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KR-20260062363-A - IMAGE SENSOR

KR20260062363AKR 20260062363 AKR20260062363 AKR 20260062363AKR-20260062363-A

Abstract

An image sensor is provided. The image sensor comprises a first substrate including a first surface and a second surface opposite to each other, a surface insulating film on the first surface of the first substrate, a first wiring structure including a first wiring and an insulating film between the first wiring on the second surface of the first substrate, a first via trench extending at least partially into the surface insulating film and the first substrate, a second via trench connected to the first via trench and extending into the first substrate and exposing at least a portion of the first wiring, a pad pattern within the first via trench, a through-via structure connected to the pad pattern within the second via trench, and a separation structure filling a separation pattern trench extending into the first substrate around the through-via structure, wherein the separation structure comprises a first separation pattern disposed around the sidewall of the first via trench and a second separation pattern between the sidewall of the first via trench and the sidewall of the second via trench, and the second separation pattern is spaced apart from the through-via structure.

Inventors

  • 곽지현
  • 고종현
  • 김진영
  • 박균하
  • 이창규

Assignees

  • 삼성전자주식회사

Dates

Publication Date
20260507
Application Date
20241029

Claims (10)

  1. A first substrate including a first surface and a second surface opposite to each other; A surface insulating film on the first surface of the first substrate; A first wiring structure comprising a first wiring and an insulating film between the first wirings on the second surface of the first substrate; A first via trench extending at least partially into the surface insulating film and the first substrate; A second via trench connected to the first via trench and extending into the first substrate, exposing at least a portion of the first wiring; Pad pattern within the first via trench above; A through-via structure connected to the pad pattern within the second via trench; and A separation structure that fills a separation pattern trench extending into the first substrate around the above-mentioned through-via structure, wherein The above separation structure is, A first separation pattern disposed around the side wall of the first via trench and It includes a second separation pattern between the sidewall of the first via trench and the sidewall of the second via trench, The above second separation pattern is an image sensor spaced apart from the above through-via structure.
  2. In Article 1, From a planar perspective, the second separation pattern is an image sensor positioned inside the first separation pattern.
  3. In Article 1, From a planar perspective, the through-via structure is an image sensor disposed inside the second separation pattern.
  4. In Article 1, An image sensor in which the distance between the first separation pattern and the through-via structure is longer than the distance between the second separation pattern and the through-via structure.
  5. In Article 1, An image sensor in which the length of the first separation pattern extending into the first substrate is longer than the length of the second separation pattern extending into the first substrate.
  6. In Article 1, The first separation pattern extends between the pad pattern and the second surface of the first substrate, and The above second separation pattern is an image sensor extending between the surface insulating film and the second surface of the first substrate.
  7. In Article 1, An image sensor in which the width of the first via trench is larger than the width of the second via trench.
  8. In Article 1, The image sensor in which the first via trench does not overlap with the second via trench in a vertical direction.
  9. In Paragraph 8, The second separation pattern is an image sensor disposed between the first via trench and the second via trench.
  10. A first substrate comprising a first region and a second region surrounding the first region, and comprising a first surface and a second surface opposite to each other; In the first region, photoelectric conversion layers within the first substrate; A first separation structure that fills a first separation pattern trench extending into the first substrate between the above photoelectric conversion layers; A surface insulating film on the first surface of the first substrate; A first wiring structure comprising a first wiring and an insulating film between the first wirings on the second surface of the first substrate; In the second region, a first via trench extending at least partially into the surface insulating film and the first substrate; A second via trench connected to the first via trench and extending into the first substrate, exposing at least a portion of the first wiring; Pad pattern within the first via trench above; A through-via structure connected to the pad pattern within the second via trench; and A second separation structure that fills a second separation pattern trench extending into the first substrate, around the above-mentioned through-via structure, wherein The above second separation structure is, A first separation pattern disposed around the side wall of the first via trench and It includes a second separation pattern between the sidewall of the first via trench and the sidewall of the second via trench, Each of the first and second separation patterns above is an image sensor comprising a material different from the surface insulating film.

