KR-20260062173-A - DEPOSITION MASK, METHOD OF MANUFACTURING THE SAME, METHOD OF MANUFACTURING DISPLAY PANEL USING THE SAME, AND ELECTRONIC DEVICE MANUFACTURED BY USING THE SAME

Abstract

A deposition mask, a method for manufacturing the same, a method for manufacturing a display panel using the same, and an electronic device manufactured using the same are provided. The deposition mask comprises a mask frame having a cell opening and a membrane disposed on the mask frame and having a plurality of pixel openings communicating with the cell opening. The membrane is made of silicon nitride and has a first surface adjacent to the mask frame and a second surface spaced apart from the mask frame. The silicon content of the membrane increases in the direction from the first surface toward the second surface, and each of the pixel openings has a width that increases in the direction from the second surface toward the first surface.

Inventors

• 최종훈
• 유경태

Assignees

• 삼성디스플레이 주식회사

Dates

Publication Date

20260507

Application Date

20241025

Claims (20)

1. A mask frame having cell openings; and A membrane comprising a plurality of pixel openings disposed on the mask frame and communicating with the cell opening, wherein The above membrane is made of silicon nitride and has a first surface adjacent to the mask frame and a second surface spaced apart from the mask frame, and A deposition mask in which the silicon content of the above membrane increases in the direction from the first surface toward the second surface.
2. In paragraph 1, A deposition mask in which the average value of the silicon content of the above membrane is higher than the silicon content of stoichiometric silicon nitride.
3. In paragraph 1, A deposition mask in which the average ratio of silicon content to nitrogen content of the above membrane is within the range of 0.8 to 1.2.
4. In paragraph 1, The minimum ratio of silicon content to nitrogen content of the above membrane is 0.8 or higher, and A deposition mask in which the maximum ratio of silicon content to nitrogen content of the above membrane is 1.2 or less.
5. In paragraph 1, Each of the pixel openings is a deposition mask having a width that increases in the direction from the second surface toward the first surface.
6. In paragraph 5, A deposition mask having an inclination angle of 30° to 85° on the inner surface of each of the pixel openings.
7. In paragraph 1, The above membrane is a deposition mask comprising a plurality of silicon nitride films stacked on the mask frame.
8. In Paragraph 7, A deposition mask in which the silicon content of the silicon nitride films increases stepwise from the first surface toward the second surface.
9. In paragraph 8, Among the silicon nitride films above, the ratio of silicon content to nitrogen content of the silicon nitride film having the first surface is 0.8 or higher, and A deposition mask in which the ratio of silicon content to nitrogen content of the silicon nitride film having the second surface among the silicon nitride films is 1.2 or less.
10. In Paragraph 7, Each of the pixel openings is a deposition mask having a width that increases stepwise in the direction from the second surface toward the first surface.
11. Step of forming an inorganic film on a mask substrate; A step of patterning the above-mentioned inorganic film to form a membrane having a plurality of pixel openings that expose the mask substrate; and The method includes the step of patterning the mask substrate to form a mask frame having cell openings communicating with the pixel openings, wherein The above inorganic film is made of silicon nitride and has a first surface adjacent to the mask substrate and a second surface spaced apart from the mask substrate, A method for manufacturing a deposition mask in which the silicon content of the above-mentioned inorganic film increases in the direction from the first surface toward the second surface.
12. In Paragraph 11, A method for manufacturing a deposition mask in which the average value of the silicon content of the above-mentioned inorganic film is higher than the silicon content of the stoichiometric silicon nitride.
13. In Paragraph 11, A method for manufacturing a deposition mask in which the average ratio of silicon content to nitrogen content of the above-mentioned inorganic film is within the range of 0.8 to 1.2.
14. In Paragraph 11, The minimum ratio of silicon content to nitrogen content of the above inorganic film is 0.8 or higher, and A method for manufacturing a deposition mask in which the maximum ratio of silicon content to nitrogen content of the above-mentioned inorganic film is 1.2 or less.
15. In Paragraph 11, The above inorganic film is formed by a chemical vapor deposition process using a first source gas containing silicon and a second source gas containing nitrogen, and A method for manufacturing a deposition mask that increases the supply flow rate ratio of the first source gas to the second source gas while forming the above-mentioned inorganic film.
16. In Paragraph 11, The pixel openings are formed by an anisotropic etching process using a reaction gas containing fluorine, and A method for manufacturing a deposition mask in which each of the pixel openings is formed to have a width that increases in the direction from the second surface toward the first surface.
17. In Paragraph 16, A method for manufacturing a deposition mask in which the pixel openings are formed such that the inner surface of each pixel opening has an inclination angle of 30° to 85°.
18. In Paragraph 11, The above inorganic film comprises a plurality of silicon nitride films stacked on the mask substrate, and A method for manufacturing a deposition mask in which the silicon nitride films are formed to have silicon contents that increase stepwise from the first surface toward the second surface.
19. In Paragraph 18, The above silicon nitride films are formed by a chemical vapor deposition process using a first source gas containing silicon and a second source gas containing nitrogen, and A method for manufacturing a deposition mask that gradually increases the supply flow rate ratio of the first source gas to the second source gas while forming the silicon nitride films.
20. In Paragraph 18, Among the silicon nitride films above, the silicon nitride film having the first surface is formed such that the ratio of silicon content to nitrogen content is 0.8 or higher, and A method for manufacturing a deposition mask in which, among the silicon nitride films above, the silicon nitride film having the second surface is formed such that the ratio of silicon content to nitrogen content is 1.2 or less.

