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KR-20260062569-A - SUBSTRATE SUPPORTING ASSEMBLY, SHOWERHEAD ASSEMBLY, AND SUBSTRATE PROCESSING APPARTUS INCLUDING THE SAME

KR20260062569AKR 20260062569 AKR20260062569 AKR 20260062569AKR-20260062569-A

Abstract

The present invention aims to provide a substrate support assembly, a showerhead assembly, and a substrate processing apparatus including the same, capable of precisely controlling plasma distribution in the edge region of a processing space. A substrate support assembly that supports a substrate in a substrate processing apparatus using plasma according to the present invention comprises: a support plate made of a ceramic material that supports the substrate; a base plate made of a metal material located below the ceramic plate; a focus ring made of a metal material located outside the ceramic plate; and an outer ring located outside the focus ring. The outer ring is composed of a quartz material mixed with carbon.

Inventors

  • 이기룡
  • 성진일
  • 김수웅
  • 김선일
  • 조성환
  • 이원준
  • 아라켈얀

Assignees

  • 세메스 주식회사

Dates

Publication Date
20260507
Application Date
20241029

Claims (20)

  1. In a substrate support assembly that supports a substrate in a plasma-based substrate processing device, A support plate that supports the above substrate; A base plate located at the lower part of the above support plate; A focus ring located on the outer side of the above support plate; It includes an outer ring located on the outer side of the focus ring, and The above outer ring is a substrate support assembly composed of carbon-mixed quartz material.
  2. In paragraph 1, A substrate support assembly in which the volume resistance of the outer ring is controlled according to the weight ratio of the carbon in the outer ring.
  3. In paragraph 1, A substrate support assembly in which the weight ratio of the carbon in the outer ring is 0.01% to 1%.
  4. In paragraph 1, A substrate support assembly in which the weight ratio of the carbon in the outer ring is 1% to 5%.
  5. In paragraph 1, A substrate processing device in which the plasma distribution of the edge region in the processing space of the substrate changes according to the electrical conductivity of the outer ring.
  6. In a showerhead assembly for dispersing a processing gas into a processing space of a substrate in a substrate processing device using plasma, A gas distribution plate coupled to the upper part of the chamber forming the above processing space; A shower head coupled to the lower part of the above gas distribution plate; and It includes an upper ring provided on the outer side of the shower head, and The upper ring above is a shower head assembly composed of carbon-mixed quartz material.
  7. In paragraph 6, A showerhead assembly in which the volume resistance of the upper ring changes according to the weight ratio of the carbon in the upper ring.
  8. In paragraph 6, A showerhead assembly in which the weight ratio of the carbon in the upper ring is 0.01% to 1%.
  9. In paragraph 6, A showerhead assembly in which the weight ratio of the carbon in the upper ring is 1% to 5%.
  10. In Paragraph 9, A showerhead assembly in which the plasma distribution in the edge region of the processing space changes according to the electrical conductivity of the upper ring.
  11. In a substrate processing apparatus using plasma, A process chamber forming a processing space for the above substrate; A substrate support assembly that supports the above substrate; and It includes a showerhead assembly that disperses the processing gas into the above-mentioned processing space, and The substrate support assembly is, A support plate that supports the above substrate; A base plate located at the lower part of the above support plate; A focus ring made of metal material located on the outer side of the support plate; and It includes an outer ring located on the outer side of the focus ring, and The above showerhead assembly is, A gas distribution plate coupled to the upper part of the process chamber above; A shower head coupled to the lower part of the above gas distribution plate; and It includes an upper ring provided on the outer side of the shower head, and A substrate processing device in which at least one of the outer ring and the upper ring is composed of a carbon-mixed quartz material.
  12. In Paragraph 11, A substrate processing device in which the volume resistance of the outer ring and the upper ring changes according to the weight ratio of the carbon in the outer ring and the upper ring.
  13. In Paragraph 11, The above outer ring is composed of quartz mixed with carbon, and The above upper ring is a substrate processing device composed of quartz.
  14. In Paragraph 13, A substrate processing device in which the weight ratio of the carbon in the outer ring is 0.01% to 1%.
  15. In Paragraph 13, A substrate processing device in which the weight ratio of the carbon in the outer ring is 1% to 5%.
  16. In Paragraph 11, The upper ring is composed of quartz mixed with carbon, and The above outer ring is a substrate processing device composed of quartz.
  17. In Paragraph 16, A substrate processing device in which the weight ratio of the carbon in the upper ring is 0.01% to 1%.
  18. In Paragraph 16, A substrate processing device in which the weight ratio of the carbon in the upper ring is 1% to 5%.
  19. In Paragraph 11, A substrate processing device in which the outer ring and the upper ring are composed of quartz mixed with carbon.
  20. In Paragraph 11, A substrate processing device in which the plasma distribution of the edge region in the processing space changes according to the electrical conductivity of the outer ring.

