drawing for explaining an ion analysis device according to several other embodiments of the technical concept of the present invention. FIG. 8 is a drawing for explaining a post-processing device included in an ion analysis device according to some other embodiments of the technical concept of the present invention. FIG. 9 is a flowchart illustrating the operation of an ion analysis device according to some embodiments of the technical concept of the present invention. Hereinafter, embodiments according to the technical concept of the present invention will be described with reference to the attached drawings. FIG. 1 is a drawing for explaining an ion analysis device according to some embodiments of the technical concept of the present invention. Referring to FIG. 1, the wafer movement control device (101) can control the ion analysis device (100). For example, although not illustrated in FIG. 1, the ion analysis device (100) may include a wafer moving device. The wafer moving device may, for example, mean a conveyor belt, but the embodiments are not limited thereto, and the wafer moving device may include other devices for moving wafers. For example, the wafer moving device may include an Equipment Front End Module (EFEM). The EFEM is a device connected to semiconductor process equipment that transports wafers. The wafer movement control device (101) can control the wafer movement device included in the ion analysis device (100). That is, the wafer movement device (100) can control the wafer movement device so that the wafer moves between various components included in the ion analysis device (100). As described above, the wafer can be moved automatically rather than manually through the control of the wafer movement control device (101) within the ion analysis device (100), thereby reducing the wafer movement time. In addition, exposure to contaminants that may occur when moving the wafer manually can be prevented. FIG. 2 is a drawing for explaining an ion analysis device according to some embodiments of the technical concept of the present invention. Referring to FIG. 2, the ion analysis device (100) may include a first chamber (110), a second chamber (120), a classification device (130), a cleaning device (140), and an analysis device (150). The first chamber (110) may re