Description

Deposition mask, method of manufacturing the same, method of manufacturing a display panel using the same, and electronic device manufactured using the same The present invention relates to a deposition mask, a method for manufacturing the same, a method for manufacturing a display panel using the same, and an electronic device manufactured using the same. Wearable devices are being developed in the form of glasses or helmets that form a focus at a close distance in front of the user's eyes. For example, the wearable device may be a head-mounted display (HMD) device or AR glasses. Such wearable devices can provide the user with an augmented reality (AR) screen or a virtual reality (VR) screen. For wearable devices such as HMDs or AR glasses, display specifications of approximately 3,000 PPI (pixels per inch) or higher are required to allow users to use them for extended periods without dizziness. To achieve this, OLEDoS (Organic Light Emitting Diode on Silicon) technology, which is used in high-resolution, small organic light-emitting displays, is emerging. The OLEDoS technology is a technique for placing Organic Light Emitting Diodes (OLEDs) on a semiconductor substrate on which Complementary Metal Oxide Semiconductor (CMOS) devices are placed. In order to manufacture a high-resolution display panel with a resolution of approximately 3000 PPI or higher, a high-resolution deposition mask is required. For example, a deposition mask can be manufactured by forming a membrane having a plurality of pixel openings on a substrate such as a silicon wafer, and forming cell openings that expose the pixel openings by partially removing the substrate. Pixel openings of the membrane can be formed through an anisotropic etching process and may have a lower width adjacent to the cell openings and an upper width that is equal to or wider than the lower width. In this case, during the deposition process for forming the light-emitting layers of the display panel, the lower part of the pixel openings may face the deposition source, and the upper part of the pixel openings may be positioned adjacent to the backplane substrate. Consequently, there is a problem in that the loss of deposition material may increase during the deposition process, and the thickness and size of the light-emitting layers become non-uniform. FIG. 1 is an exploded perspective view to illustrate an example of a display device. FIG. 2 is a block diagram for explaining the display device illustrated in FIG. 1. FIG. 3 is an equivalent circuit diagram for explaining an example of the first subpixel shown in FIG. 2. FIG. 4 is a schematic plan view to illustrate an example of a display panel shown in FIG. 1. FIG. 5 is a schematic enlarged plan view to illustrate an example of the display area shown in FIG. 4. FIG. 6 is a schematic enlarged plan view to illustrate another example of the display area shown in FIG. 4. FIG. 7 is a schematic cross-sectional view to illustrate an example of a display panel obtained along the line I1-I1' shown in FIG. 5. FIG. 8 is a schematic cross-sectional view to illustrate another example of a display panel obtained along the line I1-I1' shown in FIG. 5. FIG. 9 is a schematic perspective view illustrating an example of a head-mounted display device. FIG. 10 is a schematic exploded perspective view for explaining the head-mounted display device illustrated in FIG. 9. FIG. 11 is a schematic perspective view illustrating another example of a head-mounted display device. FIG. 12 is a schematic diagram illustrating a deposition mask and a deposition apparatus including the same according to one embodiment of the present invention. FIG. 13 is a schematic bottom view illustrating the backplane substrate shown in FIG. 12. FIG. 14 is a schematic plan view illustrating the deposition mask shown in FIG. 12. FIG. 15 is a schematic enlarged plan view for explaining the mask cell regions illustrated in FIG. 14. FIG. 16 is a schematic cross-sectional view obtained along the line I2-I2' shown in FIG. 15. FIG. 17 is a schematic cross-sectional view illustrating a deposition mask according to another embodiment of the present invention. FIGS. 18 to 21 are schematic cross-sectional views illustrating a method for manufacturing a deposition mask according to another embodiment of the present invention. FIGS. 22 to 25 are schematic cross-sectional views illustrating a method for manufacturing a deposition mask according to another embodiment of the present invention. The advantages and features of the present invention and the methods for achieving them will become clear by referring to the embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below but may be implemented in various different forms. These embodiments are provided merely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of th