Description

Substrate supporting assembly, showerhead assembly, and substrate processing apparatus including the same The present invention relates to a substrate support assembly that supports a substrate in a system for processing a substrate using plasma, a showerhead assembly that supplies a processing gas to a processing space of the substrate, and a substrate processing apparatus comprising the substrate support assembly and the showerhead assembly. A semiconductor (or display) manufacturing process is a process for manufacturing semiconductor devices on a substrate (e.g., a wafer), and includes, for example, photolithography, deposition, etching, ion implantation, cleaning, etc. In order to perform each manufacturing process, semiconductor manufacturing equipment for performing each process is provided within a cleanroom of a semiconductor manufacturing plant, and process treatment is performed on a substrate fed into the semiconductor manufacturing equipment. In semiconductor manufacturing processes, plasma-based processes, such as etching and deposition, are widely used. The plasma treatment process is performed by placing a substrate on the bottom of a plasma treatment space and applying an RF (radio frequency) signal through an electrode located on the top or bottom, along with the supply of a fluid for plasma treatment. For plasma processing, a lower electrode is located at the bottom of the process chamber, and an upper electrode is located at the top of the process chamber. Plasma is generated by the electromagnetic field between the lower electrode and the upper electrode. Generally, the plasma is non-uniformly distributed along the radial direction of the processing area of the substrate, and various methods for controlling the plasma distribution have been introduced. In particular, precise control of the plasma is required because the uniformity of the substrate's process characteristics can change significantly depending on the shape of the plasma around the edge region of the processing space. FIG. 1 illustrates the schematic structure of a substrate processing device according to the present invention. Figure 2 is an enlarged view of the edge region of the processing space of the substrate. Figures 3a to 3g illustrate the simulation results of plasma distribution according to changes in the materials of the outer ring and the upper ring. Figure 4 illustrates the change in plasma uniformity according to the change in material of the outer ring and the upper ring. Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings so that those skilled in the art can easily implement the present invention. The present invention may be embodied in various different forms and is not limited to the embodiments described herein. To clearly explain the present invention, parts unrelated to the explanation have been omitted, and the same reference numerals are used for identical or similar components throughout the specification. In addition, in various embodiments, components having the same configuration are described using the same reference numerals only in the representative embodiment, and in other embodiments, only configurations different from the representative embodiment are described. Throughout the specification, when a part is described as being "connected (or combined)" with another part, this includes not only cases where they are "directly connected (or combined)" but also cases where they are "indirectly connected (or combined)" with other members in between. Furthermore, when a part is described as "comprising" a certain component, this means that, unless specifically stated otherwise, it does not exclude other components but may include additional components. Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as generally understood by those skilled in the art to which the present invention pertains. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology, and should not be interpreted in an ideal or overly formal sense unless explicitly defined in this application. FIG. 1 illustrates the schematic structure of a substrate processing device (10) according to the present invention. The substrate processing device (10) processes a substrate (W) using plasma. The substrate processing device (10) includes a chamber (100), a substrate support assembly (200), a showerhead assembly (300), a gas supply unit (400), a plasma source, a liner (500), and a baffle (600). The chamber (100) has a processing space (102) inside which a substrate processing process is performed. The chamber (100) is provided in a sealed shape. The chamber (100) may be provided with a conductive material. For example, the chamber (100) may be provided with a material including metal. The chamber (100)