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KR-20260062674-A - SUBSTRATE PROCESSING METHOD, MANUFACTURING METHOD AND SUBSTRATE PROCESSING APPARATUS

KR20260062674AKR 20260062674 AKR20260062674 AKR 20260062674AKR-20260062674-A

Abstract

The present invention provides a method for processing a substrate. The substrate processing method comprises: a liquid processing step of supplying a processing liquid to the substrate; a drying step of removing the processing liquid supplied in the liquid processing step from the substrate; and a line width correction step of correcting the line width of a pattern formed on the substrate in the liquid processing step. In the line width correction step, a processing fluid is supplied to a processing space provided with the substrate, and the pressure of the processing space is controlled to a pressure such that the processing fluid can maintain a supercritical or subcritical state to correct the line width of the pattern.

Inventors

  • 커랴킨
  • 원준호
  • 강형석
  • 허필균

Assignees

  • 세메스 주식회사

Dates

Publication Date
20260507
Application Date
20241029

Claims (20)

  1. In a method for processing a substrate, A liquid treatment step of supplying a processing liquid to the above substrate; A drying step for removing the processing liquid supplied to the above liquid processing step from the substrate; and The above liquid processing step includes a line width correction step for correcting the line width of a pattern formed on the substrate, and A substrate processing method in which, in the line width correction step, a processing fluid is supplied to a processing space provided with the substrate, and the pressure of the processing space is controlled to a pressure such that the processing fluid can maintain a supercritical or subcritical state to correct the line width of the pattern.
  2. In paragraph 1, If the above line width is to be corrected to a first size, the pressure of the processing space is controlled to a first pressure in the line width correction step, and A substrate processing method in which, when correcting the above line width to a second size larger than the first size, the pressure of the processing space in the line width correction step is controlled to a second pressure larger than the first pressure.
  3. In paragraph 1, A substrate processing method in which the pressure of the processing space in the above line width correction step is determined based on the correction requirement for the line width.
  4. In paragraph 1, The above drying step involves supplying the processing fluid in a supercritical state to the substrate to remove the processing fluid from the substrate, wherein The processing conditions of the above drying step and the above line width correction step are different from each other in the substrate processing method.
  5. In paragraph 3, In the above drying step, the processing fluid is supplied to a first processing space for processing the substrate, and the processing liquid on the substrate is removed while exhausting the first processing space. A substrate processing method that corrects the line width of the pattern by maintaining the pressure of the second processing space at a correction pressure without exhausting the second processing space, which is the processing space, in the line width correction step.
  6. In paragraph 5, The above drying step is, A drying pressurization step to increase the pressure of the first processing space; A flow step of supplying the processing fluid to the first processing space and exhausting the first processing space to cause the processing fluid to flow in the first processing space; The above line width correction step is, A pressure maintaining step of maintaining the pressure of the second processing space at a corrected pressure without exhausting the second processing space; and A substrate processing method comprising a line width correction pressure reduction step that lowers the pressure of the second processing space after the pressure maintenance step.
  7. In paragraph 6, The above drying step is, After the above fluidization step, a drying depressurization step for lowering the pressure of the first processing space is further included, The above line width correction step is, A substrate processing method further comprising a line width correction pressurization step that increases the pressure of the second processing space.
  8. In Paragraph 7, A substrate processing method in which a waiting step is performed between the above drying depressurization step and the above line width correction step.
  9. In paragraph 6, A substrate processing method in which the above-mentioned fluidization step and the above-mentioned pressure maintenance step are performed continuously.
  10. In paragraph 5, A substrate processing method in which the first processing space and the second processing space are the same space.
  11. In paragraph 5, A substrate processing method in which the first processing space and the second processing space are different spaces.
  12. In paragraph 1, The above drying step is, A substrate processing method in which, after the above liquid processing step is completed, the substrate is rotated while supported on a support unit to remove the processing liquid on the substrate.
  13. In paragraph 2, It further includes a line width measurement step performed prior to the above liquid treatment step, for measuring the line width of a pattern formed on a substrate, and A substrate processing method in which the pressure of the processing space is determined based on the measured value measured in the line width measurement step above in the line width correction step above.
  14. In paragraph 1, A substrate processing method in which, after the above-mentioned line width correction step is completed, an etching step is performed to remove a film on the substrate using the pattern formed on the substrate as a mask.
  15. In paragraph 1, A substrate treatment method in which the above-mentioned treatment solution is a developer and the above-mentioned treatment fluid includes carbon dioxide.
  16. In the manufacturing method, A method for controlling the pressure of the processing space to a high pressure state by supplying carbon dioxide to a processing space where a substrate is processed, and controlling the pressure of the processing space so that the line width of a pattern formed on the substrate can be corrected based on a pre-measured pattern line width correction requirement.
  17. In Paragraph 16, If the above line width correction requirement is small, the pressure of the above processing space is adjusted to a first pressure, and A method for adjusting the pressure of the processing space to a second pressure greater than the first pressure when the above line width correction requirement is large.
  18. In Paragraph 17, The correction of the above line width is performed after at least a portion of the processing solution has been removed from the substrate, and A method for maintaining the carbon dioxide supplied to the above processing space in a supercritical or subcritical state.
  19. In a device for processing substrates, Liquid processing chamber that supplies processing liquid to a substrate; At least one high-pressure chamber for supplying a processing fluid to the above substrate; and Includes a controller, The above controller is, Supplying the processing liquid from the above liquid processing chamber to the substrate; Remove the processing liquid supplied onto the substrate in either of the above liquid processing chamber and the above high-pressure chamber; A substrate processing device that controls the liquid processing chamber and the high-pressure chamber to correct the line width on the substrate by supplying the processing fluid from the high-pressure chamber to the substrate after the processing liquid is removed from the substrate.
  20. In Paragraph 19, The above controller is, A substrate processing device that stores a line width correction requirement for the above substrate in advance and controls the high-pressure chamber to set the pressure inside the high-pressure chamber based on the line width correction requirement.