Description

Image Sensor The present invention relates to an image sensor. An image sensor is a semiconductor device that converts optical information into an electrical signal. Such image sensors may include Charge Coupled Device (CCD) image sensors and Complementary Metal-Oxide Semiconductor (CMOS) image sensors. The image sensor can be configured in the form of a package, wherein the package can be structured to protect the image sensor while allowing light to be incident on the photo-receiving surface or sensing area of the image sensor. FIG. 1 is a block diagram illustrating an image sensing device according to some embodiments. FIG. 2 is an exemplary circuit diagram for explaining a unit pixel of an image sensor according to some embodiments. FIG. 3 is a diagram illustrating a conceptual layout of an image sensor according to some embodiments. FIG. 4 is an exemplary layout diagram for illustrating an image sensor according to some embodiments. Figure 5 is a cross-sectional view taken along A-A', B-B', CC' and D-D' of Figure 4. FIGS. 6 and 7 are drawings illustrating exemplary layouts of pad areas of an image sensor according to some embodiments. FIG. 8 is a diagram illustrating a conceptual layout of an image sensor according to some embodiments. FIGS. 9 to 11 are cross-sectional views illustrating an image sensor according to some embodiments. FIGS. 12 and FIGS. 13 are drawings illustrating exemplary layouts of pad areas of an image sensor according to some embodiments. FIG. 1 is a block diagram illustrating an image sensing device according to some embodiments. Referring to FIG. 1, an image sensing device (1) according to some embodiments may include an image sensor (10) and an image signal processor (20). The image sensor (10) can generate an image signal (IS) by using light to sense an image of a sensing target. In some embodiments, the generated image signal (IS) may be, for example, a digital signal, but embodiments according to the technical concept of the present invention are not limited thereto. The image signal (IS) can be provided to and processed by an image signal processor (20). The image signal processor (20) receives the image signal (IS) output from the buffer (17) of the image sensor (10) and can process or modify the received image signal (IS) to facilitate display. In some embodiments, the image signal processor (20) may perform digital binning on an image signal (IS) output from an image sensor (10). In this case, the image signal (IS) output from the image sensor (10) may be a raw image signal from a pixel array (15) without analog binning, or it may be an image signal (IS) that has already undergone analog binning. In some embodiments, the image sensor (10) and the image signal processor (20) may be disposed separately from each other as illustrated. For example, the image sensor (10) may be mounted on a first chip and the image signal processor (20) may be mounted on a second chip and communicate with each other through a predetermined interface. However, the embodiments are not limited thereto, and the image sensor (10) and the image signal processor (20) may be implemented as a single package, such as a multi-chip package (MCP). The image sensor (10) may include a pixel array (15), a control register block (11), a timing generator (12), a row driver (14), a read-out circuit (16), a ramp signal generator (13), and a buffer (17). The control register block (11) can control the operation of the image sensor (10) in its entirety. In particular, the control register block (11) can directly transmit operation signals to the timing generator (12), the ramp signal generator (13), and the buffer (17). The timing generator (12) can generate a signal that serves as a reference for the operation timing of various components of the image sensor (10). The operation timing reference signal generated by the timing generator (12) can be transmitted to a ramp signal generator (13), a row driver (14), a read-out circuit (16), etc. The ramp signal generator (13) can generate and transmit a ramp signal used in the read-out circuit (16). For example, the read-out circuit (16) may include a correlation double sampler (CDS), a comparator, etc., and the ramp signal generator (13) can generate and transmit a ramp signal used in the correlation double sampler, the comparator, etc. The row driver (14) can selectively activate a row of the pixel array (15). The pixel array (15) can sense an external image. The pixel array (15) may include a plurality of pixels. The read-out circuit (16) can sample the pixel signal provided from the pixel array (15), compare it with the ramp signal, and then convert the analog image signal (data) into a digital image signal (data) based on the comparison result. The buffer (17) may include, for example, a latch. The buffer (17) may temporarily store an image signal (IS) to be provided externally and may transmit the image signal (IS) to an external memory or external device. FIG. 2