KR-20260062140-A - VAPORIZATION SYSTEM FOR POWDER PRECURSOR

Abstract

The present invention relates to a powder precursor vaporization system that is improved to maintain a uniform vapor concentration by enabling the use of a powder source precursor, thereby providing a large surface area, which allows for a fast vaporization rate and even vaporization. The present invention provides a powder precursor vaporization system comprising: an insert tray having side walls formed on all four sides of a bottom surface, a pocket formed by a plurality of partition members at regular intervals within the side walls above the bottom surface to accommodate a plurality of powder source precursors, and a flow passage and flow path formed above the pocket for the flow of a carrier source gas; a container body accommodating the insert tray; and a carrier gas inlet member installed inside the powder source precursor to allow the carrier source gas to flow in.

Inventors

• 김충환

Assignees

• 주식회사 엠더블유코퍼레이션

Dates

Publication Date

20260507

Application Date

20241025

Claims (7)

1. An insert tray having side walls formed on all four sides of a bottom surface, pockets formed by multiple partition members at regular intervals within the side walls above the bottom surface to accommodate multiple powder source precursors, and a flow passage and a flow path formed above the pockets for carrier source gas to flow through; A container body that accommodates the above-mentioned insert tray; A powder precursor vaporization system characterized by including a carrier gas inlet member installed inside the powder source precursor to allow the carrier source gas to flow in.
2. In paragraph 1, The above carrier gas inlet member is, At least the upper part is open to allow the carrier source gas to flow in, and A powder precursor vaporization system characterized by having a plurality of micro-emission holes formed in succession in a body that allows the introduced carrier source gas to be discharged.
3. In paragraph 1, A powder precursor vaporization system characterized by the above-mentioned micro-emission holes being hexagonal.
4. In paragraph 1, A powder precursor vaporization system characterized in that the above-mentioned flow path and the above-mentioned insert tray are formed in a radial manner.
5. In paragraph 1, A powder precursor vaporization system characterized by the above pockets having the same volume.
6. In paragraph 1, A powder precursor vaporization system characterized by the above-mentioned insert tray being made of ceramic material.
7. In paragraph 1, A powder precursor vaporization system characterized in that the partition member forming the pocket is formed lower than the height of the side wall to form the flow passage and the flow path.

Description

Powder Precursor Vaporization System The present invention relates to a powder precursor vaporization system, and more specifically, to a powder precursor vaporization system that is improved to maintain a uniform vapor concentration by enabling the use of a powder source precursor, thereby providing a large surface area, and thus allowing for a fast and even vaporization rate. Atomic Layer Deposition (ALD) equipment or vapor phase reactor systems can be used in various applications, including depositing and etching materials on the surface of a substrate such as a semiconductor wafer. For example, a vapor phase reactor system is used to deposit and etch layers on a substrate to form semiconductor devices, flat panel display devices, photovoltaic devices, MEMS (Micro-Electro Mechanical System), etc. In the above-described gas-phase reactor system, reaction gases of different reactants (also referred to herein as precursor gases) are delivered to one or more substrates within the reaction chamber. The reaction chamber comprises one or more substrates supported on one or more substrate holders (e.g., susceptors), and the substrates and substrate holders are maintained at a desired process temperature. The reaction gases can react with each other or with the substrate surface to form a thin film on the substrate, and the growth rate is controlled primarily by the temperature or amount of the reaction gases. In some applications, the reaction gas is stored in gaseous form in the reactant source container. In these applications, the reaction vapor is often in a gaseous state at ambient pressure and temperature, and the gas includes nitrogen, oxygen, hydrogen, and ammonia. However, in some cases, the vapor of a source chemical (precursor) that is liquid or solid at ambient pressure and temperature is used. These source chemicals may need to be heated to generate a sufficient amount of vapor for the reaction process. In the case of some solid materials (solid source precursors), the vapor pressure at room temperature is too low, so they must be heated to generate a sufficient amount of reaction vapor and maintained at a very low pressure. A typical solid source precursor delivery system includes a solid source precursor container and a heating system (e.g., a radiant heat lamp, a resistance heater, etc.). The above-mentioned solid source precursor container contains a solid precursor (e.g., in powder form). The heating system heats the container to increase the vapor pressure of the precursor gas inside the container. In other words, the heating system heats the solid precursor so that the solid precursor vaporizes (e.g., sublimes). Accordingly, the above vessel is sometimes also called a sublimer and has an inlet and an outlet for flowing an inert carrier gas (e.g., nitrogen) through the vessel to transport the vaporized precursor to the substrate reaction chamber. Generally, the path passing through the solid source precursor container is a non-linear path designed to increase the distance the carrier gas travels through the container, thereby increasing the saturation of the carrier gas containing the vaporized precursor. The carrier gas sweeps the precursor vapor along with it through the vessel outlet and finally into the substrate reaction chamber. The above container generally includes a separation valve for fluidly separating the contents of the container from the outside of the container. Figure 1 illustrates an example of a solid source precursor container according to the prior art. Referring to FIG. 1, the solid source precursor container (20) includes a container body (30) and a lid (40). And when assembled, the lid (40) is fixed to the container body (30) by screws or nuts and bolts, etc. Additionally, the lid (40) is configured to direct the flow of gas (e.g., carrier gas) through the internal flow path of the container body (30) to remove the vaporized precursor (e.g., reaction gas). And if replacement of the above solid source precursor is required, the entire source container (20) is replaced with a new one having a full load of source chemicals. Additionally, the container lid (40) includes an inlet valve (44) and an outlet valve (42). The above inlet valve (44) has an inlet that receives carrier gas through the carrier gas conduit (26). And the inlet valve (44) has an outlet that communicates fluidly with the inlet end of the internal flow path through the container body (30). That is, the outlet of the inlet valve (44) is connected to a fluid passage through a lid that communicates with the inside of the container body when the sauce container is assembled. Additionally, the outlet valve (42) has an inlet that communicates fluidly with the outlet end of the internal flow path through the container body (30) (e.g., through a fluid passage through the lid). The above outlet valve (42) has an outlet that is in fluid communication with a fluid conduit (22) extending between the source container (2