Description

Substrate processing method, manufacturing method and substrate processing apparatus The present invention relates to a substrate processing method, a manufacturing method, and a substrate processing apparatus, and more specifically, to a substrate processing method, a manufacturing method, and a substrate processing apparatus for manufacturing a semiconductor device. To manufacture semiconductor devices, various processes are performed on a substrate, such as a wafer. For example, processes such as a cleaning process to clean the substrate, a coating process to apply a photoresist to the substrate, an exposure process to irradiate the photoresist with light, a development process to form a pattern by supplying a developer to the irradiated photoresist, an etching process to remove the film on the substrate using the formed pattern as a mask, and an ashing process to remove the pattern that served as a mask from the substrate after the etching process may be performed. These processes are implemented under various processing conditions depending on the type and function of the semiconductor device to be manufactured. Meanwhile, the type and function of semiconductor devices depend on the shape of the circuit pattern implemented on the wafer. The shape of the circuit pattern can be determined by the exposure mask used in the photolithography process. The exposure mask is a type of 'template'. The photolithography process uses an exposure mask to draw a pattern onto a photoresist film coated on a substrate using light. In the photolithography process, an exposure mask is placed under a light source, and a substrate is placed under the exposure mask. Then, the light source irradiates light onto the substrate through the exposure mask to draw the circuit pattern onto the photoresist film coated on the substrate. The linewidth of a circuit pattern formed on a substrate depends on the linewidth of the circuit pattern formed on the exposure mask. Therefore, if the linewidth of the circuit pattern formed on the substrate differs from the target linewidth, or if the target linewidth is to be changed, a new exposure mask must be fabricated accordingly. Recently, as the linewidth of circuit patterns formed on substrates has become extremely fine, high precision is required in the manufacturing of exposure masks. Consequently, fabricating a new exposure mask to change the circuit pattern linewidth is inefficient due to the significant cost and time involved. FIG. 1 is a plan view showing a substrate processing apparatus according to one embodiment of the present invention. Figure 2 is a schematic diagram showing the liquid treatment chamber of Figure 1. Figure 3 is a schematic diagram showing the high-pressure chamber of Figure 2. FIG. 4 is a flowchart showing a substrate processing method according to one embodiment of the present invention. Figure 5 is a schematic diagram illustrating the appearance of a substrate to be inspected when performing the line width measurement step of Figure 4. Figure 6 is a drawing showing the appearance of a liquid treatment chamber performing the liquid treatment step of Figure 4. Figure 7 is a graph showing the pressure change inside the high-pressure chamber when performing the drying step of Figure 4. Figures 8 to 10 are drawings showing the appearance of a high-pressure chamber performing the drying step of Figure 7. Figure 11 is a graph showing the pressure change inside the high-pressure chamber when performing the line width correction step of Figure 4. Figure 12 is a drawing showing the appearance of a high-pressure chamber performing the line width correction step of Figure 4. Figure 13 is a graph showing the change in pattern line width formed on a substrate when a line width correction step is performed. Figures 14 to 16 are graphs showing the line width of a pattern formed on a substrate being corrected. Figure 17 is a graph showing the change in pattern line width formed on a substrate according to the change in pressure of the high-pressure chamber after the development process on the substrate is completed. Figure 18 is a graph showing the change in pattern line width formed on a substrate according to the change in pressure of the high-pressure chamber after the etching process on the substrate is completed. FIG. 19 is a graph illustrating another embodiment of the pressure change inside the high-pressure chamber when performing the drying step of FIG. 4. FIGS. 20 and 21 are drawings showing the appearance of a high-pressure chamber performing the drying step of FIG. 19. FIGS. 22 to 25 are graphs illustrating examples of pressure changes within a high-pressure chamber when the drying step and line width correction step of FIG. 4 are performed in a single high-pressure chamber. Figure 26 is a drawing showing the liquid treatment chamber performing the drying step of Figure 4. The various features and benefits of the non-limiting embodiments of this specification may beco