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KR-20260062141-A - COMPRESSION VARIABLE VAPORIZATION SYSTEM FOR SOLID PRECURSOR

KR20260062141AKR 20260062141 AKR20260062141 AKR 20260062141AKR-20260062141-A

Abstract

The present invention relates to a pressure-variable solid precursor vaporization system that is improved to enable rapid and efficient vaporization by optimizing the vaporization rate through varying pressure. The present invention provides a pressure-variable solid precursor vaporization system comprising: a solid precursor source container having a solid precursor inside, configured to vaporize the solid precursor, and configured to supply the vaporized reactant to a gaseous reactor through a reactant supply pipe; a pressure variable device connected to the solid precursor source container to apply pressure into the solid precursor source container to vary the vaporization rate; and a pressure controller that checks the pressure inside the solid precursor source container and controls the pressure variable device according to the checked pressure state and vaporization state to control the pressure inside the solid precursor source container.

Inventors

  • 김충환

Assignees

  • 주식회사 엠더블유코퍼레이션

Dates

Publication Date
20260507
Application Date
20241025

Claims (10)

  1. A solid precursor source container having a solid precursor inside, configured to vaporize the solid precursor, and configured to supply the vaporized reactant to a gaseous reactor through a reactant supply pipe; A pressure variable device connected to and installed in the solid precursor source container to apply pressure into the solid precursor source container and vary the vaporization rate; A pressure-variable solid precursor vaporization system characterized by including a pressure controller that checks the pressure inside the solid precursor source container and controls the pressure variable device according to the checked pressure state and vaporization state to control the pressure inside the solid precursor source container.
  2. In paragraph 1, A pressure-variable solid precursor vaporization system characterized by including an air compressor in the above-mentioned pressure variable device.
  3. In paragraph 1, A pressure-variable solid precursor vaporization system characterized by the pressure controller being installed to control the reactant control valve installed in the reactant supply pipe.
  4. In paragraph 1, A pressure-variable solid precursor vaporization system characterized by the above-mentioned pressure variable device being connected to a gas supply pipe that supplies carrier gas into the interior of the solid precursor source container.
  5. In paragraph 4, A pressure-variable solid precursor vaporization system characterized by having a gas control valve installed in the above gas supply pipe to control the supply of the carrier gas.
  6. In paragraph 1, The above-mentioned solid precursor source container is, An insert tray having side walls formed on all four sides of a bottom surface, and pockets formed by multiple partition members at regular intervals within the side walls above the bottom surface to accommodate multiple solid source precursors; A container body that accommodates the above-mentioned insert tray; comprising The upper part of the above insert tray is open, and a fluid containing a carrier gas flows through a flow passage to form a flow path, and A pressure-variable solid precursor vaporization system characterized in that the above-mentioned flow path and the above-mentioned insert tray are formed in a spiral shape.
  7. In paragraph 6, A pressure-variable solid precursor vaporization system characterized in that the above-mentioned flow path, the above-mentioned insert tray, and the above-mentioned pocket structure are formed radially.
  8. In paragraph 6, A pressure-variable solid precursor vaporization system characterized by the above pockets having the same volume.
  9. In paragraph 6, A pressure-variable solid precursor vaporization system characterized by the above-mentioned insert tray being made of ceramic material.
  10. In paragraph 6, A pressure-variable solid precursor vaporization system characterized in that the partition member forming the pocket is formed lower than the height of the side wall to form the flow passage and flow path.

Description

Pressure-Variable Solid Precursor Vaporization System The present invention relates to a pressure-variable solid precursor vaporization system, and more specifically, to an improved pressure-variable solid precursor vaporization system that can optimize the vaporization rate by varying the pressure, thereby enabling rapid and efficient vaporization. Atomic Layer Deposition (ALD) equipment or vapor phase reactor systems can be used in various applications, including depositing and etching materials on the surface of a substrate such as a semiconductor wafer. For example, a vapor phase reactor system is used to deposit and etch layers on a substrate to form semiconductor devices, flat panel display devices, photovoltaic devices, MEMS (Micro-Electro Mechanical System), etc. In the above-described gas-phase reactor system, reaction gases of different reactants (also referred to herein as precursor gases) are delivered to one or more substrates within the reaction chamber. The reaction chamber comprises one or more substrates supported on one or more substrate holders (e.g., susceptors), and the substrates and substrate holders are maintained at a desired process temperature. The reaction gases can react with each other or with the substrate surface to form a thin film on the substrate, and the growth rate is controlled primarily by the temperature or amount of the reaction gases. In some applications, the reaction gas is stored in gaseous form in the reactant source container. In these applications, the reaction vapor is often in a gaseous state at ambient pressure and temperature, and the gas includes nitrogen, oxygen, hydrogen, and ammonia. However, in some cases, the vapor of a source chemical (precursor) that is liquid or solid at ambient pressure and temperature is used. These source chemicals may need to be heated to generate a sufficient amount of vapor for the reaction process. In the case of some solid materials (solid source precursors), the vapor pressure at room temperature is too low, so they must be heated to generate a sufficient amount of reaction vapor and maintained at a very low pressure. A typical solid source precursor delivery system includes a solid source precursor container and a heating system (e.g., a radiant heat lamp, a resistance heater, etc.). The above-mentioned solid source precursor container contains a solid precursor (e.g., in powder form). The heating system heats the container to increase the vapor pressure of the precursor gas inside the container. In other words, the heating system heats the solid precursor so that the solid precursor vaporizes (e.g., sublimes). Accordingly, the above vessel is sometimes also called a sublimer and has an inlet and an outlet for flowing an inert carrier gas (e.g., nitrogen) through the vessel to transport the vaporized precursor to the substrate reaction chamber. Generally, the path passing through the solid source precursor container is a non-linear path designed to increase the distance the carrier gas travels through the container, thereby increasing the saturation of the carrier gas containing the vaporized precursor. The carrier gas sweeps the precursor vapor along with it through the vessel outlet and finally into the substrate reaction chamber. The above container generally includes a separation valve for fluidly separating the contents of the container from the outside of the container. Figure 1 shows a schematic diagram of a typical gas-phase reactor system. That is, FIG. 1 illustrates the configuration of a reactor (102) comprising a susceptor (106) supporting a substrate (116) and a gas distribution system (108) for distributing one or more reactants onto the surface of the substrate (116), a solid reactant source (110), a second reactant source (112), and a carrier/purge gas source (114). And the reactant source and carrier/purge gas source (114) are fluidly coupled to the reaction chamber (104) through fluid conduits and various valves or controllers. Additionally, the reactor system (100) includes a vacuum source (118). And the solid reactant source (110) is configured to supply the gaseous reactant generated from the solid precursor source container (20) to the gaseous reactor (102). Additionally, the solid source container (20) holds a precursor or source chemical (not shown), which is solid under standard conditions (i.e., room temperature and atmospheric pressure). Then, the solid precursor is vaporized in a source container (20) that can be maintained above the vaporization temperature of the precursor. The resulting vaporized reactant is then supplied to a reaction chamber (104). The source container (20) may be located in a reactant source cabinet (12) that can be individually vented or thermally controlled. The reactor system (100) can be used for deposition such as, for example, chemical vapor deposition (CVD), plasma-enhanced CVD (PECVD) or atomic layer deposition (ALD). Additionally, as illustrated in FIG. 1, the p