KR-102965331-B1 - SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Abstract

According to embodiments, a semiconductor device is provided comprising: a substrate; a first layer located on the substrate and forming an oxide film; a second layer deposited on the first layer to form a compound semiconductor, wherein the compound semiconductor is formed by doping a second compound with respect to the first compound; and a pattern formed on the second layer to form a gate.

Inventors

• 김민주
• 박인수
• 황완식
• 서다희

Assignees

• 단국대학교 산학협력단
• 한국항공대학교산학협력단

Dates

Publication Date

20260513

Application Date

20230908

Claims (16)

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9. A step of forming a first layer including an oxide film on a substrate; A step of forming a first compound on the first layer; A step of forming a second layer, which is a compound semiconductor, by depositing a second compound on the first compound through an iCVD (initiated Chemical Vapor Deposition) process and driving in or annealing; and A step of forming a gate pattern on the second layer; including, Method for manufacturing a semiconductor device.
10. In Article 9, The step of forming the second layer above is, A step of depositing the second compound on the first compound through the iCVD process; A step comprising: driving the deposited second compound into the first compound so that at least a portion of the second compound penetrates into the first compound; Method for manufacturing a semiconductor device.
11. In Article 9, The step of forming the second layer above is, A step of depositing the second compound on the first compound through the iCVD process; and A step of performing annealing on the second compound deposited above; comprising Method for manufacturing a semiconductor device.
12. In Article 9, The second compound mentioned above is, Containing tetraallyl tin, Method for manufacturing a semiconductor device.
13. In Article 12, The second compound mentioned above is, Further comprising TBPO having a ratio of 2:3 with the above tetra-alyltin, Method for manufacturing a semiconductor device.
14. In Article 9, The step of forming the above gate pattern is, A step of patterning a third compound on the second layer; and A step of annealing the semiconductor device patterned with the above-mentioned third compound; comprising Method for manufacturing a semiconductor device.
15. In Article 14, The above third compound is, Containing Ti/TiN, Method for manufacturing a semiconductor device.
16. A semiconductor device manufactured by a method for manufacturing a semiconductor device according to any one of claims 9 to 15.

Description

Semiconductor Device and Method for Manufacturing Semiconductor Device The embodiments relate to a semiconductor device and a method for manufacturing a semiconductor device. For example, the embodiments apply to a semiconductor device and a method for manufacturing a semiconductor device using an initiated chemical vapor deposition (iCVD) process. A semiconductor is a material that conducts electric current like a conductor only under specific conditions. With recent technological advancements leading to the miniaturization, high integration, and increased functionality of semiconductor devices, interest in semiconductors is growing across the entire electronics industry. Meanwhile, as environmental issues emerge in conjunction with science and technology, power semiconductors for efficiently converting electrical energy are becoming a hot topic. Power semiconductors are semiconductor devices that handle high voltage or high current, and they are semiconductors that convert or control power. Power semiconductors are required to have excellent voltage withstand and/or heat resistance conditions in order to perform the aforementioned functions. Accordingly, power semiconductors use compounds such as SiC (Silicon Carbide), GaN (Gallium Nitride), and GaAs (Gallium Arsenide) as semiconductor compounds. Meanwhile, power semiconductors are generally manufactured using the semiconductor compounds described above. However, conventional methods present a problem in that it is difficult to control the concentration of the dopant injected into the semiconductor. In the following, technical features of various embodiments are described together with the drawings below to further aid in the explanation of the embodiments. FIG. 1 is a flowchart illustrating a method for manufacturing a semiconductor device according to embodiments. FIG. 2 is a drawing illustrating s101 to s102 described in FIG. 1. Figure 3 is a diagram illustrating s103 described in Figure 1. FIG. 4 is a diagram illustrating the process of generating a second compound according to the embodiments. Figure 5 is a diagram illustrating s103 described in Figure 1. Figure 6 is a diagram illustrating s104 described in Figure 1. Figure 7 is a graph showing the concentration of a dopant doped in a semiconductor device according to the embodiments. Hereinafter, specific embodiments of the present invention will be described with reference to the drawings. The following detailed description is provided to facilitate a comprehensive understanding of the methods, apparatuses, and/or systems described herein. However, this is merely illustrative and the present invention is not limited thereto. In describing the embodiments of the present invention, detailed descriptions of known technologies related to the present invention are omitted if it is determined that such detailed descriptions may unnecessarily obscure the essence of the present invention. Furthermore, the terms described below are defined in consideration of their functions within the present invention, and these may vary depending on the intentions or practices of the user or operator. Therefore, such definitions should be based on the content throughout this specification. Terms used in the detailed description are intended merely to describe the embodiments of the present invention and should not be limiting in any way. Unless explicitly stated otherwise, expressions in the singular form include the meaning of the plural form. In this description, expressions such as "include" or "comprise" are intended to refer to certain characteristics, numbers, steps, actions, elements, parts thereof, or combinations thereof, and should not be interpreted to exclude the existence or possibility of one or more other characteristics, numbers, steps, actions, elements, parts thereof, or combinations thereof other than those described. Additionally, terms such as "first," "second," etc., may be used to describe various components, but said components should not be limited by said terms. These terms may be used for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be named the second component, and similarly, the second component may be named the first component. In addition, the terms "part," "unit," or "module" in this specification may refer to a functional and structural combination of hardware for carrying out the technical concept of the present invention and software for driving said hardware. For example, the "part," "unit," or "module" may refer to a logical unit of a specific code and a hardware resource for executing said code, and does not necessarily refer to physically connected code or a single type of hardware. Furthermore, the terms "part," "unit," or "module" may be used interchangeably as appropriate. Semiconductor devices and a method for manufacturing such semiconductor devices are described throug