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KR-20260062688-A - The method of manufacturing tungsten carbide coating films co-doped with carbon and nitrogen

KR20260062688AKR 20260062688 AKR20260062688 AKR 20260062688AKR-20260062688-A

Abstract

The present invention relates to a method for manufacturing a tungsten carbide (WC:C,N) coating film co-doped with carbon and nitrogen for use as high-end decorative items on household goods and industrial parts, such as necklaces, rings, automobiles, motorcycles, and secondary battery parts made of metal materials. The method for manufacturing a WC:C,N coating film according to the present invention includes a step of cleaning a substrate by heating a filament to ionize a sputtering gas by thermionic electrons, a step of depositing an intermediate layer to improve adhesion, and a heat treatment step to increase hardness after depositing the WC:C,N coating film. The WC:C,N coating film produced by the above method exhibits excellent wear resistance, bonding strength, and a black gloss, and has a uniform thickness, making it applicable as a coating material for various industrial parts.

Inventors

  • 조신호
  • 김현구

Assignees

  • 주식회사 케이디엘씨

Dates

Publication Date
20260507
Application Date
20241029

Claims (6)

  1. In a method for manufacturing a WC:C,N coating film, A step of mounting a sputtering target and a base material inside a sputtering chamber; A step of exhausting the vacuum of the sputtering chamber to 5 x 10⁻⁵ torr or less; A step of cleaning the above sputtering target using plasma; A step of cleaning the above base material by heating the filament; A step of depositing an intermediate layer to improve adhesion to the surface of the above-mentioned substrate; A step of depositing a WC:C,N coating film on the intermediate layer of the above-mentioned base material; A method for manufacturing a WC:C,N coating film characterized by including a post-heat treatment step of performing the above WC:C,N coating film in a temperature atmosphere of 300 to 1000℃.
  2. In Paragraph 1, A method for manufacturing a WC:C,N coating film, characterized in that the sputtering target cleaning step comprises a step of cleaning by injecting 100 sccm of Ar gas in a temperature range of 30 to 500℃ and then applying 2 to 4 kW of DC power.
  3. In Paragraph 1, A method for manufacturing a WC:C,N coating film, characterized in that the above substrate cleaning step includes a cleaning step using Ar + gas ionized by thermionic electrons emitted by injecting 100 sccm of Ar gas in a temperature range of 30 to 500℃ and applying a bias voltage of 500 to 700V, and applying a DC voltage of 50 to 100V to a filament.
  4. In Paragraph 1, A method for manufacturing a WC:C,N coating film, characterized in that the above intermediate layer coating step involves injecting 100 sccm of Ar gas in a temperature range of 30 to 500℃, applying a bias voltage of 50 to 100V, injecting N2 gas having a partial pressure ratio of N2 gas to Ar gas of 10 to 60%, and then applying a DC power of 2 to 4kW to a Cr sputtering target to form a CrN intermediate layer having a thickness of 10 to 500 nm.
  5. In paragraph 1, A method for manufacturing a WC:C,N coating film, characterized in that the above WC:C,N coating step involves injecting 100 sccm of Ar gas in a temperature range of 30 to 500℃, applying a bias voltage of 50 to 100V , injecting N₂ and C₂H₂ gases in which the partial pressure ratio of the total sum of N₂ and C₂H₂ gases to Ar gas is 20 to 80% , and then applying a DC power of 2 to 4kW to a WC sputtering target to form a WC:C,N coating film having a thickness of 1 to 5 μm.
  6. In paragraph 1, A method for manufacturing a WC:C,N coating film, characterized in that the above post-heat treatment step is performed at 300 to 1000°C using an electric furnace or a solid-state laser pumped by a diode having a wavelength of 532 nm.

Description

Method of manufacturing tungsten carbide coating films co-doped with carbon and nitrogen The present invention relates to a method for manufacturing a tungsten carbide (WC:C,N) coating film that is simultaneously doped with carbon and nitrogen for use as a high-end decorative item for necklaces, cutlery, mobile phones, automobiles, motorcycles, and parts for secondary batteries. More specifically, the invention relates to a method for manufacturing a WC:C,N coating film that has a black gloss and excellent adhesion and wear resistance on a base material such as the above-mentioned household goods and industrial parts. Recently, significant efforts have been made to develop coating technologies for high-quality decorative items by coating the surfaces of various industrial and household goods made of metal or non-metal materials with thin films that exhibit a black gloss, excellent wear resistance, and superior adhesion. Until now, for packaging cases for various components, cutting tools, and components that transport semiconductor substrates, diamond-like carbon (DLC) thin films have been coated on the surfaces of these components using plasma vapor deposition and ion source deposition to form coating films with high hardness and a low coefficient of friction. Patent Document 1 describes a technology that improves the adhesion of the DLC coating layer by minimizing the phenomenon of excessive charge accumulation occurring at sharp shapes of the coating material through the application of a bidirectional bias in the low-frequency range to the surface of the substrate; however, depending on the process conditions, it exhibits resistance values close to those of metal or insulators and shows problems of low gloss. In the case of Patent Document 2, there is an advantage in improving the bonding strength of a screw by vacuum depositing a tungsten cobalt carbide (WCC) coating film on the surface of a dental implant screw using an arc generating device, but a problem arises in that large particles of irregular size are generated during the arc coating process, causing a decrease in the morphology and surface roughness of the coating film. As a means to solve the above-mentioned problems, the present invention improves adhesion by coating a CrN intermediate layer on the surface of a substrate, such as household goods and industrial parts, using an unbalanced magnetron sputtering deposition method, and by depositing a tungsten carbide (WC:C,N) coating film co-doped with carbon and nitrogen on top of the CrN intermediate layer, a coating film having a black gloss and excellent adhesion and wear resistance can be formed. Depending on the partial pressure ratio of the carbon and nitrogen co-doped tungsten carbide (WC:C,N) coating film, a coating film with low wear rate, high adhesion, and various colors of light can be manufactured. FIG. 1 is a step diagram showing the manufacturing process of a WC:C,N coating film according to an embodiment of the present invention. FIG. 2 is a schematic diagram of a sputtering apparatus used to manufacture a WC:C,N coating film according to an embodiment of the present invention. FIG. 3 is a surface view of the WC:C,N coating film produced in the present invention, taken with a calo tester and an optical microscope. The present invention relates to a method for manufacturing a tungsten carbide (WC:C,N) coating film co-doped with carbon and nitrogen for use on metal substrates, such as household goods or industrial parts, as high-quality decorative items. The method for manufacturing the coating film is performed using an unbalanced magnetron sputtering deposition method. As illustrated in FIG. 1, the method for manufacturing the WC:C,N coating film comprises a target and substrate mounting step, an exhaust step, a target cleaning step, a substrate cleaning step, an intermediate layer coating step, a WC:C,N coating step, and a post-heat treatment step. By implementing this, a WC:C,N coating film having a black gloss, excellent adhesion, and wear resistance can be manufactured. Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings. As shown in FIG. 2, the above step of mounting the sputtering target and base material involves mounting a chromium (Cr) target (2) to be coated as an intermediate layer and a tungsten carbide (WC) target (3) to be deposited as a final layer onto a target holder formed inside the sputtering chamber (1) by turning screws. At this time, it is important to insulate the sputtering target and the chamber (1) so that they do not conduct electricity. After fixing the base material (5) to be coated onto a substrate holder (4) formed with six or more vertical axes that rotates simultaneously and rotates, and has wheels on the bottom as a means of transport for convenient transport, the substrate holder (4) with wheels is pushed into the chamber (1) along the rail and fixed. The above exhaust s